| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MJD3055RLG | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
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NJVMJD3055T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz Application: automotive industry |
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| FPF2495CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C Kind of package: reel; tape Active logical level: high Case: WLCSP9 Type of integrated circuit: power switch Mounting: SMD Operating temperature: -40...85°C On-state resistance: 0.1Ω Number of channels: 1 Supply voltage: 2.5...5.5V DC Output current: 2.2A Integrated circuit features: thermal protection; undervoltage protection |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FPF2495UCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTC144EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...140 |
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| DTC144TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Manufacturer standard package: 3000pcs. Current gain: 120...300 |
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| DTC144TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 120...300 |
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1N4148TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; reel,tape; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.5W Capacitance: 4pF Max. forward impulse current: 1A |
auf Bestellung 9384 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP3335AMN330R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD Mounting: SMD Case: DFN10 Number of channels: 2 Operating temperature: -40...85°C Output current: 0.5A Voltage drop: 0.34V Output voltage: 3.3V Tolerance: ±1.5% Input voltage: 2.6...12V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP3335A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5603MNR2G | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V Mounting: SMD Input voltage: 2.85...5.5V Output current: 0.35A Type of integrated circuit: driver Operating temperature: -40...85°C Output voltage: 4.275...4.725V; 4.75...5.25V Case: DFN10 Kind of integrated circuit: LED driver Frequency: 210...320kHz; 0.5...1MHz |
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| NCP1589AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: 0...70°C Output current: 1.5A Operating voltage: 4.5...13.2V DC Type of integrated circuit: PMIC Frequency: 270...330kHz Topology: buck |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP1589BMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: 0...70°C Output current: 1.5A Operating voltage: 4.5...13.2V DC Type of integrated circuit: PMIC Frequency: 540...660kHz Topology: buck |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP1589DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: 0...95°C Output current: 1.5A Operating voltage: 4.5...13.2V DC Type of integrated circuit: PMIC Frequency: 200...500kHz Topology: buck |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP51530BMNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V Mounting: SMD Case: DFN10 Operating temperature: -40...125°C Output current: -3...3.5A Pulse fall time: 15ns Impulse rise time: 15ns Supply voltage: 10...17V DC Voltage class: 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 9A |
auf Bestellung 2132 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2576D2TR4-012G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5927BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
auf Bestellung 5300 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5266BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode Mounting: SMD Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 68V Manufacturer series: MMSZ52xxB |
auf Bestellung 694 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NVMFS5C410NLAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Gate charge: 143nC Drain current: 330A Kind of channel: enhancement Drain-source voltage: 40V Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 820µΩ Pulsed drain current: 900A Power dissipation: 83W |
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| NVMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
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MC14528BDG | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: tube |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC123AMTCX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Manufacturer series: VHC |
auf Bestellung 2090 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC123AMX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Supply voltage: 2...5.5V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C Manufacturer series: VHC |
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MOC3082M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M |
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MOC3082SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3082SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube |
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| MOC3082SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: reel; tape |
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| MOC3082SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
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MOC3082TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
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MOC3082VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
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BCV72 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NRVBB40L45CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Max. load current: 20A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
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| NSS40501UW3T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Case: WDFN3 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of transistor: NPN Frequency: 150MHz Collector current: 5A Collector-emitter voltage: 40V Power dissipation: 1.5W Polarisation: bipolar |
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| NSS40500UW3T2G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Case: WDFN3 Mounting: SMD Kind of package: reel; tape Application: automotive industry Type of transistor: PNP Collector current: 5A Collector-emitter voltage: 40V Power dissipation: 1.5W Polarisation: bipolar |
Produkt ist nicht verfügbar |
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MBRS3100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.62V Kind of package: reel; tape |
auf Bestellung 3315 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4470 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRF2545CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube Mounting: THT Max. forward impulse current: 150A Max. forward voltage: 0.62V Max. off-state voltage: 45V Load current: 12.5A x2 Max. load current: 25A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220FP Type of diode: Schottky rectifying |
auf Bestellung 582 Stücke: Lieferzeit 14-21 Tag (e) |
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SS39 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape Max. forward voltage: 0.85V Max. off-state voltage: 90V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 100A |
auf Bestellung 2634 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54CTT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC70 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Leakage current: 2µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDS2582 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Mounting: SMD Case: SO8 Power dissipation: 2.5W Gate charge: 25nC Polarisation: unipolar Technology: PowerTrench® Drain current: 2.6A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 146mΩ |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS86202 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 64A Pulsed drain current: 240A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS86202ET120 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 72A Pulsed drain current: 538A Power dissipation: 187W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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H11G2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Mounting: THT Number of channels: 1 Collector-emitter voltage: 80V CTR@If: 100%@10mA Insulation voltage: 4.17kV Case: DIP6 Kind of output: Darlington Type of optocoupler: optocoupler |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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MJF45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Case: TO220FP Mounting: THT Collector-emitter voltage: 80V Power dissipation: 50W Polarisation: bipolar Type of transistor: PNP Current gain: 60 Kind of package: tube Frequency: 40MHz Collector current: 10A |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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H11G1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 |
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| H11G2SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Manufacturer series: H11G_ Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 80V CTR@If: 1000%@10mA Insulation voltage: 4.17kV Case: PDIP6 Kind of output: Darlington Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms |
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| MJB45H11G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Power dissipation: 50W Current gain: 60 Collector-emitter voltage: 80V Polarisation: bipolar Case: D2PAK Type of transistor: PNP Kind of package: tube |
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| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Mechanical mounting: screw Technology: SiC Drain current: 149A Drain-source voltage: 900V Electrical mounting: Press-in PCB Gate-source voltage: -8...18V Kind of package: in-tray Semiconductor structure: diode/transistor Case: PIM20 On-state resistance: 10mΩ Topology: NTC thermistor; Vienna Rectifier Pulsed drain current: 447A Type of semiconductor module: MOSFET transistor Power dissipation: 352W |
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| NXH003P120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 350A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM36 On-state resistance: 5.88mΩ Topology: MOSFET half-bridge Pulsed drain current: 700A Type of semiconductor module: MOSFET transistor Power dissipation: 979W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH004P120M3F2PTNG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 338A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM36 On-state resistance: 7.5mΩ Topology: MOSFET half-bridge Pulsed drain current: 676A Type of semiconductor module: MOSFET transistor Power dissipation: 1098W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH003P120M3F2PTNG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 435A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM36 On-state resistance: 5.88mΩ Topology: MOSFET half-bridge Pulsed drain current: 870A Type of semiconductor module: MOSFET transistor Power dissipation: 1482W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 191A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM36 On-state resistance: 14.6mΩ Topology: MOSFET half-bridge Pulsed drain current: 382A Type of semiconductor module: MOSFET transistor Power dissipation: 556W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH004P120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 284A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM36 On-state resistance: 7.5mΩ Topology: MOSFET half-bridge Pulsed drain current: 568A Type of semiconductor module: MOSFET transistor Power dissipation: 785W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 304A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -15...25V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM36 On-state resistance: 7.28mΩ Topology: MOSFET half-bridge Pulsed drain current: 912A Type of semiconductor module: MOSFET transistor Power dissipation: 950W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH007F120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 149A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM34 On-state resistance: 15.9mΩ Topology: H-bridge Pulsed drain current: 447A Type of semiconductor module: MOSFET transistor Power dissipation: 353W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH008T120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 127A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM29 On-state resistance: 15mΩ Topology: 3-level inverter TNPC Pulsed drain current: 387A Type of semiconductor module: MOSFET transistor Power dissipation: 371W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH011F120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 105A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM34 On-state resistance: 21.9mΩ Topology: H-bridge Pulsed drain current: 316A Type of semiconductor module: MOSFET transistor Power dissipation: 244W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH011T120M3F2PTHG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB Mechanical mounting: screw Technology: SiC Drain current: 91A Drain-source voltage: 1.2kV Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor Case: PIM29 On-state resistance: 28.1mΩ Topology: 3-level inverter TNPC Pulsed drain current: 273A Type of semiconductor module: MOSFET transistor Power dissipation: 272W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NXH400N100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42 Mechanical mounting: screw Technology: SiC Application: for UPS; Inverter Max. off-state voltage: 1kV Electrical mounting: Press-Fit Semiconductor structure: SiC diode/transistor Case: PIM42 Gate-emitter voltage: ±20V Collector current: 400A Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MJD3055RLG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NJVMJD3055T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FPF2495CUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Kind of package: reel; tape
Active logical level: high
Case: WLCSP9
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Number of channels: 1
Supply voltage: 2.5...5.5V DC
Output current: 2.2A
Integrated circuit features: thermal protection; undervoltage protection
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Kind of package: reel; tape
Active logical level: high
Case: WLCSP9
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Number of channels: 1
Supply voltage: 2.5...5.5V DC
Output current: 2.2A
Integrated circuit features: thermal protection; undervoltage protection
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FPF2495UCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| DTC144EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC144TET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 120...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 120...300
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC144TM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 120...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 120...300
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N4148TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; reel,tape; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Capacitance: 4pF
Max. forward impulse current: 1A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; reel,tape; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Capacitance: 4pF
Max. forward impulse current: 1A
auf Bestellung 9384 Stücke:
Lieferzeit 14-21 Tag (e)
| NCP3335AMN330R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD
Mounting: SMD
Case: DFN10
Number of channels: 2
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.34V
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.6...12V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP3335A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD
Mounting: SMD
Case: DFN10
Number of channels: 2
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.34V
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.6...12V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP3335A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| NCP5603MNR2G |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V
Mounting: SMD
Input voltage: 2.85...5.5V
Output current: 0.35A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Output voltage: 4.275...4.725V; 4.75...5.25V
Case: DFN10
Kind of integrated circuit: LED driver
Frequency: 210...320kHz; 0.5...1MHz
Category: LED drivers
Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V
Mounting: SMD
Input voltage: 2.85...5.5V
Output current: 0.35A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Output voltage: 4.275...4.725V; 4.75...5.25V
Case: DFN10
Kind of integrated circuit: LED driver
Frequency: 210...320kHz; 0.5...1MHz
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| NCP1589AMNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 270...330kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 270...330kHz
Topology: buck
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP1589BMNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 540...660kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 540...660kHz
Topology: buck
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NCP1589DMNTWG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...95°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 200...500kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...95°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 200...500kHz
Topology: buck
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NCP51530BMNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
auf Bestellung 2132 Stücke:
Lieferzeit 14-21 Tag (e)
| LM2576D2TR4-012G |
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5927BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
auf Bestellung 5300 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5266BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
auf Bestellung 694 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMJS0D9N04CLTWG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NVMFS5C410NLAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 143nC
Drain current: 330A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 820µΩ
Pulsed drain current: 900A
Power dissipation: 83W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 143nC
Drain current: 330A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 820µΩ
Pulsed drain current: 900A
Power dissipation: 83W
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| NVMJS0D9N04CLTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| MC14528BDG |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: tube
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| 74VHC123AMTCX |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Manufacturer series: VHC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Manufacturer series: VHC
auf Bestellung 2090 Stücke:
Lieferzeit 14-21 Tag (e)
| 74VHC123AMX |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Manufacturer series: VHC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Manufacturer series: VHC
Produkt ist nicht verfügbar
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| MOC3082M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3082SR2VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
| MOC3082SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3082SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3082SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3082TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MOC3082VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
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| BCV72 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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Stück im Wert von UAH
| NRVBB40L45CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| NSS40501UW3T2G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Case: WDFN3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of transistor: NPN
Frequency: 150MHz
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Case: WDFN3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of transistor: NPN
Frequency: 150MHz
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSS40500UW3T2G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Case: WDFN3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of transistor: PNP
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Case: WDFN3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Type of transistor: PNP
Collector current: 5A
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRS3100T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
auf Bestellung 3315 Stücke:
Lieferzeit 14-21 Tag (e)
| FDS4470 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRF2545CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220FP
Type of diode: Schottky rectifying
auf Bestellung 582 Stücke:
Lieferzeit 14-21 Tag (e)
| SS39 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Max. forward voltage: 0.85V
Max. off-state voltage: 90V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Max. forward voltage: 0.85V
Max. off-state voltage: 90V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 100A
auf Bestellung 2634 Stücke:
Lieferzeit 14-21 Tag (e)
| SBAT54CTT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| FDS2582 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Gate charge: 25nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 146mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 2.5W
Gate charge: 25nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 2.6A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 146mΩ
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| FDMS86202 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86202ET120 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11G2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| MJF45H11G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 50W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 60
Kind of package: tube
Frequency: 40MHz
Collector current: 10A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 50W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 60
Kind of package: tube
Frequency: 40MHz
Collector current: 10A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
| H11G1SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
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| H11G2SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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| MJB45H11G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
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| NXH020U90MNF2PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Mechanical mounting: screw
Technology: SiC
Drain current: 149A
Drain-source voltage: 900V
Electrical mounting: Press-in PCB
Gate-source voltage: -8...18V
Kind of package: in-tray
Semiconductor structure: diode/transistor
Case: PIM20
On-state resistance: 10mΩ
Topology: NTC thermistor; Vienna Rectifier
Pulsed drain current: 447A
Type of semiconductor module: MOSFET transistor
Power dissipation: 352W
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Mechanical mounting: screw
Technology: SiC
Drain current: 149A
Drain-source voltage: 900V
Electrical mounting: Press-in PCB
Gate-source voltage: -8...18V
Kind of package: in-tray
Semiconductor structure: diode/transistor
Case: PIM20
On-state resistance: 10mΩ
Topology: NTC thermistor; Vienna Rectifier
Pulsed drain current: 447A
Type of semiconductor module: MOSFET transistor
Power dissipation: 352W
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| NXH003P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 350A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 5.88mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 700A
Type of semiconductor module: MOSFET transistor
Power dissipation: 979W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 350A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 5.88mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 700A
Type of semiconductor module: MOSFET transistor
Power dissipation: 979W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH004P120M3F2PTNG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 338A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 676A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1098W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 338A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 676A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1098W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH003P120M3F2PTNG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 435A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 5.88mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 870A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1482W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 435A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 5.88mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 870A
Type of semiconductor module: MOSFET transistor
Power dissipation: 1482W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH006P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 191A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 14.6mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 382A
Type of semiconductor module: MOSFET transistor
Power dissipation: 556W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 191A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 14.6mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 382A
Type of semiconductor module: MOSFET transistor
Power dissipation: 556W
Produkt ist nicht verfügbar
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| NXH004P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 284A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 568A
Type of semiconductor module: MOSFET transistor
Power dissipation: 785W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 284A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 7.5mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 568A
Type of semiconductor module: MOSFET transistor
Power dissipation: 785W
Produkt ist nicht verfügbar
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| NXH006P120MNF2PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 304A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -15...25V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 7.28mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 912A
Type of semiconductor module: MOSFET transistor
Power dissipation: 950W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 304A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -15...25V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM36
On-state resistance: 7.28mΩ
Topology: MOSFET half-bridge
Pulsed drain current: 912A
Type of semiconductor module: MOSFET transistor
Power dissipation: 950W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH007F120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 149A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM34
On-state resistance: 15.9mΩ
Topology: H-bridge
Pulsed drain current: 447A
Type of semiconductor module: MOSFET transistor
Power dissipation: 353W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 149A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM34
On-state resistance: 15.9mΩ
Topology: H-bridge
Pulsed drain current: 447A
Type of semiconductor module: MOSFET transistor
Power dissipation: 353W
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH008T120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 127A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM29
On-state resistance: 15mΩ
Topology: 3-level inverter TNPC
Pulsed drain current: 387A
Type of semiconductor module: MOSFET transistor
Power dissipation: 371W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 127A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM29
On-state resistance: 15mΩ
Topology: 3-level inverter TNPC
Pulsed drain current: 387A
Type of semiconductor module: MOSFET transistor
Power dissipation: 371W
Produkt ist nicht verfügbar
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| NXH011F120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 105A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM34
On-state resistance: 21.9mΩ
Topology: H-bridge
Pulsed drain current: 316A
Type of semiconductor module: MOSFET transistor
Power dissipation: 244W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 105A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM34
On-state resistance: 21.9mΩ
Topology: H-bridge
Pulsed drain current: 316A
Type of semiconductor module: MOSFET transistor
Power dissipation: 244W
Produkt ist nicht verfügbar
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| NXH011T120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 91A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM29
On-state resistance: 28.1mΩ
Topology: 3-level inverter TNPC
Pulsed drain current: 273A
Type of semiconductor module: MOSFET transistor
Power dissipation: 272W
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Mechanical mounting: screw
Technology: SiC
Drain current: 91A
Drain-source voltage: 1.2kV
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
Case: PIM29
On-state resistance: 28.1mΩ
Topology: 3-level inverter TNPC
Pulsed drain current: 273A
Type of semiconductor module: MOSFET transistor
Power dissipation: 272W
Produkt ist nicht verfügbar
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| NXH400N100H4Q2F2PG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Mechanical mounting: screw
Technology: SiC
Application: for UPS; Inverter
Max. off-state voltage: 1kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Case: PIM42
Gate-emitter voltage: ±20V
Collector current: 400A
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Mechanical mounting: screw
Technology: SiC
Application: for UPS; Inverter
Max. off-state voltage: 1kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Case: PIM42
Gate-emitter voltage: ±20V
Collector current: 400A
Type of semiconductor module: IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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