Foto | Bezeichnung | Hersteller | Beschreibung |
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BAS16XV2T5G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOD523 Max. forward voltage: 0.715V Max. forward impulse current: 0.5A Power dissipation: 0.2W Kind of package: reel; tape |
auf Bestellung 1810 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP5181DR2G | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.2...1.4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 60ns Pulse fall time: 40ns Kind of package: reel; tape Protection: undervoltage UVP Voltage class: 600V |
auf Bestellung 1770 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74VHC1G04DTT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Family: VHC Number of inputs: 1 |
auf Bestellung 1633 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54LT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 7.6pF Reverse recovery time: 5ns Power dissipation: 0.2W Max. forward impulse current: 0.6A |
auf Bestellung 9218 Stücke: Lieferzeit 14-21 Tag (e) |
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MC1413BDG | ONSEMI |
![]() Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7 Type of integrated circuit: driver Kind of integrated circuit: darlington; transistor array Case: SO16 Output current: 0.5A Output voltage: 50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 30V Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NL27WZ07DTT1G | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C Case: TSOP6 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 202 Stücke: Lieferzeit 14-21 Tag (e) |
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FXL5T244BQX | ONSEMI |
![]() Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 5 Case: DQFN14 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 5 Number of inputs: 5 |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR20L45CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.47V Max. load current: 20A Max. forward impulse current: 180A Kind of package: tube Heatsink thickness: 1.15...1.39mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FDMS86520 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Pulsed drain current: 80A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCP51460SN33T1G | ONSEMI |
![]() Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 3.3V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: 0...100°C Kind of package: reel; tape Maximum output current: 20mA Operating voltage: 4.2...28V |
auf Bestellung 3122 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14073BDG | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Case: SO14 Kind of package: tube Mounting: SMD Number of channels: triple; 3 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Kind of gate: AND Family: HEF4000B Technology: CMOS |
auf Bestellung 434 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14073BDR2G | ONSEMI |
![]() Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Case: SO14 Kind of package: reel; tape Mounting: SMD Number of channels: triple; 3 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 3 Supply voltage: 3...18V DC Kind of gate: AND Family: HEF4000B Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 14052 Stücke: Lieferzeit 14-21 Tag (e) |
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74FST3257MNTWG | ONSEMI |
![]() Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Kind of package: reel; tape Quiescent current: 3µA Number of channels: 4 Supply voltage: 4...5.5V DC Kind of integrated circuit: demultiplexer; multiplexer Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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DF10M | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A Max. off-state voltage: 1kV Case: MDIP4L Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Electrical mounting: THT Kind of package: tube Load current: 1.5A Max. forward voltage: 1.1V Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BZX79C2V4 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1mA Manufacturer series: BZX79C |
auf Bestellung 2091 Stücke: Lieferzeit 14-21 Tag (e) |
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FSUSB42MUX | ONSEMI |
![]() Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Case: MSOP10 Supply voltage: 2.4...4.4V DC Mounting: SMD Operating temperature: -40...85°C Number of channels: 2 Kind of output: DPDT |
auf Bestellung 3244 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC86MTCX | ONSEMI |
![]() ![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Family: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
74AC86SCX | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SOIC14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74AC86DR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Technology: CMOS Type of integrated circuit: digital Case: SOIC14 Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of gate: XOR Operating temperature: -40...85°C Supply voltage: 2...6V DC Number of inputs: 2 Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MC74AC86DTR2G | ONSEMI |
![]() Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Technology: CMOS Type of integrated circuit: digital Case: TSSOP14 Number of channels: 4 Kind of package: reel; tape Mounting: SMD Kind of gate: XOR Operating temperature: -40...85°C Supply voltage: 2...6V DC Number of inputs: 2 Family: AC Manufacturer series: AC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BZX79C9V1 | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: BZX79C |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1B | ONSEMI |
![]() Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Leakage current: 0.1mA Capacitance: 7pF Reverse recovery time: 15ns Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 0.92V Load current: 1A Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 100V Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Mounting: SMD |
auf Bestellung 3447 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE15035G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB Polarisation: bipolar Kind of package: tube Case: TO220AB Mounting: THT Type of transistor: PNP Power dissipation: 50W Collector current: 4A Collector-emitter voltage: 350V Frequency: 30MHz |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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MC78LC50NTRG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.038V Output voltage: 5V Output current: 0.1A Case: TSOP5 Mounting: SMD Manufacturer series: MC78LC00 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 6...12V |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2216LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ |
auf Bestellung 1837 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMUN2214LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 3243 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMMUN2212LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Current gain: 60...100 |
auf Bestellung 2435 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2212LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 2840 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2217LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2211LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2230LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2236LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Base-emitter resistor: 100kΩ Current gain: 80...150 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2238LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Current gain: 160...350 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2240LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Current gain: 120...300 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2241LT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Current gain: 160...350 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMMUN2238LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMMUN2234LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMMUN2211LT3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SMMUN2216LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N7002LT3G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.115A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FUSB251UCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP15 Supply voltage: 2.7...5.5V DC Type of integrated circuit: interface Quiescent current: 15µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FUSB302BUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9 Type of integrated circuit: interface Mounting: SMD Kind of integrated circuit: USB C controller Case: WLCSP9 Operating temperature: -40...85°C Supply voltage: 2.7...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FUSB307BMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FUSB307BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FUSB308BVMPX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...105°C Case: QFN16 Supply voltage: 2.8...5.5V DC Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
FUSB380CUCX | ONSEMI |
![]() Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12 Kind of package: reel; tape Kind of integrated circuit: USB C controller Mounting: SMD Operating temperature: -40...85°C Case: WLCSP12 Supply voltage: 2.4...5.5V DC Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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80SQ045NG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Kind of package: bulk Mounting: THT Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.55V Load current: 8A Max. off-state voltage: 45V Case: DO201AD |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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QSD2030F | ONSEMI |
![]() Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black Operating voltage: 1.3V Front: convex Mounting: THT Type of photoelement: photodiode Wavelength: 700...1100nm Wavelength of peak sensitivity: 880nm LED diameter: 5mm Viewing angle: 20° LED lens: black |
auf Bestellung 1958 Stücke: Lieferzeit 14-21 Tag (e) |
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NJW0302G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 150W Case: TO3P Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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MURS360T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.28V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 1185 Stücke: Lieferzeit 14-21 Tag (e) |
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QRD1114 | ONSEMI |
![]() ![]() Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
auf Bestellung 194 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2A | ONSEMI |
![]() ![]() ![]() Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Kind of package: reel; tape Capacitance: 18pF Leakage current: 0.35mA Power dissipation: 1.66W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MMBD4148 | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Max. forward impulse current: 2A Capacitance: 4pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBRD1035CTLT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 35V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.55V Kind of package: reel; tape Max. load current: 10A |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRD340T4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.45V Kind of package: reel; tape Max. load current: 6A |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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ES2D | ONSEMI |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 20ns Semiconductor structure: single diode Capacitance: 18pF Case: SMB Max. forward voltage: 0.9V Max. forward impulse current: 50A Leakage current: 0.35mA Features of semiconductor devices: fast switching Power dissipation: 1.66W Kind of package: reel; tape |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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4N32M | ONSEMI |
![]() ![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Insulation voltage: 2.5kV CTR@If: 50%@10mA |
auf Bestellung 902 Stücke: Lieferzeit 14-21 Tag (e) |
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4N32SM | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6 Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 5µs Turn-off time: 0.1ms Number of channels: 1 Insulation voltage: 2.5kV |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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BC848BWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BAS16XV2T5G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 1810 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
581+ | 0.12 EUR |
782+ | 0.092 EUR |
1313+ | 0.054 EUR |
1737+ | 0.041 EUR |
1810+ | 0.04 EUR |
NCP5181DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Protection: undervoltage UVP
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Protection: undervoltage UVP
Voltage class: 600V
auf Bestellung 1770 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
43+ | 1.69 EUR |
44+ | 1.63 EUR |
45+ | 1.6 EUR |
100+ | 1.54 EUR |
MC74VHC1G04DTT1G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHC
Number of inputs: 1
auf Bestellung 1633 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
610+ | 0.12 EUR |
695+ | 0.1 EUR |
747+ | 0.096 EUR |
807+ | 0.089 EUR |
834+ | 0.086 EUR |
848+ | 0.084 EUR |
1000+ | 0.08 EUR |
BAT54LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Power dissipation: 0.2W
Max. forward impulse current: 0.6A
auf Bestellung 9218 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
585+ | 0.12 EUR |
926+ | 0.077 EUR |
1289+ | 0.055 EUR |
1502+ | 0.048 EUR |
2119+ | 0.034 EUR |
3125+ | 0.023 EUR |
3312+ | 0.022 EUR |
9000+ | 0.021 EUR |
MC1413BDG |
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Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NL27WZ07DTT1G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; -55÷125°C
Case: TSOP6
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
202+ | 0.36 EUR |
FXL5T244BQX |
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Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 5
Number of inputs: 5
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
71+ | 1 EUR |
MBR20L45CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86520 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP51460SN33T1G |
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Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Kind of package: reel; tape
Maximum output current: 20mA
Operating voltage: 4.2...28V
auf Bestellung 3122 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
76+ | 0.95 EUR |
90+ | 0.8 EUR |
146+ | 0.49 EUR |
154+ | 0.46 EUR |
1000+ | 0.45 EUR |
MC14073BDG |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Case: SO14
Kind of package: tube
Mounting: SMD
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Case: SO14
Kind of package: tube
Mounting: SMD
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
auf Bestellung 434 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
198+ | 0.36 EUR |
217+ | 0.33 EUR |
233+ | 0.31 EUR |
365+ | 0.2 EUR |
388+ | 0.18 EUR |
MC14073BDR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Number of channels: triple; 3
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 3
Supply voltage: 3...18V DC
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2214LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 14052 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
676+ | 0.11 EUR |
1276+ | 0.056 EUR |
2000+ | 0.036 EUR |
3312+ | 0.022 EUR |
3497+ | 0.02 EUR |
74FST3257MNTWG |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Kind of package: reel; tape
Quiescent current: 3µA
Number of channels: 4
Supply voltage: 4...5.5V DC
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: digital
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Kind of package: reel; tape
Quiescent current: 3µA
Number of channels: 4
Supply voltage: 4...5.5V DC
Kind of integrated circuit: demultiplexer; multiplexer
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DF10M |
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Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 1kV
Case: MDIP4L
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Max. off-state voltage: 1kV
Case: MDIP4L
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: THT
Kind of package: tube
Load current: 1.5A
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C2V4 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1mA
Manufacturer series: BZX79C
auf Bestellung 2091 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
834+ | 0.086 EUR |
1352+ | 0.053 EUR |
2091+ | 0.034 EUR |
FSUSB42MUX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Kind of output: DPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MSOP10; 2.4÷4.4VDC; OUT: DPDT
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Case: MSOP10
Supply voltage: 2.4...4.4V DC
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 2
Kind of output: DPDT
auf Bestellung 3244 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
179+ | 0.4 EUR |
202+ | 0.35 EUR |
221+ | 0.32 EUR |
309+ | 0.23 EUR |
327+ | 0.22 EUR |
2500+ | 0.21 EUR |
74AC86MTCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 20uA; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
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74AC86SCX |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
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MC74AC86DR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of inputs: 2
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Technology: CMOS
Type of integrated circuit: digital
Case: SOIC14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of inputs: 2
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MC74AC86DTR2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of inputs: 2
Family: AC
Manufacturer series: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Technology: CMOS
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Kind of gate: XOR
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Number of inputs: 2
Family: AC
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BZX79C9V1 |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: BZX79C
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
834+ | 0.086 EUR |
1191+ | 0.06 EUR |
1471+ | 0.049 EUR |
1990+ | 0.036 EUR |
ES1B |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Capacitance: 7pF
Reverse recovery time: 15ns
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Load current: 1A
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Capacitance: 7pF
Reverse recovery time: 15ns
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Load current: 1A
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 100V
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
auf Bestellung 3447 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
216+ | 0.33 EUR |
311+ | 0.23 EUR |
371+ | 0.19 EUR |
550+ | 0.13 EUR |
582+ | 0.12 EUR |
MJE15035G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 50W
Collector current: 4A
Collector-emitter voltage: 350V
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Polarisation: bipolar
Kind of package: tube
Case: TO220AB
Mounting: THT
Type of transistor: PNP
Power dissipation: 50W
Collector current: 4A
Collector-emitter voltage: 350V
Frequency: 30MHz
auf Bestellung 183 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.16 EUR |
44+ | 1.64 EUR |
72+ | 1 EUR |
76+ | 0.94 EUR |
MC78LC50NTRG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.038V
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.038V
Output voltage: 5V
Output current: 0.1A
Case: TSOP5
Mounting: SMD
Manufacturer series: MC78LC00
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 6...12V
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
174+ | 0.41 EUR |
194+ | 0.37 EUR |
231+ | 0.31 EUR |
770+ | 0.093 EUR |
820+ | 0.087 EUR |
MMUN2216LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
auf Bestellung 1837 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
417+ | 0.17 EUR |
589+ | 0.12 EUR |
869+ | 0.082 EUR |
1029+ | 0.069 EUR |
1489+ | 0.048 EUR |
1837+ | 0.039 EUR |
SMMUN2214LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 3243 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
587+ | 0.12 EUR |
1021+ | 0.07 EUR |
1645+ | 0.043 EUR |
2009+ | 0.036 EUR |
2315+ | 0.031 EUR |
2451+ | 0.029 EUR |
NSVMMUN2212LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
385+ | 0.19 EUR |
527+ | 0.14 EUR |
949+ | 0.075 EUR |
1254+ | 0.057 EUR |
1378+ | 0.052 EUR |
MMUN2212LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 2840 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
658+ | 0.11 EUR |
758+ | 0.094 EUR |
1226+ | 0.058 EUR |
1701+ | 0.042 EUR |
2840+ | 0.026 EUR |
MMUN2217LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2211LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2230LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2236LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2238LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2240LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 120...300
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Current gain: 120...300
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MMUN2241LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2238LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2234LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2211LT3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMMUN2216LT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
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2N7002LT3G | ![]() |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FUSB251UCX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Quiescent current: 15µA
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Quiescent current: 15µA
Produkt ist nicht verfügbar
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FUSB302BUCX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: USB C controller
Case: WLCSP9
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Type of integrated circuit: interface
Mounting: SMD
Kind of integrated circuit: USB C controller
Case: WLCSP9
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
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FUSB307BMPX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB307BVMPX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB308BVMPX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB380CUCX |
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Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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80SQ045NG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Kind of package: bulk
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 8A
Max. off-state voltage: 45V
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Kind of package: bulk
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 8A
Max. off-state voltage: 45V
Case: DO201AD
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
74+ | 0.97 EUR |
110+ | 0.65 EUR |
116+ | 0.62 EUR |
117+ | 0.61 EUR |
QSD2030F |
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Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
Front: convex
Mounting: THT
Type of photoelement: photodiode
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 20°
LED lens: black
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
Front: convex
Mounting: THT
Type of photoelement: photodiode
Wavelength: 700...1100nm
Wavelength of peak sensitivity: 880nm
LED diameter: 5mm
Viewing angle: 20°
LED lens: black
auf Bestellung 1958 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
95+ | 0.76 EUR |
128+ | 0.56 EUR |
157+ | 0.46 EUR |
185+ | 0.39 EUR |
214+ | 0.33 EUR |
227+ | 0.32 EUR |
250+ | 0.31 EUR |
NJW0302G |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.3 EUR |
30+ | 2.4 EUR |
32+ | 2.27 EUR |
120+ | 2.19 EUR |
MURS360T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 1185 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
141+ | 0.51 EUR |
156+ | 0.46 EUR |
203+ | 0.35 EUR |
214+ | 0.33 EUR |
500+ | 0.32 EUR |
QRD1114 | ![]() |
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Hersteller: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.86 EUR |
41+ | 1.74 EUR |
42+ | 1.72 EUR |
53+ | 1.36 EUR |
56+ | 1.29 EUR |
ES2A |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 18pF
Leakage current: 0.35mA
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Capacitance: 18pF
Leakage current: 0.35mA
Power dissipation: 1.66W
Produkt ist nicht verfügbar
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MMBD4148 |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Max. forward impulse current: 2A
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Power dissipation: 0.35W
Max. forward impulse current: 2A
Capacitance: 4pF
Produkt ist nicht verfügbar
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MBRD1035CTLT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Kind of package: reel; tape
Max. load current: 10A
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
84+ | 0.85 EUR |
95+ | 0.76 EUR |
132+ | 0.54 EUR |
139+ | 0.51 EUR |
MBRD340T4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Max. load current: 6A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Max. load current: 6A
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
94+ | 0.77 EUR |
143+ | 0.5 EUR |
151+ | 0.48 EUR |
500+ | 0.47 EUR |
ES2D |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.5 EUR |
4N32M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
172+ | 0.42 EUR |
207+ | 0.35 EUR |
219+ | 0.33 EUR |
500+ | 0.32 EUR |
4N32SM |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Insulation voltage: 2.5kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Turn-off time: 0.1ms
Number of channels: 1
Insulation voltage: 2.5kV
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
81+ | 0.89 EUR |
112+ | 0.64 EUR |
128+ | 0.56 EUR |
145+ | 0.49 EUR |
154+ | 0.47 EUR |
157+ | 0.46 EUR |
BC848BWT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH