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FCH041N60F ONSEMI fch041n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 277nC
Pulsed drain current: 228A
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N93C66BT3ETAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAT93C66VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66VE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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BC817-40WT1G BC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5859 Stücke:
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417+0.17 EUR
544+0.13 EUR
685+0.1 EUR
1232+0.058 EUR
1573+0.045 EUR
2203+0.032 EUR
2326+0.031 EUR
Mindestbestellmenge: 417
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SBC817-40LT1G SBC817-40LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1693 Stücke:
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295+0.24 EUR
527+0.14 EUR
754+0.095 EUR
884+0.081 EUR
1693+0.043 EUR
Mindestbestellmenge: 295
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SBC817-40LT3G SBC817-40LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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NTHL040N120SC1 NTHL040N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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NTH4L040N120SC1 NTH4L040N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EE80AC42EAA0C7&compId=NTH4L040N120SC1.PDF?ci_sign=75a03753574f1c2662fc3a6cd42cdf08611042b4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NV24C08DWVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986880D5&compId=NV24C08LV-D.pdf?ci_sign=aa04e71618ee0a203eb7a9fbf4d8658992d37065 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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NV24C08MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E099869C0D5&compId=NV24C08LV-D.pdf?ci_sign=c8b0d0c540cb247cb139088583ed42ea03f90e66 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
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CAT24C08TDI-GT3 CAT24C08TDI-GT3 ONSEMI cat24c01-d.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08WI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7EE0D5&compId=CAT24C01-D.pdf?ci_sign=46a42641710b71c2fcfd2ae05195588ed1e8df2a Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAT24C08YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C6EEE0D5&compId=CAT24C01-D.pdf?ci_sign=dc022616d0264b9aed6a4f2359dd03f1ada8c8ef Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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CAV24C08WE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F3C20D5&compId=CAV24C02-D.pdf?ci_sign=adf57943e5db8a33148ce032b20162ec6b7ad8ed Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C08YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D4A9FC580D5&compId=CAV24C02-D.pdf?ci_sign=f5d100d5e3b6ff0aaa6d41f1bd1431624c05e0f3 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMC6675BZ ONSEMI fdmc6675bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -32A
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FDMS6673BZ ONSEMI fdms6673bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74HC11ADG MC74HC11ADG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C505820&compId=MC74HC11A-D.pdf?ci_sign=56868f864d0c93cf055c18e13c4572c26a865014 Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC11ADR2G MC74HC11ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C505820&compId=MC74HC11A-D.pdf?ci_sign=56868f864d0c93cf055c18e13c4572c26a865014 Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
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MC74HC11ADTG MC74HC11ADTG ONSEMI mc74hc11a-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS
Operating temperature: -55...125°C
auf Bestellung 1021 Stücke:
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203+0.35 EUR
304+0.24 EUR
404+0.18 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 203
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MC74HC11ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AD063A520D3&compId=MC74HC11A-D.pdf?ci_sign=26eb8b89afd2a001084bcd5a0cb3c2b106f3eb36 Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Operating temperature: -55...125°C
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BCP56T3G BCP56T3G ONSEMI bcp56t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G BC846CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2605 Stücke:
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621+0.12 EUR
962+0.074 EUR
1516+0.047 EUR
1731+0.041 EUR
2041+0.035 EUR
2605+0.027 EUR
Mindestbestellmenge: 621
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NTB25P06T4G ONSEMI ntb25p06-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
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BAT54AWT1G BAT54AWT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF616901649820&compId=BAT54AW.pdf?ci_sign=76561270fe758847454412dd3bd86394d5fc0e0f Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 7830 Stücke:
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715+0.1 EUR
1191+0.06 EUR
1471+0.049 EUR
1613+0.044 EUR
1985+0.036 EUR
2184+0.033 EUR
Mindestbestellmenge: 715
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SBAT54ALT1G SBAT54ALT1G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
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SBAT54ALT3G SBAT54ALT3G ONSEMI bat54alt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
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SBAT54AWT1G SBAT54AWT1G ONSEMI bat54awt1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
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BC857CWT1G BC857CWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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SBC857CLT1G SBC857CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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1SMB5931BT3G 1SMB5931BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1697 Stücke:
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129+0.56 EUR
169+0.42 EUR
201+0.36 EUR
307+0.23 EUR
400+0.18 EUR
421+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 129
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NV24C04DTVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463DE0D5&compId=NV24C04LV-D.pdf?ci_sign=f5e48c473d33e7f8902299d0c4efa3b6c35e08d7 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C04MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986740D5&compId=NV24C04LV-D.pdf?ci_sign=b193ec2711f05ba209565b475763265bbb037a4d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C04WE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC30C0D5&compId=CAV24C02-D.pdf?ci_sign=3c1ba3c5aae13c45afbaa66f43ea3feb7473c12d Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAV24C04YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC3200D5&compId=CAV24C02-D.pdf?ci_sign=aaf3704f47e663568e02b21318e2f4fa2d21e938 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC856BWT1G BC856BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2210 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
736+0.097 EUR
910+0.079 EUR
1583+0.045 EUR
1977+0.036 EUR
2210+0.033 EUR
Mindestbestellmenge: 500
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SBC856BDW1T1G SBC856BDW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
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358+0.2 EUR
603+0.12 EUR
925+0.077 EUR
1516+0.047 EUR
1603+0.045 EUR
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SBC856BDW1T3G SBC856BDW1T3G ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SBC856BLT1G SBC856BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SBC856BLT3G SBC856BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SBC856BWT1G SBC856BWT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999D04A9CC7233820&compId=BC85xBWT1.pdf?ci_sign=6e0765da833922d878ef79c21486168c0e08b8cb Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
715+0.1 EUR
734+0.097 EUR
Mindestbestellmenge: 500
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NCS20071SN2T1G NCS20071SN2T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EFB6F38BB240C7&compId=NCS20071_2_4.PDF?ci_sign=5caef09ea2a98993b5dc9652b8628ec870ef2450 Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 3MHz
Input offset voltage: 4.5mV
Integrated circuit features: rail-to-rail output
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
auf Bestellung 2412 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
130+0.55 EUR
154+0.46 EUR
163+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 93
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1N5378BG 1N5378BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 100V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 942 Stücke:
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117+0.61 EUR
157+0.46 EUR
204+0.35 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 117
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NV24C16DTVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CCC0D5&compId=NV24C16LV-D.pdf?ci_sign=700776b599b431924d8e6cd07138c6ce569e7de9 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16DWVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CE00D5&compId=NV24C16LV-D.pdf?ci_sign=7f1efbda3124713aa8f91c4e1d3c54537b236c4b Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16MUW3VLTBG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CF40D5&compId=NV24C16LV-D.pdf?ci_sign=67b575555c0d2739b6f85577c47584ce1e2780b5 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16SNVLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D080D5&compId=NV24C16LV-D.pdf?ci_sign=7b087325c37cd9902aba8e7080a42ead6acdefcb Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NV24C16UVLT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D1C0D5&compId=NV24C16LV-D.pdf?ci_sign=ab083a61992d8dbec00eb97ad21b590ba0996bea Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBTA64LT1G MMBTA64LT1G ONSEMI mmbta63lt1-d.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
725+0.099 EUR
769+0.093 EUR
Mindestbestellmenge: 417
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BZX84C15LT1G BZX84C15LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 25397 Stücke:
Lieferzeit 14-21 Tag (e)
548+0.13 EUR
981+0.073 EUR
1352+0.053 EUR
1471+0.049 EUR
1568+0.046 EUR
2273+0.031 EUR
3031+0.024 EUR
3206+0.022 EUR
Mindestbestellmenge: 548
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MM74HCT138MTC MM74HCT138MTC ONSEMI ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
auf Bestellung 83 Stücke:
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45+1.6 EUR
83+0.86 EUR
Mindestbestellmenge: 45
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NTHL050N65S3HF ONSEMI nthl050n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Power dissipation: 378W
Case: TO247
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 145A
Drain-source voltage: 650V
Drain current: 37A
On-state resistance: 41mΩ
Polarisation: unipolar
Produkt ist nicht verfügbar
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FQD3P50TM FQD3P50TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819951B2E4A3E259&compId=FQD3P50.pdf?ci_sign=a950cf6ebbbe597ca1a787d914f57d7b13e525c5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
50+1.46 EUR
75+0.96 EUR
80+0.9 EUR
500+0.87 EUR
Mindestbestellmenge: 38
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1N5361BG 1N5361BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 510 Stücke:
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122+0.59 EUR
178+0.4 EUR
228+0.31 EUR
290+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 122
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MMBT5087LT1G MMBT5087LT1G ONSEMI mmbt5087lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Frequency: 40MHz
Collector-emitter voltage: 50V
Current gain: 250...800
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
auf Bestellung 2408 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
633+0.11 EUR
866+0.083 EUR
942+0.076 EUR
1003+0.071 EUR
2119+0.034 EUR
2243+0.032 EUR
Mindestbestellmenge: 385
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BC857BWT1G
+1
 		BC857BWT1G ONSEMI bc856bwt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
490+0.14 EUR
Mindestbestellmenge: 490
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FDMS3660S FDMS3660S ONSEMI fdms3660s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2598 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
40+1.79 EUR
46+1.57 EUR
48+1.5 EUR
250+1.44 EUR
500+1.43 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7602S ONSEMI fdms7602s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH041N60F fch041n60f-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 277nC
Pulsed drain current: 228A
Produkt ist nicht verfügbar
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N93C66BT3ETAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463CA0D5&compId=N93C66-D.pdf?ci_sign=5bfc5f3b461027748308ee75b851e77d40bd8319
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT93C66VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC2A80D5&compId=CAT93C66-D.pdf?ci_sign=62340b4ea56cede7d50c60a2d7d456979d20b519
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66VE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB84640D5&compId=CAV93C66-D.pdf?ci_sign=fdc1a4f7244adc48067537289d1ddd3a53af0f16
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV93C66YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D254619A0D5&compId=CAV93C66-D.pdf?ci_sign=76dd9bab943e54597fe97188e4e39078a79fc13a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BC817-40WT1G bc817-40w-d.pdf
BC817-40WT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5859 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
544+0.13 EUR
685+0.1 EUR
1232+0.058 EUR
1573+0.045 EUR
2203+0.032 EUR
2326+0.031 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
SBC817-40LT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e
SBC817-40LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
527+0.14 EUR
754+0.095 EUR
884+0.081 EUR
1693+0.043 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
SBC817-40LT3G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D2CEC632F8B820&compId=BC817-xxL.pdf?ci_sign=d6b2ff1b3012a91e598259fc6866cd90b20c585e
SBC817-40LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTHL040N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EEB6CE3B7C60C7&compId=NTHL040N120SC1.PDF?ci_sign=d6a134f46763306b2ba210f070ef926d26e4738a
NTHL040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L040N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EE80AC42EAA0C7&compId=NTH4L040N120SC1.PDF?ci_sign=75a03753574f1c2662fc3a6cd42cdf08611042b4
NTH4L040N120SC1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NV24C08DWVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986880D5&compId=NV24C08LV-D.pdf?ci_sign=aa04e71618ee0a203eb7a9fbf4d8658992d37065
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C08MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E099869C0D5&compId=NV24C08LV-D.pdf?ci_sign=c8b0d0c540cb247cb139088583ed42ea03f90e66
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08TDI-GT3 cat24c01-d.pdf
CAT24C08TDI-GT3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08WI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C165F7EE0D5&compId=CAT24C01-D.pdf?ci_sign=46a42641710b71c2fcfd2ae05195588ed1e8df2a
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C6EEE0D5&compId=CAT24C01-D.pdf?ci_sign=dc022616d0264b9aed6a4f2359dd03f1ada8c8ef
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C08WE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79CDD2F3C20D5&compId=CAV24C02-D.pdf?ci_sign=adf57943e5db8a33148ce032b20162ec6b7ad8ed
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C08YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D4A9FC580D5&compId=CAV24C02-D.pdf?ci_sign=f5d100d5e3b6ff0aaa6d41f1bd1431624c05e0f3
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDMC6675BZ fdmc6675bz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Mounting: SMD
Case: WDFN8
Drain-source voltage: -30V
Drain current: -20A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 65nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -32A
Produkt ist nicht verfügbar
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FDMS6673BZ fdms6673bz-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC11ADG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C505820&compId=MC74HC11A-D.pdf?ci_sign=56868f864d0c93cf055c18e13c4572c26a865014
MC74HC11ADG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: tube
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC11ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C505820&compId=MC74HC11A-D.pdf?ci_sign=56868f864d0c93cf055c18e13c4572c26a865014
MC74HC11ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC74HC11ADTG mc74hc11a-d.pdf
MC74HC11ADTG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: triple; 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Quiescent current: 40µA
Technology: CMOS
Operating temperature: -55...125°C
auf Bestellung 1021 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
203+0.35 EUR
304+0.24 EUR
404+0.18 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 203
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC11ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62AD063A520D3&compId=MC74HC11A-D.pdf?ci_sign=26eb8b89afd2a001084bcd5a0cb3c2b106f3eb36
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 3
Number of inputs: 3
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Family: HC
Kind of package: reel; tape
Manufacturer series: HC
Technology: CMOS
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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BCP56T3G bcp56t1-d.pdf
BCP56T3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
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BC846CLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF969ADE4FC0CE&compId=BC846ALT1G.PDF?ci_sign=17a225e30779fe945b7cb9d0f0054338a73015b1
BC846CLT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2605 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
621+0.12 EUR
962+0.074 EUR
1516+0.047 EUR
1731+0.041 EUR
2041+0.035 EUR
2605+0.027 EUR
Mindestbestellmenge: 621
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NTB25P06T4G ntb25p06-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 120W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±15V
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
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BAT54AWT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDF616901649820&compId=BAT54AW.pdf?ci_sign=76561270fe758847454412dd3bd86394d5fc0e0f
BAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 7830 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1191+0.06 EUR
1471+0.049 EUR
1613+0.044 EUR
1985+0.036 EUR
2184+0.033 EUR
Mindestbestellmenge: 715
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SBAT54ALT1G bat54alt1-d.pdf
SBAT54ALT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54ALT3G bat54alt1-d.pdf
SBAT54ALT3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAT54AWT1G bat54awt1-d.pdf
SBAT54AWT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC857CWT1G bc856bwt1-d.pdf
BC857CWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC857CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
SBC857CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1SMB5931BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
1SMB5931BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
auf Bestellung 1697 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
169+0.42 EUR
201+0.36 EUR
307+0.23 EUR
400+0.18 EUR
421+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
NV24C04DTVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463DE0D5&compId=NV24C04LV-D.pdf?ci_sign=f5e48c473d33e7f8902299d0c4efa3b6c35e08d7
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C04MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79E09986740D5&compId=NV24C04LV-D.pdf?ci_sign=b193ec2711f05ba209565b475763265bbb037a4d
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C04WE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC30C0D5&compId=CAV24C02-D.pdf?ci_sign=3c1ba3c5aae13c45afbaa66f43ea3feb7473c12d
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAV24C04YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D05CC3200D5&compId=CAV24C02-D.pdf?ci_sign=aaf3704f47e663568e02b21318e2f4fa2d21e938
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC856BWT1G bc856bwt1-d.pdf
BC856BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
736+0.097 EUR
910+0.079 EUR
1583+0.045 EUR
1977+0.036 EUR
2210+0.033 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BDW1T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D06232CA861820&compId=BC85xBDW1T1.pdf?ci_sign=125a474811ec833921617ecc2553fd1202e9ad15
SBC856BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
603+0.12 EUR
925+0.077 EUR
1516+0.047 EUR
1603+0.045 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BDW1T3G bc856bdw1t1-d.pdf
SBC856BDW1T3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
SBC856BLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
SBC856BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BWT1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999D04A9CC7233820&compId=BC85xBWT1.pdf?ci_sign=6e0765da833922d878ef79c21486168c0e08b8cb
SBC856BWT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 734 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
715+0.1 EUR
734+0.097 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
NCS20071SN2T1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EFB6F38BB240C7&compId=NCS20071_2_4.PDF?ci_sign=5caef09ea2a98993b5dc9652b8628ec870ef2450
NCS20071SN2T1G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; TSOP5; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Kind of package: reel; tape
Number of channels: 1
Bandwidth: 3MHz
Input offset voltage: 4.5mV
Integrated circuit features: rail-to-rail output
Slew rate: 2.8V/μs
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
auf Bestellung 2412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
130+0.55 EUR
154+0.46 EUR
163+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
1N5378BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5378BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 100V; bulk; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 100V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
157+0.46 EUR
204+0.35 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16DTVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CCC0D5&compId=NV24C16LV-D.pdf?ci_sign=700776b599b431924d8e6cd07138c6ce569e7de9
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16DWVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CE00D5&compId=NV24C16LV-D.pdf?ci_sign=7f1efbda3124713aa8f91c4e1d3c54537b236c4b
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16MUW3VLTBG pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2CF40D5&compId=NV24C16LV-D.pdf?ci_sign=67b575555c0d2739b6f85577c47584ce1e2780b5
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16SNVLT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D080D5&compId=NV24C16LV-D.pdf?ci_sign=7b087325c37cd9902aba8e7080a42ead6acdefcb
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; TSOP5
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOP5
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NV24C16UVLT2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DC3F2D1C0D5&compId=NV24C16LV-D.pdf?ci_sign=ab083a61992d8dbec00eb97ad21b590ba0996bea
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBTA64LT1G mmbta63lt1-d.pdf
MMBTA64LT1G
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 769 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
725+0.099 EUR
769+0.093 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
BZX84C15LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C15LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
auf Bestellung 25397 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
548+0.13 EUR
981+0.073 EUR
1352+0.053 EUR
1471+0.049 EUR
1568+0.046 EUR
2273+0.031 EUR
3031+0.024 EUR
3206+0.022 EUR
Mindestbestellmenge: 548
Im Einkaufswagen  Stück im Wert von  UAH
MM74HCT138MTC ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw
MM74HCT138MTC
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Operating temperature: -40...85°C
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.6 EUR
83+0.86 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
NTHL050N65S3HF nthl050n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 37A; Idm: 145A; 378W; TO247
Type of transistor: N-MOSFET
Power dissipation: 378W
Case: TO247
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 145A
Drain-source voltage: 650V
Drain current: 37A
On-state resistance: 41mΩ
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD3P50TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED7819951B2E4A3E259&compId=FQD3P50.pdf?ci_sign=a950cf6ebbbe597ca1a787d914f57d7b13e525c5
FQD3P50TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -1.33A; 50W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -1.33A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.9Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
50+1.46 EUR
75+0.96 EUR
80+0.9 EUR
500+0.87 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
1N5361BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5361BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Kind of package: bulk
Manufacturer series: 1N53xxB
auf Bestellung 510 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
178+0.4 EUR
228+0.31 EUR
290+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 122
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MMBT5087LT1G mmbt5087lt1-d.pdf
MMBT5087LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB
Frequency: 40MHz
Collector-emitter voltage: 50V
Current gain: 250...800
Collector current: 50mA
Type of transistor: PNP
Power dissipation: 0.25W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
auf Bestellung 2408 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
633+0.11 EUR
866+0.083 EUR
942+0.076 EUR
1003+0.071 EUR
2119+0.034 EUR
2243+0.032 EUR
Mindestbestellmenge: 385
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BC857BWT1G bc856bwt1-d.pdf
BC857BWT1G
+1
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
490+0.14 EUR
Mindestbestellmenge: 490
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FDMS3660S fdms3660s-d.pdf
FDMS3660S
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/60A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±12V
On-state resistance: 11/2.6mΩ
Mounting: SMD
Gate charge: 29/87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
40+1.79 EUR
46+1.57 EUR
48+1.5 EUR
250+1.44 EUR
500+1.43 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7602S fdms7602s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 12/7.2mΩ
Mounting: SMD
Gate charge: 28/46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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