Foto | Bezeichnung | Hersteller | Beschreibung |
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SBCP53-10T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Case: SOT223-4; TO261-4 Mounting: SMD Power dissipation: 1.5W Collector current: 1.5A Current gain: 63...160 Collector-emitter voltage: 80V Application: automotive industry Frequency: 50MHz |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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SBCP53T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape Case: SOT223-4; TO261-4 Mounting: SMD Power dissipation: 1.5W Collector current: 1.5A Current gain: 40...250 Collector-emitter voltage: 80V Application: automotive industry Frequency: 50MHz |
auf Bestellung 833 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54SWT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 7.6pF Reverse recovery time: 5ns Power dissipation: 0.2W Max. forward impulse current: 0.6A |
auf Bestellung 14153 Stücke: Lieferzeit 14-21 Tag (e) |
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NV24C32DWVLT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C32MUW3VLTBG | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C32UVLT2G | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV24C32C4CTR | ONSEMI |
![]() Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC112ADG | ONSEMI |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; tube Operating temperature: -55...125°C Case: SO16 Manufacturer series: HC Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Kind of package: tube Mounting: SMD Number of channels: 2 Supply voltage: 2...6V DC Technology: CMOS Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC112ADR2G | ONSEMI |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; reel,tape Operating temperature: -55...125°C Case: SO16 Manufacturer series: HC Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Kind of package: reel; tape Mounting: SMD Number of channels: 2 Supply voltage: 2...6V DC Technology: CMOS Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC112ADTG | ONSEMI |
![]() Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP16; tube Operating temperature: -55...125°C Case: TSSOP16 Manufacturer series: HC Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Kind of package: tube Mounting: SMD Number of channels: 2 Supply voltage: 2...6V DC Technology: CMOS Type of integrated circuit: digital |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC112ADTR2G | ONSEMI |
![]() Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; HC; SMD; TSSOP16; HC Operating temperature: -55...125°C Case: TSSOP16 Manufacturer series: HC Family: HC Kind of integrated circuit: JK flip-flop Kind of package: reel; tape Mounting: SMD Number of channels: 2 Number of inputs: 5 Supply voltage: 2...6V DC Technology: CMOS Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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J111 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 30Ω Kind of package: bulk |
auf Bestellung 5556 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC7660 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8 Case: PQFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Technology: PowerTrench® Kind of package: reel; tape Polarisation: unipolar Gate charge: 86nC On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 40A Power dissipation: 41W |
auf Bestellung 2111 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7S00M5X | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT23-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
auf Bestellung 14619 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BPDW1T1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
auf Bestellung 6346 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847BPDW1T2G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Kind of transistor: complementary pair |
auf Bestellung 2443 Stücke: Lieferzeit 14-21 Tag (e) |
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LM385D-2.5G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA Type of integrated circuit: voltage reference source Tolerance: ±3% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Kind of package: bulk Maximum output current: 20mA Reference voltage: 2.5V |
auf Bestellung 721 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14060BDG | ONSEMI |
![]() Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Technology: CMOS Type of integrated circuit: digital Mounting: SMD Case: SO16 Kind of integrated circuit: 14bit; binary counter; oscillator |
auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC245DWG | ONSEMI |
![]() Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Family: VHC Kind of package: tube Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC245DWR2G | ONSEMI |
![]() Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DF04M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A Max. off-state voltage: 0.4kV Load current: 1.5A Case: MDIP4L Max. forward voltage: 1.1V Max. forward impulse current: 50A Kind of package: tube Type of bridge rectifier: single-phase Electrical mounting: THT Features of semiconductor devices: glass passivated |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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LP2951CD-3.3R2G | ONSEMI |
![]() ![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 1.25...29V Tolerance: ±1% Operating temperature: -40...125°C Manufacturer series: LP2951 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LP2951CDR2G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.35V Output voltage: 1.235...30V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 0...30V Tolerance: ±1% Operating temperature: -40...125°C Manufacturer series: LP2951 |
auf Bestellung 916 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33164D-3G | ONSEMI |
![]() ![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Operating temperature: -40...125°C Case: SO8 DC supply current: 32µA Supply voltage: 1...10V DC Type of integrated circuit: supervisor circuit Maximum output current: 30mA Active logical level: low Kind of RESET output: open collector Kind of package: tube Threshold on-voltage: 2.71V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH041N60E | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 231A Gate charge: 285nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCH041N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 228A Gate charge: 277nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
N93C66BT3ETAG | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.7...5.5V Clock frequency: 4MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAT93C66VI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 1.8...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV93C66VE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV93C66YE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BC817-40WT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 5734 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC817-40LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 1693 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC817-40LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTHL040N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 42A Pulsed drain current: 240A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTH4L040N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 41A Pulsed drain current: 232A Power dissipation: 160W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 56mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NV24C08DWVLT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C08MUW3VLTBG | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CAT24C08TDI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSOT23-5 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
CAT24C08WI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAT24C08YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV24C08WE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV24C08YE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMC6675BZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: WDFN8 Pulsed drain current: -32A Drain-source voltage: -30V Drain current: -20A Gate charge: 65nC On-state resistance: 27mΩ Power dissipation: 36W Gate-source voltage: ±25V Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FDMS6673BZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -52A Pulsed drain current: -422A Power dissipation: 73W Case: Power56 Gate-source voltage: ±25V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74HC11ADG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube Operating temperature: -55...125°C Case: SO14 Family: HC Kind of package: tube Mounting: SMD Number of channels: triple; 3 Number of inputs: 3 Supply voltage: 2...6V DC Kind of gate: AND Technology: CMOS Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC11ADR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC Operating temperature: -55...125°C Case: SO14 Family: HC Kind of package: reel; tape Mounting: SMD Number of channels: triple; 3 Number of inputs: 3 Supply voltage: 2...6V DC Kind of gate: AND Technology: CMOS Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC11ADTG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Operating temperature: -55...125°C Case: TSSOP14 Family: HC Kind of package: reel; tape Mounting: SMD Number of channels: triple; 3 Quiescent current: 40µA Number of inputs: 3 Supply voltage: 2...6V DC Kind of gate: AND Technology: CMOS Type of integrated circuit: digital |
auf Bestellung 1021 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HC11ADTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC Operating temperature: -55...125°C Case: TSSOP14 Manufacturer series: HC Family: HC Kind of package: reel; tape Mounting: SMD Number of channels: 3 Number of inputs: 3 Supply voltage: 2...6V DC Kind of gate: AND Technology: CMOS Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BCP56T3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC846CLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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NTB25P06T4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Drain current: -27.5A On-state resistance: 75mΩ Gate-source voltage: ±15V Power dissipation: 120W Case: D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAT54AWT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 7.6pF Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
auf Bestellung 7330 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54ALT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBAT54ALT3G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SBAT54AWT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC857CWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 13572 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC857CLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NV24C04DTVLT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C04MUW3VLTBG | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV24C04WE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
SBCP53-10T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Mounting: SMD
Power dissipation: 1.5W
Collector current: 1.5A
Current gain: 63...160
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Mounting: SMD
Power dissipation: 1.5W
Collector current: 1.5A
Current gain: 63...160
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 50MHz
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
SBCP53T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Mounting: SMD
Power dissipation: 1.5W
Collector current: 1.5A
Current gain: 40...250
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Mounting: SMD
Power dissipation: 1.5W
Collector current: 1.5A
Current gain: 40...250
Collector-emitter voltage: 80V
Application: automotive industry
Frequency: 50MHz
auf Bestellung 833 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
193+ | 0.37 EUR |
257+ | 0.28 EUR |
363+ | 0.2 EUR |
385+ | 0.19 EUR |
BAT54SWT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
auf Bestellung 14153 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
557+ | 0.13 EUR |
705+ | 0.1 EUR |
890+ | 0.08 EUR |
1003+ | 0.071 EUR |
1425+ | 0.05 EUR |
3031+ | 0.024 EUR |
3206+ | 0.022 EUR |
NV24C32DWVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C32MUW3VLTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C32UVLT2G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV24C32C4CTR |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC112ADG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; tube
Operating temperature: -55...125°C
Case: SO16
Manufacturer series: HC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Mounting: SMD
Number of channels: 2
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; tube
Operating temperature: -55...125°C
Case: SO16
Manufacturer series: HC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Mounting: SMD
Number of channels: 2
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC112ADR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; reel,tape
Operating temperature: -55...125°C
Case: SO16
Manufacturer series: HC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; SO16; reel,tape
Operating temperature: -55...125°C
Case: SO16
Manufacturer series: HC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74HC112ADTG |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP16; tube
Operating temperature: -55...125°C
Case: TSSOP16
Manufacturer series: HC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Mounting: SMD
Number of channels: 2
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; HC; SMD; TSSOP16; tube
Operating temperature: -55...125°C
Case: TSSOP16
Manufacturer series: HC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Mounting: SMD
Number of channels: 2
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
MC74HC112ADTR2G |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; HC; SMD; TSSOP16; HC
Operating temperature: -55...125°C
Case: TSSOP16
Manufacturer series: HC
Family: HC
Kind of integrated circuit: JK flip-flop
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Number of inputs: 5
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; HC; SMD; TSSOP16; HC
Operating temperature: -55...125°C
Case: TSSOP16
Manufacturer series: HC
Family: HC
Kind of integrated circuit: JK flip-flop
Kind of package: reel; tape
Mounting: SMD
Number of channels: 2
Number of inputs: 5
Supply voltage: 2...6V DC
Technology: CMOS
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
J111 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: bulk
auf Bestellung 5556 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
188+ | 0.38 EUR |
227+ | 0.32 EUR |
368+ | 0.19 EUR |
443+ | 0.16 EUR |
468+ | 0.15 EUR |
511+ | 0.14 EUR |
FDMC7660 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
auf Bestellung 2111 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
NC7S00M5X |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 14619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
705+ | 0.1 EUR |
849+ | 0.084 EUR |
1516+ | 0.047 EUR |
1603+ | 0.045 EUR |
BC847BPDW1T1G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 6346 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
486+ | 0.15 EUR |
601+ | 0.12 EUR |
841+ | 0.085 EUR |
2033+ | 0.035 EUR |
2146+ | 0.033 EUR |
BC847BPDW1T2G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
auf Bestellung 2443 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
463+ | 0.15 EUR |
532+ | 0.13 EUR |
770+ | 0.093 EUR |
910+ | 0.079 EUR |
1454+ | 0.049 EUR |
1539+ | 0.046 EUR |
LM385D-2.5G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±3%; SO8; bulk; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±3%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: bulk
Maximum output current: 20mA
Reference voltage: 2.5V
auf Bestellung 721 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
76+ | 0.95 EUR |
94+ | 0.77 EUR |
134+ | 0.53 EUR |
142+ | 0.51 EUR |
588+ | 0.49 EUR |
MC14060BDG |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Kind of integrated circuit: 14bit; binary counter; oscillator
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SO16
Kind of integrated circuit: 14bit; binary counter; oscillator
auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
132+ | 0.54 EUR |
143+ | 0.5 EUR |
159+ | 0.45 EUR |
162+ | 0.44 EUR |
168+ | 0.43 EUR |
288+ | 0.42 EUR |
MC74VHC245DWG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74VHC245DWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DF04M |
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Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 0.4kV
Load current: 1.5A
Case: MDIP4L
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 0.4kV
Load current: 1.5A
Case: MDIP4L
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: THT
Features of semiconductor devices: glass passivated
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
151+ | 0.48 EUR |
167+ | 0.43 EUR |
181+ | 0.4 EUR |
LP2951CD-3.3R2G | ![]() |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.25...29V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.25...29V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
Produkt ist nicht verfügbar
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Stück im Wert von UAH
LP2951CDR2G |
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Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...30V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.235÷30V; 0.1A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 1.235...30V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 0...30V
Tolerance: ±1%
Operating temperature: -40...125°C
Manufacturer series: LP2951
auf Bestellung 916 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
169+ | 0.42 EUR |
186+ | 0.38 EUR |
363+ | 0.2 EUR |
382+ | 0.19 EUR |
MC33164D-3G | ![]() |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Operating temperature: -40...125°C
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: supervisor circuit
Maximum output current: 30mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Operating temperature: -40...125°C
Case: SO8
DC supply current: 32µA
Supply voltage: 1...10V DC
Type of integrated circuit: supervisor circuit
Maximum output current: 30mA
Active logical level: low
Kind of RESET output: open collector
Kind of package: tube
Threshold on-voltage: 2.71V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
45+ | 1.6 EUR |
103+ | 0.7 EUR |
106+ | 0.67 EUR |
FCH041N60E |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 231A
Gate charge: 285nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCH041N60F |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 228A
Gate charge: 277nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
N93C66BT3ETAG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.7...5.5V
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT93C66VI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 1.8...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV93C66VE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV93C66YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC817-40WT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 5734 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
500+ | 0.14 EUR |
569+ | 0.13 EUR |
848+ | 0.084 EUR |
1015+ | 0.07 EUR |
1502+ | 0.048 EUR |
2203+ | 0.032 EUR |
2337+ | 0.031 EUR |
SBC817-40LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1693 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
486+ | 0.15 EUR |
687+ | 0.1 EUR |
795+ | 0.09 EUR |
1693+ | 0.043 EUR |
SBC817-40LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTHL040N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTH4L040N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 41A; Idm: 232A; 160W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 41A
Pulsed drain current: 232A
Power dissipation: 160W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C08DWVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C08MUW3VLTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT24C08TDI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT24C08WI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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CAT24C08YI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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CAV24C08WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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CAV24C08YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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FDMC6675BZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; Idm: -32A; 36W; WDFN8
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: WDFN8
Pulsed drain current: -32A
Drain-source voltage: -30V
Drain current: -20A
Gate charge: 65nC
On-state resistance: 27mΩ
Power dissipation: 36W
Gate-source voltage: ±25V
Polarisation: unipolar
Produkt ist nicht verfügbar
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FDMS6673BZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74HC11ADG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Operating temperature: -55...125°C
Case: SO14
Family: HC
Kind of package: tube
Mounting: SMD
Number of channels: triple; 3
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; tube
Operating temperature: -55...125°C
Case: SO14
Family: HC
Kind of package: tube
Mounting: SMD
Number of channels: triple; 3
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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MC74HC11ADR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Operating temperature: -55...125°C
Case: SO14
Family: HC
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; HC
Operating temperature: -55...125°C
Case: SO14
Family: HC
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Produkt ist nicht verfügbar
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MC74HC11ADTG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Operating temperature: -55...125°C
Case: TSSOP14
Family: HC
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Quiescent current: 40µA
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Operating temperature: -55...125°C
Case: TSSOP14
Family: HC
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Quiescent current: 40µA
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
auf Bestellung 1021 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
203+ | 0.35 EUR |
304+ | 0.24 EUR |
404+ | 0.18 EUR |
725+ | 0.099 EUR |
770+ | 0.093 EUR |
MC74HC11ADTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Operating temperature: -55...125°C
Case: TSSOP14
Manufacturer series: HC
Family: HC
Kind of package: reel; tape
Mounting: SMD
Number of channels: 3
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; TSSOP14; HC; 2÷6VDC; HC
Operating temperature: -55...125°C
Case: TSSOP14
Manufacturer series: HC
Family: HC
Kind of package: reel; tape
Mounting: SMD
Number of channels: 3
Number of inputs: 3
Supply voltage: 2...6V DC
Kind of gate: AND
Technology: CMOS
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCP56T3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC846CLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
621+ | 0.12 EUR |
962+ | 0.074 EUR |
1516+ | 0.047 EUR |
1731+ | 0.041 EUR |
2041+ | 0.035 EUR |
2400+ | 0.03 EUR |
NTB25P06T4G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
On-state resistance: 75mΩ
Gate-source voltage: ±15V
Power dissipation: 120W
Case: D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
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BAT54AWT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 7330 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
715+ | 0.1 EUR |
1191+ | 0.06 EUR |
1471+ | 0.049 EUR |
1613+ | 0.044 EUR |
1993+ | 0.036 EUR |
2193+ | 0.033 EUR |
SBAT54ALT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
Im Einkaufswagen
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SBAT54ALT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBAT54AWT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BC857CWT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 13572 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
610+ | 0.12 EUR |
807+ | 0.089 EUR |
1270+ | 0.056 EUR |
1613+ | 0.044 EUR |
2605+ | 0.027 EUR |
3247+ | 0.022 EUR |
3449+ | 0.021 EUR |
3572+ | 0.02 EUR |
SBC857CLT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C04DTVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C04MUW3VLTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV24C04WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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