| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| NCS21674DMG100R2G | ONSEMI |
 Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8 Mounting: SMT Operating temperature: -40...125°C Input bias current: 1µA Input offset current: 15µA Input offset voltage: 0.5mV Slew rate: 2V/μs Voltage supply range: 2.7...5.5V DC Kind of package: reel; tape Gain: 100V/V Bandwidth: 240kHz Number of channels: dual; 2 Type of integrated circuit: instrumentation amplifier Case: Micro8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBRA140T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.74V Kind of package: reel; tape Max. load current: 2A |
auf Bestellung 1574 Stücke: Lieferzeit 14-21 Tag (e) |
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MURA205T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 30ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.94V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MJH11021G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3 Polarisation: bipolar Kind of package: tube Kind of transistor: Darlington Case: TO247-3 Type of transistor: PNP Mounting: THT Collector current: 15A Power dissipation: 150W Collector-emitter voltage: 250V |
auf Bestellung 164 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR150RLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 1V Max. forward impulse current: 25A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4741ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA Kind of package: reel; tape |
auf Bestellung 1302 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC3510 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS3D2N10MDT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5 Case: DFN5 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 48nC On-state resistance: 3.5mΩ Gate-source voltage: ±20V Power dissipation: 155W Drain current: 142A Drain-source voltage: 100V Pulsed drain current: 879A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFS6H858NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5 Case: DFN5 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC On-state resistance: 19.5mΩ Gate-source voltage: ±20V Power dissipation: 21W Drain current: 30A Drain-source voltage: 80V Pulsed drain current: 142A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMYS020N08LHTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56 Case: LFPAK56 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC On-state resistance: 19.5mΩ Gate-source voltage: ±20V Power dissipation: 21W Drain current: 30A Drain-source voltage: 80V Pulsed drain current: 142A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDBL9403-F085T6 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 79.8W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.95mΩ Mounting: SMD Gate charge: 108nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8774CDT33RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1 Kind of package: reel; tape Application: automotive industry Case: DPAK4 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV8774CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape Kind of package: reel; tape Application: automotive industry Case: DPAK4 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Number of channels: 1 Output voltage: 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MURS240T3G | ONSEMI |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape Mounting: SMD Reverse recovery time: 65ns Max. forward voltage: 1.15V Max. off-state voltage: 0.4kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Power dissipation: 1W Gate-source voltage: ±8V |
auf Bestellung 1996 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS3151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W Case: SC70-6; SC88; SOT363 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A On-state resistance: 60mΩ Power dissipation: 0.625W Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NLAS3158MNR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA Operating temperature: -55...125°C Technology: CMOS Case: WDFN12 Kind of integrated circuit: multiplexer Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Number of channels: 2 Type of integrated circuit: analog switch |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTZS3151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD Case: SOT563F Version: ESD Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A On-state resistance: 0.15Ω Power dissipation: 0.21W Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAT54S | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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4N25M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVBC847BDW1T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVBC847BTT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC143ZDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT Base resistor: 4.7kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC857BTT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC114EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 10kΩ Kind of transistor: BRT Base resistor: 10kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC114YDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 10kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC114YPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 10kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC123JPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 2.2kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC124XPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...150 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 22kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC143TPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC143ZPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC144EDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT Base resistor: 47kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSVBC144EPDXV6T1G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Application: automotive industry Base-emitter resistor: 47kΩ Kind of transistor: BRT; complementary pair Base resistor: 47kΩ Quantity in set/package: 4000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NSVBC818-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVBC846BM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265W Case: SOT723 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NSVBC847BLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVBC856BM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.265W Case: SOT723 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVBC857BLT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVBC858AWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVBCH807-25LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NSVBCH817-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Application: automotive industry Frequency: 100MHz |
Produkt ist nicht verfügbar |
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NSVBCW32LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV1117ST12T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 12V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FQP2N40-F080 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Pulsed drain current: 7.2A Power dissipation: 40W Gate charge: 5.5nC Polarisation: unipolar Drain current: 1.14A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 5.8Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC7915CD2TR4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; MC7900 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -15V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7900 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSM6056MT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6 Mounting: SMD Type of transistor: NPN + diode Kind of package: reel; tape Case: SC74-6 Power dissipation: 0.38W Collector current: 0.6A Collector-emitter voltage: 40V Current gain: 300...100 Frequency: 250MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MC74AC32DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Operating temperature: -40...85°C Family: AC Supply voltage: 2...6V DC Kind of package: reel; tape Manufacturer series: AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC74AC32DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: AC Supply voltage: 2...6V DC Kind of package: reel; tape Manufacturer series: AC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NVTFS4C06NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 71A Pulsed drain current: 367A Power dissipation: 37W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS4C06NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 69A; Idm: 476A; 30.5W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 69A Pulsed drain current: 476A Power dissipation: 30.5W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTTFS4C06NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 166A Power dissipation: 31W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 11.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFS4C06NTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 71A Pulsed drain current: 367A Power dissipation: 37W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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|
FJB102TM | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK Mounting: SMD Type of transistor: NPN Collector current: 8A Power dissipation: 80W Collector-emitter voltage: 100V Current gain: 200...20000 Polarisation: bipolar Case: D2PAK Kind of transistor: Darlington |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMSD701T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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NCV21872DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 270kHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: Micro8 Operating temperature: -40...125°C Slew rate: 0.1V/μs Integrated circuit features: rail-to-rail; zero-drift Input offset voltage: 0.045mV Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA |
auf Bestellung 2984 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA8N90C-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 240W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FQB8N90CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement Technology: QFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1562ADBR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward Type of integrated circuit: PMIC Input voltage: 100V Output voltage: 20V Output current: 1...2.5A Frequency: 222kHz...1MHz Mounting: SMD Case: TSSOP16 Topology: forward Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP1562ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward Type of integrated circuit: PMIC Input voltage: 100V Output voltage: 20V Output current: 1...2.5A Frequency: 222kHz...1MHz Mounting: SMD Case: SO16 Topology: forward Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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|
NCP1562BDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward Type of integrated circuit: PMIC Input voltage: 100V Output voltage: 20V Output current: 1...2.5A Frequency: 222kHz...1MHz Mounting: SMD Case: SO16 Topology: forward Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NCS21674DMG100R2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual; 2
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 240kHz; Ch: 2; 2.7÷5.5VDC; Micro8
Mounting: SMT
Operating temperature: -40...125°C
Input bias current: 1µA
Input offset current: 15µA
Input offset voltage: 0.5mV
Slew rate: 2V/μs
Voltage supply range: 2.7...5.5V DC
Kind of package: reel; tape
Gain: 100V/V
Bandwidth: 240kHz
Number of channels: dual; 2
Type of integrated circuit: instrumentation amplifier
Case: Micro8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBRA140T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Kind of package: reel; tape
Max. load current: 2A
auf Bestellung 1574 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 136+ | 0.63 EUR |
| 183+ | 0.46 EUR |
| 225+ | 0.38 EUR |
| 360+ | 0.24 EUR |
| 428+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 544+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| MURA205T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 30ns; SMA; Ufmax: 940mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.94V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJH11021G |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Type of transistor: PNP
Mounting: THT
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 250V; 15A; 150W; TO247-3
Polarisation: bipolar
Kind of package: tube
Kind of transistor: Darlington
Case: TO247-3
Type of transistor: PNP
Mounting: THT
Collector current: 15A
Power dissipation: 150W
Collector-emitter voltage: 250V
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.74 EUR |
| 15+ | 5.93 EUR |
| 17+ | 5.22 EUR |
| MBR150RLG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 1V
Max. forward impulse current: 25A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4741ATR |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Kind of package: reel; tape
auf Bestellung 1302 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 500+ | 0.17 EUR |
| 569+ | 0.15 EUR |
| 672+ | 0.13 EUR |
| 981+ | 0.087 EUR |
| 1250+ | 0.068 EUR |
| 1302+ | 0.064 EUR |
| GBPC3510 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS3D2N10MDT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 142A; Idm: 879A; 155W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 48nC
On-state resistance: 3.5mΩ
Gate-source voltage: ±20V
Power dissipation: 155W
Drain current: 142A
Drain-source voltage: 100V
Pulsed drain current: 879A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H858NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; DFN5
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMYS020N08LHTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 30A; Idm: 142A; 21W; LFPAK56
Case: LFPAK56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 19.5mΩ
Gate-source voltage: ±20V
Power dissipation: 21W
Drain current: 30A
Drain-source voltage: 80V
Pulsed drain current: 142A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDBL9403-F085T6 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 79.8W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 79.8W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.95mΩ
Mounting: SMD
Gate charge: 108nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV8774CDT33RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; DPAK4; SMD; Ch: 1
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 3.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8774CDT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; DPAK4; SMD; reel,tape
Kind of package: reel; tape
Application: automotive industry
Case: DPAK4
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Output voltage: 5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MURS240T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Mounting: SMD
Reverse recovery time: 65ns
Max. forward voltage: 1.15V
Max. off-state voltage: 0.4kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 65ns; SMB; Ufmax: 1.15V; reel,tape
Mounting: SMD
Reverse recovery time: 65ns
Max. forward voltage: 1.15V
Max. off-state voltage: 0.4kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTJS3157NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
auf Bestellung 1996 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 404+ | 0.21 EUR |
| 439+ | 0.19 EUR |
| 667+ | 0.13 EUR |
| 944+ | 0.09 EUR |
| 1064+ | 0.08 EUR |
| 1500+ | 0.071 EUR |
| NTJS3151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
On-state resistance: 60mΩ
Power dissipation: 0.625W
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 0.625W
Case: SC70-6; SC88; SOT363
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
On-state resistance: 60mΩ
Power dissipation: 0.625W
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLAS3158MNR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; multiplexer; Ch: 2; WDFN12; 1.65÷5.5VDC; 10uA
Operating temperature: -55...125°C
Technology: CMOS
Case: WDFN12
Kind of integrated circuit: multiplexer
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Type of integrated circuit: analog switch
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| NTZS3151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.21W; SOT563F; ESD
Case: SOT563F
Version: ESD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
On-state resistance: 0.15Ω
Power dissipation: 0.21W
Gate-source voltage: ±8V
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| BAT54S |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
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| 4N25M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
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| NSVBC847BDW1T2G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC847BTT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC143ZDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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| NSVBC857BTT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC114EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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| NSVBC114YDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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| NSVBC114YPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 10kΩ
Quantity in set/package: 4000pcs.
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| NSVBC123JPDXV6T1G |
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 2.2kΩ
Quantity in set/package: 4000pcs.
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| NSVBC124XPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 22kΩ
Quantity in set/package: 4000pcs.
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| NSVBC143TPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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Stück im Wert von UAH
| NSVBC143ZPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 4.7kΩ
Quantity in set/package: 4000pcs.
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| NSVBC144EDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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| NSVBC144EPDXV6T1G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Base-emitter resistor: 47kΩ
Kind of transistor: BRT; complementary pair
Base resistor: 47kΩ
Quantity in set/package: 4000pcs.
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| NSVBC818-40LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBC846BM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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Stück im Wert von UAH
| NSVBC847BLT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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Stück im Wert von UAH
| NSVBC856BM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.265W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.265W
Case: SOT723
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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Stück im Wert von UAH
| NSVBC857BLT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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Stück im Wert von UAH
| NSVBC858AWT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBCH807-25LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBCH817-40LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Frequency: 100MHz
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| NSVBCW32LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NCV1117ST12T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 12V; 1A; SOT223; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| FQP2N40-F080 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 7.2A
Power dissipation: 40W
Gate charge: 5.5nC
Polarisation: unipolar
Drain current: 1.14A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 5.8Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.14A; Idm: 7.2A; 40W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 7.2A
Power dissipation: 40W
Gate charge: 5.5nC
Polarisation: unipolar
Drain current: 1.14A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 5.8Ω
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| MC7915CD2TR4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7900
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; MC7900
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7900
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NSM6056MT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6
Mounting: SMD
Type of transistor: NPN + diode
Kind of package: reel; tape
Case: SC74-6
Power dissipation: 0.38W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 300...100
Frequency: 250MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN + diode; bipolar; 40V; 0.6A; 0.38W; SC74-6
Mounting: SMD
Type of transistor: NPN + diode
Kind of package: reel; tape
Case: SC74-6
Power dissipation: 0.38W
Collector current: 0.6A
Collector-emitter voltage: 40V
Current gain: 300...100
Frequency: 250MHz
Polarisation: bipolar
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| MC74AC32DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MC74AC32DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: AC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: AC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NVTFS4C06NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS4C06NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 69A; Idm: 476A; 30.5W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 69A
Pulsed drain current: 476A
Power dissipation: 30.5W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 69A; Idm: 476A; 30.5W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 69A
Pulsed drain current: 476A
Power dissipation: 30.5W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| NTTFS4C06NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 166A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 166A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS4C06NTWG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 71A; Idm: 367A; 37W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 71A
Pulsed drain current: 367A
Power dissipation: 37W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FJB102TM |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 8A; 80W; D2PAK
Mounting: SMD
Type of transistor: NPN
Collector current: 8A
Power dissipation: 80W
Collector-emitter voltage: 100V
Current gain: 200...20000
Polarisation: bipolar
Case: D2PAK
Kind of transistor: Darlington
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 2.23 EUR |
| 60+ | 1.43 EUR |
| 76+ | 1.12 EUR |
| 100+ | 0.99 EUR |
| SMMSD701T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 70V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 258+ | 0.33 EUR |
| 307+ | 0.27 EUR |
| 385+ | 0.23 EUR |
| NCV21872DMR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Ch: 2; 1.8÷5.5VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Input offset voltage: 0.045mV
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
auf Bestellung 2984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.86 EUR |
| 139+ | 0.62 EUR |
| 152+ | 0.56 EUR |
| 154+ | 0.55 EUR |
| FQA8N90C-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5.1A; Idm: 32A; 240W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 240W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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| FQB8N90CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: QFET®
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| NCP1562ADBR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: TSSOP16
Topology: forward
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: TSSOP16
Topology: forward
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP1562ADR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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| NCP1562BDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; SO16; forward
Type of integrated circuit: PMIC
Input voltage: 100V
Output voltage: 20V
Output current: 1...2.5A
Frequency: 222kHz...1MHz
Mounting: SMD
Case: SO16
Topology: forward
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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