Foto | Bezeichnung | Hersteller | Beschreibung |
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FDB120N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 296A Power dissipation: 170W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N4148 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 1A Power dissipation: 0.5W Kind of package: bulk |
auf Bestellung 11459 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C13 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 13V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C11 | ONSEMI |
![]() Description: Diode: Zener; 1.3W; 11V; bulk; DO41; single diode; 0.5uA; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 11V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Leakage current: 0.5µA |
auf Bestellung 1367 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LVX4051DTG | ONSEMI |
![]() Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS Manufacturer series: LVX |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD1503A-D87Z | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: double series Capacitance: 4pF Case: SOT23 Max. forward voltage: 1.15V Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1201 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBD301LT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 200mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 1.5pF Max. forward voltage: 0.6V Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1504A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 200V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 1.15V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 4pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1204 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4148 | ONSEMI |
![]() Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Kind of package: bulk; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDC6420C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 20/-20V Drain current: 3/-2.2A Power dissipation: 0.9W Case: SuperSOT-6 Gate-source voltage: ±12V On-state resistance: 70/125mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 1728 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC610PZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6 On-state resistance: 75mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -30V Drain current: -4.9A |
auf Bestellung 1826 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6310P | ONSEMI |
![]() Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6 On-state resistance: 184mΩ Type of transistor: P-MOSFET x2 Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -2.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
NTD20N03L27T4G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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H11D1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6 Type of optocoupler: optocoupler Mounting: THT Case: DIP6 Max. off-state voltage: 6V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
auf Bestellung 625 Stücke: Lieferzeit 14-21 Tag (e) |
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H11D1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Type of optocoupler: optocoupler Mounting: SMD Case: PDIP6 Max. off-state voltage: 6V Collector-emitter voltage: 300V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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H11D1SR2VM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V Manufacturer series: H11DX Type of optocoupler: optocoupler Mounting: SMD Case: PDIP6 Max. off-state voltage: 6V Collector-emitter voltage: 300V Turn-on time: 5µs Turn-off time: 5µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 20%@10mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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74VHC00MTC | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Kind of gate: NAND Number of inputs: 2 Family: VHC |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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74VHC00MTCX | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Family: VHC Quiescent current: 20µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC74VHC00DTG | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Quiescent current: 40µA Kind of package: tube Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC74VHC00DR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC00DTR2G | ONSEMI |
![]() Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Family: VHC Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
BC638TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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sm05t1g | ONSEMI |
![]() ![]() Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD Type of diode: TVS array Breakdown voltage: 6.7V Peak pulse power dissipation: 0.3kW Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 5V Kind of package: reel; tape Leakage current: 10µA Version: ESD Max. forward impulse current: 17A |
auf Bestellung 1208 Stücke: Lieferzeit 14-21 Tag (e) |
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SRDA05-4R2G | ONSEMI |
![]() Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Mounting: SMD Case: SO8 Max. off-state voltage: 5V Number of channels: 4 Kind of package: reel; tape Capacitance: 8pF Version: ESD |
auf Bestellung 2496 Stücke: Lieferzeit 14-21 Tag (e) |
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FPF2495UCX | ONSEMI |
![]() ![]() Description: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SMMBTA14LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.3A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NC7SP125P5X | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Mounting: SMD Case: SC70-5 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 0.9µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MBR41H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. load current: 40A Max. forward voltage: 0.76V Max. forward impulse current: 350A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FAN3217TMX-F085 | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Impulse rise time: 22ns Application: automotive industry Pulse fall time: 17ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN3268TMX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Impulse rise time: 22ns Pulse fall time: 17ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN3278TMX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -1.5...1A Number of channels: 2 Supply voltage: 8...27V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting |
Produkt ist nicht verfügbar |
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NCP785AH33T1G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 3.3V Output current: 10mA Case: SOT89 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±5% Number of channels: 1 Input voltage: 25...450V Manufacturer series: NCP785A |
Produkt ist nicht verfügbar |
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BAT54CTT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT416 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SS14FP | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MBR140ESFT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.56V Kind of package: reel; tape Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
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SS16FA | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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SS16FP | ONSEMI |
![]() Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123HE Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MOC3082M | ONSEMI |
![]() Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Manufacturer series: MOC3082M Output voltage: 800V Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 5.3kV Trigger current: 10mA Type of optocoupler: optotriac Mounting: THT Case: DIP6 Max. off-state voltage: 3V |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3082SR2VM | ONSEMI |
![]() Description: Optotriac; 5.3kV; zero voltage crossing driver; Gull wing 6 Manufacturer series: MOC3082M Case: Gull wing 6 Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 5.3kV Type of optocoupler: optotriac Mounting: SMD |
auf Bestellung 688 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB070AN06A0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 175W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SB07-03C-TB-E | ONSEMI |
![]() Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape Mounting: SMD Case: SC59 Max. off-state voltage: 30V Max. forward voltage: 0.55V Load current: 0.7A Semiconductor structure: single diode Max. forward impulse current: 5A Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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FFSP1665A | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube Mounting: THT Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220-2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FCH170N60 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SMMSD4148T1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MM74HCT138M | ONSEMI |
![]() Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Kind of package: tube Manufacturer series: HCT Technology: TTL Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HCT138ADR2G | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Mounting: SMD Case: SOIC16 Family: HCT Supply voltage: 2...6V DC Number of channels: 1 Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS; TTL Number of inputs: 6 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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MC74HCT138ADTR2G | ONSEMI |
![]() Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Mounting: SMD Case: TSSOP16 Family: HCT Supply voltage: 2...6V DC Number of channels: 1 Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS; TTL Number of inputs: 6 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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MM74HCT138MX | ONSEMI |
![]() Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; line decoder Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Quiescent current: 160µA Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
BLDC-GEVK | ONSEMI |
![]() Description: Expansion board; prototype board; Comp: LV8907UWR2G Type of accessories for development kits: expansion board Components: LV8907UWR2G Interface: I2C; I2C - Slave; SPI Kind of connector: pin strips; screw development kits accessories features: Arduino Shield compatible; brushless DC motor driver Kit contents: prototype board |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP431AVSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...125°C Operating voltage: 2.5...36V Kind of package: reel; tape Maximum output current: 0.1A |
auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVRB521S30T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MBR3100RLG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V Type of diode: Schottky rectifying Case: DO201AD Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.69V Max. forward impulse current: 150A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDD4141 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -10.8A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2342 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD112G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Collector-emitter voltage: 100V Current gain: 100...12000 Collector current: 2A Type of transistor: NPN Power dissipation: 1.75W Polarisation: bipolar Kind of transistor: Darlington Mounting: SMD Case: DPAK |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD112-1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK Collector-emitter voltage: 100V Current gain: 100...12000 Collector current: 2A Type of transistor: NPN Power dissipation: 1.75W Polarisation: bipolar Kind of transistor: Darlington Mounting: THT Case: IPAK |
auf Bestellung 129 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP4318ALCDR2G | ONSEMI |
![]() Description: IC: PMIC; resonant mode controller; -4.5÷1.5A; 22÷500kHz; Ch: 1 Type of integrated circuit: PMIC Mounting: SMD Case: SO8 Operating temperature: -40...125°C Operating voltage: 6.5...35V DC Kind of package: reel; tape Topology: push-pull; resonant LLC Frequency: 22...500kHz Output current: -4.5...1.5A Number of channels: 1 Kind of integrated circuit: resonant mode controller |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MBRF20100CTG | ONSEMI |
![]() ![]() Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Max. forward voltage: 0.85V Max. forward impulse current: 150A Kind of package: tube Max. load current: 20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC14007UBDG | ONSEMI |
![]() Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: complementary pair Kind of gate: combination; NOT Number of channels: dual; 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Quiescent current: 30µA |
auf Bestellung 159 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB120N10 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4148 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk; Ifsm: 1A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 1A
Power dissipation: 0.5W
Kind of package: bulk
auf Bestellung 11459 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
1471+ | 0.05 EUR |
2017+ | 0.04 EUR |
2578+ | 0.03 EUR |
2907+ | 0.03 EUR |
5618+ | 0.01 EUR |
5883+ | 0.01 EUR |
BZX85C13 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 13V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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30+ | 2.39 EUR |
BZX85C11 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 11V; bulk; DO41; single diode; 0.5uA; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 11V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Leakage current: 0.5µA
auf Bestellung 1367 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
562+ | 0.13 EUR |
682+ | 0.10 EUR |
1139+ | 0.06 EUR |
1200+ | 0.06 EUR |
1367+ | 0.05 EUR |
MC74LVX4051DTG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
63+ | 1.15 EUR |
98+ | 0.73 EUR |
104+ | 0.69 EUR |
MMBD1503A-D87Z |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 4pF
Case: SOT23
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1201 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
451+ | 0.16 EUR |
MMBD301LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 1.5pF
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1504A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 1.15V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBD1204 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N4148 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Kind of package: bulk; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; bulk,tape; DO35; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Kind of package: bulk; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDC6420C |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 20/-20V
Drain current: 3/-2.2A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 70/125mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 1728 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
96+ | 0.75 EUR |
184+ | 0.39 EUR |
195+ | 0.37 EUR |
1000+ | 0.35 EUR |
FDC610PZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4.9A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
On-state resistance: 75mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -30V
Drain current: -4.9A
auf Bestellung 1826 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
160+ | 0.45 EUR |
236+ | 0.30 EUR |
249+ | 0.29 EUR |
252+ | 0.28 EUR |
FDC6310P |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
On-state resistance: 184mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.2A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.2A; 0.96W; SuperSOT-6
On-state resistance: 184mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 0.96W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -2.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTD20N03L27T4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
H11D1M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
auf Bestellung 625 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
114+ | 0.63 EUR |
145+ | 0.50 EUR |
153+ | 0.47 EUR |
250+ | 0.46 EUR |
500+ | 0.45 EUR |
H11D1SR2M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
84+ | 0.86 EUR |
92+ | 0.78 EUR |
117+ | 0.61 EUR |
123+ | 0.58 EUR |
500+ | 0.56 EUR |
H11D1SR2VM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
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74VHC00MTC |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Kind of gate: NAND
Number of inputs: 2
Family: VHC
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
4+ | 17.88 EUR |
74VHC00MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 20µA
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Family: VHC
Quiescent current: 20µA
Kind of package: reel; tape
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MC74VHC00DTG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Quiescent current: 40µA
Kind of package: tube
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Quiescent current: 40µA
Kind of package: tube
Technology: CMOS
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MC74VHC00DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
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MC74VHC00DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
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BC638TA |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Produkt ist nicht verfügbar
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sm05t1g | ![]() |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Version: ESD
Max. forward impulse current: 17A
auf Bestellung 1208 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
486+ | 0.15 EUR |
561+ | 0.13 EUR |
663+ | 0.11 EUR |
695+ | 0.10 EUR |
910+ | 0.08 EUR |
928+ | 0.08 EUR |
962+ | 0.07 EUR |
SRDA05-4R2G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Capacitance: 8pF
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; SO8; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Mounting: SMD
Case: SO8
Max. off-state voltage: 5V
Number of channels: 4
Kind of package: reel; tape
Capacitance: 8pF
Version: ESD
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.22 EUR |
65+ | 1.10 EUR |
85+ | 0.84 EUR |
90+ | 0.80 EUR |
FPF2495UCX |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SMMBTA14LT1G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.3A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.3A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
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NC7SP125P5X |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; SMD; SC70-5; 0.9÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 0.9µA
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MBR41H100CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 0.76V
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. load current: 40A
Max. forward voltage: 0.76V
Max. forward impulse current: 350A
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FAN3217TMX-F085 |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Application: automotive industry
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Impulse rise time: 22ns
Application: automotive industry
Pulse fall time: 17ns
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FAN3268TMX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
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FAN3278TMX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Produkt ist nicht verfügbar
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NCP785AH33T1G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 10mA
Case: SOT89
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Manufacturer series: NCP785A
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 3.3V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 3.3V
Output current: 10mA
Case: SOT89
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Manufacturer series: NCP785A
Produkt ist nicht verfügbar
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BAT54CTT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT416; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT416
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
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SS14FP |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MBR140ESFT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.56V
Kind of package: reel; tape
Max. forward impulse current: 30A
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SS16FA |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SS16FP |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123HE
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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MOC3082M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Manufacturer series: MOC3082M
Output voltage: 800V
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Trigger current: 10mA
Type of optocoupler: optotriac
Mounting: THT
Case: DIP6
Max. off-state voltage: 3V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Manufacturer series: MOC3082M
Output voltage: 800V
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Trigger current: 10mA
Type of optocoupler: optotriac
Mounting: THT
Case: DIP6
Max. off-state voltage: 3V
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.46 EUR |
MOC3082SR2VM |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; Gull wing 6
Manufacturer series: MOC3082M
Case: Gull wing 6
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Type of optocoupler: optotriac
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 5.3kV; zero voltage crossing driver; Gull wing 6
Manufacturer series: MOC3082M
Case: Gull wing 6
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5.3kV
Type of optocoupler: optotriac
Mounting: SMD
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.30 EUR |
85+ | 0.85 EUR |
95+ | 0.76 EUR |
101+ | 0.71 EUR |
104+ | 0.69 EUR |
FDB070AN06A0 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 175W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 175W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.50 EUR |
SB07-03C-TB-E |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape
Mounting: SMD
Case: SC59
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC59; SMD; 30V; 0.7A; reel,tape
Mounting: SMD
Case: SC59
Max. off-state voltage: 30V
Max. forward voltage: 0.55V
Load current: 0.7A
Semiconductor structure: single diode
Max. forward impulse current: 5A
Kind of package: reel; tape
Type of diode: Schottky rectifying
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FFSP1665A |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220-2; tube
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220-2
Produkt ist nicht verfügbar
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FCH170N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 66A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
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SMMSD4148T1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MM74HCT138M |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Manufacturer series: HCT
Technology: TTL
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; TTL; SMD; SO16; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Manufacturer series: HCT
Technology: TTL
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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MC74HCT138ADR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: SOIC16
Family: HCT
Supply voltage: 2...6V DC
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: SOIC16
Family: HCT
Supply voltage: 2...6V DC
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC74HCT138ADTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: TSSOP16
Family: HCT
Supply voltage: 2...6V DC
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Mounting: SMD
Case: TSSOP16
Family: HCT
Supply voltage: 2...6V DC
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Number of inputs: 6
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MM74HCT138MX |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; CMOS; SMD; SO16; HCT; 160uA
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; line decoder
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Quiescent current: 160µA
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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BLDC-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LV8907UWR2G
Type of accessories for development kits: expansion board
Components: LV8907UWR2G
Interface: I2C; I2C - Slave; SPI
Kind of connector: pin strips; screw
development kits accessories features: Arduino Shield compatible; brushless DC motor driver
Kit contents: prototype board
Category: Development kits - others
Description: Expansion board; prototype board; Comp: LV8907UWR2G
Type of accessories for development kits: expansion board
Components: LV8907UWR2G
Interface: I2C; I2C - Slave; SPI
Kind of connector: pin strips; screw
development kits accessories features: Arduino Shield compatible; brushless DC motor driver
Kit contents: prototype board
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCP431AVSNT1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
auf Bestellung 594 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
122+ | 0.59 EUR |
174+ | 0.41 EUR |
400+ | 0.18 EUR |
443+ | 0.16 EUR |
468+ | 0.15 EUR |
NSVRB521S30T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR3100RLG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.69V
Type of diode: Schottky rectifying
Case: DO201AD
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.69V
Max. forward impulse current: 150A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDD4141 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2342 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
60+ | 1.20 EUR |
76+ | 0.95 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
500+ | 0.71 EUR |
MJD112G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: SMD
Case: DPAK
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: SMD
Case: DPAK
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
96+ | 0.75 EUR |
128+ | 0.56 EUR |
135+ | 0.53 EUR |
MJD112-1G |
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Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: IPAK
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; IPAK
Collector-emitter voltage: 100V
Current gain: 100...12000
Collector current: 2A
Type of transistor: NPN
Power dissipation: 1.75W
Polarisation: bipolar
Kind of transistor: Darlington
Mounting: THT
Case: IPAK
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
72+ | 1.00 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
NCP4318ALCDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -4.5÷1.5A; 22÷500kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 6.5...35V DC
Kind of package: reel; tape
Topology: push-pull; resonant LLC
Frequency: 22...500kHz
Output current: -4.5...1.5A
Number of channels: 1
Kind of integrated circuit: resonant mode controller
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -4.5÷1.5A; 22÷500kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Operating voltage: 6.5...35V DC
Kind of package: reel; tape
Topology: push-pull; resonant LLC
Frequency: 22...500kHz
Output current: -4.5...1.5A
Number of channels: 1
Kind of integrated circuit: resonant mode controller
Produkt ist nicht verfügbar
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MBRF20100CTG | ![]() |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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MC14007UBDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: complementary pair
Kind of gate: combination; NOT
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 30µA
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
143+ | 0.50 EUR |
159+ | 0.44 EUR |