| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| FZT649 | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSS20601CF8T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 6A; 1.4W; ChipFET8 Mounting: SMD Collector-emitter voltage: 20V Power dissipation: 1.4W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 200 Kind of package: reel; tape Case: ChipFET8 Frequency: 140MHz Collector current: 6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| H11L3SM | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate; logic Insulation voltage: 4.17kV Transfer rate: 1Mbps Case: PDIP6 Turn-on time: 1µs Turn-off time: 1.2µs Max. off-state voltage: 6V Output voltage: 0...16V Manufacturer series: H11L3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 197A Power dissipation: 94W Case: TDFN4 Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT061N60S5F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 41A Pulsed drain current: 146A Power dissipation: 255W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 61mΩ Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT064N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 260W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT090N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 90mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTMT095N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV2001SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 1; 0.9÷7VDC; SOT23-5; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 0.9...7V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 1.6V/μs Integrated circuit features: rail-to-rail Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 10pA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBL045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 51A Pulsed drain current: 182A Power dissipation: 174W Case: H-PSOF8L Gate-source voltage: -5...18V On-state resistance: 40mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBL050N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 49A Pulsed drain current: 132A Power dissipation: 305W Case: H-PSOF8L Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBL070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 70mΩ Pulsed drain current: 110A Power dissipation: 312W Gate charge: 82nC Polarisation: unipolar Drain current: 44A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCV1117DT33T5G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1.5A Case: DPAK Mounting: SMD Manufacturer series: NCV1117 Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Input voltage: 1.25...20V Tolerance: ±1% Voltage drop: 1.2V Application: automotive industry |
auf Bestellung 2197 Stücke: Lieferzeit 14-21 Tag (e) |
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| GBPC1506 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| GBPC1506W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| SZMMBZ15VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SC70; Ch: 2 Application: automotive industry Max. off-state voltage: 12V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FDMS037N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8 Gate-source voltage: ±20V Kind of package: reel; tape Case: PQFN8 On-state resistance: 3.7mΩ Mounting: SMD Pulsed drain current: 400A Power dissipation: 104.2W Gate charge: 0.1µC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 75V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCV7342D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape Interface: CAN Operating temperature: -40...125°C Application: automotive industry Kind of package: reel; tape Case: SO8 Number of channels: 1 Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: CAN transceiver |
auf Bestellung 2957 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33072DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 3994 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33072ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO8 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 2181 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33202DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 2.2MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail Input offset voltage: 8mV Kind of package: reel; tape |
auf Bestellung 1226 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7WZ16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Operating temperature: -40...85°C Technology: CMOS Quiescent current: 10µA Kind of package: reel; tape Case: SC70-6 Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 539 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7WV16P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA Mounting: SMD Supply voltage: 0.9...3.6V DC Type of integrated circuit: digital Operating temperature: -40...85°C Technology: CMOS Quiescent current: 0.9µA Kind of package: reel; tape Case: SC70-6 Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 1086 Stücke: Lieferzeit 14-21 Tag (e) |
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MUR820G | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Max. forward voltage: 0.975V Max. load current: 16A Reverse recovery time: 35ns Heatsink thickness: max. 1.4mm |
auf Bestellung 451 Stücke: Lieferzeit 14-21 Tag (e) |
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FSA4159P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Mounting: SMD Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Operating temperature: -40...85°C Resistance: 3.5Ω Number of inputs: 1 Output configuration: SPDT Case: SC70-6; SC88; SOT363 Number of outputs: 2 Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZBZX84C2V4ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±8% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZBZX84C2V4LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT365ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT365ADTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: HCT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDI045N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Power dissipation: 263W Case: I2PAK Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 656A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDP045N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 164A Power dissipation: 263W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 656A Gate charge: 54nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDPF045N10A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 67A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 268A Gate charge: 57nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SB10-05P-TD-E | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape Case: SOT89 Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.55V Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Type of diode: Schottky rectifying Max. forward impulse current: 10A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM317LZ | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FAN3224TM1X-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FAN3224TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: WDFN8 Output current: -5...5A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FAN3224TUM1X-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8-EP Output current: -5...5A Number of channels: 2 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FAN3224TUMX-F085 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -5...5A Number of channels: 2 Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 12ns Pulse fall time: 9ns Application: automotive industry Kind of package: reel; tape Kind of output: non-inverting |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| LM2575D2T-5R4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N4934G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59-10; DO41 Kind of package: bulk Max. forward voltage: 1.2V Reverse recovery time: 200ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4934RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 300ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: DO41 Kind of package: reel; tape Reverse recovery time: 300ns Features of semiconductor devices: fast switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBZ18VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 18V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 50nA |
auf Bestellung 4375 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMBZ18VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 18V Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Number of channels: 2 Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| HUF76429S3ST | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 44A Power dissipation: 110W Case: TO263AB Gate-source voltage: ±16V On-state resistance: 25mΩ Mounting: SMD Gate charge: 38nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MOCD223M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 500-1000%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 8µs Turn-off time: 55µs |
auf Bestellung 2389 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 28 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV6356QMTWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry Mounting: SMD Type of integrated circuit: PMIC Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Manufacturer series: MOC3063M Output voltage: 600V |
auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14049UBDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: buffer; hex; inverter Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBTA28 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 6621 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA114YM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Manufacturer standard package: 8000pcs. Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMUN2114LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
auf Bestellung 1712 Stücke: Lieferzeit 14-21 Tag (e) |
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MMUN2114LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SMMUN2114LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMUN2112LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 3365 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMMUN2112LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Application: automotive industry Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FZT649 |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSS20601CF8T1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.4W; ChipFET8
Mounting: SMD
Collector-emitter voltage: 20V
Power dissipation: 1.4W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200
Kind of package: reel; tape
Case: ChipFET8
Frequency: 140MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 6A; 1.4W; ChipFET8
Mounting: SMD
Collector-emitter voltage: 20V
Power dissipation: 1.4W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 200
Kind of package: reel; tape
Case: ChipFET8
Frequency: 140MHz
Collector current: 6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L3SM |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L3
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate; logic
Insulation voltage: 4.17kV
Transfer rate: 1Mbps
Case: PDIP6
Turn-on time: 1µs
Turn-off time: 1.2µs
Max. off-state voltage: 6V
Output voltage: 0...16V
Manufacturer series: H11L3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMT045N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TDFN4
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TDFN4
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT061N60S5F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Pulsed drain current: 146A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 41A; Idm: 146A; 255W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 41A
Pulsed drain current: 146A
Power dissipation: 255W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT064N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT090N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMT095N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV2001SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 0.9÷7VDC; SOT23-5; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 0.9...7V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.6V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 10pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 1; 0.9÷7VDC; SOT23-5; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 0.9...7V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 1.6V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 10pA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTBL045N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 51A; Idm: 182A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 51A
Pulsed drain current: 182A
Power dissipation: 174W
Case: H-PSOF8L
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBL050N65S3H |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Pulsed drain current: 132A
Power dissipation: 305W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 49A; Idm: 132A; 305W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 49A
Pulsed drain current: 132A
Power dissipation: 305W
Case: H-PSOF8L
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBL070N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Pulsed drain current: 110A
Power dissipation: 312W
Gate charge: 82nC
Polarisation: unipolar
Drain current: 44A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 312W; H-PSOF8L
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Pulsed drain current: 110A
Power dissipation: 312W
Gate charge: 82nC
Polarisation: unipolar
Drain current: 44A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV1117DT33T5G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.25...20V
Tolerance: ±1%
Voltage drop: 1.2V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1.5A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Input voltage: 1.25...20V
Tolerance: ±1%
Voltage drop: 1.2V
Application: automotive industry
auf Bestellung 2197 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 117+ | 0.73 EUR |
| 161+ | 0.54 EUR |
| 187+ | 0.45 EUR |
| 205+ | 0.42 EUR |
| GBPC1506 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC1506W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMBZ15VAWT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SC70; Ch: 2
Application: automotive industry
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SC70; Ch: 2
Application: automotive industry
Max. off-state voltage: 12V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS037N08B |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 3.7mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 104.2W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 3.7mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 104.2W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7342D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape
Interface: CAN
Operating temperature: -40...125°C
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Number of channels: 1
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: CAN transceiver
Category: Interfaces others - integrated circuits
Description: IC: CAN transceiver; 4.5÷5.5VDC; CAN; SMD; SO8; Ch: 1; reel,tape
Interface: CAN
Operating temperature: -40...125°C
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Number of channels: 1
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: CAN transceiver
auf Bestellung 2957 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.86 EUR |
| 138+ | 0.62 EUR |
| 153+ | 0.56 EUR |
| 174+ | 0.49 EUR |
| MC33072DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 3994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 190+ | 0.45 EUR |
| 216+ | 0.39 EUR |
| 256+ | 0.33 EUR |
| 288+ | 0.3 EUR |
| 317+ | 0.27 EUR |
| 343+ | 0.25 EUR |
| 2500+ | 0.23 EUR |
| MC33072ADR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO8
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 2181 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 173+ | 0.49 EUR |
| 196+ | 0.44 EUR |
| 232+ | 0.37 EUR |
| 285+ | 0.3 EUR |
| 313+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| MC33202DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 8mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 2; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 2.2MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 8mV
Kind of package: reel; tape
auf Bestellung 1226 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 188+ | 0.45 EUR |
| 212+ | 0.4 EUR |
| 250+ | 0.35 EUR |
| 277+ | 0.31 EUR |
| NC7WZ16P6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 539 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 539+ | 0.15 EUR |
| NC7WV16P6X |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 0.9uA
Mounting: SMD
Supply voltage: 0.9...3.6V DC
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 0.9µA
Kind of package: reel; tape
Case: SC70-6
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 1086 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 385+ | 0.23 EUR |
| 439+ | 0.19 EUR |
| 527+ | 0.17 EUR |
| 569+ | 0.15 EUR |
| MUR820G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Max. forward voltage: 0.975V
Max. load current: 16A
Reverse recovery time: 35ns
Heatsink thickness: max. 1.4mm
auf Bestellung 451 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 91+ | 0.94 EUR |
| 109+ | 0.79 EUR |
| 112+ | 0.76 EUR |
| FSA4159P6X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of inputs: 1
Output configuration: SPDT
Case: SC70-6; SC88; SOT363
Number of outputs: 2
Number of channels: 1
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of inputs: 1
Output configuration: SPDT
Case: SC70-6; SC88; SOT363
Number of outputs: 2
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C2V4ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±8%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZBZX84C2V4LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT365ADR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; SOIC16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT365ADTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS,TTL; SMD; TSSOP16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDI045N10A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: I2PAK
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDP045N10A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 164A; Idm: 656A; 263W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 164A
Power dissipation: 263W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 656A
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDPF045N10A |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate charge: 57nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; Idm: 268A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 67A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 268A
Gate charge: 57nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SB10-05P-TD-E |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT89; SMD; 50V; 1A; reel,tape
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.55V
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM317LZ |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.1A; TO92; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224TM1X-F085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224TMPX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: WDFN8
Output current: -5...5A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224TUM1X-F085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8-EP
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
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| FAN3224TUMX-F085 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -5...5A
Number of channels: 2
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 12ns
Pulse fall time: 9ns
Application: automotive industry
Kind of package: reel; tape
Kind of output: non-inverting
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM2575D2T-5R4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| 1N4934G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; CASE59-10,DO41; bulk
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Kind of package: bulk
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Features of semiconductor devices: fast switching
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Im Einkaufswagen
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| 1N4934RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 1A; Ifsm: 30A; DO41; reel,tape; 300ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 300ns
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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| MMBZ18VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 50nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 50nA
auf Bestellung 4375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 715+ | 0.12 EUR |
| 848+ | 0.1 EUR |
| 1283+ | 0.067 EUR |
| 1511+ | 0.056 EUR |
| 1812+ | 0.046 EUR |
| 2000+ | 0.043 EUR |
| 2193+ | 0.039 EUR |
| 3000+ | 0.036 EUR |
| SZMMBZ18VALT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 18V; 1.6A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 18V
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| HUF76429S3ST |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 110W
Case: TO263AB
Gate-source voltage: ±16V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 110W; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 110W
Case: TO263AB
Gate-source voltage: ±16V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 38nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| MOCD223M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 500-1000%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 8µs
Turn-off time: 55µs
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 101+ | 0.84 EUR |
| 111+ | 0.77 EUR |
| 113+ | 0.76 EUR |
| 119+ | 0.71 EUR |
| 128+ | 0.67 EUR |
| 500+ | 0.55 EUR |
| NXH020F120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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| NXH020F120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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Stück im Wert von UAH
| NXH020P120MNF1PG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
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Stück im Wert von UAH
| NXH020P120MNF1PTG |
|
Hersteller: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Produkt ist nicht verfügbar
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCV6356QMTWTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SMD; reel,tape; automotive industry
Mounting: SMD
Type of integrated circuit: PMIC
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3063M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Manufacturer series: MOC3063M
Output voltage: 600V
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 1.31 EUR |
| 126+ | 0.68 EUR |
| 141+ | 0.61 EUR |
| 154+ | 0.56 EUR |
| 166+ | 0.51 EUR |
| MC14049UBDR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex,inverter; Ch: 6; IN: 1; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex; inverter
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBTA28 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 0.8A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 198+ | 0.43 EUR |
| 240+ | 0.36 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| DTA114YET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 6621 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3185+ | 0.026 EUR |
| 4167+ | 0.02 EUR |
| 4348+ | 0.019 EUR |
| 4762+ | 0.018 EUR |
| DTA114YM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2114LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 1712 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 582+ | 0.14 EUR |
| 667+ | 0.13 EUR |
| 973+ | 0.088 EUR |
| 1147+ | 0.074 EUR |
| 1645+ | 0.051 EUR |
| 1712+ | 0.049 EUR |
| MMUN2114LT3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SMMUN2114LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2112LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
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Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.17 EUR |
| 725+ | 0.12 EUR |
| 848+ | 0.1 EUR |
| 1038+ | 0.082 EUR |
| 1191+ | 0.071 EUR |
| 1558+ | 0.055 EUR |
| 1793+ | 0.048 EUR |
| 3000+ | 0.039 EUR |
| NSVMMUN2112LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
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