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1N4004G 1N4004G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Mounting: THT
Quantity in set/package: 1000pcs.
Kind of package: bulk
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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6N136VM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Number of pins: 8
Manufacturer series: 6N136M
Max. off-state voltage: 5V
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.89 EUR
200+2.52 EUR
Mindestbestellmenge: 38
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1N4006G 1N4006G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
618+0.12 EUR
930+0.077 EUR
1223+0.058 EUR
1292+0.055 EUR
1345+0.053 EUR
Mindestbestellmenge: 417
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MC74ACT139DG MC74ACT139DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2040D3&compId=MC74AC139-D.pdf?ci_sign=3fb527dd912605fd65cd58b0df3e1b7a3bc2b55d Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
103+0.7 EUR
135+0.53 EUR
143+0.5 EUR
145+0.49 EUR
Mindestbestellmenge: 52
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6N137SM 6N137SM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C009602B2C0D6&compId=4N35SM.pdf?ci_sign=3eaab7f0259a092f322f6e19ac3b19ae03db130c pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C00A397B500D6&compId=6N137SM.pdf?ci_sign=7e56d56cde6cce4ea490ba6ace212c3fc283dc02 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Transfer rate: 10Mbps
Manufacturer series: 6N137M
auf Bestellung 1369 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
72+1 EUR
91+0.79 EUR
96+0.75 EUR
100+0.72 EUR
Mindestbestellmenge: 51
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FQD8P10TM FQD8P10TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199B3E6B4C1E259&compId=FQD8P10.pdf?ci_sign=cf93f786965b4dedd012e67ddd2914a2fa9c55d1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2059 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
93+0.78 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 73
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DTA115EET1G DTA115EET1G ONSEMI dta115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
544+0.13 EUR
879+0.081 EUR
1651+0.043 EUR
1749+0.041 EUR
6000+0.039 EUR
Mindestbestellmenge: 334
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6N136SM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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KSA1298YMTF KSA1298YMTF ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE2DE4E506540D6&compId=KSA1298.PDF?ci_sign=3f00d0a44fadb11b5c53cb7c184226605f0235aa Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2004 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
451+0.16 EUR
685+0.1 EUR
1673+0.043 EUR
1767+0.04 EUR
Mindestbestellmenge: 278
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FXMA2104UMX FXMA2104UMX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CC52C48D820&compId=FXMA2104UMX.pdf?ci_sign=7c0f95d4bc8386e736e4aa212eaef2a0fc8a85df Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 3657 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99
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1N4005G 1N4005G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Mounting: THT
Case: CASE59
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Quantity in set/package: 1000pcs.
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.26 EUR
388+0.18 EUR
487+0.15 EUR
706+0.1 EUR
1484+0.048 EUR
1568+0.046 EUR
Mindestbestellmenge: 278
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FSUSB242GEVB ONSEMI Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
1+156.5 EUR
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UF4007 UF4007 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784F0257FC3EB6745&compId=UF4001.pdf?ci_sign=9cdb30857d0068df0f61039939874202b298f335 Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
auf Bestellung 1711 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
242+0.3 EUR
410+0.17 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 148
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FGH40N60SMD-F085 ONSEMI fgh40n60smd_f085-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGAF40N60SMD ONSEMI fgaf40n60smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGAF40N60UFTU ONSEMI fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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FGB20N60SFD-F085 ONSEMI fgb20n60s_f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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FGA40N65SMD ONSEMI fga40n65smd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGH60T65SHD-F155 ONSEMI fgh60t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH60T65SQD-F155 ONSEMI fgh60t65sqd-f155-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGA40T65SHD ONSEMI fga40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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FGB40T65SPD-F085 FGB40T65SPD-F085 ONSEMI fgb40t65spd-f085-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Type of transistor: IGBT
Application: ignition systems
Power dissipation: 134W
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
Mounting: SMD
Case: D2PAK
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.78 EUR
18+4.15 EUR
19+3.93 EUR
100+3.88 EUR
250+3.78 EUR
Mindestbestellmenge: 15
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FGH40T65SHD-F155 ONSEMI fgh40t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH40T65SHDF-F155 ONSEMI fgh40t65shdf-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH40T65SQD-F155 ONSEMI fgh40t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGHL40T65MQD ONSEMI fghl40t65mqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGHL40T65MQDT ONSEMI fghl40t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
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TL431ACDG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
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TL431ACDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
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TL431ACLPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ACLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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SS36 SS36 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 2163 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
137+0.52 EUR
186+0.38 EUR
197+0.36 EUR
250+0.35 EUR
Mindestbestellmenge: 122
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TL431AIDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431BCDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431BCLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431BILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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FAN3100TSX FAN3100TSX ONSEMI fan3100t-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -2.5...1.8A
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
auf Bestellung 3009 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
65+1.11 EUR
94+0.77 EUR
99+0.73 EUR
250+0.7 EUR
Mindestbestellmenge: 48
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FGH40T120SQDNL4 ONSEMI fgh40t120sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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FGHL40T120RWD ONSEMI fghl40t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGHL40T120SWD ONSEMI fghl40t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH50T65UPD ONSEMI fgh50t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 230nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 150A
Type of transistor: IGBT
Produkt ist nicht verfügbar
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FGHL50T65LQDT ONSEMI fghl50t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 509nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
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FGHL50T65MQD ONSEMI FGHL50T65MQD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 94nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
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FGHL50T65MQDT ONSEMI fghl50t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
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FGHL50T65SQDT ONSEMI fghl50t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99.7nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
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FQA36P15 FQA36P15 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199ED168956E259&compId=FQA36P15.pdf?ci_sign=fa3a3500e7a79aea12f71197ef03a33c5723b741 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.29 EUR
16+4.75 EUR
20+3.75 EUR
21+3.53 EUR
120+3.52 EUR
Mindestbestellmenge: 14
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TL431CDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431CLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431CLPRPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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TL431ILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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NL27WZ14DTT1G NL27WZ14DTT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9EA0C7&compId=NL27WZ14DTT1G.pdf?ci_sign=0ebe6fe7f41059d6227136d2abd3695b54e64249 Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Kind of input: with Schmitt trigger
Kind of gate: NOT
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
225+0.32 EUR
363+0.2 EUR
447+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 179
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1N4937RLG 1N4937RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
455+0.16 EUR
538+0.13 EUR
794+0.09 EUR
926+0.077 EUR
1122+0.064 EUR
1200+0.06 EUR
1266+0.056 EUR
1320+0.054 EUR
Mindestbestellmenge: 334
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MPSA42 MPSA42 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD16ACED0932469&compId=MMBTA42.pdf?ci_sign=d0f278944933b99d2d9c5920cc335dd65965ed04 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
auf Bestellung 4313 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
321+0.22 EUR
550+0.13 EUR
625+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 200
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FGY140T120SWD ONSEMI fgy140t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH4L40T120LQD ONSEMI fgh4l40t120lqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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TL431IDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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1N4733A 1N4733A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Leakage current: 10µA
auf Bestellung 976 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
400+0.18 EUR
498+0.14 EUR
819+0.087 EUR
976+0.073 EUR
Mindestbestellmenge: 250
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1N4749A 1N4749A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 2201 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
338+0.21 EUR
537+0.13 EUR
663+0.11 EUR
1443+0.05 EUR
1526+0.047 EUR
Mindestbestellmenge: 239
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1N4933G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92 Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Produkt ist nicht verfügbar
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FDG6335N FDG6335N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF225B70BA1E28&compId=FDG6335N.pdf?ci_sign=0eb5f0294b8975f49c17aba4e9359e5b82bbaf06 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.7A
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
111+0.65 EUR
143+0.5 EUR
232+0.31 EUR
244+0.29 EUR
Mindestbestellmenge: 76
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1N4004G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4004G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Case: CASE59
Mounting: THT
Quantity in set/package: 1000pcs.
Kind of package: bulk
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Produkt ist nicht verfügbar
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6N136VM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; Urmax: 5V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Number of pins: 8
Manufacturer series: 6N136M
Max. off-state voltage: 5V
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+2.89 EUR
200+2.52 EUR
Mindestbestellmenge: 38
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1N4006G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4006G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
618+0.12 EUR
930+0.077 EUR
1223+0.058 EUR
1292+0.055 EUR
1345+0.053 EUR
Mindestbestellmenge: 417
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MC74ACT139DG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2040D3&compId=MC74AC139-D.pdf?ci_sign=3fb527dd912605fd65cd58b0df3e1b7a3bc2b55d
MC74ACT139DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: tube
Operating temperature: -40...85°C
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
103+0.7 EUR
135+0.53 EUR
143+0.5 EUR
145+0.49 EUR
Mindestbestellmenge: 52
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6N137SM pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C009602B2C0D6&compId=4N35SM.pdf?ci_sign=3eaab7f0259a092f322f6e19ac3b19ae03db130c pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C00A397B500D6&compId=6N137SM.pdf?ci_sign=7e56d56cde6cce4ea490ba6ace212c3fc283dc02
6N137SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; 5kV; 10Mbps; Gull wing 8; 6N137M
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Case: Gull wing 8
Turn-on time: 30ns
Turn-off time: 30ns
Transfer rate: 10Mbps
Manufacturer series: 6N137M
auf Bestellung 1369 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
72+1 EUR
91+0.79 EUR
96+0.75 EUR
100+0.72 EUR
Mindestbestellmenge: 51
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FQD8P10TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199B3E6B4C1E259&compId=FQD8P10.pdf?ci_sign=cf93f786965b4dedd012e67ddd2914a2fa9c55d1
FQD8P10TM
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2059 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
93+0.78 EUR
146+0.49 EUR
154+0.46 EUR
1000+0.45 EUR
Mindestbestellmenge: 73
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DTA115EET1G dta115e-d.pdf
DTA115EET1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 80...150
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
544+0.13 EUR
879+0.081 EUR
1651+0.043 EUR
1749+0.041 EUR
6000+0.039 EUR
Mindestbestellmenge: 334
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6N136SM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
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KSA1298YMTF pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE2DE4E506540D6&compId=KSA1298.PDF?ci_sign=3f00d0a44fadb11b5c53cb7c184226605f0235aa
KSA1298YMTF
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.8A; 0.2W; SOT23,TO236AB
Case: SOT23; TO236AB
Frequency: 120MHz
Collector-emitter voltage: 25V
Current gain: 100...320
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
auf Bestellung 2004 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
451+0.16 EUR
685+0.1 EUR
1673+0.043 EUR
1767+0.04 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
FXMA2104UMX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5CC52C48D820&compId=FXMA2104UMX.pdf?ci_sign=7c0f95d4bc8386e736e4aa212eaef2a0fc8a85df
FXMA2104UMX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.65÷5.5VDC; SMD; MLP12; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 4
Case: MLP12
Number of inputs: 4
Number of outputs: 4
Supply voltage: 1.65...5.5V DC
Frequency: 26MHz
Kind of output: open drain
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 3657 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
100+0.72 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
1N4005G pVersion=0046&contRep=ZT&docId=005056AB752F1EE787B9E30552596745&compId=1N4001-D.PDF?ci_sign=79133378f6429bee6ecfe94d7aad987cabef7b90
1N4005G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Mounting: THT
Case: CASE59
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Quantity in set/package: 1000pcs.
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
278+0.26 EUR
388+0.18 EUR
487+0.15 EUR
706+0.1 EUR
1484+0.048 EUR
1568+0.046 EUR
Mindestbestellmenge: 278
Im Einkaufswagen  Stück im Wert von  UAH
FSUSB242GEVB
Hersteller: ONSEMI
Category: Unclassified
Description: FSUSB242GEVB
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+156.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
UF4007 pVersion=0046&contRep=ZT&docId=005056AB752F1EE784F0257FC3EB6745&compId=UF4001.pdf?ci_sign=9cdb30857d0068df0f61039939874202b298f335
UF4007
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; DO41; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 75µA
Power dissipation: 2.08W
Capacitance: 17pF
auf Bestellung 1711 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
242+0.3 EUR
410+0.17 EUR
544+0.13 EUR
575+0.12 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
FGH40N60SMD-F085 fgh40n60smd_f085-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Power dissipation: 174W
Case: TO247-3
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60SMD fgaf40n60smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 58W; TO3PF
Type of transistor: IGBT
Power dissipation: 58W
Case: TO3PF
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Collector current: 40A
Pulsed collector current: 120A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGAF40N60UFTU fgaf40n60uf-d.pdf FAIRS46118-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 40W; TO3PF
Type of transistor: IGBT
Power dissipation: 40W
Case: TO3PF
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Collector current: 20A
Pulsed collector current: 160A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGB20N60SFD-F085 fgb20n60s_f085-d.pdf
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 83W; D2PAK; Features: logic level; ESD
Type of transistor: IGBT
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 63nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 60A
Application: ignition systems
Version: ESD
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40N65SMD fga40n65smd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 174W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 174W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SHD-F155 fgh60t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SQD-F155 fgh60t65sqd-f155-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 167W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 167W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGA40T65SHD fga40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGB40T65SPD-F085 fgb40t65spd-f085-d.pdf
FGB40T65SPD-F085
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; D2PAK; Features: logic level
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 120A
Type of transistor: IGBT
Application: ignition systems
Power dissipation: 134W
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Gate charge: 36nC
Mounting: SMD
Case: D2PAK
auf Bestellung 767 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
18+4.15 EUR
19+3.93 EUR
100+3.88 EUR
250+3.78 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 fgh40t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 72.2nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHDF-F155 fgh40t65shdf-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SQD-F155 fgh40t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQD fghl40t65mqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T65MQDT fghl40t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACDG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Kind of package: tube
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Maximum output current: 0.1A
Operating voltage: 2.495...36V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ACLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SS36 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BC8336EF0D4460C4&compId=SS32_SS39.pdf?ci_sign=8fa34ffef8d0a5973b77e4f15c0e2810f8a6bada
SS36
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 2163 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
137+0.52 EUR
186+0.38 EUR
197+0.36 EUR
250+0.35 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
TL431AIDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BILPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN3100TSX fan3100t-d.pdf
FAN3100TSX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -2.5...1.8A
Type of integrated circuit: driver
Impulse rise time: 20ns
Pulse fall time: 14ns
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
auf Bestellung 3009 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
65+1.11 EUR
94+0.77 EUR
99+0.73 EUR
250+0.7 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T120SQDNL4 fgh40t120sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120RWD fghl40t120rwd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120SWD fghl40t120swd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH50T65UPD fgh50t65upd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 230nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 150A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65LQDT fghl50t65lqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 509nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65MQD FGHL50T65MQD-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 94nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65MQDT fghl50t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65SQDT fghl50t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99.7nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQA36P15 pVersion=0046&contRep=ZT&docId=005056AB752F1ED78199ED168956E259&compId=FQA36P15.pdf?ci_sign=fa3a3500e7a79aea12f71197ef03a33c5723b741
FQA36P15
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.29 EUR
16+4.75 EUR
20+3.75 EUR
21+3.53 EUR
120+3.52 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
TL431CDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRPG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ILPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ14DTT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE0491F7A9EA0C7&compId=NL27WZ14DTT1G.pdf?ci_sign=0ebe6fe7f41059d6227136d2abd3695b54e64249
NL27WZ14DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Kind of input: with Schmitt trigger
Kind of gate: NOT
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
225+0.32 EUR
363+0.2 EUR
447+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
1N4937RLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92
1N4937RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
455+0.16 EUR
538+0.13 EUR
794+0.09 EUR
926+0.077 EUR
1122+0.064 EUR
1200+0.06 EUR
1266+0.056 EUR
1320+0.054 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
MPSA42 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD16ACED0932469&compId=MMBTA42.pdf?ci_sign=d0f278944933b99d2d9c5920cc335dd65965ed04
MPSA42
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
auf Bestellung 4313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
321+0.22 EUR
550+0.13 EUR
625+0.11 EUR
685+0.1 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
FGY140T120SWD fgy140t120swd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH4L40T120LQD fgh4l40t120lqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431IDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4733A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4733A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Leakage current: 10µA
auf Bestellung 976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
400+0.18 EUR
498+0.14 EUR
819+0.087 EUR
976+0.073 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N4749A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4749A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 2201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
338+0.21 EUR
537+0.13 EUR
663+0.11 EUR
1443+0.05 EUR
1526+0.047 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
1N4933G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDG6335N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECF225B70BA1E28&compId=FDG6335N.pdf?ci_sign=0eb5f0294b8975f49c17aba4e9359e5b82bbaf06
FDG6335N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.7A
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
111+0.65 EUR
143+0.5 EUR
232+0.31 EUR
244+0.29 EUR
Mindestbestellmenge: 76
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