| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SZBZX84C10ET1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
1SMB5923BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 8.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
1SMB5922BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 7.5V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 7.5V Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
auf Bestellung 2344 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
SZ1SMB5923BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 8.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
SZ1SMB5925BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 10V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
HCPL2530M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8 Mounting: THT Manufacturer series: HCPL2530M CTR@If: 7-50%@16mA Kind of output: transistor Transfer rate: 1Mbps Insulation voltage: 5kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Output voltage: -500mV...20V Case: DIP8 Number of channels: 2 |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| GBPC3510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
SRDA05-4R2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6V; 500W; bidirectional; ESD; SO8; Ch: 4; reel,tape Mounting: SMD Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Version: ESD Max. off-state voltage: 5V Kind of package: reel; tape Semiconductor structure: bidirectional Case: SO8 Capacitance: 8pF Type of diode: TVS array Number of channels: 4 |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MC74ACT125DR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: SO14 Manufacturer series: ACT Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCP3284AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck Topology: buck Mounting: SMD Input voltage: 4.5...18V Output current: 35A Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: 0.8...5.5V Number of channels: 1 Frequency: 0.5...1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP3284MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck Topology: buck Mounting: SMD Input voltage: 4.5...18V Output current: 30A Type of integrated circuit: PMIC Operating temperature: -40...125°C Output voltage: 0.8...5.5V Number of channels: 1 Frequency: 0.5...1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
  |
MC74VHC1G09DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of output: open drain Family: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NLVVHC1G09DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of output: open drain |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
MUR240RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 35A; DO41; reel,tape; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Reverse recovery time: 65ns Max. forward impulse current: 35A |
auf Bestellung 4791 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MUR2100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; bulk; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: bulk Reverse recovery time: 75ns Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MUR220G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; bulk; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: bulk Reverse recovery time: 35ns Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MUR2100ERLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; reel,tape; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Reverse recovery time: 75ns Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MUR210RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 35A; DO41; reel,tape; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Reverse recovery time: 30ns Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
MUR220RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; reel,tape; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Reverse recovery time: 35ns Max. forward impulse current: 35A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NLAS5123MUR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA Mounting: SMD Case: uDFN6 Kind of package: reel; tape Number of channels: 1 Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT Operating temperature: -40...85°C Quiescent current: 1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
FDN302P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 84mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±12V |
auf Bestellung 1194 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MDB6S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: MicroDIP Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 3164 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FFSH40120ADN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.75V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FFB20UP20DN-F085 | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A Reverse recovery time: 40ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.15V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FFSB2065BDN-F085 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 23.6A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Application: automotive industry Max. forward voltage: 1.75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FFSH1265BDN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 14.4A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FFSH2065BDN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FFSH4065BDN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCV57302DSADJR4G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.24...13V Output current: 3A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
|
FDN5630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3 Mounting: SMD Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 1.7A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-3 On-state resistance: 0.18Ω Power dissipation: 0.5W Gate charge: 10nC Polarisation: unipolar |
auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| NCP1076BAP100G | ONSEMI |
Category: Integrated circuits - Unclassified Description: NCP1076BAP100G |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
 |
KSA708YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.7A Power dissipation: 0.8W Case: TO92 Current gain: 120...240 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 9509 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FGD3245G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
FGD3245G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 23nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FDP61N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 38.5A Power dissipation: 417W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| NTBG014N120M3P | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 452A Power dissipation: 326W Gate charge: 377nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 106A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBG015N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 422A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBG045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 184A Power dissipation: 121W Gate charge: 105nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 44A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -5...18V On-state resistance: 40mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBG060N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 176A Power dissipation: 3.6W Gate charge: 88nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 5.8A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -5...15V On-state resistance: 135mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBG070N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 93A Power dissipation: 86W Gate charge: 57nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 25A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 136mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTBG080N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 110A Power dissipation: 89W Gate charge: 56nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 21A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 121mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFS016N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 160A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFS016N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 18W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 226A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
LM350T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...33V Output current: 3A Case: TO220 Mounting: THT Number of channels: 1 Heatsink thickness: 0.51...0.61mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 50W Case: DPAK Mounting: SMD Gate charge: 26nC Technology: QFET® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.36Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
NTR5105PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
MMSZ5251B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MMSZ5248CT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
|
SZMMSZ5248ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NZD9V1MUT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: X3DFN2 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: NZDxxMU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
FDB13AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: 62A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 34mΩ Mounting: SMD Power dissipation: 115W |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
| SS33 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.5V Max. off-state voltage: 30V Load current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTTFS4C02NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 164A Pulsed drain current: 663A Power dissipation: 2.5W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP730BMT500TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 5V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP730BMT300TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP730BMT330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3.3V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP730BMTADJTBG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
 |
NCP730ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCP730BMT250TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.5V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
|
|
NCP730ASNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SZBZX84C10ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1SMB5923BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 342+ | 0.25 EUR |
| 1SMB5922BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 7.5V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 7.5V
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
auf Bestellung 2344 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 329+ | 0.26 EUR |
| 379+ | 0.23 EUR |
| 496+ | 0.17 EUR |
| 532+ | 0.15 EUR |
| SZ1SMB5923BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 8.2V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZ1SMB5925BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HCPL2530M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Mounting: THT
Manufacturer series: HCPL2530M
CTR@If: 7-50%@16mA
Kind of output: transistor
Transfer rate: 1Mbps
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Output voltage: -500mV...20V
Case: DIP8
Number of channels: 2
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Mounting: THT
Manufacturer series: HCPL2530M
CTR@If: 7-50%@16mA
Kind of output: transistor
Transfer rate: 1Mbps
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Output voltage: -500mV...20V
Case: DIP8
Number of channels: 2
auf Bestellung 189 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.74 EUR |
| 47+ | 1.83 EUR |
| 100+ | 1.65 EUR |
| GBPC3510W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRDA05-4R2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; bidirectional; ESD; SO8; Ch: 4; reel,tape
Mounting: SMD
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SO8
Capacitance: 8pF
Type of diode: TVS array
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; bidirectional; ESD; SO8; Ch: 4; reel,tape
Mounting: SMD
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Version: ESD
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SO8
Capacitance: 8pF
Type of diode: TVS array
Number of channels: 4
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| MC74ACT125DR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; SO14; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: SO14
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP3284AMNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 35A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 35A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP3284MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 30A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Topology: buck
Mounting: SMD
Input voltage: 4.5...18V
Output current: 30A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output voltage: 0.8...5.5V
Number of channels: 1
Frequency: 0.5...1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74VHC1G09DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Family: VHC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLVVHC1G09DFT1G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: open drain
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR240RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 35A; DO41; reel,tape; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 65ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 35A; DO41; reel,tape; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 65ns
Max. forward impulse current: 35A
auf Bestellung 4791 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 239+ | 0.36 EUR |
| 323+ | 0.26 EUR |
| 374+ | 0.23 EUR |
| 468+ | 0.18 EUR |
| 569+ | 0.15 EUR |
| MUR2100EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; bulk; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; bulk; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR220G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; bulk; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Reverse recovery time: 35ns
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR2100ERLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 2A; Ifsm: 35A; DO41; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR210RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 35A; DO41; reel,tape; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2A; Ifsm: 35A; DO41; reel,tape; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUR220RLG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; reel,tape; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 2A; Ifsm: 35A; DO41; reel,tape; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward impulse current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLAS5123MUR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT
Operating temperature: -40...85°C
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT
Operating temperature: -40...85°C
Quiescent current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDN302P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±12V
auf Bestellung 1194 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 123+ | 0.69 EUR |
| 141+ | 0.61 EUR |
| 205+ | 0.42 EUR |
| 243+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| MDB6S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 3164 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 118+ | 0.73 EUR |
| 140+ | 0.61 EUR |
| 181+ | 0.48 EUR |
| 262+ | 0.32 EUR |
| 500+ | 0.25 EUR |
| FFSH40120ADN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.75V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 30.23 EUR |
| 4+ | 27.33 EUR |
| 10+ | 25.32 EUR |
| 30+ | 23.87 EUR |
| FFB20UP20DN-F085 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Reverse recovery time: 40ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.15V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSB2065BDN-F085 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH1265BDN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 14.4A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 14.4A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH2065BDN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH4065BDN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV57302DSADJR4G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.24...13V
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.24...13V
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN5630 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Gate charge: 10nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Gate charge: 10nC
Polarisation: unipolar
auf Bestellung 2560 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 149+ | 0.57 EUR |
| 217+ | 0.39 EUR |
| 257+ | 0.33 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| NCP1076BAP100G |
|
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 2.09 EUR |
| 350+ | 1.78 EUR |
| KSA708YBU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 9509 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 329+ | 0.26 EUR |
| 382+ | 0.23 EUR |
| 468+ | 0.18 EUR |
| 610+ | 0.14 EUR |
| 747+ | 0.11 EUR |
| 1000+ | 0.11 EUR |
| 5000+ | 0.099 EUR |
| FGD3245G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGD3245G2-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 23nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 23nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDP61N20 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 3.56 EUR |
| 29+ | 3.01 EUR |
| 34+ | 2.53 EUR |
| 50+ | 2.25 EUR |
| NTBG014N120M3P |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 452A
Power dissipation: 326W
Gate charge: 377nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 106A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 452A
Power dissipation: 326W
Gate charge: 377nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 106A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBG015N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBG045N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 184A
Power dissipation: 121W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 184A
Power dissipation: 121W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBG060N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 176A
Power dissipation: 3.6W
Gate charge: 88nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 176A
Power dissipation: 3.6W
Gate charge: 88nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBG070N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 93A
Power dissipation: 86W
Gate charge: 57nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 93A
Power dissipation: 86W
Gate charge: 57nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBG080N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 110A
Power dissipation: 89W
Gate charge: 56nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 110A
Power dissipation: 89W
Gate charge: 56nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS016N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS016N06CT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM350T |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD10N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR5105PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 353+ | 0.24 EUR |
| 407+ | 0.21 EUR |
| 544+ | 0.15 EUR |
| MMSZ5251B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5248CT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5248ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZD9V1MUT5G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB13AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.45 EUR |
| 40+ | 2.17 EUR |
| 43+ | 2.01 EUR |
| 100+ | 1.87 EUR |
| SS33 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS4C02NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730BMT500TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730BMT300TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730BMT330TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730BMTADJTBG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730ASN300T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730BMT250TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP730ASNADJT1G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH