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CAT24C16YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C6F7A0D5&compId=CAT24C01-D.pdf?ci_sign=e37b84e1949e7585bb8826ac75016c9088a0d0d3 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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1N4006FFG 1N4006FFG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
auf Bestellung 4299 Stücke:
Lieferzeit 14-21 Tag (e)
3206+0.022 EUR
4167+0.017 EUR
Mindestbestellmenge: 3206
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1N4006RLG 1N4006RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
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FCH040N65S3-F155 FCH040N65S3-F155 ONSEMI fch040n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
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NTH4L040N65S3F NTH4L040N65S3F ONSEMI nth4l040n65s3f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.75 EUR
Mindestbestellmenge: 4
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MC79M12BDTRKG MC79M12BDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Voltage drop: 1.1V
Tolerance: ±4%
Manufacturer series: MC79M00
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MC79M12BTG MC79M12BTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage drop: 1.3V
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
Manufacturer series: MC79M00
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MC14043BDG MC14043BDG ONSEMI mc14043b-d.pdf Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Case: SO16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Number of channels: 4
Kind of output: 3-state
Kind of package: tube
Trigger: level-triggered
auf Bestellung 32 Stücke:
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32+2.23 EUR
Mindestbestellmenge: 32
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RSL10-SENSE-DB-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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NCP752AMX28TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752AMX30TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752AMX33TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX18TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX28TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX30TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX33TCG ONSEMI ncp752-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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FQD18N20V2TM FQD18N20V2TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197BAEABFE7A259&compId=FQD18N20V2.pdf?ci_sign=3edc136442496335d57a7c96b1f762139f111a9f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.6 EUR
54+1.33 EUR
79+0.92 EUR
82+0.87 EUR
500+0.84 EUR
Mindestbestellmenge: 45
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MMBD1501A MMBD1501A ONSEMI mmbd1501-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
165+0.43 EUR
Mindestbestellmenge: 165
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MMBD1505A MMBD1505A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDF8B87534A745&compId=MMBD1501A.pdf?ci_sign=d99323952496222ff3c44c2dafec44384b225081 Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
auf Bestellung 120 Stücke:
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120+0.6 EUR
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2N7002ET1G 2N7002ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E523D3C5A480D2&compId=2N7002E.PDF?ci_sign=f6115950a09ebe5219ed22ec5aca5ee68011428a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
447+0.16 EUR
544+0.13 EUR
860+0.083 EUR
1027+0.07 EUR
1761+0.041 EUR
1859+0.038 EUR
Mindestbestellmenge: 334
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2N7002ET7G 2N7002ET7G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E523D3C5A480D2&compId=2N7002E.PDF?ci_sign=f6115950a09ebe5219ed22ec5aca5ee68011428a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
auf Bestellung 837 Stücke:
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455+0.16 EUR
610+0.12 EUR
837+0.086 EUR
Mindestbestellmenge: 455
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FDC6305N FDC6305N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE88A9F3FE42C8AD3D1&compId=FDC6305N.pdf?ci_sign=7b4d48780218f6e017ecb15434c5d13b43001bc6 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 128mΩ
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.7A
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
117+0.61 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 82
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RSL10-SENSE-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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BZX84C18LT1G BZX84C18LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 18978 Stücke:
Lieferzeit 14-21 Tag (e)
551+0.13 EUR
1021+0.07 EUR
1480+0.048 EUR
1761+0.041 EUR
4099+0.017 EUR
4386+0.016 EUR
Mindestbestellmenge: 551
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SZBZX84C18ET1G SZBZX84C18ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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FQT4N20LTF FQT4N20LTF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197E00F0358E259&compId=FQT4N20L.pdf?ci_sign=3efe0ff46f2895ef1adef85b3e5eca76330d85d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3305 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
87+0.83 EUR
148+0.48 EUR
157+0.46 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 64
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MMBF170 MMBF170 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 1.2Ω
Kind of channel: enhancement
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
323+0.22 EUR
459+0.16 EUR
531+0.13 EUR
920+0.078 EUR
971+0.074 EUR
Mindestbestellmenge: 193
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MMBF170LT1G MMBF170LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C152FCE66C469&compId=MMBF170LT1G.PDF?ci_sign=290e0833eccb810af42552b67dc826a51f4ea9ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6700 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
376+0.19 EUR
567+0.13 EUR
679+0.11 EUR
1060+0.067 EUR
1122+0.064 EUR
1166+0.061 EUR
Mindestbestellmenge: 239
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MMBF4117 MMBF4117 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE02A25F42A745&compId=MMBF4117.pdf?ci_sign=3bb5c012db86a7001291d0c0c7bfb7fd9e16a784 Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Case: SOT23
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
auf Bestellung 3533 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
152+0.47 EUR
191+0.37 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 103
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1N5351BG 1N5351BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
110+0.65 EUR
129+0.56 EUR
269+0.27 EUR
285+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 81
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1N5351BRLG 1N5351BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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BAS21LT3G BAS21LT3G ONSEMI bas19lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
Produkt ist nicht verfügbar
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1N5242B 1N5242B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
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MBRB2545CTT4G MBRB2545CTT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE7D472713E259&compId=MBRB2545CTG.PDF?ci_sign=ffe12f041025c56ae721b09fa02e9a79d266494f Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 619 Stücke:
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35+2.07 EUR
46+1.57 EUR
52+1.4 EUR
55+1.32 EUR
100+1.27 EUR
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FDMC012N03 ONSEMI fdmc012n03-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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BDW94C BDW94C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD3F12EE6F2469&compId=BDW94C.pdf?ci_sign=690bb5e4108c20232162073b0e046bcaf29ed0f5 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
auf Bestellung 179 Stücke:
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44+1.63 EUR
74+0.98 EUR
96+0.75 EUR
102+0.71 EUR
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BDW94CFTU BDW94CFTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB98A9098A1A26C0C7&compId=BDW94CF.pdf?ci_sign=26247f9f884003755699e45e1db0005e5f645378 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
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MJL1302AG MJL1302AG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689AC182058E745&compId=MJL3281A_MJL1302A.PDF?ci_sign=5d8f298dcccdb69a01694becbf4eaad1aee4759d Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MC79M05BDTG MC79M05BDTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
auf Bestellung 241 Stücke:
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61+1.19 EUR
87+0.82 EUR
112+0.64 EUR
166+0.43 EUR
175+0.41 EUR
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MC79M05BDTRKG MC79M05BDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
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MC79M05CDTRKG MC79M05CDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
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H11AA1M H11AA1M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADDC0D6&compId=H11AA1M.pdf?ci_sign=141007c1466383150c9ebc1db402e41b8bfd4cd8 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
auf Bestellung 348 Stücke:
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66+1.09 EUR
118+0.61 EUR
175+0.41 EUR
186+0.39 EUR
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H11AA1SR2M H11AA1SR2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE786D5B68DA054C745&compId=H11AA1SR2M.pdf?ci_sign=c7c9d55bce6b7349fcfc4bfb117bf5878ff28d15 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
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80+0.9 EUR
98+0.73 EUR
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FAN73832MX FAN73832MX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF983F2D23BDC259&compId=FAN73832.pdf?ci_sign=eb14b56d5f0b40de83c56d7163270043f8613286 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
auf Bestellung 941 Stücke:
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49+1.47 EUR
55+1.3 EUR
67+1.07 EUR
71+1.02 EUR
500+0.97 EUR
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FQPF19N20C FQPF19N20C ONSEMI fqpf19n20c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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FQPF27P06 FQPF27P06 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199EA61DADD6259&compId=FQPF27P06.pdf?ci_sign=ec17df6d8f5dd9ac50894e30ab8ac16dd855550e Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM2575T-5G LM2575T-5G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 description Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Operating temperature: -40...125°C
Mounting: THT
Input voltage: 4.75...40V DC
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: TO220-5
Frequency: 42...63kHz
Output voltage: 5V DC
Output current: 1A
Type of integrated circuit: PMIC
Number of channels: 1
auf Bestellung 100 Stücke:
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37+1.96 EUR
39+1.86 EUR
50+1.79 EUR
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SBAT54SLT1G SBAT54SLT1G ONSEMI bat54slt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 2821 Stücke:
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341+0.21 EUR
420+0.17 EUR
497+0.14 EUR
588+0.12 EUR
1067+0.067 EUR
1129+0.063 EUR
Mindestbestellmenge: 228
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MCT62S MCT62S ONSEMI mct62-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Mounting: SMD
Case: Gull wing 8
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
Number of channels: 2
Type of optocoupler: optocoupler
Kind of output: transistor
auf Bestellung 104 Stücke:
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61+1.17 EUR
93+0.78 EUR
104+0.69 EUR
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MBR60H100CTG MBR60H100CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A1DE11ADD8259&compId=MBR60H100CTG.PDF?ci_sign=0a84cd72b5eb7696a1340bacf38ef0b8799ea08c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
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MBR60L45CTG MBR60L45CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE52493F308259&compId=MBR60L45CTG.PDF?ci_sign=1e2f02a7458c30d3faf5c8cfacc56687a4707351 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
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BDV64BG BDV64BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD2C2BD2BFC469&compId=BDV64BG.PDF?ci_sign=4c1079444a53a2960458ba8411143278c88fd201 Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Type of transistor: PNP
Power dissipation: 125W
Polarisation: bipolar
auf Bestellung 95 Stücke:
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BZX84C9V1LT1G BZX84C9V1LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.5µA
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736+0.097 EUR
910+0.079 EUR
1046+0.069 EUR
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CAT24C04C4ATR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C163D46E0D5&compId=CAT24C01-D.pdf?ci_sign=aebd7ea5c889d01e9634dad0f6a82ec053af56a1 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04WI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F78A0D5&compId=CAT24C01-D.pdf?ci_sign=cbfdff4f7ec24647c3d55b4e8738a65c85231f24 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F79E0D5&compId=CAT24C01-D.pdf?ci_sign=58fa9099efac5182185efd662fbbac18657bd214 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FQP11N40C FQP11N40C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B5068BA9876469&compId=FQP11N40C.pdf?ci_sign=5fe18b35e0abcafad5893ab72f1db89a81b884d1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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BAT54CXV3T1G ONSEMI bat54cxv3-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
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SBAT54CTT1G SBAT54CTT1G ONSEMI bat54ctt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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CAT93C46BHU4I-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC26C0D5&compId=CAT93C46B-D.pdf?ci_sign=759e75d695437cb15b17d382dd14985e6f868bc4 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C16YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C6F7A0D5&compId=CAT24C01-D.pdf?ci_sign=e37b84e1949e7585bb8826ac75016c9088a0d0d3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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1N4006FFG pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4006FFG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
auf Bestellung 4299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3206+0.022 EUR
4167+0.017 EUR
Mindestbestellmenge: 3206
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1N4006RLG pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4006RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
Produkt ist nicht verfügbar
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FCH040N65S3-F155 fch040n65s3-d.pdf
FCH040N65S3-F155
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Produkt ist nicht verfügbar
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NTH4L040N65S3F nth4l040n65s3f-d.pdf
NTH4L040N65S3F
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.75 EUR
Mindestbestellmenge: 4
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MC79M12BDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M12BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Voltage drop: 1.1V
Tolerance: ±4%
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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MC79M12BTG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M12BTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage drop: 1.3V
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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MC14043BDG mc14043b-d.pdf
MC14043BDG
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: RS latch
Case: SO16
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Number of channels: 4
Kind of output: 3-state
Kind of package: tube
Trigger: level-triggered
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
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RSL10-SENSE-DB-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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NCP752AMX28TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCP752AMX30TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCP752AMX33TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCP752BMX18TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP752BMX28TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP752BMX30TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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NCP752BMX33TCG ncp752-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
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FQD18N20V2TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197BAEABFE7A259&compId=FQD18N20V2.pdf?ci_sign=3edc136442496335d57a7c96b1f762139f111a9f
FQD18N20V2TM
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
54+1.33 EUR
79+0.92 EUR
82+0.87 EUR
500+0.84 EUR
Mindestbestellmenge: 45
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MMBD1501A mmbd1501-d.pdf
MMBD1501A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
165+0.43 EUR
Mindestbestellmenge: 165
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MMBD1505A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DDF8B87534A745&compId=MMBD1501A.pdf?ci_sign=d99323952496222ff3c44c2dafec44384b225081
MMBD1505A
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
Mindestbestellmenge: 120
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2N7002ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E523D3C5A480D2&compId=2N7002E.PDF?ci_sign=f6115950a09ebe5219ed22ec5aca5ee68011428a
2N7002ET1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
447+0.16 EUR
544+0.13 EUR
860+0.083 EUR
1027+0.07 EUR
1761+0.041 EUR
1859+0.038 EUR
Mindestbestellmenge: 334
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2N7002ET7G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E523D3C5A480D2&compId=2N7002E.PDF?ci_sign=f6115950a09ebe5219ed22ec5aca5ee68011428a
2N7002ET7G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
auf Bestellung 837 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
837+0.086 EUR
Mindestbestellmenge: 455
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FDC6305N pVersion=0046&contRep=ZT&docId=005056AB752F1EE88A9F3FE42C8AD3D1&compId=FDC6305N.pdf?ci_sign=7b4d48780218f6e017ecb15434c5d13b43001bc6
FDC6305N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 128mΩ
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.7A
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
117+0.61 EUR
205+0.35 EUR
217+0.33 EUR
Mindestbestellmenge: 82
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RSL10-SENSE-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C18LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C18LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 18978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
551+0.13 EUR
1021+0.07 EUR
1480+0.048 EUR
1761+0.041 EUR
4099+0.017 EUR
4386+0.016 EUR
Mindestbestellmenge: 551
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SZBZX84C18ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
SZBZX84C18ET1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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FQT4N20LTF pVersion=0046&contRep=ZT&docId=005056AB752F1ED78197E00F0358E259&compId=FQT4N20L.pdf?ci_sign=3efe0ff46f2895ef1adef85b3e5eca76330d85d7
FQT4N20LTF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
87+0.83 EUR
148+0.48 EUR
157+0.46 EUR
500+0.45 EUR
1000+0.44 EUR
Mindestbestellmenge: 64
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MMBF170 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD94EFB7E48E4FC0D3&compId=BS170%2CMMBF170.PDF?ci_sign=3412997d5f321b4eb67995ad7ee0b0f5718b3379
MMBF170
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 1.2Ω
Kind of channel: enhancement
auf Bestellung 1420 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
323+0.22 EUR
459+0.16 EUR
531+0.13 EUR
920+0.078 EUR
971+0.074 EUR
Mindestbestellmenge: 193
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MMBF170LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C152FCE66C469&compId=MMBF170LT1G.PDF?ci_sign=290e0833eccb810af42552b67dc826a51f4ea9ab
MMBF170LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
376+0.19 EUR
567+0.13 EUR
679+0.11 EUR
1060+0.067 EUR
1122+0.064 EUR
1166+0.061 EUR
Mindestbestellmenge: 239
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MMBF4117 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE02A25F42A745&compId=MMBF4117.pdf?ci_sign=3bb5c012db86a7001291d0c0c7bfb7fd9e16a784
MMBF4117
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Case: SOT23
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
auf Bestellung 3533 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
152+0.47 EUR
191+0.37 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 103
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1N5351BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5351BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
auf Bestellung 1003 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
110+0.65 EUR
129+0.56 EUR
269+0.27 EUR
285+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 81
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1N5351BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5351BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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BAS21LT3G bas19lt1-d.pdf
BAS21LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
Produkt ist nicht verfügbar
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1N5242B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B6C7EEA6D600D8&compId=1N52xxB.PDF?ci_sign=3fcd614397d1f6d17dfd4ce9e44224de2474e051
1N5242B
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
Produkt ist nicht verfügbar
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MBRB2545CTT4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE7D472713E259&compId=MBRB2545CTG.PDF?ci_sign=ffe12f041025c56ae721b09fa02e9a79d266494f
MBRB2545CTT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
auf Bestellung 619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
46+1.57 EUR
52+1.4 EUR
55+1.32 EUR
100+1.27 EUR
Mindestbestellmenge: 35
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FDMC012N03 fdmc012n03-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BDW94C pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD3F12EE6F2469&compId=BDW94C.pdf?ci_sign=690bb5e4108c20232162073b0e046bcaf29ed0f5
BDW94C
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
74+0.98 EUR
96+0.75 EUR
102+0.71 EUR
Mindestbestellmenge: 44
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BDW94CFTU pVersion=0046&contRep=ZT&docId=005056AB90B41EDB98A9098A1A26C0C7&compId=BDW94CF.pdf?ci_sign=26247f9f884003755699e45e1db0005e5f645378
BDW94CFTU
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MJL1302AG pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689AC182058E745&compId=MJL3281A_MJL1302A.PDF?ci_sign=5d8f298dcccdb69a01694becbf4eaad1aee4759d
MJL1302AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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MC79M05BDTG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M05BDTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
87+0.82 EUR
112+0.64 EUR
166+0.43 EUR
175+0.41 EUR
Mindestbestellmenge: 61
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MC79M05BDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M05BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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MC79M05CDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M05CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Produkt ist nicht verfügbar
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H11AA1M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADDC0D6&compId=H11AA1M.pdf?ci_sign=141007c1466383150c9ebc1db402e41b8bfd4cd8
H11AA1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
118+0.61 EUR
175+0.41 EUR
186+0.39 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
H11AA1SR2M pVersion=0046&contRep=ZT&docId=005056AB752F1EE786D5B68DA054C745&compId=H11AA1SR2M.pdf?ci_sign=c7c9d55bce6b7349fcfc4bfb117bf5878ff28d15
H11AA1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
98+0.73 EUR
Mindestbestellmenge: 80
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FAN73832MX pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BF983F2D23BDC259&compId=FAN73832.pdf?ci_sign=eb14b56d5f0b40de83c56d7163270043f8613286
FAN73832MX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.47 EUR
55+1.3 EUR
67+1.07 EUR
71+1.02 EUR
500+0.97 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
FQPF19N20C fqpf19n20c-d.pdf
FQPF19N20C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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FQPF27P06 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199EA61DADD6259&compId=FQPF27P06.pdf?ci_sign=ec17df6d8f5dd9ac50894e30ab8ac16dd855550e
FQPF27P06
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM2575T-5G description pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
LM2575T-5G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Operating temperature: -40...125°C
Mounting: THT
Input voltage: 4.75...40V DC
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Topology: buck
Case: TO220-5
Frequency: 42...63kHz
Output voltage: 5V DC
Output current: 1A
Type of integrated circuit: PMIC
Number of channels: 1
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
37+1.96 EUR
39+1.86 EUR
50+1.79 EUR
Mindestbestellmenge: 28
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SBAT54SLT1G bat54slt1-d.pdf
SBAT54SLT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
auf Bestellung 2821 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
341+0.21 EUR
420+0.17 EUR
497+0.14 EUR
588+0.12 EUR
1067+0.067 EUR
1129+0.063 EUR
Mindestbestellmenge: 228
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MCT62S mct62-d.pdf
MCT62S
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Mounting: SMD
Case: Gull wing 8
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
Number of channels: 2
Type of optocoupler: optocoupler
Kind of output: transistor
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
93+0.78 EUR
104+0.69 EUR
Mindestbestellmenge: 61
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MBR60H100CTG pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819A1DE11ADD8259&compId=MBR60H100CTG.PDF?ci_sign=0a84cd72b5eb7696a1340bacf38ef0b8799ea08c
MBR60H100CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
Produkt ist nicht verfügbar
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MBR60L45CTG pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE52493F308259&compId=MBR60L45CTG.PDF?ci_sign=1e2f02a7458c30d3faf5c8cfacc56687a4707351
MBR60L45CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
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BDV64BG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD2C2BD2BFC469&compId=BDV64BG.PDF?ci_sign=4c1079444a53a2960458ba8411143278c88fd201
BDV64BG
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Type of transistor: PNP
Power dissipation: 125W
Polarisation: bipolar
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 15
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BZX84C9V1LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C9V1LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; reel,tape; SOT23; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.5µA
auf Bestellung 1046 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
736+0.097 EUR
910+0.079 EUR
1046+0.069 EUR
Mindestbestellmenge: 556
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CAT24C04C4ATR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C163D46E0D5&compId=CAT24C01-D.pdf?ci_sign=aebd7ea5c889d01e9634dad0f6a82ec053af56a1
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04WI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F78A0D5&compId=CAT24C01-D.pdf?ci_sign=cbfdff4f7ec24647c3d55b4e8738a65c85231f24
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C04YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F79E0D5&compId=CAT24C01-D.pdf?ci_sign=58fa9099efac5182185efd662fbbac18657bd214
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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FQP11N40C pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B5068BA9876469&compId=FQP11N40C.pdf?ci_sign=5fe18b35e0abcafad5893ab72f1db89a81b884d1
FQP11N40C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; 135W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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BAT54CXV3T1G bat54cxv3-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC89; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC89
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.24W
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SBAT54CTT1G bat54ctt1-d.pdf
SBAT54CTT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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CAT93C46BHU4I-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC26C0D5&compId=CAT93C46B-D.pdf?ci_sign=759e75d695437cb15b17d382dd14985e6f868bc4
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; Microwire; 128x8/64x16bit; 1.8÷5.5V
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: Microwire
Memory organisation: 128x8/64x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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