Foto | Bezeichnung | Hersteller | Beschreibung |
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MC74VHC573DTR2G | ONSEMI |
![]() Description: IC: digital; D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; TSSOP20; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Kind of package: reel; tape Trigger: level-triggered Quiescent current: 40µA |
auf Bestellung 2138 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L020N120SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 408A Power dissipation: 255W Case: TO247-4 On-state resistance: 28mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Gate-source voltage: -15...25V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14060BDR2G | ONSEMI |
![]() Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Technology: CMOS Mounting: SMD Case: SO16 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MC14060BDTR2G | ONSEMI |
![]() Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS Type of integrated circuit: digital Kind of integrated circuit: 14bit; binary counter; oscillator Number of channels: 1 Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FQB47P06TM-AM002 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 736 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB55N10TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.9A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD11P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14504BDG | ONSEMI |
![]() ![]() Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5929BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode Manufacturer series: 1SMB59xxBT3G Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 3W Zener voltage: 15V |
auf Bestellung 2551 Stücke: Lieferzeit 14-21 Tag (e) |
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NL27WZ16DTT1G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C Case: TSOP6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 1224 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTA55LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 1619 Stücke: Lieferzeit 14-21 Tag (e) |
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CAV93C56VE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: Microwire Memory organisation: 256x8/128x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBTA63LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
auf Bestellung 1765 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86252L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2709 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14082BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 4 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: dual; 2 Family: HEF4000B |
auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14082BDR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 4 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: dual; 2 Family: HEF4000B |
auf Bestellung 2355 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCXU04DG | ONSEMI |
![]() Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCXU Integrated circuit features: tolerates a voltage of 5V on the inputs |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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CAT25512HU5I-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 64kx8bit Access time: 40ns Clock frequency: 20MHz Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 1.8...5.5V Memory: 512kb EEPROM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C64DTVLT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C64DWVLT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C64MUW3VLTBG | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NV24C64UVLT2G | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV24C64WE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CAV24C64YE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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74VHC273MTCX | ONSEMI |
![]() Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
auf Bestellung 1730 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAV70LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC3053M | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3053M |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14511BDG | ONSEMI |
![]() Description: IC: digital; BCD to 7-segment,decoder,driver,latch; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Supply voltage: 3...18V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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RFD14N05SM9A | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 7808 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX16501MTDX | ONSEMI |
![]() Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX Type of integrated circuit: digital Kind of integrated circuit: 18bit; bus transceiver Number of channels: 18 Technology: CMOS Mounting: SMD Case: TSSOP56 Operating temperature: -40...85°C Supply voltage: 1.5...3.6V DC Family: LCX Kind of package: reel; tape Integrated circuit features: 5V tolerant on inputs/outputs Manufacturer series: LCX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SBC847BLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 1453 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVB2045EMFST1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry Max. forward voltage: 0.64V Max. load current: 40A Max. forward impulse current: 0.4kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
NRVB2045EMFST3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry Max. forward voltage: 0.64V Max. load current: 40A Max. forward impulse current: 0.4kA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BVSS123LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Case: SOT23 On-state resistance: 6Ω Gate-source voltage: ±20V Power dissipation: 0.225W Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1865 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS35 | ONSEMI |
![]() Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Capacitance: 35pF Reverse recovery time: 50ns Case: SOT23 Max. forward impulse current: 2A Load current: 0.2A Power dissipation: 0.35W Semiconductor structure: common anode; double Max. forward voltage: 1.25V Max. off-state voltage: 120V Kind of package: reel; tape Type of diode: switching |
auf Bestellung 973 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14504BDR2G | ONSEMI |
![]() ![]() Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 |
auf Bestellung 1830 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14025BDR2G | ONSEMI |
![]() Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: triple; 3 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHCT125ADTRG | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Quiescent current: 40µA Manufacturer series: VHCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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KST10MTF | ONSEMI |
![]() Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Mounting: SMD Case: SOT23 Type of transistor: NPN Kind of transistor: RF Power dissipation: 0.35W Collector-emitter voltage: 25V Current gain: 60 Frequency: 650MHz Kind of package: reel; tape Polarisation: bipolar |
auf Bestellung 1125 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5089LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 50mA Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 400...1200 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC244DTG | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Kind of package: tube Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC244DTR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74VHC244DWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX84C4V7LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 3µA |
auf Bestellung 13489 Stücke: Lieferzeit 14-21 Tag (e) |
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ADP3120AJRZ-RL | ONSEMI |
![]() Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 4.6...13.2V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -20...150°C Impulse rise time: 20ns Pulse fall time: 11ns Kind of package: reel; tape Protection: overheating OTP; undervoltage UVP Voltage class: 35V |
auf Bestellung 746 Stücke: Lieferzeit 14-21 Tag (e) |
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KSC2073TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Frequency: 4MHz Collector-emitter voltage: 150V Current gain: 40...140 Collector current: 1.5A Type of transistor: NPN Power dissipation: 25W Polarisation: bipolar |
auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS12100XV6T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.65W Collector current: 1A Collector-emitter voltage: 12V Current gain: 100 Application: automotive industry Polarisation: bipolar |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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BSR16 | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Mounting: SMD Polarisation: bipolar Type of transistor: PNP Collector current: 0.8A Power dissipation: 0.35W Collector-emitter voltage: 60V Frequency: 300MHz Kind of package: reel; tape Case: SOT23; TO236AB |
auf Bestellung 726 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14081BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: AND Kind of package: tube Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14081BDTR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Case: TSSOP14 Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL4503M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Slew rate: 10kV/μs CTR@If: 19-50%@16mA Transfer rate: 1Mbps Manufacturer series: HCPL4503M |
auf Bestellung 906 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14557BDWG | ONSEMI |
![]() Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: shift register Supply voltage: 3...18V DC Case: SO16WB Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Number of channels: 1 Number of inputs: 12 Technology: CMOS |
Produkt ist nicht verfügbar |
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FDMS86101 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 104W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FCMT299N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.9A Power dissipation: 125W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.299Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A Gate charge: 51nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SBCP56-10T1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
auf Bestellung 181 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16HT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD323 Max. forward voltage: 1.75V Max. forward impulse current: 36A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry Max. load current: 1A |
auf Bestellung 840 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74ACT125DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Manufacturer series: ACT |
auf Bestellung 2268 Stücke: Lieferzeit 14-21 Tag (e) |
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FAN3111ESX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -0.9...1.1A Pulse fall time: 17ns Impulse rise time: 18ns Mounting: SMD Number of channels: 1 Supply voltage: 4.5...18V DC Kind of integrated circuit: low-side; MOSFET gate driver Type of integrated circuit: driver |
auf Bestellung 1528 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP361SNT1G | ONSEMI |
![]() Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Kind of output: transistor Input voltage: 1.2...20V Threshold on-voltage: 3V Application: USB |
auf Bestellung 1950 Stücke: Lieferzeit 14-21 Tag (e) |
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FIN1002M5X | ONSEMI |
![]() Description: IC: digital; line receiver,differential,translator; LVDS; SMD Technology: LVDS Type of integrated circuit: digital Kind of package: tube Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Supply voltage: 3...3.6V DC Case: SOT23-5 Kind of integrated circuit: differential; line receiver; translator |
auf Bestellung 1710 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC573DTR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; TSSOP20; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Kind of package: reel; tape
Trigger: level-triggered
Quiescent current: 40µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; TSSOP20; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Kind of package: reel; tape
Trigger: level-triggered
Quiescent current: 40µA
auf Bestellung 2138 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
94+ | 0.76 EUR |
104+ | 0.69 EUR |
133+ | 0.54 EUR |
141+ | 0.51 EUR |
NTH4L020N120SC1 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -15...25V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Gate-source voltage: -15...25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14060BDR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Technology: CMOS
Mounting: SMD
Case: SO16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14060BDTR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter; oscillator
Number of channels: 1
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FQB47P06TM-AM002 |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 736 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.08 EUR |
24+ | 3 EUR |
26+ | 2.83 EUR |
50+ | 2.73 EUR |
FQB55N10TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.49 EUR |
34+ | 2.16 EUR |
39+ | 1.84 EUR |
41+ | 1.74 EUR |
50+ | 1.7 EUR |
FQD11P06TM |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
43+ | 1.69 EUR |
55+ | 1.31 EUR |
62+ | 1.16 EUR |
95+ | 0.76 EUR |
100+ | 0.72 EUR |
250+ | 0.71 EUR |
500+ | 0.69 EUR |
MC14504BDG | ![]() |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
75+ | 0.96 EUR |
84+ | 0.86 EUR |
103+ | 0.7 EUR |
107+ | 0.67 EUR |
1SMB5929BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Manufacturer series: 1SMB59xxBT3G
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 15V
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Manufacturer series: 1SMB59xxBT3G
Mounting: SMD
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 3W
Zener voltage: 15V
auf Bestellung 2551 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
256+ | 0.28 EUR |
304+ | 0.24 EUR |
435+ | 0.16 EUR |
496+ | 0.14 EUR |
538+ | 0.13 EUR |
NL27WZ16DTT1G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 1224 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
229+ | 0.31 EUR |
281+ | 0.25 EUR |
388+ | 0.18 EUR |
424+ | 0.17 EUR |
MMBTA55LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 1619 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
758+ | 0.094 EUR |
906+ | 0.079 EUR |
1163+ | 0.061 EUR |
1619+ | 0.044 EUR |
CAV93C56VE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMBTA63LT1G |
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Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 1765 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
481+ | 0.15 EUR |
830+ | 0.086 EUR |
1765+ | 0.04 EUR |
FDMS86252L |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2709 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.15 EUR |
29+ | 2.52 EUR |
33+ | 2.2 EUR |
47+ | 1.54 EUR |
50+ | 1.46 EUR |
100+ | 1.43 EUR |
250+ | 1.42 EUR |
MC14082BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
143+ | 0.5 EUR |
200+ | 0.36 EUR |
221+ | 0.32 EUR |
239+ | 0.3 EUR |
317+ | 0.23 EUR |
336+ | 0.21 EUR |
MC14082BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 4
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: dual; 2
Family: HEF4000B
auf Bestellung 2355 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
212+ | 0.34 EUR |
242+ | 0.3 EUR |
288+ | 0.25 EUR |
305+ | 0.23 EUR |
MC74LCXU04DG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCXU
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCXU
Integrated circuit features: tolerates a voltage of 5V on the inputs
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
110+ | 0.65 EUR |
141+ | 0.51 EUR |
164+ | 0.44 EUR |
171+ | 0.42 EUR |
174+ | 0.41 EUR |
181+ | 0.4 EUR |
CAT25512HU5I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 40ns
Clock frequency: 20MHz
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 40ns
Clock frequency: 20MHz
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Produkt ist nicht verfügbar
Im Einkaufswagen
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NV24C64DTVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C64DWVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C64MUW3VLTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV24C64UVLT2G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV24C64WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAV24C64YE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
74VHC273MTCX |
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Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
auf Bestellung 1730 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
107+ | 0.67 EUR |
119+ | 0.6 EUR |
139+ | 0.51 EUR |
147+ | 0.49 EUR |
500+ | 0.48 EUR |
SBAV70LT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
736+ | 0.097 EUR |
1017+ | 0.07 EUR |
1171+ | 0.061 EUR |
1183+ | 0.06 EUR |
1251+ | 0.057 EUR |
MOC3053M |
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Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC14511BDG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Supply voltage: 3...18V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
RFD14N05SM9A |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7808 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
124+ | 0.58 EUR |
130+ | 0.55 EUR |
133+ | 0.54 EUR |
74LCX16501MTDX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 18bit; bus transceiver
Number of channels: 18
Technology: CMOS
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Family: LCX
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 18bit; bus transceiver
Number of channels: 18
Technology: CMOS
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Family: LCX
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LCX
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBC847BLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 1453 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
511+ | 0.14 EUR |
743+ | 0.096 EUR |
1049+ | 0.068 EUR |
1109+ | 0.064 EUR |
NRVB2045EMFST1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 0.4kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 0.4kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NRVB2045EMFST3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 0.4kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 0.64V
Max. load current: 40A
Max. forward impulse current: 0.4kA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BVSS123LT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Case: SOT23
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 0.225W
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.17A
Case: SOT23
On-state resistance: 6Ω
Gate-source voltage: ±20V
Power dissipation: 0.225W
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1865 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
204+ | 0.35 EUR |
241+ | 0.3 EUR |
443+ | 0.16 EUR |
658+ | 0.11 EUR |
705+ | 0.1 EUR |
1000+ | 0.099 EUR |
BAS35 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 2A
Load current: 0.2A
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Capacitance: 35pF
Reverse recovery time: 50ns
Case: SOT23
Max. forward impulse current: 2A
Load current: 0.2A
Power dissipation: 0.35W
Semiconductor structure: common anode; double
Max. forward voltage: 1.25V
Max. off-state voltage: 120V
Kind of package: reel; tape
Type of diode: switching
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
228+ | 0.31 EUR |
278+ | 0.26 EUR |
305+ | 0.23 EUR |
343+ | 0.21 EUR |
414+ | 0.17 EUR |
511+ | 0.14 EUR |
538+ | 0.13 EUR |
MC14504BDR2G | ![]() |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
auf Bestellung 1830 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
75+ | 0.96 EUR |
88+ | 0.82 EUR |
108+ | 0.66 EUR |
114+ | 0.63 EUR |
250+ | 0.61 EUR |
MC14025BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
173+ | 0.41 EUR |
193+ | 0.37 EUR |
236+ | 0.3 EUR |
250+ | 0.29 EUR |
MC74VHCT125ADTRG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHCT
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Manufacturer series: VHCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KST10MTF |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Mounting: SMD
Case: SOT23
Type of transistor: NPN
Kind of transistor: RF
Power dissipation: 0.35W
Collector-emitter voltage: 25V
Current gain: 60
Frequency: 650MHz
Kind of package: reel; tape
Polarisation: bipolar
auf Bestellung 1125 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
618+ | 0.12 EUR |
958+ | 0.075 EUR |
1125+ | 0.063 EUR |
MMBT5089LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 400...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 400...1200
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
483+ | 0.14 EUR |
MC74VHC244DTG |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: tube
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74VHC244DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74VHC244DWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Manufacturer series: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX84C4V7LT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
auf Bestellung 13489 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
736+ | 0.097 EUR |
962+ | 0.074 EUR |
1137+ | 0.063 EUR |
1701+ | 0.042 EUR |
2025+ | 0.035 EUR |
2907+ | 0.025 EUR |
3334+ | 0.021 EUR |
5000+ | 0.014 EUR |
ADP3120AJRZ-RL |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
auf Bestellung 746 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
57+ | 1.26 EUR |
104+ | 0.69 EUR |
117+ | 0.61 EUR |
146+ | 0.49 EUR |
155+ | 0.46 EUR |
KSC2073TU |
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Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector-emitter voltage: 150V
Current gain: 40...140
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 25W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Collector-emitter voltage: 150V
Current gain: 40...140
Collector current: 1.5A
Type of transistor: NPN
Power dissipation: 25W
Polarisation: bipolar
auf Bestellung 186 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.12 EUR |
83+ | 0.87 EUR |
117+ | 0.61 EUR |
124+ | 0.58 EUR |
NSS12100XV6T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.65W
Collector current: 1A
Collector-emitter voltage: 12V
Current gain: 100
Application: automotive industry
Polarisation: bipolar
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 8.94 EUR |
BSR16 |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Mounting: SMD
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
Case: SOT23; TO236AB
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Mounting: SMD
Polarisation: bipolar
Type of transistor: PNP
Collector current: 0.8A
Power dissipation: 0.35W
Collector-emitter voltage: 60V
Frequency: 300MHz
Kind of package: reel; tape
Case: SOT23; TO236AB
auf Bestellung 726 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
183+ | 0.39 EUR |
268+ | 0.27 EUR |
317+ | 0.23 EUR |
569+ | 0.13 EUR |
603+ | 0.12 EUR |
MC14081BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: tube
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
133+ | 0.54 EUR |
149+ | 0.48 EUR |
175+ | 0.41 EUR |
183+ | 0.39 EUR |
275+ | 0.37 EUR |
MC14081BDTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: TSSOP14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: TSSOP14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
108+ | 0.66 EUR |
132+ | 0.54 EUR |
205+ | 0.35 EUR |
217+ | 0.33 EUR |
HCPL4503M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 10kV/μs
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Manufacturer series: HCPL4503M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 10kV/μs
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Manufacturer series: HCPL4503M
auf Bestellung 906 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.59 EUR |
44+ | 1.63 EUR |
47+ | 1.54 EUR |
50+ | 1.49 EUR |
MC14557BDWG |
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Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Number of channels: 1
Number of inputs: 12
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86101 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 104W; PQFN8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCMT299N60 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.9A; Idm: 36A; 125W; Power88
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.9A
Power dissipation: 125W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SBCP56-10T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
181+ | 0.4 EUR |
SBAS16HT1G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD323; Ufmax: 1.75V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD323
Max. forward voltage: 1.75V
Max. forward impulse current: 36A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Max. load current: 1A
auf Bestellung 840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
542+ | 0.13 EUR |
840+ | 0.086 EUR |
MC74ACT125DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; ACT; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: ACT
auf Bestellung 2268 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
166+ | 0.43 EUR |
186+ | 0.38 EUR |
206+ | 0.35 EUR |
214+ | 0.33 EUR |
500+ | 0.32 EUR |
FAN3111ESX |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -0.9...1.1A
Pulse fall time: 17ns
Impulse rise time: 18ns
Mounting: SMD
Number of channels: 1
Supply voltage: 4.5...18V DC
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -0.9...1.1A
Pulse fall time: 17ns
Impulse rise time: 18ns
Mounting: SMD
Number of channels: 1
Supply voltage: 4.5...18V DC
Kind of integrated circuit: low-side; MOSFET gate driver
Type of integrated circuit: driver
auf Bestellung 1528 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
49+ | 1.47 EUR |
76+ | 0.95 EUR |
93+ | 0.77 EUR |
122+ | 0.59 EUR |
129+ | 0.56 EUR |
200+ | 0.54 EUR |
NCP361SNT1G |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of output: transistor
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Application: USB
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of output: transistor
Input voltage: 1.2...20V
Threshold on-voltage: 3V
Application: USB
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
107+ | 0.67 EUR |
129+ | 0.56 EUR |
141+ | 0.51 EUR |
152+ | 0.47 EUR |
161+ | 0.45 EUR |
FIN1002M5X |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Case: SOT23-5
Kind of integrated circuit: differential; line receiver; translator
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Technology: LVDS
Type of integrated circuit: digital
Kind of package: tube
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 3...3.6V DC
Case: SOT23-5
Kind of integrated circuit: differential; line receiver; translator
auf Bestellung 1710 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
87+ | 0.83 EUR |
106+ | 0.68 EUR |
126+ | 0.57 EUR |
134+ | 0.54 EUR |
139+ | 0.52 EUR |