BC638TA ON Semiconductor
| Anzahl | Preis |
|---|---|
| 5941+ | 0.091 EUR |
| 10000+ | 0.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BC638TA ON Semiconductor
Description: ONSEMI - BC638TA - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 1 A, 1 W, TO-92, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, rohsCompliant: YES, DC-Stromverstärkung (hFE), min.: 40hFE, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, euEccn: NLR, Verlustleistung: 1W, Bauform - Transistor: TO-92, Dauerkollektorstrom: 1A, Anzahl der Pins: 3Pin(s), Produktpalette: BC638, Kollektor-Emitter-Spannung, max.: 60V, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: PNP, Übergangsfrequenz: 100MHz, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote BC638TA nach Preis ab 0.063 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BC638TA | ON Semiconductor |
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BC638TA | ON Semiconductor |
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BC638TA | ON Semiconductor |
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BC638TA | onsemi |
Description: TRANS PNP 60V 1A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BC638TA | Fairchild Semiconductor |
Description: TRANS PNP 60V 1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 8816 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
auf Bestellung 1925 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
BC638TA | onsemi |
Bipolar Transistors - BJT TO-92 PNP GP AMP |
auf Bestellung 9478 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BC638TA | onsemi |
Description: TRANS PNP 60V 1A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W |
auf Bestellung 6746 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
BC638TA | ONSEMI |
Description: ONSEMI - BC638TA - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 1 A, 1 W, TO-92, DurchsteckmontagetariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 40hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TO-92 Dauerkollektorstrom: 1A Anzahl der Pins: 3Pin(s) Produktpalette: BC638 Kollektor-Emitter-Spannung, max.: 60V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3139 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BC638TA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5941+ | 0.091 EUR |
| BC638TA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.093 EUR |
| 4000+ | 0.063 EUR |
| BC638TA |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold
Trans GP BJT PNP 60V 1A 1000mW 3-Pin TO-92 Fan-Fold
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.093 EUR |
| 4000+ | 0.065 EUR |
| BC638TA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.12 EUR |
| 4000+ | 0.11 EUR |
| BC638TA |
![]() |
Hersteller: Fairchild Semiconductor
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 8816 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3947+ | 0.12 EUR |
| BC638TA |
![]() |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
auf Bestellung 1925 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 209+ | 0.34 EUR |
| 293+ | 0.24 EUR |
| 505+ | 0.14 EUR |
| 727+ | 0.098 EUR |
| 1000+ | 0.086 EUR |
| BC638TA |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT TO-92 PNP GP AMP
Bipolar Transistors - BJT TO-92 PNP GP AMP
auf Bestellung 9478 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| 4000+ | 0.099 EUR |
| BC638TA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Description: TRANS PNP 60V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
auf Bestellung 6746 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 53+ | 0.34 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| BC638TA |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - BC638TA - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 1 A, 1 W, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: TO-92
Dauerkollektorstrom: 1A
Anzahl der Pins: 3Pin(s)
Produktpalette: BC638
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: ONSEMI - BC638TA - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 1 A, 1 W, TO-92, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 40hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1W
Bauform - Transistor: TO-92
Dauerkollektorstrom: 1A
Anzahl der Pins: 3Pin(s)
Produktpalette: BC638
Kollektor-Emitter-Spannung, max.: 60V
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: PNP
Übergangsfrequenz: 100MHz
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3139 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH






