FQP2N80 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 800V 2.4A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 1.2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 283+ | 1.57 EUR |
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Technische Details FQP2N80 Fairchild Semiconductor
Description: MOSFET N-CH 800V 2.4A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 6.3Ohm @ 1.2A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote FQP2N80 nach Preis ab 1.6 EUR bis 2.76 EUR
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FQP2N80 | Hersteller : onsemi / Fairchild |
MOSFET 800V N-Channel QFET |
auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP2N80 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220 Tube |
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FQP2N80 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.52A; Idm: 9.6A; 85W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 15nC On-state resistance: 6.3Ω Drain current: 1.52A Pulsed drain current: 9.6A Power dissipation: 85W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |