| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| NVBG060N065SC1 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 130A Gate charge: 74nC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NTH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 88W Case: TO247-4 Gate-source voltage: -8...22V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A Gate charge: 74nC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 88W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A Gate charge: 74nC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FDD4141 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -40V Drain current: -10.8A Power dissipation: 69W Case: DPAK Gate-source voltage: ±20V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1006 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS4D0N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 119A; Idm: 469A; 107W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 119A Pulsed drain current: 469A Power dissipation: 107W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
LM285D-2.5G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Maximum output current: 20mA |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
MUN2212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SMUN2212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSVMUN2212T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCP303150MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: PQFN39 Output current: 50A Supply voltage: 4.5...5.5V DC Mounting: SMD Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NCP3335ADM250R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD Operating temperature: -40...85°C Manufacturer series: NCP3335A Output voltage: 2.5V Case: Micro8 Number of channels: 2 Tolerance: ±1.5% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2.6...12V Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.34V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
MC14551BDG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO16; 3÷18VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Operating temperature: -55...125°C |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVHL060N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 32A Pulsed drain current: 184A Power dissipation: 110W Case: TO247-3 Gate-source voltage: -5...15V On-state resistance: 135mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FSB70250 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; LGA; 3.3A; MOSFET; Uoper: 500V; Usup: 300V; Uinsul: 1.5kV Operating temperature: -40...150°C Insulation voltage: 1.5kV Case: LGA Operating voltage: 500V Mounting: SMD Supply voltage: 300V Output current: 3.3A Type of integrated circuit: driver DC supply current: 1.7mA Power dissipation: 81W Integrated circuit features: MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
MMSZ4710T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 25V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 25V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ4xxTxG |
auf Bestellung 7369 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
2N5684G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3; TO204 Current gain: 15...60 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
2N5686G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 50A Power dissipation: 300W Case: TO3; TO204 Current gain: 15...60 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FOD2711A | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Mounting: THT Number of channels: 1 CTR@If: 100-200%@10mA Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: DIP8 |
auf Bestellung 787 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
FOD2711ASDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA Mounting: SMD Number of channels: 1 CTR@If: 100-200%@10mA Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: SO8 |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FOD2711ASD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SMD8; 50mA; PIN: 8 Mounting: SMD Number of channels: 1 Collector current: 50mA Number of pins: 8 Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: SMD8 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NSBA114EDP6T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 269mW Case: SOT963 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 8000pcs. Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSBA114EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 4000pcs. Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSVBA114EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 4000pcs. Application: automotive industry Current gain: 35...60 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| CPH6337-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -12V; -3.5A; 1.6W Power dissipation: 1.6W Drain current: -3.5A Kind of channel: enhancement Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±10V Mounting: SMD |
auf Bestellung 2639 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2639 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MM5Z4717T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5Z4xxxTxG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SZMM5Z4717T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 43V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5Z4xxxTxG Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
BZX79C2V7 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: BZX79C |
auf Bestellung 2130 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| GBPC15005 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A Max. forward impulse current: 0.3kA Max. forward voltage: 1.1V Version: square Leads: connectors FASTON Max. off-state voltage: 50V Electrical mounting: THT Load current: 15A Kind of package: bulk Case: GBPC Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| GBPC15005W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A Max. forward impulse current: 0.3kA Max. forward voltage: 1.1V Version: square Leads: wire Ø 1.0mm Max. off-state voltage: 50V Electrical mounting: THT Load current: 15A Kind of package: bulk Case: GBPC-W Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FDN357N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3 Mounting: SMD Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 1.9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-3 On-state resistance: 0.14Ω Power dissipation: 0.5W Gate charge: 5.9nC Polarisation: unipolar |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDA16N50-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: UniFET™ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDA16N50LDTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.3A Pulsed drain current: 66A Power dissipation: 205W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SZESD8551MXWT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5.5...8.3V Semiconductor structure: bidirectional Case: X2DFN2 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FOD420V | ONSEMI |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube Type of optocoupler: optotriac Insulation voltage: 5kV Output voltage: 600V Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 2mA Mounting: THT Number of channels: 1 Manufacturer series: FOD420 Kind of package: tube Turn-on time: 60µs Turn-off time: 52µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 21.2nC Kind of package: reel; tape |
auf Bestellung 2474 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 21.2nC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NVTFS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVTFWS020N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 27A Pulsed drain current: 128A Power dissipation: 15W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
NTDV20P06LT4G-VF01 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 143mΩ Pulsed drain current: 50A Power dissipation: 65W Gate charge: 15nC Polarisation: unipolar Drain current: 15.5A Kind of channel: enhancement Drain-source voltage: 60V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFS3D6N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5 Mounting: SMD Kind of package: reel; tape Case: DFN5 On-state resistance: 3.6mΩ Pulsed drain current: 1674A Power dissipation: 136W Gate charge: 60nC Polarisation: unipolar Drain current: 131A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 50A02CH-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3 Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.7W Polarisation: bipolar Type of transistor: PNP Current gain: 200...500 Kind of package: reel; tape Case: CPH3 Frequency: 690MHz Collector current: 0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NCV7041D3G050R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V Type of integrated circuit: instrumentation amplifier Bandwidth: 100kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 3...5.5V DC Case: SO8 Operating temperature: -40...150°C Slew rate: 1V/μs Gain: 50V/V Input offset voltage: 0.4mV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SZNUP4114HMR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 4 Kind of package: reel; tape Application: automotive industry Max. off-state voltage: 5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
HUF75542P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: THT Gate charge: 150nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MUN5212DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Current gain: 60...100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
NSVMUN5212DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Current gain: 60...100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
DTC124EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Base resistor: 22kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Current gain: 60...100 Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SC75; SOT416 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V |
auf Bestellung 1793 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DTC124EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 8000pcs. Current gain: 60...100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NZ9F18VST5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Case: SOD923 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: NZ9F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NZ9F18VT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD923 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: NZ9F |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SZNZ9F18VST5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Case: SOD923 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: NZ9F Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
SMUN5233T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.31W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
auf Bestellung 595 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SDTC124EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 60...100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DTC113EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT723 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DTC113EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSVDTC113EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 3...5 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Manufacturer standard package: 8000pcs. Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
74VHCT573AMTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: VHCT Kind of package: tube Trigger: level-triggered Manufacturer series: VHCT Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
74VHCT573AMTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: VHCT Kind of package: reel; tape Trigger: level-triggered Manufacturer series: VHCT Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
MC74VHCT573ADTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 Technology: CMOS; TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Family: VHCT Kind of output: 3-state Kind of package: tube Manufacturer series: VHCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVBG060N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L060N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 88W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 88W
Case: TO247-4
Gate-source voltage: -8...22V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVH4L060N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 88W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 88W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD4141 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 69W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.8A
Power dissipation: 69W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18.7mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1006 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMFS4D0N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 119A; Idm: 469A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 119A
Pulsed drain current: 469A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 119A; Idm: 469A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 119A
Pulsed drain current: 469A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LM285D-2.5G |
|
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; tube; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Maximum output current: 20mA
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
| MUN2212T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMUN2212T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN2212T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP303150MNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN39
Output current: 50A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: PQFN39
Output current: 50A
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP3335ADM250R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 2.5V
Case: Micro8
Number of channels: 2
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...12V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.34V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 500mA; Micro8; SMD
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Output voltage: 2.5V
Case: Micro8
Number of channels: 2
Tolerance: ±1.5%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.6...12V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.34V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14551BDG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Operating temperature: -55...125°C
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Operating temperature: -55...125°C
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
| NVHL060N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB70250 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; LGA; 3.3A; MOSFET; Uoper: 500V; Usup: 300V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Insulation voltage: 1.5kV
Case: LGA
Operating voltage: 500V
Mounting: SMD
Supply voltage: 300V
Output current: 3.3A
Type of integrated circuit: driver
DC supply current: 1.7mA
Power dissipation: 81W
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; LGA; 3.3A; MOSFET; Uoper: 500V; Usup: 300V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Insulation voltage: 1.5kV
Case: LGA
Operating voltage: 500V
Mounting: SMD
Supply voltage: 300V
Output current: 3.3A
Type of integrated circuit: driver
DC supply current: 1.7mA
Power dissipation: 81W
Integrated circuit features: MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ4710T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 25V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 25V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 25V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ4xxTxG
auf Bestellung 7369 Stücke:
Lieferzeit 14-21 Tag (e)
| 2N5684G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5686G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 50A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 50A
Power dissipation: 300W
Case: TO3; TO204
Current gain: 15...60
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD2711A |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: DIP8
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: THT
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: DIP8
auf Bestellung 787 Stücke:
Lieferzeit 14-21 Tag (e)
| FOD2711ASDV |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SO8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; CTR@If: 100-200%@10mA
Mounting: SMD
Number of channels: 1
CTR@If: 100-200%@10mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SO8
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
| FOD2711ASD |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SMD8; 50mA; PIN: 8
Mounting: SMD
Number of channels: 1
Collector current: 50mA
Number of pins: 8
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SMD8
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 5kV; SMD8; 50mA; PIN: 8
Mounting: SMD
Number of channels: 1
Collector current: 50mA
Number of pins: 8
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: SMD8
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| NSBA114EDP6T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA114EDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBA114EDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Application: automotive industry
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 4000pcs.
Application: automotive industry
Current gain: 35...60
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH6337-TL-W |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -12V; -3.5A; 1.6W
Power dissipation: 1.6W
Drain current: -3.5A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -12V; -3.5A; 1.6W
Power dissipation: 1.6W
Drain current: -3.5A
Kind of channel: enhancement
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Mounting: SMD
auf Bestellung 2639 Stücke:
Lieferzeit 14-21 Tag (e)
| MM5Z4717T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z4xxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z4xxxTxG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMM5Z4717T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z4xxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 43V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5Z4xxxTxG
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79C2V7 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; CASE017AG; single diode; bulk; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX79C
auf Bestellung 2130 Stücke:
Lieferzeit 14-21 Tag (e)
| GBPC15005 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Version: square
Leads: connectors FASTON
Max. off-state voltage: 50V
Electrical mounting: THT
Load current: 15A
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Version: square
Leads: connectors FASTON
Max. off-state voltage: 50V
Electrical mounting: THT
Load current: 15A
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC15005W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Version: square
Leads: wire Ø 1.0mm
Max. off-state voltage: 50V
Electrical mounting: THT
Load current: 15A
Kind of package: bulk
Case: GBPC-W
Type of bridge rectifier: single-phase
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; Ufmax: 1.1V; If: 15A
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.1V
Version: square
Leads: wire Ø 1.0mm
Max. off-state voltage: 50V
Electrical mounting: THT
Load current: 15A
Kind of package: bulk
Case: GBPC-W
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN357N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate charge: 5.9nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.14Ω
Power dissipation: 0.5W
Gate charge: 5.9nC
Polarisation: unipolar
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| FDA16N50-F109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: UniFET™
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDA16N50LDTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; Idm: 66A; 205W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Pulsed drain current: 66A
Power dissipation: 205W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD8551MXWT5G |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5.5÷8.3V; bidirectional; X2DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5.5...8.3V
Semiconductor structure: bidirectional
Case: X2DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD420V |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: FOD420
Kind of package: tube
Turn-on time: 60µs
Turn-off time: 52µs
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 600V; triac; DIP6; Ch: 1; FOD420; tube
Type of optocoupler: optotriac
Insulation voltage: 5kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 2mA
Mounting: THT
Number of channels: 1
Manufacturer series: FOD420
Kind of package: tube
Turn-on time: 60µs
Turn-off time: 52µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTD20N06T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
auf Bestellung 2474 Stücke:
Lieferzeit 14-21 Tag (e)
| NTDV20N06T4G-VF01 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 21.2nC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS020N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS020N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFWS020N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 27A; Idm: 128A; 15W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 27A
Pulsed drain current: 128A
Power dissipation: 15W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 20.3mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTDV20P06LT4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 143mΩ
Pulsed drain current: 50A
Power dissipation: 65W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 15.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 143mΩ
Pulsed drain current: 50A
Power dissipation: 65W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 15.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS3D6N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5
Mounting: SMD
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.6mΩ
Pulsed drain current: 1674A
Power dissipation: 136W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 131A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 131A; Idm: 1674A; 136W; DFN5
Mounting: SMD
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.6mΩ
Pulsed drain current: 1674A
Power dissipation: 136W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 131A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 50A02CH-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.7W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...500
Kind of package: reel; tape
Case: CPH3
Frequency: 690MHz
Collector current: 0.5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.5A; 0.7W; CPH3
Mounting: SMD
Collector-emitter voltage: 50V
Power dissipation: 0.7W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...500
Kind of package: reel; tape
Case: CPH3
Frequency: 690MHz
Collector current: 0.5A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7041D3G050R2G |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V
Type of integrated circuit: instrumentation amplifier
Bandwidth: 100kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 3...5.5V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.4mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 100kHz; Ch: 1; 3÷5.5VDC; SO8; 50V/V
Type of integrated circuit: instrumentation amplifier
Bandwidth: 100kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 3...5.5V DC
Case: SO8
Operating temperature: -40...150°C
Slew rate: 1V/μs
Gain: 50V/V
Input offset voltage: 0.4mV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNUP4114HMR6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 5.5V
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Application: automotive industry
Max. off-state voltage: 5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75542P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 150nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUN5212DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5212DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Current gain: 60...100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC124EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Base resistor: 22kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Base resistor: 22kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 60...100
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
auf Bestellung 1793 Stücke:
Lieferzeit 14-21 Tag (e)
| DTC124EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 8000pcs.
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 8000pcs.
Current gain: 60...100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZ9F18VST5G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZ9F18VT5G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNZ9F18VST5G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 18V; SMD; SOD923; reel,tape; single diode; NZ9F
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD923
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: NZ9F
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMUN5233T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.31W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.31W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 595 Stücke:
Lieferzeit 14-21 Tag (e)
| SDTC124EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 60...100
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 60...100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC113EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC113EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC113EM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 3...5
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT573AMTC |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: tube
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: tube
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHCT573AMTCX |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: reel; tape
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; VHCT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of package: reel; tape
Trigger: level-triggered
Manufacturer series: VHCT
Quiescent current: 40µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHCT573ADTG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: VHCT
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS,TTL; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: VHCT
Kind of output: 3-state
Kind of package: tube
Manufacturer series: VHCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH