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CNY173SR2VM CNY173SR2VM ONSEMI CNY172M.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
131+0.55 EUR
160+0.45 EUR
175+0.41 EUR
Mindestbestellmenge: 95
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CNY173TVM CNY173TVM ONSEMI CNY173M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Produkt ist nicht verfügbar
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KSD1691GS KSD1691GS ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
77+0.94 EUR
87+0.83 EUR
108+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 70
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KSD1691GSTU ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
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KSD1691YS ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Produkt ist nicht verfügbar
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KSD1691YSTU ONSEMI KSD1691.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616AGBU ONSEMI KSD1616A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
auf Bestellung 9980 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
210+0.34 EUR
363+0.20 EUR
500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 129
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KSD1616AGTA ONSEMI KSD1616A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92 Formed
Produkt ist nicht verfügbar
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KSD1616AYTA ONSEMI KSD1616A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 135...270
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
Produkt ist nicht verfügbar
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KSD880YTU ONSEMI KSD880.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Polarisation: bipolar
Frequency: 3MHz
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 3A
Type of transistor: NPN
Produkt ist nicht verfügbar
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KSA928AYTA ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE30A131AC300D6&compId=KSA928A.PDF?ci_sign=23220499c41c3c7681a657e40cf16bd7df36a9f4 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Case: TO92 Formed
Produkt ist nicht verfügbar
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KSC2383OTA ONSEMI KSC2383.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Produkt ist nicht verfügbar
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KSC1008CYTA KSC1008CYTA ONSEMI KSC1008.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
278+0.26 EUR
360+0.20 EUR
521+0.14 EUR
770+0.09 EUR
820+0.09 EUR
Mindestbestellmenge: 162
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KSC1008YBU ONSEMI KSC1008.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Produkt ist nicht verfügbar
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KSC1008YTA ONSEMI KSC1008.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Produkt ist nicht verfügbar
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2N7002 2N7002 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 78219 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
295+0.24 EUR
382+0.19 EUR
421+0.17 EUR
685+0.10 EUR
725+0.10 EUR
Mindestbestellmenge: 173
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NTHL075N065SC1 NTHL075N065SC1 ONSEMI NTHL075N065SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC1G09DTT1G
+1
 		MC74VHC1G09DTT1G ONSEMI mc74vhc1g09-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: AND
Number of inputs: 2
Family: VHC
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
527+0.14 EUR
556+0.13 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 455
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NLSV1T34DFT2G NLSV1T34DFT2G ONSEMI NLSV1T34DFT2G.PDF Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Supply voltage: 0.9...4.5V DC
Quiescent current: 2µA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
80+0.90 EUR
92+0.78 EUR
118+0.61 EUR
125+0.58 EUR
500+0.57 EUR
Mindestbestellmenge: 64
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1N4448 1N4448 ONSEMI 1n4448-f.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 3031 Stücke:
Lieferzeit 14-21 Tag (e)
585+0.12 EUR
1283+0.06 EUR
1755+0.04 EUR
2041+0.04 EUR
2315+0.03 EUR
2689+0.03 EUR
3031+0.02 EUR
Mindestbestellmenge: 585
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1N5401G 1N5401G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
233+0.31 EUR
338+0.21 EUR
358+0.20 EUR
371+0.19 EUR
Mindestbestellmenge: 167
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4N25M 4N25M ONSEMI 4N25M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Insulation voltage: 0.85kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
125+0.57 EUR
164+0.44 EUR
218+0.33 EUR
Mindestbestellmenge: 81
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1N4004G 1N4004G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
523+0.14 EUR
Mindestbestellmenge: 334
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6N136VM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.86 EUR
200+2.50 EUR
Mindestbestellmenge: 38
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1N4006G 1N4006G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
521+0.14 EUR
783+0.09 EUR
1180+0.06 EUR
1250+0.06 EUR
Mindestbestellmenge: 358
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MC74ACT139DG MC74ACT139DG ONSEMI MC74AC139-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Manufacturer series: ACT
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
87+0.83 EUR
102+0.70 EUR
106+0.67 EUR
112+0.64 EUR
Mindestbestellmenge: 44
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6N137SM 6N137SM ONSEMI 4N35SM.pdf 6N137SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
79+0.91 EUR
91+0.79 EUR
96+0.75 EUR
100+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 44
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FQD8P10TM FQD8P10TM ONSEMI FQD8P10.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2099 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
93+0.78 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 73
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DTA115EET1G DTA115EET1G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
544+0.13 EUR
879+0.08 EUR
1651+0.04 EUR
1749+0.04 EUR
6000+0.04 EUR
Mindestbestellmenge: 334
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6N136SM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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KSA1298YMTF KSA1298YMTF ONSEMI KSA1298.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
451+0.16 EUR
685+0.10 EUR
1667+0.04 EUR
1767+0.04 EUR
Mindestbestellmenge: 278
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FXMA2104UMX FXMA2104UMX ONSEMI FXMA2104UMX.pdf Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 3657 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
90+0.80 EUR
91+0.79 EUR
94+0.77 EUR
96+0.75 EUR
250+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 87
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1N4005G 1N4005G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
388+0.18 EUR
487+0.15 EUR
706+0.10 EUR
1484+0.05 EUR
1573+0.05 EUR
Mindestbestellmenge: 278
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FSUSB242GEVB ONSEMI Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+155.81 EUR
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UF4007 UF4007 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784F0257FC3EB6745&compId=UF4001.pdf?ci_sign=9cdb30857d0068df0f61039939874202b298f335 Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
242+0.30 EUR
410+0.17 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 148
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FGH40N60SMD-F085 ONSEMI fgh40n60smd_f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGAF40N60SMD ONSEMI fgaf40n60smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGAF40N60UFTU ONSEMI fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGB20N60SFD-F085 ONSEMI fgb20n60s_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40N65SMD ONSEMI fga40n65smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 ONSEMI fgh60t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH60T65SQD-F155 ONSEMI fgh60t65sqd-f155-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGA40T65SHD ONSEMI fga40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGB40T65SPD-F085 FGB40T65SPD-F085 ONSEMI fgb40t65spd-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.78 EUR
18+4.18 EUR
19+3.96 EUR
100+3.88 EUR
250+3.80 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 ONSEMI fgh40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 ONSEMI fgh40t65shdf-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 ONSEMI fgh40t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQD ONSEMI fghl40t65mqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQDT ONSEMI fghl40t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHD-F155 ONSEMI fgh75t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHDT-F155 ONSEMI fgh75t65shdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHDTL4 ONSEMI fgh75t65shdtl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SQD-F155 ONSEMI fgh75t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SQDNL4 ONSEMI fgh75t65sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SQDT-F155 ONSEMI fgh75t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTR5105PT1G NTR5105PT1G ONSEMI ntr5105p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1254 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
385+0.19 EUR
549+0.13 EUR
637+0.11 EUR
858+0.08 EUR
884+0.08 EUR
906+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 250
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TL431ACDG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
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TL431ACDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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CNY173SR2VM CNY172M.pdf
CNY173SR2VM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; Gull wing 6; CNY17
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 1790 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
131+0.55 EUR
160+0.45 EUR
175+0.41 EUR
Mindestbestellmenge: 95
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CNY173TVM CNY173M.pdf
CNY173TVM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; DIP6; CNY17
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Produkt ist nicht verfügbar
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KSD1691GS KSD1691.pdf
KSD1691GS
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
77+0.94 EUR
87+0.83 EUR
108+0.66 EUR
114+0.63 EUR
Mindestbestellmenge: 70
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KSD1691GSTU KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
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KSD1691YS KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: bulk
Produkt ist nicht verfügbar
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KSD1691YSTU KSD1691.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 20W; TO126ISO
Mounting: THT
Type of transistor: NPN
Collector-emitter voltage: 60V
Current gain: 160...320
Collector current: 5A
Pulsed collector current: 8A
Case: TO126ISO
Power dissipation: 20W
Polarisation: bipolar
Kind of package: tube
Produkt ist nicht verfügbar
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KSD1616AGBU KSD1616A.pdf
KSD1616AGBU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Pulsed collector current: 2A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: bulk
Mounting: THT
Case: TO92
auf Bestellung 9980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
210+0.34 EUR
363+0.20 EUR
500+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 129
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KSD1616AGTA KSD1616A.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92 Formed
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 200...400
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92 Formed
Produkt ist nicht verfügbar
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KSD1616AYTA KSD1616A.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 0.75W; TO92
Frequency: 160MHz
Collector-emitter voltage: 60V
Current gain: 135...270
Collector current: 1A
Type of transistor: NPN
Power dissipation: 0.75W
Polarisation: bipolar
Kind of package: Ammo Pack
Mounting: THT
Case: TO92
Produkt ist nicht verfügbar
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KSD880YTU KSD880.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 30W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 30W
Polarisation: bipolar
Frequency: 3MHz
Collector-emitter voltage: 60V
Current gain: 100...200
Collector current: 3A
Type of transistor: NPN
Produkt ist nicht verfügbar
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KSA928AYTA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE30A131AC300D6&compId=KSA928A.PDF?ci_sign=23220499c41c3c7681a657e40cf16bd7df36a9f4
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Mounting: THT
Kind of package: Ammo Pack
Frequency: 120MHz
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Case: TO92 Formed
Produkt ist nicht verfügbar
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KSC2383OTA KSC2383.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Current gain: 100...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Produkt ist nicht verfügbar
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KSC1008CYTA KSC1008.pdf
KSC1008CYTA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
auf Bestellung 1691 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
278+0.26 EUR
360+0.20 EUR
521+0.14 EUR
770+0.09 EUR
820+0.09 EUR
Mindestbestellmenge: 162
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KSC1008YBU KSC1008.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92
Mounting: THT
Case: TO92
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: bulk
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Produkt ist nicht verfügbar
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KSC1008YTA KSC1008.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 0.7A; 0.8W; TO92 Formed
Mounting: THT
Case: TO92 Formed
Collector current: 0.7A
Type of transistor: NPN
Power dissipation: 0.8W
Polarisation: bipolar
Kind of package: Ammo Pack
Frequency: 50MHz
Collector-emitter voltage: 60V
Current gain: 120...240
Produkt ist nicht verfügbar
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2N7002 2N7000_2N7002_NDS7002A.PDF
2N7002
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 78219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
295+0.24 EUR
382+0.19 EUR
421+0.17 EUR
685+0.10 EUR
725+0.10 EUR
Mindestbestellmenge: 173
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NTHL075N065SC1 NTHL075N065SC1.PDF
NTHL075N065SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74VHC1G09DTT1G mc74vhc1g09-d.pdf
MC74VHC1G09DTT1G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: AND
Number of inputs: 2
Family: VHC
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
527+0.14 EUR
556+0.13 EUR
695+0.10 EUR
736+0.10 EUR
Mindestbestellmenge: 455
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NLSV1T34DFT2G NLSV1T34DFT2G.PDF
NLSV1T34DFT2G
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Case: SOT353
Supply voltage: 0.9...4.5V DC
Quiescent current: 2µA
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 1063 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
80+0.90 EUR
92+0.78 EUR
118+0.61 EUR
125+0.58 EUR
500+0.57 EUR
Mindestbestellmenge: 64
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1N4448 1n4448-f.pdf
1N4448
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.4A
Max. forward impulse current: 4A
Power dissipation: 0.5W
auf Bestellung 3031 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1283+0.06 EUR
1755+0.04 EUR
2041+0.04 EUR
2315+0.03 EUR
2689+0.03 EUR
3031+0.02 EUR
Mindestbestellmenge: 585
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1N5401G 1N540x.PDF
1N5401G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
233+0.31 EUR
338+0.21 EUR
358+0.20 EUR
371+0.19 EUR
Mindestbestellmenge: 167
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4N25M 4N25M-ONS.pdf
4N25M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 0.85kV; CTR@If: 20%@10mA
Mounting: THT
Insulation voltage: 0.85kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Kind of output: transistor
auf Bestellung 218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
125+0.57 EUR
164+0.44 EUR
218+0.33 EUR
Mindestbestellmenge: 81
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1N4004G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4004G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
523+0.14 EUR
Mindestbestellmenge: 334
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6N136VM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+2.86 EUR
200+2.50 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
1N4006G 1N4001-D.PDF
1N4006G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
521+0.14 EUR
783+0.09 EUR
1180+0.06 EUR
1250+0.06 EUR
Mindestbestellmenge: 358
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MC74ACT139DG MC74AC139-D.pdf
MC74ACT139DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
Manufacturer series: ACT
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
87+0.83 EUR
102+0.70 EUR
106+0.67 EUR
112+0.64 EUR
Mindestbestellmenge: 44
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6N137SM 4N35SM.pdf 6N137SM.pdf
6N137SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Manufacturer series: 6N137M
auf Bestellung 796 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
79+0.91 EUR
91+0.79 EUR
96+0.75 EUR
100+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 44
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FQD8P10TM FQD8P10.pdf
FQD8P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2099 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
93+0.78 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 73
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DTA115EET1G dta115e-d.pdf
DTA115EET1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
544+0.13 EUR
879+0.08 EUR
1651+0.04 EUR
1749+0.04 EUR
6000+0.04 EUR
Mindestbestellmenge: 334
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6N136SM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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KSA1298YMTF KSA1298.PDF
KSA1298YMTF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2055 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
451+0.16 EUR
685+0.10 EUR
1667+0.04 EUR
1767+0.04 EUR
Mindestbestellmenge: 278
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FXMA2104UMX FXMA2104UMX.pdf
FXMA2104UMX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 3657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
90+0.80 EUR
91+0.79 EUR
94+0.77 EUR
96+0.75 EUR
250+0.74 EUR
500+0.72 EUR
Mindestbestellmenge: 87
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1N4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4005G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
388+0.18 EUR
487+0.15 EUR
706+0.10 EUR
1484+0.05 EUR
1573+0.05 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
FSUSB242GEVB
Hersteller: ONSEMI
Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+155.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF4007 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784F0257FC3EB6745&compId=UF4001.pdf?ci_sign=9cdb30857d0068df0f61039939874202b298f335
UF4007
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
242+0.30 EUR
410+0.17 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 160A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGB20N60SFD-F085 fgb20n60s_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40N65SMD fga40n65smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 fgh60t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SQD-F155 fgh60t65sqd-f155-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGA40T65SHD fga40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGB40T65SPD-F085 fgb40t65spd-f085-d.pdf
FGB40T65SPD-F085
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
18+4.18 EUR
19+3.96 EUR
100+3.88 EUR
250+3.80 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 fgh40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 fgh40t65shdf-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 fgh40t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQD fghl40t65mqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQDT fghl40t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHD-F155 fgh75t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHDT-F155 fgh75t65shdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHDTL4 fgh75t65shdtl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
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FGH75T65SQD-F155 fgh75t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SQDNL4 fgh75t65sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTR5105PT1G ntr5105p-d.pdf
NTR5105PT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1254 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
385+0.19 EUR
549+0.13 EUR
637+0.11 EUR
858+0.08 EUR
884+0.08 EUR
906+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 250
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TL431ACDG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
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TL431ACDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
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TL431ACLPG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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