auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.43 EUR |
| 10+ | 8.48 EUR |
| 25+ | 8.04 EUR |
| 100+ | 6.72 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQAF16N50 onsemi / Fairchild
Description: MOSFET N-CH 500V 11.3A TO3PF, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 5.65A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.
Weitere Produktangebote FQAF16N50 nach Preis ab 4.69 EUR bis 4.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| FQAF16N50 | Hersteller : Fairchild |
 N-MOSFET 500V 11.3A 110W FQAF16N50 Fairchild TFQAF16n50Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FQAF16N50 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 500V 11.3A 3-Pin(3+Tab) TO-3PF Tube |
Produkt ist nicht verfügbar |
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FQAF16N50 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: QFET® Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQAF16N50 | Hersteller : onsemi |
Description: MOSFET N-CH 500V 11.3A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Rds On (Max) @ Id, Vgs: 320mOhm @ 5.65A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQAF16N50 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 7.15A; 110W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 7.15A Power dissipation: 110W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |