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SBC817-40LT1G SBC817-40LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1694 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
500+0.14 EUR
717+0.10 EUR
839+0.09 EUR
1694+0.04 EUR
Mindestbestellmenge: 278
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SBC817-40LT3G SBC817-40LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI NTHL040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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NTH4L040N120SC1 NTH4L040N120SC1 ONSEMI NTH4L040N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Produkt ist nicht verfügbar
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NV24C08DWVLT3G ONSEMI NV24C08LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C08MUW3VLTBG ONSEMI NV24C08LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08WI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08YI-GT3 ONSEMI CAT24C01-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMC6675BZ ONSEMI fdmc6675bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -32A
Produkt ist nicht verfügbar
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FDMS6673BZ ONSEMI fdms6673bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74HC11ADG MC74HC11ADG ONSEMI MC74HC11A-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC11ADR2G MC74HC11ADR2G ONSEMI MC74HC11A-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC11ADTG MC74HC11ADTG ONSEMI mc74hc11a-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS
Operating temperature: -55...125°C
auf Bestellung 1021 Stücke:
Lieferzeit 14-21 Tag (e)
171+0.42 EUR
256+0.28 EUR
341+0.21 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 171
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MC74HC11ADTR2G ONSEMI MC74HC11A-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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BCP56T3G BCP56T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G BC846CLT1G ONSEMI BC846ALT1G.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
848+0.08 EUR
1429+0.05 EUR
1793+0.04 EUR
2223+0.03 EUR
2775+0.03 EUR
Mindestbestellmenge: 455
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NTB25P06T4G ONSEMI ntb25p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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BAT54AWT1G BAT54AWT1G ONSEMI BAT54AW.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 8040 Stücke:
Lieferzeit 14-21 Tag (e)
554+0.13 EUR
1021+0.07 EUR
1244+0.06 EUR
1359+0.05 EUR
1902+0.04 EUR
1961+0.04 EUR
2093+0.03 EUR
Mindestbestellmenge: 554
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SBAT54ALT1G SBAT54ALT1G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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SBAT54ALT3G SBAT54ALT3G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54AWT1G SBAT54AWT1G ONSEMI bat54awt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BC857CWT1G BC857CWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
668+0.11 EUR
Mindestbestellmenge: 668
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SBC857CLT1G SBC857CLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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1SMB5931BT3G 1SMB5931BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2462 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
169+0.42 EUR
201+0.36 EUR
307+0.23 EUR
404+0.18 EUR
421+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 129
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NV24C04DTVLT3G ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C04MUW3VLTBG ONSEMI NV24C04LV-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C04WE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C04YE-GT3 ONSEMI CAV24C02-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC856BWT1G BC856BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
610+0.12 EUR
758+0.09 EUR
1330+0.05 EUR
1667+0.04 EUR
2240+0.03 EUR
Mindestbestellmenge: 455
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SBC856BDW1T1G SBC856BDW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
432+0.17 EUR
675+0.11 EUR
849+0.08 EUR
1516+0.05 EUR
1603+0.05 EUR
3000+0.04 EUR
Mindestbestellmenge: 334
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SBC856BDW1T3G SBC856BDW1T3G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC856BLT1G SBC856BLT1G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC856BLT3G SBC856BLT3G ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC856BWT1G SBC856BWT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D04A9CC7233820&compId=BC85xBWT1.pdf?ci_sign=6e0765da833922d878ef79c21486168c0e08b8cb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 734 Stücke:
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417+0.17 EUR
596+0.12 EUR
734+0.10 EUR
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NCS20071SN2T1G NCS20071SN2T1G ONSEMI NCS20071_2_4.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 3MHz
Input offset voltage: 4.5mV
Integrated circuit features: rail-to-rail output
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
auf Bestellung 2452 Stücke:
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93+0.77 EUR
130+0.55 EUR
154+0.46 EUR
163+0.44 EUR
500+0.42 EUR
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1N5378BG 1N5378BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Manufacturer series: 1N53xxB
Case: CASE017AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 100V
Leakage current: 0.5µA
Power dissipation: 5W
Kind of package: bulk
Type of diode: Zener
Mounting: THT
auf Bestellung 965 Stücke:
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117+0.61 EUR
157+0.46 EUR
204+0.35 EUR
317+0.23 EUR
336+0.21 EUR
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NV24C16DTVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CCC0D5&compId=NV24C16LV-D.pdf?ci_sign=700776b599b431924d8e6cd07138c6ce569e7de9 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C16DWVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CE00D5&compId=NV24C16LV-D.pdf?ci_sign=7f1efbda3124713aa8f91c4e1d3c54537b236c4b Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CF40D5&compId=NV24C16LV-D.pdf?ci_sign=67b575555c0d2739b6f85577c47584ce1e2780b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16SNVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D080D5&compId=NV24C16LV-D.pdf?ci_sign=7b087325c37cd9902aba8e7080a42ead6acdefcb Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16UVLT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D1C0D5&compId=NV24C16LV-D.pdf?ci_sign=ab083a61992d8dbec00eb97ad21b590ba0996bea Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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MMBTA64LT1G MMBTA64LT1G ONSEMI mmbta63lt1-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
725+0.10 EUR
869+0.08 EUR
Mindestbestellmenge: 417
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BZX84C15LT1G BZX84C15LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50nA
auf Bestellung 25653 Stücke:
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548+0.13 EUR
981+0.07 EUR
1352+0.05 EUR
1471+0.05 EUR
1568+0.05 EUR
2273+0.03 EUR
3031+0.02 EUR
3206+0.02 EUR
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MM74HCT138MTC MM74HCT138MTC ONSEMI ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS
Operating temperature: -40...85°C
auf Bestellung 83 Stücke:
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45+1.60 EUR
83+0.86 EUR
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NTHL050N65S3HF ONSEMI nthl050n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Power dissipation: 378W
Case: TO247
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 145A
Drain-source voltage: 650V
Drain current: 37A
On-state resistance: 41mΩ
Polarisation: unipolar
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FQD3P50TM FQD3P50TM ONSEMI FQD3P50.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1031 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
50+1.46 EUR
75+0.96 EUR
79+0.92 EUR
500+0.87 EUR
Mindestbestellmenge: 38
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1N5361BG 1N5361BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 628 Stücke:
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178+0.40 EUR
228+0.31 EUR
290+0.25 EUR
305+0.23 EUR
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MMBT5087LT1G MMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Frequency: 40MHz
Collector-emitter voltage: 50V
Current gain: 250...800
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.58 EUR
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BC857BWT1G
+1
 		BC857BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
600+0.12 EUR
Mindestbestellmenge: 500
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FDMS3660S FDMS3660S ONSEMI fdms3660s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2602 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
40+1.79 EUR
46+1.59 EUR
48+1.50 EUR
250+1.44 EUR
500+1.43 EUR
Mindestbestellmenge: 38
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FDMS7602S ONSEMI fdms7602s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7608S ONSEMI fdms7608s-d.pdf ONSM-S-A0003585462-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74VHC541DTG MC74VHC541DTG ONSEMI mc74vhc541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC541DTR2G MC74VHC541DTR2G ONSEMI mc74vhc541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
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MC74VHC541DWR2G ONSEMI MC74VHC541-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
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MC74AC253DR2G MC74AC253DR2G ONSEMI MC74AC253-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Operating temperature: -40...85°C
Number of inputs: 5
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Technology: CMOS
Kind of integrated circuit: 3-state; multiplexer
Family: AC
Mounting: SMD
Case: SOIC16
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MC74HCT4051ADG MC74HCT4051ADG ONSEMI MC74HCT4051A-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC; 2...12V DC
Family: HCT
Kind of package: tube
Operating temperature: -55...125°C
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.47 EUR
82+0.88 EUR
98+0.73 EUR
118+0.61 EUR
125+0.58 EUR
127+0.57 EUR
144+0.55 EUR
Mindestbestellmenge: 49
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SBC817-40LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e
SBC817-40LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1694 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
500+0.14 EUR
717+0.10 EUR
839+0.09 EUR
1694+0.04 EUR
Mindestbestellmenge: 278
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SBC817-40LT3G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e
SBC817-40LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTHL040N120SC1 NTHL040N120SC1.PDF
NTHL040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L040N120SC1 NTH4L040N120SC1.PDF
NTH4L040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Produkt ist nicht verfügbar
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NV24C08DWVLT3G NV24C08LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C08MUW3VLTBG NV24C08LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08WI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08YI-GT3 CAT24C01-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C08WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C08YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC6675BZ fdmc6675bz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -32A
Produkt ist nicht verfügbar
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FDMS6673BZ fdms6673bz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74HC11ADG MC74HC11A-D.pdf
MC74HC11ADG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC74HC11ADR2G MC74HC11A-D.pdf
MC74HC11ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC11ADTG mc74hc11a-d.pdf
MC74HC11ADTG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS
Operating temperature: -55...125°C
auf Bestellung 1021 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
171+0.42 EUR
256+0.28 EUR
341+0.21 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 171
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC11ADTR2G MC74HC11A-D.pdf
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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BCP56T3G bcp56t1-d.pdf
BCP56T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G BC846ALT1G.PDF
BC846CLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2775 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
848+0.08 EUR
1429+0.05 EUR
1793+0.04 EUR
2223+0.03 EUR
2775+0.03 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
NTB25P06T4G ntb25p06-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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BAT54AWT1G BAT54AW.pdf
BAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 8040 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
554+0.13 EUR
1021+0.07 EUR
1244+0.06 EUR
1359+0.05 EUR
1902+0.04 EUR
1961+0.04 EUR
2093+0.03 EUR
Mindestbestellmenge: 554
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54ALT1G bat54alt1-d.pdf
SBAT54ALT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54ALT3G bat54alt1-d.pdf
SBAT54ALT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54AWT1G bat54awt1-d.pdf
SBAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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BC857CWT1G bc856bwt1-d.pdf
BC857CWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
668+0.11 EUR
Mindestbestellmenge: 668
Im Einkaufswagen  Stück im Wert von  UAH
SBC857CLT1G BC856_7_8.PDF
SBC857CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5931BT3G 1SMB59xxBT3G.PDF
1SMB5931BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 2462 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
169+0.42 EUR
201+0.36 EUR
307+0.23 EUR
404+0.18 EUR
421+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
NV24C04DTVLT3G NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C04MUW3VLTBG NV24C04LV-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C04WE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C04YE-GT3 CAV24C02-D.pdf
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BWT1G bc856bwt1-d.pdf
BC856BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
758+0.09 EUR
1330+0.05 EUR
1667+0.04 EUR
2240+0.03 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BDW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15
SBC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
432+0.17 EUR
675+0.11 EUR
849+0.08 EUR
1516+0.05 EUR
1603+0.05 EUR
3000+0.04 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BDW1T3G bc856bdw1t1-d.pdf
SBC856BDW1T3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SBC856BLT1G BC856_7_8.PDF
SBC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BLT3G BC856_7_8.PDF
SBC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BWT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D04A9CC7233820&compId=BC85xBWT1.pdf?ci_sign=6e0765da833922d878ef79c21486168c0e08b8cb
SBC856BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
596+0.12 EUR
734+0.10 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
NCS20071SN2T1G NCS20071_2_4.PDF
NCS20071SN2T1G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 3MHz
Input offset voltage: 4.5mV
Integrated circuit features: rail-to-rail output
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
auf Bestellung 2452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
130+0.55 EUR
154+0.46 EUR
163+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
1N5378BG 1N53xx.PDF
1N5378BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Manufacturer series: 1N53xxB
Case: CASE017AA
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 100V
Leakage current: 0.5µA
Power dissipation: 5W
Kind of package: bulk
Type of diode: Zener
Mounting: THT
auf Bestellung 965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
157+0.46 EUR
204+0.35 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 117
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NV24C16DTVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CCC0D5&compId=NV24C16LV-D.pdf?ci_sign=700776b599b431924d8e6cd07138c6ce569e7de9
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16DWVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CE00D5&compId=NV24C16LV-D.pdf?ci_sign=7f1efbda3124713aa8f91c4e1d3c54537b236c4b
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CF40D5&compId=NV24C16LV-D.pdf?ci_sign=67b575555c0d2739b6f85577c47584ce1e2780b5
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16SNVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D080D5&compId=NV24C16LV-D.pdf?ci_sign=7b087325c37cd9902aba8e7080a42ead6acdefcb
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16UVLT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D1C0D5&compId=NV24C16LV-D.pdf?ci_sign=ab083a61992d8dbec00eb97ad21b590ba0996bea
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBTA64LT1G mmbta63lt1-d.pdf
MMBTA64LT1G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
725+0.10 EUR
869+0.08 EUR
Mindestbestellmenge: 417
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BZX84C15LT1G BZX84B_BZX84C.PDF
BZX84C15LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 50nA
auf Bestellung 25653 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
548+0.13 EUR
981+0.07 EUR
1352+0.05 EUR
1471+0.05 EUR
1568+0.05 EUR
2273+0.03 EUR
3031+0.02 EUR
3206+0.02 EUR
Mindestbestellmenge: 548
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MM74HCT138MTC ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw
MM74HCT138MTC
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS
Operating temperature: -40...85°C
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.60 EUR
83+0.86 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
NTHL050N65S3HF nthl050n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Power dissipation: 378W
Case: TO247
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 145A
Drain-source voltage: 650V
Drain current: 37A
On-state resistance: 41mΩ
Polarisation: unipolar
Produkt ist nicht verfügbar
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FQD3P50TM FQD3P50.pdf
FQD3P50TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1031 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
50+1.46 EUR
75+0.96 EUR
79+0.92 EUR
500+0.87 EUR
Mindestbestellmenge: 38
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1N5361BG 1N53xx.PDF
1N5361BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 628 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
178+0.40 EUR
228+0.31 EUR
290+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 122
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MMBT5087LT1G mmbt5087lt1-d.pdf
MMBT5087LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Frequency: 40MHz
Collector-emitter voltage: 50V
Current gain: 250...800
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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BC857BWT1G bc856bwt1-d.pdf
BC857BWT1G
+1
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
600+0.12 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FDMS3660S fdms3660s-d.pdf
FDMS3660S
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2602 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
40+1.79 EUR
46+1.59 EUR
48+1.50 EUR
250+1.44 EUR
500+1.43 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7602S fdms7602s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS7608S fdms7608s-d.pdf ONSM-S-A0003585462-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC541DTG mc74vhc541-d.pdf
MC74VHC541DTG
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC541DTR2G mc74vhc541-d.pdf
MC74VHC541DTR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74VHC541DWR2G MC74VHC541-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Produkt ist nicht verfügbar
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MC74AC253DR2G MC74AC253-D.pdf
MC74AC253DR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Operating temperature: -40...85°C
Number of inputs: 5
Supply voltage: 2...6V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
Technology: CMOS
Kind of integrated circuit: 3-state; multiplexer
Family: AC
Mounting: SMD
Case: SOIC16
Produkt ist nicht verfügbar
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MC74HCT4051ADG MC74HCT4051A-D.pdf
MC74HCT4051ADG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC; 2...12V DC
Family: HCT
Kind of package: tube
Operating temperature: -55...125°C
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
82+0.88 EUR
98+0.73 EUR
118+0.61 EUR
125+0.58 EUR
127+0.57 EUR
144+0.55 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
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