| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NCP51810AMNTWG | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: QFN15 Output current: -2...1A Supply voltage: 9...17V DC Mounting: SMD Operating temperature: -40...125°C Technology: GaN |
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| NSVIMD10AMT1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Power dissipation: 285mW Kind of transistor: BRT; complementary pair Case: SC74R Type of transistor: NPN / PNP Mounting: SMD Collector current: 0.1A Collector-emitter voltage: 50V Current gain: 68...600 Quantity in set/package: 3000pcs. Base-emitter resistor: 10kΩ Base resistor: 13/0.13kΩ Kind of package: reel; tape Application: automotive industry Polarisation: bipolar |
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RS1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
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RS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
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| UJ3D1250K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 134W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1200V Max. forward impulse current: 275A Power dissipation: 134W Kind of package: tube |
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| UJ3D1202TS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 5.5W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 2A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1200V Max. forward impulse current: 27A Power dissipation: 5.5W Kind of package: tube |
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| UJ3D1205TS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 13W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1200V Max. forward impulse current: 63A Power dissipation: 13W Kind of package: tube |
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| UJ3D1210K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 110A Kind of package: tube |
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| UJ3D1210KS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; 26.6W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 110A Power dissipation: 26.6W Kind of package: tube |
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| UJ3D1210KSD | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 5A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 63A Power dissipation: 13W Kind of package: tube |
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| UJ3D1210TS | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 26.5W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1200V Max. forward impulse current: 110A Power dissipation: 26.5W Kind of package: tube |
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| UJ3D1220K2 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 55W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Case: TO247-2 Max. forward voltage: 1200V Max. forward impulse current: 180A Power dissipation: 55W Kind of package: tube |
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| UJ3D1250K | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; 134W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1200V Max. forward impulse current: 275A Power dissipation: 134W Kind of package: tube |
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1N5373BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 68V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
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| 1N5373BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 68V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
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| SZ1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
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1N5366BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 39V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 39V Mounting: THT Tolerance: ±5% Case: CASE017AA Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
auf Bestellung 1084 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1N5366BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 39V Mounting: THT Tolerance: ±5% Case: CASE017AA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1N53xxB |
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| MC33064D-5R2G | ONSEMI |
 Category: Supervisor circuitsDescription: IC: supervisor circuit; open drain; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Number of channels: 1 Kind of RESET output: open drain Supply voltage: 6.5V Active logical level: low Threshold on-voltage: 4.61V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Current gain: 60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 780 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN5211T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NSVMUN5211DW1T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. Application: automotive industry |
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NC7SU04M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SOT23-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 1µA |
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MM3Z3V0ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
auf Bestellung 810 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5225BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 3V Type of diode: Zener Tolerance: ±5% |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ4683T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 3V Type of diode: Zener Tolerance: ±5% |
auf Bestellung 2835 Stücke: Lieferzeit 14-21 Tag (e) |
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| MM5Z3V0T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MM5Z |
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| SZMM5Z3V0T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: reel; tape Case: SOD523F Mounting: SMD Tolerance: ±7% Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
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| NSBC115EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...150 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ |
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S3MB | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.15V Kind of package: reel; tape Reverse recovery time: 1.5µs |
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| EFC4627R-TR | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Technology: PowerTrench® Gate charge: 13.4nC Power dissipation: 1.4W Drain current: 6A Gate-source voltage: 10V Drain-source voltage: 12V Polarisation: N Case: SMD4 |
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| HUF76639S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 180W Case: TO263AB Gate-source voltage: ±16V On-state resistance: 26mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MUN5133DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NSVMUN5133DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
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| FT7522L6X | ONSEMI |
Category: Counters/dividers Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6 Supply voltage: 1.65...5V Active logical level: low Type of integrated circuit: supervisor circuit Operating temperature: -40...85°C Case: MicroPak6 Kind of integrated circuit: voltage detector Kind of RESET output: open drain Mounting: SMD |
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LM258N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8 Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: THT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: DIP8 Operating temperature: -40...105°C Slew rate: 0.6V/μs |
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FDP2572 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 20A Power dissipation: 135W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP2552 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
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| NCV2003SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SOT23-5 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
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| NCV20032DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: SO8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
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| NCS20282FCTTAG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: WLCSP9 Operating temperature: -40...125°C Integrated circuit features: rail-to-rail Kind of package: reel; tape Input bias current: 800pA Input offset current: 10pA Input offset voltage: 1.5mV Slew rate: 5V/μs |
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| NCV20032DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 7MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.7...5.5V DC Case: Micro8 Operating temperature: -40...125°C Integrated circuit features: low voltage; rail-to-rail output Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Slew rate: 8V/μs |
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MBRS130T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
auf Bestellung 1963 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.6V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD8480 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V Type of optocoupler: optocoupler Mounting: SMD Case: SOP6 Output voltage: -0.5...35V Turn-off time: 10ns Turn-on time: 15ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Manufacturer series: FOD848x Slew rate: 40kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| EMX1DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape |
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| NSVEMX1DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| 74LVT245WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Technology: BiCMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2.7...3.6V DC |
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| 1SMB5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxB Semiconductor structure: single diode |
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 |
1SMA5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Semiconductor structure: single diode |
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| SZ1SMB5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Type of diode: Zener Power dissipation: 3W Zener voltage: 43V Manufacturer series: 1SMB59xxB Application: automotive industry Semiconductor structure: single diode |
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| SZ1SMA5940BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 43V Manufacturer series: 1SMA59xxBT3G Application: automotive industry Semiconductor structure: single diode |
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| HGTD1N120BNS9A | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 2.7A Power dissipation: 60W Case: DPAK Gate-emitter voltage: ±20V Pulsed collector current: 6A Mounting: SMD Gate charge: 21nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
MMBFJ175 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 7mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: 30V On-state resistance: 125Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
2SK932-24-TB-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 14.5mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA Drain-source voltage: 15V |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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|
|
2SK932-23-TB-E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 15V Drain current: 10mA Power dissipation: 0.2W Case: SOT23 Gate-source voltage: -15V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
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| FSA2275UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape Operating temperature: -40...85°C Supply voltage: 2.5...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT x2 Kind of package: reel; tape Case: UMLP12 Number of channels: 2 Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FSA2259UMX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL Mounting: SMD Case: UMLP10 Operating temperature: -40...85°C Kind of output: SPDT x2 Supply voltage: 1.65...4.4V DC Number of channels: 2 Type of integrated circuit: analog switch Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCP51810AMNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Technology: GaN
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Technology: GaN
Produkt ist nicht verfügbar
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| NSVIMD10AMT1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Power dissipation: 285mW
Kind of transistor: BRT; complementary pair
Case: SC74R
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 68...600
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Base resistor: 13/0.13kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Power dissipation: 285mW
Kind of transistor: BRT; complementary pair
Case: SC74R
Type of transistor: NPN / PNP
Mounting: SMD
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 68...600
Quantity in set/package: 3000pcs.
Base-emitter resistor: 10kΩ
Base resistor: 13/0.13kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| RS1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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| RS1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| UJ3D1250K2 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-2; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
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| UJ3D1202TS |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 5.5W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 27A
Power dissipation: 5.5W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; TO220-2; 5.5W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 27A
Power dissipation: 5.5W
Kind of package: tube
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| UJ3D1205TS |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 63A
Power dissipation: 13W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 63A
Power dissipation: 13W
Kind of package: tube
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| UJ3D1210K2 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Kind of package: tube
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| UJ3D1210KS |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; 26.6W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.6W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-3; 26.6W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.6W
Kind of package: tube
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| UJ3D1210KSD |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 63A
Power dissipation: 13W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 63A
Power dissipation: 13W
Kind of package: tube
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| UJ3D1210TS |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 26.5W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.5W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220-2; 26.5W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1200V
Max. forward impulse current: 110A
Power dissipation: 26.5W
Kind of package: tube
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| UJ3D1220K2 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 55W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 180A
Power dissipation: 55W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; 55W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1200V
Max. forward impulse current: 180A
Power dissipation: 55W
Kind of package: tube
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| UJ3D1250K |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; 134W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1200V
Max. forward impulse current: 275A
Power dissipation: 134W
Kind of package: tube
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| 1N5373BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| 1N5373BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 68V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 68V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| SZ1SMB5913BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| 1N5366BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)
| 1N5366BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 39V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 39V
Mounting: THT
Tolerance: ±5%
Case: CASE017AA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
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| MC33064D-5R2G |
|
Hersteller: ONSEMI
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of channels: 1
Kind of RESET output: open drain
Supply voltage: 6.5V
Active logical level: low
Threshold on-voltage: 4.61V
Category: Supervisor circuits
Description: IC: supervisor circuit; open drain; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Number of channels: 1
Kind of RESET output: open drain
Supply voltage: 6.5V
Active logical level: low
Threshold on-voltage: 4.61V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MUN5211T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 780 Stücke:
Lieferzeit 14-21 Tag (e)
| SMUN5211T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| SMUN5211T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| NSVMUN5211DW1T2G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NC7SU04M5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 1µA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 1uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 1µA
Produkt ist nicht verfügbar
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| MM3Z3V0ST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 810 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5225BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 1785 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ4683T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
| SZMMSZ4683T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD123; single diode; reel,tape
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 3V
Type of diode: Zener
Tolerance: ±5%
auf Bestellung 2835 Stücke:
Lieferzeit 14-21 Tag (e)
| MM5Z3V0T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MM5Z
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMM5Z3V0T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: reel; tape
Case: SOD523F
Mounting: SMD
Tolerance: ±7%
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Produkt ist nicht verfügbar
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| NSBC115EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| S3MB |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMB; Ufmax: 1.15V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.15V
Kind of package: reel; tape
Reverse recovery time: 1.5µs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| EFC4627R-TR |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Gate charge: 13.4nC
Power dissipation: 1.4W
Drain current: 6A
Gate-source voltage: 10V
Drain-source voltage: 12V
Polarisation: N
Case: SMD4
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; N; 12V; 6A; 1.4W; SMD4
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Gate charge: 13.4nC
Power dissipation: 1.4W
Drain current: 6A
Gate-source voltage: 10V
Drain-source voltage: 12V
Polarisation: N
Case: SMD4
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| HUF76639S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 180W
Case: TO263AB
Gate-source voltage: ±16V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 180W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 180W
Case: TO263AB
Gate-source voltage: ±16V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUN5133DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NSVMUN5133DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 4.7kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FT7522L6X |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6
Supply voltage: 1.65...5V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Case: MicroPak6
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Mounting: SMD
Category: Counters/dividers
Description: IC: supervisor circuit; voltage detector; open drain; MicroPak6
Supply voltage: 1.65...5V
Active logical level: low
Type of integrated circuit: supervisor circuit
Operating temperature: -40...85°C
Case: MicroPak6
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Mounting: SMD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LM258N |
|
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: -40...105°C
Slew rate: 0.6V/μs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDP2572 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 20A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 20A
Power dissipation: 135W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| FDP2552 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCV2003SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCV20032DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Produkt ist nicht verfügbar
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| NCS20282FCTTAG |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: WLCSP9
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Slew rate: 5V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 2.5÷5.5VDC; WLCSP9; 1.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: WLCSP9
Operating temperature: -40...125°C
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Slew rate: 5V/μs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCV20032DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.7...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Integrated circuit features: low voltage; rail-to-rail output
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Slew rate: 8V/μs
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| MBRS130T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
auf Bestellung 1963 Stücke:
Lieferzeit 14-21 Tag (e)
| MBRS120T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| FOD8480 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP6
Output voltage: -0.5...35V
Turn-off time: 10ns
Turn-on time: 15ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Manufacturer series: FOD848x
Slew rate: 40kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SOP6; 40kV/μs; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: SMD
Case: SOP6
Output voltage: -0.5...35V
Turn-off time: 10ns
Turn-on time: 15ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Manufacturer series: FOD848x
Slew rate: 40kV/μs
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| EMX1DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
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| NSVEMX1DXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| 74LVT245WMX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: BiCMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; BiCMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Technology: BiCMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...3.6V DC
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| 1SMB5940BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Semiconductor structure: single diode
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| 1SMA5940BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Semiconductor structure: single diode
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| SZ1SMB5940BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Manufacturer series: 1SMB59xxB
Application: automotive industry
Semiconductor structure: single diode
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| SZ1SMA5940BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 43V; SMD; SMA; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 43V
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Semiconductor structure: single diode
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| HGTD1N120BNS9A |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.7A
Power dissipation: 60W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 6A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.7A
Power dissipation: 60W
Case: DPAK
Gate-emitter voltage: ±20V
Pulsed collector current: 6A
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MMBFJ175 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
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Mindestbestellmenge: 5 Stücke
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| 2SK932-24-TB-E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Drain-source voltage: 15V
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 14.5mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 14.5mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Drain-source voltage: 15V
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
| 2SK932-23-TB-E |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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| FSA2275UMX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT x2
Kind of package: reel; tape
Case: UMLP12
Number of channels: 2
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| FSA2259UMX |
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.4V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.4VDC; CMOS,TTL
Mounting: SMD
Case: UMLP10
Operating temperature: -40...85°C
Kind of output: SPDT x2
Supply voltage: 1.65...4.4V DC
Number of channels: 2
Type of integrated circuit: analog switch
Technology: CMOS; TTL
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Mindestbestellmenge: 5000 Stücke
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