| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NUP4114UPXV6T1G | ONSEMI |
 Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NUP4114UPXV6T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZNUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SS12FP | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NZT7053 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Frequency: 200MHz Mounting: SMD Collector-emitter voltage: 100V Power dissipation: 1W Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Collector current: 1.5A |
auf Bestellung 3831 Stücke: Lieferzeit 14-21 Tag (e) |
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NDS9948 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1299 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7003P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Kind of channel: enhancement Technology: PowerTrench® Drain current: -0.34A Gate charge: 2.2nC On-state resistance: 10Ω Gate-source voltage: ±20V |
auf Bestellung 2330 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1273 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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NDT452AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2506 Stücke: Lieferzeit 14-21 Tag (e) |
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NDC7001C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 60/-60V Kind of channel: enhancement Drain current: 0.51/-0.34A Gate charge: 1.5/2.2nC On-state resistance: 4/10Ω Gate-source voltage: ±20V |
auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Power dissipation: 0.25W Case: SOT563F Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20/-20V Kind of channel: enhancement Version: ESD Drain current: 0.39/-0.31A On-state resistance: 0.55/0.9Ω Gate-source voltage: ±6V |
auf Bestellung 3459 Stücke: Lieferzeit 14-21 Tag (e) |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Mounting: SMD Case: SC70-6; SC88; SOT363 On-state resistance: 1.6Ω Kind of package: reel; tape Power dissipation: 0.25W Polarisation: unipolar Drain current: 0.212A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V |
auf Bestellung 3026 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1307 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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NJW3281G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Power dissipation: 200W Case: TO3P Mounting: THT Kind of package: tube Collector current: 15A Collector-emitter voltage: 250V Application: automotive industry Current gain: 45...150 Frequency: 30MHz |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 20nC |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Mounting: SMD Power dissipation: 1.25W Gate charge: 6nC Polarisation: unipolar Drain current: -1.56A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 0.35Ω |
auf Bestellung 2663 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124XET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 80...150 |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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J176-D74Z | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: 30V On-state resistance: 250Ω Mounting: THT Kind of package: Ammo Pack Gate current: 50mA |
auf Bestellung 1958 Stücke: Lieferzeit 14-21 Tag (e) |
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| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape |
auf Bestellung 1030 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SRDA3.3-4DR2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5V Peak pulse power dissipation: 0.5kW Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 3.3V Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SZESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5V; SOD923; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Kind of package: reel; tape Case: SOD923 |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZUESD3.3DT5G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74AC273DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Case: SO20-W Number of channels: 8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered Technology: CMOS |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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| 15GN03CA-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Mounting: SMD Kind of package: reel; tape Frequency: 1.5GHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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RB520S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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RB520S30T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZMMSZ4700T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 4372 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5258BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 3840 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN340P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -10A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4387 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU6K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
auf Bestellung 782 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU6D | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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GBU6J | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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GBU6A | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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GBU6B | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM5Z12VT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5Z |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SZMM5Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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US1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NRVUS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP333FCT2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP4 On-state resistance: 0.4Ω Kind of package: reel; tape Supply voltage: 1.2...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FSBB20CH60C | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027 Type of integrated circuit: driver Topology: IGBT three-phase bridge Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 3 Case: SPMMC-027 Output current: 20A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 62W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FFSH3065B-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.7V Load current: 37A Max. off-state voltage: 650V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FFSB3065B-F085 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.7V Load current: 73A Max. off-state voltage: 650V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP163ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.175V Output voltage: 3.3V Output current: 0.25A Case: SOT23-5 Mounting: SMD Manufacturer series: NCP163 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.2...5.5V |
auf Bestellung 2412 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC1501 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| GBPC1501W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
 |
NVGS5120PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Pulsed drain current: -20A Drain current: -2.9A Gate charge: 18.1nC On-state resistance: 111mΩ Power dissipation: 1.1W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 2895 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSS20300MR6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 3A; 0.545W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.545W Collector current: 3A Collector-emitter voltage: 20V Application: automotive industry Polarisation: bipolar Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MBT35200MT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 35V; 2A; 1W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1W Collector current: 2A Collector-emitter voltage: 35V Polarisation: bipolar Type of transistor: PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSS30201MR6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV2002SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV Type of integrated circuit: operational amplifier Case: TSOP6 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 9.5mV Voltage supply range: 0.9...7V DC Slew rate: 1.2V/μs Bandwidth: 0.9MHz Integrated circuit features: rail-to-rail Number of channels: single; 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV2002SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV Type of integrated circuit: operational amplifier Case: TSOP6 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 9.5mV Voltage supply range: 0.9...7V DC Slew rate: 1.2V/μs Bandwidth: 0.9MHz Integrated circuit features: rail-to-rail Number of channels: single; 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SNSS30201MR6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6 Case: TSOP6 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Application: automotive industry Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NUP3115UPMUTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.8V; bidirectional; uDFN6; Ch: 3; reel,tape Case: uDFN6 Mounting: SMD Semiconductor structure: bidirectional Type of diode: TVS array Number of channels: 3 Max. off-state voltage: 5.5V Breakdown voltage: 6.8V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
|
|
FOD8012A | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 3.75kV; 15Mbps; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: logic Transfer rate: 15Mbps Case: SO8 Slew rate: 40kV/μs Turn-on time: 6.5ns Turn-off time: 6.5ns Output voltage: -0.5...6.5V Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NUP4114UPXV6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP4114UPXV6T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNUP4114UCLW1T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS12FP |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZT7053 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Frequency: 200MHz
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Collector current: 1.5A
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Frequency: 200MHz
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Collector current: 1.5A
auf Bestellung 3831 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 106+ | 0.8 EUR |
| 123+ | 0.69 EUR |
| 204+ | 0.42 EUR |
| 250+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| NDS9948 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1299 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 1.46 EUR |
| 78+ | 1.09 EUR |
| 88+ | 0.98 EUR |
| 117+ | 0.73 EUR |
| 134+ | 0.64 EUR |
| 500+ | 0.46 EUR |
| NDC7003P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Kind of channel: enhancement
Technology: PowerTrench®
Drain current: -0.34A
Gate charge: 2.2nC
On-state resistance: 10Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Kind of channel: enhancement
Technology: PowerTrench®
Drain current: -0.34A
Gate charge: 2.2nC
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 205+ | 0.42 EUR |
| 278+ | 0.31 EUR |
| 317+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 1500+ | 0.17 EUR |
| NTD20P06LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1273 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.89 EUR |
| 67+ | 1.29 EUR |
| 77+ | 1.12 EUR |
| 87+ | 0.99 EUR |
| 101+ | 0.84 EUR |
| 111+ | 0.76 EUR |
| 200+ | 0.7 EUR |
| 500+ | 0.63 EUR |
| NTZD3155CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 0.48 EUR |
| 214+ | 0.39 EUR |
| 278+ | 0.31 EUR |
| NDT452AP |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2506 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 45+ | 1.93 EUR |
| 53+ | 1.61 EUR |
| 61+ | 1.42 EUR |
| 85+ | 1 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.8 EUR |
| NDC7001C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60/-60V
Kind of channel: enhancement
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 60/-60V
Kind of channel: enhancement
Drain current: 0.51/-0.34A
Gate charge: 1.5/2.2nC
On-state resistance: 4/10Ω
Gate-source voltage: ±20V
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 1 EUR |
| 123+ | 0.69 EUR |
| 151+ | 0.56 EUR |
| 233+ | 0.37 EUR |
| 268+ | 0.32 EUR |
| 298+ | 0.29 EUR |
| NTZD3155CT2G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.25W
Case: SOT563F
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Kind of channel: enhancement
Version: ESD
Drain current: 0.39/-0.31A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±6V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Power dissipation: 0.25W
Case: SOT563F
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20/-20V
Kind of channel: enhancement
Version: ESD
Drain current: 0.39/-0.31A
On-state resistance: 0.55/0.9Ω
Gate-source voltage: ±6V
auf Bestellung 3459 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 250+ | 0.35 EUR |
| 325+ | 0.26 EUR |
| 472+ | 0.18 EUR |
| 610+ | 0.14 EUR |
| NVJD5121NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Mounting: SMD
Case: SC70-6; SC88; SOT363
On-state resistance: 1.6Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Polarisation: unipolar
Drain current: 0.212A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Mounting: SMD
Case: SC70-6; SC88; SOT363
On-state resistance: 1.6Ω
Kind of package: reel; tape
Power dissipation: 0.25W
Polarisation: unipolar
Drain current: 0.212A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.32 EUR |
| 321+ | 0.26 EUR |
| 363+ | 0.24 EUR |
| 511+ | 0.17 EUR |
| 610+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.12 EUR |
| NVMFS5113PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1307 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.5 EUR |
| 29+ | 2.94 EUR |
| 100+ | 2.09 EUR |
| 500+ | 2.02 EUR |
| NTR4171PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 167+ | 0.51 EUR |
| 182+ | 0.46 EUR |
| NJW3281G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3P
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 250V
Application: automotive industry
Current gain: 45...150
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO3P
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 250V
Application: automotive industry
Current gain: 45...150
Frequency: 30MHz
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| NTD25P03LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
auf Bestellung 345 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 1.81 EUR |
| 61+ | 1.42 EUR |
| 69+ | 1.24 EUR |
| 84+ | 1.02 EUR |
| NTR4502PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: -1.56A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.35Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Gate charge: 6nC
Polarisation: unipolar
Drain current: -1.56A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.35Ω
auf Bestellung 2663 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 261+ | 0.32 EUR |
| 317+ | 0.27 EUR |
| 472+ | 0.18 EUR |
| 521+ | 0.17 EUR |
| 569+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| DTC124XET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...150
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 511+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| 1058+ | 0.081 EUR |
| 1498+ | 0.057 EUR |
| 1707+ | 0.05 EUR |
| J176-D74Z |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
auf Bestellung 1958 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 152+ | 0.56 EUR |
| 189+ | 0.45 EUR |
| 224+ | 0.38 EUR |
| 265+ | 0.32 EUR |
| 325+ | 0.26 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| UESD3.3DT5G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
auf Bestellung 1030 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 157+ | 0.55 EUR |
| 241+ | 0.36 EUR |
| 293+ | 0.29 EUR |
| 374+ | 0.23 EUR |
| 439+ | 0.19 EUR |
| 500+ | 0.17 EUR |
| 603+ | 0.14 EUR |
| ESD9X3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRDA3.3-4DR2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9X3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9C3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD9C3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Kind of package: reel; tape
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Kind of package: reel; tape
Case: SOD923
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.66 EUR |
| SZUESD3.3DT5G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC273DWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Case: SO20-W
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Case: SO20-W
Number of channels: 8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Technology: CMOS
auf Bestellung 1499 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 1.63 EUR |
| 75+ | 1.14 EUR |
| 87+ | 0.99 EUR |
| 104+ | 0.82 EUR |
| 250+ | 0.77 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.73 EUR |
| 15GN03CA-TB-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB520S30T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB520S30T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ4700T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMA5938BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 4372 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 148+ | 0.58 EUR |
| 246+ | 0.35 EUR |
| 353+ | 0.24 EUR |
| 404+ | 0.21 EUR |
| 477+ | 0.18 EUR |
| 532+ | 0.15 EUR |
| MMSZ5258BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3840 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 715+ | 0.12 EUR |
| 981+ | 0.087 EUR |
| 1250+ | 0.068 EUR |
| 1924+ | 0.044 EUR |
| 3000+ | 0.037 EUR |
| FDN340P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4387 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 141+ | 0.61 EUR |
| 162+ | 0.52 EUR |
| 231+ | 0.37 EUR |
| 268+ | 0.32 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |
| 1500+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| GBU6K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
auf Bestellung 782 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.38 EUR |
| 55+ | 1.57 EUR |
| 61+ | 1.39 EUR |
| 100+ | 1.09 EUR |
| GBU6D |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU6J |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU6A |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU6B |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM5Z12VT5G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZMM5Z12VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| US1KFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS1KFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| NCP333FCT2G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
On-state resistance: 0.4Ω
Kind of package: reel; tape
Supply voltage: 1.2...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| FSBB20CH60C |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMMC-027
Output current: 20A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 62W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMMC-027
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 3
Case: SPMMC-027
Output current: 20A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 62W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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| FFSH3065B-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 37A
Max. off-state voltage: 650V
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 37A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 37A
Max. off-state voltage: 650V
Application: automotive industry
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| FFSB3065B-F085 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 73A
Max. off-state voltage: 650V
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 73A; reel,tape
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Load current: 73A
Max. off-state voltage: 650V
Application: automotive industry
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| NCP163ASN330T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.175V
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
auf Bestellung 2412 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 224+ | 0.38 EUR |
| 256+ | 0.33 EUR |
| 304+ | 0.29 EUR |
| 309+ | 0.27 EUR |
| GBPC1501 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC1501W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| NVGS5120PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Pulsed drain current: -20A
Drain current: -2.9A
Gate charge: 18.1nC
On-state resistance: 111mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.9A; Idm: -20A; 1.1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Pulsed drain current: -20A
Drain current: -2.9A
Gate charge: 18.1nC
On-state resistance: 111mΩ
Power dissipation: 1.1W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 2895 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 1.51 EUR |
| 70+ | 1.21 EUR |
| 79+ | 1.08 EUR |
| 103+ | 0.83 EUR |
| 115+ | 0.75 EUR |
| 500+ | 0.63 EUR |
| NSS20300MR6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 0.545W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.545W
Collector current: 3A
Collector-emitter voltage: 20V
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 0.545W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.545W
Collector current: 3A
Collector-emitter voltage: 20V
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
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| MBT35200MT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 35V; 2A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 35V
Polarisation: bipolar
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 35V; 2A; 1W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 35V
Polarisation: bipolar
Type of transistor: PNP
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| NSS30201MR6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Type of transistor: NPN
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| NCV2002SN1T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
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| NCV2002SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.9MHz; Ch: 1; 0.9÷7VDC; TSOP6; 9.5mV
Type of integrated circuit: operational amplifier
Case: TSOP6
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 9.5mV
Voltage supply range: 0.9...7V DC
Slew rate: 1.2V/μs
Bandwidth: 0.9MHz
Integrated circuit features: rail-to-rail
Number of channels: single; 1
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| SNSS30201MR6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 1.75W; TSOP6
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: NPN
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| NUP3115UPMUTAG |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; bidirectional; uDFN6; Ch: 3; reel,tape
Case: uDFN6
Mounting: SMD
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 3
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8V
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; bidirectional; uDFN6; Ch: 3; reel,tape
Case: uDFN6
Mounting: SMD
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 3
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8V
Kind of package: reel; tape
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| FOD8012A |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 3.75kV; 15Mbps; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Transfer rate: 15Mbps
Case: SO8
Slew rate: 40kV/μs
Turn-on time: 6.5ns
Turn-off time: 6.5ns
Output voltage: -0.5...6.5V
Insulation voltage: 3.75kV
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 3.75kV; 15Mbps; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: logic
Transfer rate: 15Mbps
Case: SO8
Slew rate: 40kV/μs
Turn-on time: 6.5ns
Turn-off time: 6.5ns
Output voltage: -0.5...6.5V
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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