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MC74ACT86DG MC74ACT86DG ONSEMI mc74ac86-d.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Quiescent current: 40µA
Number of inputs: 2
Kind of gate: XOR
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
8+8.94 EUR
Mindestbestellmenge: 8
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2SB815-7-TB-E 2SB815-7-TB-E ONSEMI EN694-D.html Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 300...600
Collector current: 0.7A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Produkt ist nicht verfügbar
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NCP81080DR2G NCP81080DR2G ONSEMI ncp81080-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 19ns
Pulse fall time: 17ns
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
51+1.42 EUR
64+1.12 EUR
68+1.06 EUR
500+1.04 EUR
Mindestbestellmenge: 46
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SS12 SS12 ONSEMI SSxx.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 6783 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
246+0.29 EUR
305+0.23 EUR
348+0.21 EUR
376+0.19 EUR
Mindestbestellmenge: 193
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BSS123 BSS123 ONSEMI BSS123-FAI.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 16267 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
253+0.28 EUR
368+0.19 EUR
444+0.16 EUR
1421+0.05 EUR
1502+0.05 EUR
Mindestbestellmenge: 200
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BSS123W BSS123W ONSEMI bss123w-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.20 EUR
530+0.14 EUR
600+0.12 EUR
670+0.11 EUR
710+0.10 EUR
Mindestbestellmenge: 360
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1N5408G 1N5408G ONSEMI 1N540x.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Leakage current: 50µA
Kind of package: bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO27
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
157+0.46 EUR
223+0.32 EUR
323+0.22 EUR
396+0.19 EUR
Mindestbestellmenge: 157
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MOC3022M MOC3022M ONSEMI MOC3020M-ONS.PDF Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
94+0.76 EUR
158+0.45 EUR
162+0.44 EUR
167+0.43 EUR
Mindestbestellmenge: 66
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MC74VHC1G08DTT1G
+1
 		MC74VHC1G08DTT1G ONSEMI M74VHC1GT08.PDF MC74VHC1G08DFT1G.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of gate: AND
Number of inputs: 2
Family: VHC
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)
345+0.21 EUR
395+0.18 EUR
540+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 345
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FDMS86350ET80 ONSEMI fdms86350et80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SBAS16HT3G SBAS16HT3G ONSEMI bas16ht1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TIP101G TIP101G ONSEMI TIP100G.PDF Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.54 EUR
65+1.10 EUR
Mindestbestellmenge: 47
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1N5407G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Produkt ist nicht verfügbar
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NRVTSM260EV2T1G ONSEMI nrvts2h60esf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
Produkt ist nicht verfügbar
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NRVTSM260EV2T3G ONSEMI NRVTS2H60ESF-D.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
Produkt ist nicht verfügbar
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ESD9R3.3ST5G ESD9R3.3ST5G ONSEMI ESD9R3.3ST5G-DTE.PDF Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Leakage current: 1nA
Version: ESD
auf Bestellung 8450 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
129+0.56 EUR
198+0.36 EUR
210+0.34 EUR
1000+0.33 EUR
Mindestbestellmenge: 93
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BAV102 BAV102 ONSEMI BAV102.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Max. off-state voltage: 150V
Max. load current: 0.6A
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Case: SOD80
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
Mindestbestellmenge: 105
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MOC3032M MOC3032M ONSEMI MOC3032M.pdf Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Slew rate: 2kV/μs
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.20 EUR
91+0.79 EUR
117+0.61 EUR
124+0.58 EUR
500+0.56 EUR
Mindestbestellmenge: 60
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ESD9B3.3ST5G ESD9B3.3ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.3W
Leakage current: 0.1µA
Version: ESD
Capacitance: 15pF
auf Bestellung 19223 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
596+0.12 EUR
916+0.08 EUR
1092+0.07 EUR
1583+0.05 EUR
1737+0.04 EUR
Mindestbestellmenge: 385
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SBC857BDW1T1G SBC857BDW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
556+0.13 EUR
598+0.12 EUR
Mindestbestellmenge: 334
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NCP451AFCT2G ONSEMI ncp451-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Supply voltage: 0.75...5.5V DC
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP6
On-state resistance: 35mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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NCP451FCT2G ONSEMI ncp451-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Output current: 3A
Number of channels: 1
On-state resistance: 35mΩ
Kind of integrated circuit: high-side
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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1N4148WT 1N4148WT ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CF5D2C58BD1C0C7&compId=1N4x48WT_1N914BWT.pdf?ci_sign=918f2e5563636965a31690a3c285564c0a7c6645 Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Max. load current: 0.2A
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 4139 Stücke:
Lieferzeit 14-21 Tag (e)
586+0.12 EUR
820+0.09 EUR
1107+0.07 EUR
1279+0.06 EUR
1446+0.05 EUR
2605+0.03 EUR
2748+0.03 EUR
Mindestbestellmenge: 586
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BAT54XV2T1G BAT54XV2T1G ONSEMI bat54xv2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
auf Bestellung 12827 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
556+0.13 EUR
695+0.10 EUR
1147+0.06 EUR
1386+0.05 EUR
1731+0.04 EUR
1832+0.04 EUR
Mindestbestellmenge: 385
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SBAT54XV2T1G SBAT54XV2T1G ONSEMI bat54xv2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 10pF
Max. load current: 0.3A
Max. forward voltage: 0.8V
Reverse recovery time: 5ns
Leakage current: 2µA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
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MMSZ5239BT1G MMSZ5239BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 9.1V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
auf Bestellung 2657 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
676+0.11 EUR
1137+0.06 EUR
1226+0.06 EUR
2591+0.03 EUR
2657+0.03 EUR
Mindestbestellmenge: 500
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NVTR4503NT1G NVTR4503NT1G ONSEMI NTR4503N_NVTR4503N.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
163+0.44 EUR
293+0.24 EUR
385+0.19 EUR
Mindestbestellmenge: 163
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FDMS86182 ONSEMI fdms86182-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FXMAR2102UMX FXMAR2102UMX ONSEMI FXMAR2102L8X.pdf Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.65...5.5V DC
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 4696 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
61+1.17 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 57
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BC639 BC639 ONSEMI pVersion=0046&contRep=ZT&docId=E1C047158725FCF1A6F5005056AB5A8F&compId=BC635-D.pdf?ci_sign=5bd2a80bec6bfb3156dbca6dcba4a8cf31316960 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Produkt ist nicht verfügbar
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J310 J310 ONSEMI J309%2C310%2CMMBFJ309%2C310.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Produkt ist nicht verfügbar
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SS8550 SS8550 ONSEMI pVersion=0046&contRep=ZT&docId=E20E0E4A562614F1A303005056AB0C4F&compId=SS8550.pdf?ci_sign=72efd3a2c367b0397f18e4637a361b467c160ee7 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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TIP41C-TU TIP41C-TU ONSEMI TIP41A.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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MJE15030 MJE15030 ONSEMI MJE15030.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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MPSA92G MPSA92G ONSEMI mpsa92-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Produkt ist nicht verfügbar
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2N5401G 2N5401G ONSEMI 7553200.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
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SS8050C SS8050C ONSEMI SS8050.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
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BC550CG BC550CG ONSEMI Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Produkt ist nicht verfügbar
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MMBZ20VALT1G MMBZ20VALT1G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 17V
Tolerance: ±5%
Type of diode: TVS array
Version: ESD
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Leakage current: 50nA
Max. forward impulse current: 1.4A
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
758+0.09 EUR
977+0.07 EUR
1080+0.07 EUR
1500+0.05 EUR
Mindestbestellmenge: 313
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LF353N LF353N ONSEMI LF353N.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Produkt ist nicht verfügbar
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HCPL2631 HCPL2631 ONSEMI HCPL2631.pdf Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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SS25 ONSEMI S210.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
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SS25FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74ACT74DR2G MC74ACT74DR2G ONSEMI mc74ac74-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
auf Bestellung 1962 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
166+0.43 EUR
211+0.34 EUR
302+0.24 EUR
319+0.22 EUR
Mindestbestellmenge: 100
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SBC847BWT1G SBC847BWT1G ONSEMI BC84x.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 160 Stücke:
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160+0.44 EUR
Mindestbestellmenge: 160
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BC549CG BC549CG ONSEMI bc550c-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Produkt ist nicht verfügbar
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FQP32N20C FQP32N20C ONSEMI FQP32N20C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; 156W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC560CG BC560CG ONSEMI bc560c-d.pdf description Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
Produkt ist nicht verfügbar
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MPSA06G MPSA06G ONSEMI pzta06-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Produkt ist nicht verfügbar
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MPSA42G MPSA42G ONSEMI mpsa42-d.pdf description Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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BC368 BC368 ONSEMI BC368%2C369%20Rev5.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 65MHz
Power: 0.8W
Produkt ist nicht verfügbar
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LM285Z-2.5RAG ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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MMBD6050LT1G MMBD6050LT1G ONSEMI mmbd6050lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Power dissipation: 0.4W
Reverse recovery time: 50ns
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
616+0.12 EUR
1042+0.07 EUR
1437+0.05 EUR
1667+0.04 EUR
2400+0.03 EUR
Mindestbestellmenge: 616
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LM358ADR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 75nA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Produkt ist nicht verfügbar
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MOC3021M MOC3021M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C150D1DDE800C7&compId=MOC3020M-ONS.PDF?ci_sign=389ef2e64224fc06bef592ec96121394b0062cba Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
125+0.57 EUR
146+0.49 EUR
169+0.42 EUR
179+0.40 EUR
182+0.39 EUR
Mindestbestellmenge: 82
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KSD882YSTU ONSEMI KSD882.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 90MHz
Produkt ist nicht verfügbar
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FDS4480 FDS4480 ONSEMI fds4480-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2385 Stücke:
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59+1.23 EUR
66+1.09 EUR
87+0.83 EUR
91+0.79 EUR
500+0.78 EUR
Mindestbestellmenge: 59
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1N914TR 1N914TR ONSEMI 1n914.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 4pF
auf Bestellung 5834 Stücke:
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585+0.12 EUR
1429+0.05 EUR
1902+0.04 EUR
2440+0.03 EUR
2778+0.03 EUR
5209+0.01 EUR
5495+0.01 EUR
Mindestbestellmenge: 585
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MC74VHC1G01DFT1G
+1
 		MC74VHC1G01DFT1G ONSEMI mc74vhc1g01-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
auf Bestellung 2432 Stücke:
Lieferzeit 14-21 Tag (e)
658+0.11 EUR
767+0.09 EUR
957+0.08 EUR
1306+0.06 EUR
1382+0.05 EUR
Mindestbestellmenge: 658
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MC74VHC1G04DFT2G
+1
 		MC74VHC1G04DFT2G ONSEMI mc74vhc1g04-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of gate: NOT
Number of inputs: 1
Family: VHC
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.30 EUR
343+0.21 EUR
421+0.17 EUR
684+0.10 EUR
832+0.09 EUR
1208+0.06 EUR
1276+0.06 EUR
Mindestbestellmenge: 239
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MC74ACT86DG mc74ac86-d.pdf
MC74ACT86DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Quiescent current: 40µA
Number of inputs: 2
Kind of gate: XOR
auf Bestellung 8 Stücke:
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Anzahl Preis
8+8.94 EUR
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2SB815-7-TB-E EN694-D.html
2SB815-7-TB-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 15V
Current gain: 300...600
Collector current: 0.7A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Produkt ist nicht verfügbar
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NCP81080DR2G ncp81080-d.pdf
NCP81080DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -800...500mA
Supply voltage: 5.5...20V DC
Mounting: SMD
Operating temperature: -40...140°C
Impulse rise time: 19ns
Pulse fall time: 17ns
auf Bestellung 769 Stücke:
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Anzahl Preis
46+1.57 EUR
51+1.42 EUR
64+1.12 EUR
68+1.06 EUR
500+1.04 EUR
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SS12 SSxx.pdf
SS12
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; reel,tape; 1.1W
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Power dissipation: 1.1W
auf Bestellung 6783 Stücke:
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Anzahl Preis
193+0.37 EUR
246+0.29 EUR
305+0.23 EUR
348+0.21 EUR
376+0.19 EUR
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BSS123 BSS123-FAI.pdf
BSS123
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 2.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 16267 Stücke:
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Anzahl Preis
200+0.36 EUR
253+0.28 EUR
368+0.19 EUR
444+0.16 EUR
1421+0.05 EUR
1502+0.05 EUR
Mindestbestellmenge: 200
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BSS123W bss123w-d.pdf
BSS123W
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Power dissipation: 0.2W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.68A
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
360+0.20 EUR
530+0.14 EUR
600+0.12 EUR
670+0.11 EUR
710+0.10 EUR
Mindestbestellmenge: 360
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1N5408G 1N540x.PDF
1N5408G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Leakage current: 50µA
Kind of package: bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO27
Max. forward voltage: 1V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
auf Bestellung 396 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
223+0.32 EUR
323+0.22 EUR
396+0.19 EUR
Mindestbestellmenge: 157
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MOC3022M MOC3020M-ONS.PDF
MOC3022M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
94+0.76 EUR
158+0.45 EUR
162+0.44 EUR
167+0.43 EUR
Mindestbestellmenge: 66
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MC74VHC1G08DTT1G M74VHC1GT08.PDF MC74VHC1G08DFT1G.pdf
MC74VHC1G08DTT1G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of gate: AND
Number of inputs: 2
Family: VHC
auf Bestellung 3145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
345+0.21 EUR
395+0.18 EUR
540+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 345
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FDMS86350ET80 fdms86350et80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SBAS16HT3G bas16ht1-d.pdf
SBAS16HT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 36A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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TIP101G TIP100G.PDF
TIP101G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 2W
Case: TO220AB
Current gain: 20000
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.54 EUR
65+1.10 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
1N5407G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB8749461F840D6&compId=1N540x.PDF?ci_sign=edfd626bae2e7653ac1fbc632df6258f6bde519c
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; bulk; Ifsm: 200A; DO27; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Produkt ist nicht verfügbar
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NRVTSM260EV2T1G nrvts2h60esf-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVTSM260EV2T3G NRVTS2H60ESF-D.PDF
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 60V; 2A; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. load current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESD9R3.3ST5G ESD9R3.3ST5G-DTE.PDF
ESD9R3.3ST5G
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Semiconductor structure: unidirectional
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.15W
Max. forward impulse current: 1A
Leakage current: 1nA
Version: ESD
auf Bestellung 8450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
129+0.56 EUR
198+0.36 EUR
210+0.34 EUR
1000+0.33 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
BAV102 BAV102.pdf
BAV102
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 150V; 0.5A; 50ns; SOD80; Ufmax: 1.25V; Ifsm: 4A
Mounting: SMD
Capacitance: 5pF
Max. off-state voltage: 150V
Max. load current: 0.6A
Max. forward voltage: 1.25V
Load current: 0.5A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 4A
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: switching
Case: SOD80
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
MOC3032M MOC3032M.pdf
MOC3032M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 7.5kV; triac; DIP6; Ch: 1; MOC303XM; 2kV/μs
Type of optocoupler: optotriac
Insulation voltage: 7.5kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC303XM
Slew rate: 2kV/μs
auf Bestellung 712 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.20 EUR
91+0.79 EUR
117+0.61 EUR
124+0.58 EUR
500+0.56 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
ESD9B3.3ST5G esd9b-d.pdf
ESD9B3.3ST5G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.3W
Leakage current: 0.1µA
Version: ESD
Capacitance: 15pF
auf Bestellung 19223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
596+0.12 EUR
916+0.08 EUR
1092+0.07 EUR
1583+0.05 EUR
1737+0.04 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
SBC857BDW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15
SBC857BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
556+0.13 EUR
598+0.12 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
NCP451AFCT2G ncp451-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Supply voltage: 0.75...5.5V DC
Kind of integrated circuit: high-side
Kind of package: reel; tape
Mounting: SMD
Case: WLCSP6
On-state resistance: 35mΩ
Output current: 3A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP451FCT2G ncp451-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Kind of output: N-Channel
Active logical level: high
Output current: 3A
Number of channels: 1
On-state resistance: 35mΩ
Kind of integrated circuit: high-side
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4148WT pVersion=0046&contRep=ZT&docId=005056AB90B41EDB8CF5D2C58BD1C0C7&compId=1N4x48WT_1N914BWT.pdf?ci_sign=918f2e5563636965a31690a3c285564c0a7c6645
1N4148WT
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.1A; 4ns; SOD523F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD523F
Max. forward voltage: 1V
Max. load current: 0.2A
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 4139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
586+0.12 EUR
820+0.09 EUR
1107+0.07 EUR
1279+0.06 EUR
1446+0.05 EUR
2605+0.03 EUR
2748+0.03 EUR
Mindestbestellmenge: 586
Im Einkaufswagen  Stück im Wert von  UAH
BAT54XV2T1G bat54xv2t1-d.pdf
BAT54XV2T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
auf Bestellung 12827 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
556+0.13 EUR
695+0.10 EUR
1147+0.06 EUR
1386+0.05 EUR
1731+0.04 EUR
1832+0.04 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54XV2T1G bat54xv2t1-d.pdf
SBAT54XV2T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 10pF
Max. load current: 0.3A
Max. forward voltage: 0.8V
Reverse recovery time: 5ns
Leakage current: 2µA
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5239BT1G MMSZ52xxT1G.PDF
MMSZ5239BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 9.1V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
auf Bestellung 2657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
676+0.11 EUR
1137+0.06 EUR
1226+0.06 EUR
2591+0.03 EUR
2657+0.03 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
NVTR4503NT1G NTR4503N_NVTR4503N.pdf
NVTR4503NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.5A; 0.73W; SOT23
Case: SOT23
Drain-source voltage: 30V
Drain current: 1.5A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Power dissipation: 0.73W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
163+0.44 EUR
293+0.24 EUR
385+0.19 EUR
Mindestbestellmenge: 163
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86182 fdms86182-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 364A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 364A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 19.5mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FXMAR2102UMX FXMAR2102L8X.pdf
FXMAR2102UMX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MLP8; -40÷85°C; reel,tape; IN: 2
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Case: MLP8
Number of inputs: 2
Number of outputs: 2
Supply voltage: 1.65...5.5V DC
Frequency: 50MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 4696 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
61+1.17 EUR
77+0.93 EUR
82+0.87 EUR
Mindestbestellmenge: 57
Im Einkaufswagen  Stück im Wert von  UAH
BC639 pVersion=0046&contRep=ZT&docId=E1C047158725FCF1A6F5005056AB5A8F&compId=BC635-D.pdf?ci_sign=5bd2a80bec6bfb3156dbca6dcba4a8cf31316960
BC639
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 100MHz
Power: 0.8W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
J310 J309%2C310%2CMMBFJ309%2C310.pdf
J310
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 350mW; TO92
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Case: TO92
Mounting: THT
Power: 0.35W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS8550 pVersion=0046&contRep=ZT&docId=E20E0E4A562614F1A303005056AB0C4F&compId=SS8550.pdf?ci_sign=72efd3a2c367b0397f18e4637a361b467c160ee7
SS8550
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP41C-TU TIP41A.pdf
TIP41C-TU
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE15030 MJE15030.PDF
MJE15030
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Produkt ist nicht verfügbar
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MPSA92G description mpsa92-d.pdf
MPSA92G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Produkt ist nicht verfügbar
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2N5401G 7553200.pdf
2N5401G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS8050C SS8050.pdf
SS8050C
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 1.5A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC550CG
BC550CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Produkt ist nicht verfügbar
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MMBZ20VALT1G MMBZ_ser.PDF
MMBZ20VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; ±5%
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 17V
Tolerance: ±5%
Type of diode: TVS array
Version: ESD
Breakdown voltage: 20V
Peak pulse power dissipation: 40W
Leakage current: 50nA
Max. forward impulse current: 1.4A
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
758+0.09 EUR
977+0.07 EUR
1080+0.07 EUR
1500+0.05 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
LF353N LF353N.pdf
LF353N
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 16V/μs
Operating temperature: 0...70°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2631 HCPL2631.pdf
HCPL2631
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS25 S210.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS25FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT74DR2G mc74ac74-d.pdf
MC74ACT74DR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; ACT; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Manufacturer series: ACT
auf Bestellung 1962 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
166+0.43 EUR
211+0.34 EUR
302+0.24 EUR
319+0.22 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
SBC847BWT1G BC84x.pdf
SBC847BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+0.44 EUR
Mindestbestellmenge: 160
Im Einkaufswagen  Stück im Wert von  UAH
BC549CG bc550c-d.pdf
BC549CG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 500mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 300MHz
Power: 0.5W
Produkt ist nicht verfügbar
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FQP32N20C FQP32N20C.pdf
FQP32N20C
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17.8A; 156W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17.8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BC560CG description bc560c-d.pdf
BC560CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 500mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: TO92
Mounting: THT
Frequency: 150MHz
Power: 0.5W
Produkt ist nicht verfügbar
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MPSA06G pzta06-d.pdf
MPSA06G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Case: TO92
Mounting: THT
Power dissipation: 0.625W
Produkt ist nicht verfügbar
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MPSA42G description mpsa42-d.pdf
MPSA42G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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BC368 BC368%2C369%20Rev5.pdf
BC368
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 1A; 800mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1A
Case: TO92
Mounting: THT
Frequency: 65MHz
Power: 0.8W
Produkt ist nicht verfügbar
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LM285Z-2.5RAG LM285_LM385B.PDF
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Produkt ist nicht verfügbar
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MMBD6050LT1G mmbd6050lt1-d.pdf
MMBD6050LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Power dissipation: 0.4W
Reverse recovery time: 50ns
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
616+0.12 EUR
1042+0.07 EUR
1437+0.05 EUR
1667+0.04 EUR
2400+0.03 EUR
Mindestbestellmenge: 616
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LM358ADR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 75nA
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Mounting: SMT
Operating temperature: 0...70°C
Case: SO8
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 1.1MHz
Produkt ist nicht verfügbar
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MOC3021M pVersion=0046&contRep=ZT&docId=005056AB90B41EDB84C150D1DDE800C7&compId=MOC3020M-ONS.PDF?ci_sign=389ef2e64224fc06bef592ec96121394b0062cba
MOC3021M
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; without zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Mounting: THT
Manufacturer series: MOC302XM
auf Bestellung 657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
125+0.57 EUR
146+0.49 EUR
169+0.42 EUR
179+0.40 EUR
182+0.39 EUR
Mindestbestellmenge: 82
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KSD882YSTU KSD882.pdf
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 30V; 3A; 1W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 3A
Power dissipation: 1W
Case: TO126ISO
Current gain: 160...320
Mounting: THT
Kind of package: tube
Frequency: 90MHz
Produkt ist nicht verfügbar
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FDS4480 fds4480-d.pdf
FDS4480
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10.8A
Pulsed drain current: 45A
Power dissipation: 2.5W
Case: SO8
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
66+1.09 EUR
87+0.83 EUR
91+0.79 EUR
500+0.78 EUR
Mindestbestellmenge: 59
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1N914TR 1n914.pdf
1N914TR
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Leakage current: 50µA
Capacitance: 4pF
auf Bestellung 5834 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1429+0.05 EUR
1902+0.04 EUR
2440+0.03 EUR
2778+0.03 EUR
5209+0.01 EUR
5495+0.01 EUR
Mindestbestellmenge: 585
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MC74VHC1G01DFT1G mc74vhc1g01-d.pdf
MC74VHC1G01DFT1G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Quiescent current: 40µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
auf Bestellung 2432 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
658+0.11 EUR
767+0.09 EUR
957+0.08 EUR
1306+0.06 EUR
1382+0.05 EUR
Mindestbestellmenge: 658
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MC74VHC1G04DFT2G mc74vhc1g04-d.pdf
MC74VHC1G04DFT2G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of gate: NOT
Number of inputs: 1
Family: VHC
auf Bestellung 2107 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
343+0.21 EUR
421+0.17 EUR
684+0.10 EUR
832+0.09 EUR
1208+0.06 EUR
1276+0.06 EUR
Mindestbestellmenge: 239
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