| Anzahl | Preis |
|---|---|
| 2+ | 1.6 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.58 EUR |
| 5000+ | 0.53 EUR |
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Technische Details FS8K onsemi / Fairchild
Description: DIODE GEN PURP 800V 8A TO277-3, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3.37 µs, Technology: Standard, Capacitance @ Vr, F: 118pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-277-3, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote FS8K nach Preis ab 0.62 EUR bis 1.69 EUR
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FS8K | onsemi |
 Description: DIODE GEN PURP 800V 8A TO277-3Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 118pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 3.37 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
auf Bestellung 3545 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FS8K |
|
Hersteller: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 800V 8A TO277-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 800 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 3.37 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
auf Bestellung 3545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.69 EUR |
| 14+ | 1.27 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.62 EUR |