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FDD86367 FDD86367 ONSEMI fdd86367-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
On-state resistance: 8.4mΩ
Kind of package: reel; tape
Drain current: 100A
Drain-source voltage: 80V
Gate charge: 88nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Polarisation: unipolar
Power dissipation: 227W
Type of transistor: N-MOSFET
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
43+1.7 EUR
45+1.62 EUR
250+1.56 EUR
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MUR4100ERLG MUR4100ERLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E785B41B562469&compId=MUR4100EG.PDF?ci_sign=6ec0a09b52ba861bb5b832eeafd06f4868dd2d05 Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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BDX33CG BDX33CG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD53DA19E66469&compId=BDX33CG.PDF?ci_sign=3e2e1e0a6e5046e04fe17405a866f364761d2af7 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 70W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 21 Stücke:
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21+3.4 EUR
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MC33072ADR2G MC33072ADR2G ONSEMI mc34071-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Produkt ist nicht verfügbar
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HCPL0601R2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA41520D6&compId=HCPL0601R2.pdf?ci_sign=9b4be696ae09de472a9902dc111e95488bba8b37 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
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MC7812BDTRKG MC7812BDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE9CC6D414260C7&compId=MC78xx.pdf?ci_sign=5c967ea61e70b06d60938bce0de2bd299bbedecb Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; linear
Mounting: SMD
Case: DPAK
Tolerance: ±4%
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
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MC74ACT157DG MC74ACT157DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629E403DCC0D3&compId=MC74AC157-D.pdf?ci_sign=36156d6c35acd4719a4447ea4ea15ebcb26e9a75 Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Type of integrated circuit: digital
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.26 EUR
71+1.02 EUR
103+0.7 EUR
109+0.66 EUR
Mindestbestellmenge: 57
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BAR43 ONSEMI pVersion=0046&contRep=ZT&docId=E1C0470F8C513FF1A6F5005056AB5A8F&compId=BAR43S-Fairchild.pdf?ci_sign=f178fb60d1f38a78de55a303d0225c404b97425c Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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FGY100T65SCDT ONSEMI fgy100t65scdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Type of transistor: IGBT
Power dissipation: 375W
Kind of package: tube
Gate charge: 157nC
Case: TO247-3
Produkt ist nicht verfügbar
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FDMS86101A ONSEMI fdms86101a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DF01S DF01S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 31 Stücke:
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31+2.3 EUR
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FOD3184 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2E8F526280C7&compId=FOD3184.pdf?ci_sign=238b6861301fd8dd12b510bd0abc56cec050c790 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 24ns
Turn-on time: 38ns
Produkt ist nicht verfügbar
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FOD3184S ONSEMI fod3184-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Produkt ist nicht verfügbar
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74VHC14MX 74VHC14MX ONSEMI 74vhc14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Produkt ist nicht verfügbar
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NRVUS1JFA NRVUS1JFA ONSEMI us1mfa-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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TIP126TU TIP126TU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD5255FCD64E469&compId=TIP125TU.pdf?ci_sign=c4bc071cfd25ab10ad0567a30e4d480ddd469f6a Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 1 Stücke:
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NTS4001NT1G NTS4001NT1G ONSEMI nts4001n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 3314 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
313+0.23 EUR
500+0.14 EUR
618+0.12 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 209
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NTA4001NT1G NTA4001NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A05DC8338C745&compId=NTA4001N.PDF?ci_sign=158eea1d141787f6bae3bfa25c215b650f3c3e32 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Mounting: SMD
Produkt ist nicht verfügbar
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TL431BVDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Tolerance: ±0.4%
Reference voltage: 2.495V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
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MC74ACT14DG MC74ACT14DG ONSEMI mc74ac14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
auf Bestellung 120 Stücke:
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49+1.49 EUR
66+1.08 EUR
83+0.86 EUR
114+0.63 EUR
120+0.6 EUR
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MC74ACT14DR2G MC74ACT14DR2G ONSEMI mc74ac14-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
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MC74ACT14DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629A14A2080D3&compId=MC74AC14-D.pdf?ci_sign=dd814371e0791516565a1348800cb1239e54622a Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Manufacturer series: ACT
Number of inputs: 1
Kind of integrated circuit: hex; inverter; Schmitt trigger
Produkt ist nicht verfügbar
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ES3B ES3B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3B58CC4595EA&compId=ES3J.pdf?ci_sign=93ab53866dcb3ff171e1b0f6a58dc0dfcd60c637 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Produkt ist nicht verfügbar
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74VHC74MTCX 74VHC74MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B3D387B53820&compId=74VHC74-D.pdf?ci_sign=fa8580f39a0b0aededb51a6dcfcf5b46481181af Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
auf Bestellung 2246 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
148+0.49 EUR
188+0.38 EUR
290+0.25 EUR
305+0.23 EUR
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MC74ACT245DWR2G MC74ACT245DWR2G ONSEMI mc74ac245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: ACT
Operating temperature: -40...85°C
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.2 EUR
46+1.57 EUR
55+1.32 EUR
90+0.8 EUR
96+0.75 EUR
500+0.72 EUR
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SMUN5113DW1T1G SMUN5113DW1T1G ONSEMI dta144ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
391+0.18 EUR
538+0.13 EUR
1009+0.071 EUR
1226+0.058 EUR
1309+0.055 EUR
Mindestbestellmenge: 209
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LM258N LM258N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EC5324E8DD5EA&compId=LM258N.pdf?ci_sign=5d434e955dfe687a2837f56207f6215941d7ab64 description Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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2SA2040-TL-E ONSEMI en6913-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
77+0.93 EUR
113+0.63 EUR
120+0.6 EUR
500+0.58 EUR
Mindestbestellmenge: 61
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NTGS4141NT1G NTGS4141NT1G ONSEMI ntgs4141n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Drain-source voltage: 30V
Drain current: 3.6A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TSOP6
auf Bestellung 4619 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
194+0.37 EUR
298+0.24 EUR
315+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 109
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FAN73895MX ONSEMI fan73895-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-side
Case: SO28-W
Output current: -650...350mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Voltage class: 600V
Produkt ist nicht verfügbar
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KSD363RTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE4675102AF80D6&compId=KSD363.pdf?ci_sign=03781a5dad92b1925c36c46743892906c729210f Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB
Frequency: 10MHz
Collector-emitter voltage: 120V
Current gain: 40...80
Collector current: 6A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
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MMBFJ270 MMBFJ270 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B1701B2CC77E27&compId=MMBFJ270-DTE.pdf?ci_sign=4f92c244f51728701677d48f3336f29f6cfc3019 Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 237 Stücke:
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107+0.67 EUR
139+0.52 EUR
191+0.37 EUR
237+0.3 EUR
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MMBFJ176 MMBFJ176 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 250Ω
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MMBFJ108 MMBFJ108 ONSEMI j109-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
auf Bestellung 1598 Stücke:
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167+0.43 EUR
243+0.29 EUR
257+0.28 EUR
500+0.27 EUR
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MMBFJ110 MMBFJ110 ONSEMI mmbfj110-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Produkt ist nicht verfügbar
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1N5929BRLG 1N5929BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1N59xxB
Mounting: THT
auf Bestellung 4215 Stücke:
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247+0.29 EUR
319+0.22 EUR
363+0.2 EUR
474+0.15 EUR
501+0.14 EUR
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SMMBT2907ALT1G ONSEMI mmbt2907alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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SMMBT2907ALT3G ONSEMI mmbt2907alt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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NSS40201LT1G NSS40201LT1G ONSEMI nss40201l-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Case: SOT23; TO236AB
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.54W
Frequency: 150MHz
Collector-emitter voltage: 40V
auf Bestellung 610 Stücke:
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157+0.46 EUR
236+0.3 EUR
325+0.22 EUR
353+0.2 EUR
382+0.19 EUR
404+0.18 EUR
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MMBF4391LT1G MMBF4391LT1G ONSEMI mmbf4391lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain-source voltage: 30V
Drain current: 50mA
On-state resistance: 30Ω
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -30V
auf Bestellung 877 Stücke:
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182+0.39 EUR
230+0.31 EUR
274+0.26 EUR
334+0.21 EUR
468+0.15 EUR
496+0.14 EUR
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FDMS86300DC FDMS86300DC ONSEMI fdms86300dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86200DC FDMS86200DC ONSEMI fdms86200dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS3669S ONSEMI fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Mounting: SMD
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FDMS7620S ONSEMI fdms7620s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS9600S ONSEMI fdms9600s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMMBT3906LT1G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT3906LT3G ONSEMI mmbt3906lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT3906WT1G ONSEMI mmbt3904wt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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SMMBT4403LT1G ONSEMI mmbt4403lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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SMMBT5401LT1G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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DFB2040 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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MC74AC273DWG MC74AC273DWG ONSEMI mc74ac273-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 80µA
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
auf Bestellung 108 Stücke:
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33+2.22 EUR
59+1.23 EUR
89+0.81 EUR
94+0.76 EUR
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MJE15029G MJE15029G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 30MHz
auf Bestellung 56 Stücke:
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31+2.36 EUR
34+2.14 EUR
38+1.89 EUR
44+1.63 EUR
47+1.54 EUR
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FDP52N20 FDP52N20 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE92CE32B8FA259&compId=FDP52N20%2C%20FDPF52N20T.pdf?ci_sign=9f6ce9ee9503deb9021bb393eee3bd9d4a8dfe0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 126 Stücke:
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25+2.87 EUR
37+1.96 EUR
39+1.86 EUR
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GBPC3510 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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SMMBFJ310LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ309LT1G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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SMMBFJ310LT3G ONSEMI mmbfj309lt1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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TIP29AG TIP29AG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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1SS400T1G 1SS400T1G ONSEMI 1ss400t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Features of semiconductor devices: fast switching
auf Bestellung 4729 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
695+0.1 EUR
981+0.073 EUR
1145+0.062 EUR
2025+0.035 EUR
2137+0.033 EUR
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FDD86367 fdd86367-d.pdf
FDD86367
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK
On-state resistance: 8.4mΩ
Kind of package: reel; tape
Drain current: 100A
Drain-source voltage: 80V
Gate charge: 88nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DPAK
Mounting: SMD
Polarisation: unipolar
Power dissipation: 227W
Type of transistor: N-MOSFET
auf Bestellung 1082 Stücke:
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Anzahl Preis
37+1.96 EUR
43+1.7 EUR
45+1.62 EUR
250+1.56 EUR
Mindestbestellmenge: 37
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MUR4100ERLG pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E785B41B562469&compId=MUR4100EG.PDF?ci_sign=6ec0a09b52ba861bb5b832eeafd06f4868dd2d05
MUR4100ERLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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BDX33CG pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DBD53DA19E66469&compId=BDX33CG.PDF?ci_sign=3e2e1e0a6e5046e04fe17405a866f364761d2af7
BDX33CG
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 70W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 70W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
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MC33072ADR2G mc34071-d.pdf
MC33072ADR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 5mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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HCPL0601R2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA41520D6&compId=HCPL0601R2.pdf?ci_sign=9b4be696ae09de472a9902dc111e95488bba8b37
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
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MC7812BDTRKG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE9CC6D414260C7&compId=MC78xx.pdf?ci_sign=5c967ea61e70b06d60938bce0de2bd299bbedecb
MC7812BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; linear
Mounting: SMD
Case: DPAK
Tolerance: ±4%
Output voltage: 12V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
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MC74ACT157DG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629E403DCC0D3&compId=MC74AC157-D.pdf?ci_sign=36156d6c35acd4719a4447ea4ea15ebcb26e9a75
MC74ACT157DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Type of integrated circuit: digital
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: ACT
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
57+1.26 EUR
71+1.02 EUR
103+0.7 EUR
109+0.66 EUR
Mindestbestellmenge: 57
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BAR43 pVersion=0046&contRep=ZT&docId=E1C0470F8C513FF1A6F5005056AB5A8F&compId=BAR43S-Fairchild.pdf?ci_sign=f178fb60d1f38a78de55a303d0225c404b97425c
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.75A
Kind of package: reel; tape
Power dissipation: 0.29W
Reverse recovery time: 5ns
Produkt ist nicht verfügbar
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FGY100T65SCDT fgy100t65scdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 375W; TO247-3
Mounting: THT
Collector-emitter voltage: 650V
Gate-emitter voltage: ±25V
Collector current: 100A
Pulsed collector current: 300A
Type of transistor: IGBT
Power dissipation: 375W
Kind of package: tube
Gate charge: 157nC
Case: TO247-3
Produkt ist nicht verfügbar
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FDMS86101A fdms86101a-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; Idm: 180A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 180A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DF01S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33
DF01S
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.3 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
FOD3184 pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2E8F526280C7&compId=FOD3184.pdf?ci_sign=238b6861301fd8dd12b510bd0abc56cec050c790
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Output voltage: 0...35V
Turn-off time: 24ns
Turn-on time: 38ns
Produkt ist nicht verfügbar
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FOD3184S fod3184-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: MOSFET
Insulation voltage: 5kV
Case: PDIP8
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Produkt ist nicht verfügbar
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74VHC14MX 74vhc14-d.pdf
74VHC14MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Produkt ist nicht verfügbar
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NRVUS1JFA us1mfa-d.pdf
NRVUS1JFA
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Kind of package: reel; tape
Reverse recovery time: 75ns
Max. forward impulse current: 30A
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP126TU pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD5255FCD64E469&compId=TIP125TU.pdf?ci_sign=c4bc071cfd25ab10ad0567a30e4d480ddd469f6a
TIP126TU
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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NTS4001NT1G nts4001n-d.pdf
NTS4001NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 3314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
500+0.14 EUR
618+0.12 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 209
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NTA4001NT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A05DC8338C745&compId=NTA4001N.PDF?ci_sign=158eea1d141787f6bae3bfa25c215b650f3c3e32
NTA4001NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.238A; 0.3W; SC75; ESD
Case: SC75
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.238A
On-state resistance: 3.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±10V
Mounting: SMD
Produkt ist nicht verfügbar
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TL431BVDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Tolerance: ±0.4%
Reference voltage: 2.495V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74ACT14DG mc74ac14-d.pdf
MC74ACT14DG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
66+1.08 EUR
83+0.86 EUR
114+0.63 EUR
120+0.6 EUR
Mindestbestellmenge: 49
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MC74ACT14DR2G mc74ac14-d.pdf
MC74ACT14DR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Number of inputs: 1
Produkt ist nicht verfügbar
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MC74ACT14DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629A14A2080D3&compId=MC74AC14-D.pdf?ci_sign=dd814371e0791516565a1348800cb1239e54622a
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Technology: TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: ACT
Manufacturer series: ACT
Number of inputs: 1
Kind of integrated circuit: hex; inverter; Schmitt trigger
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3B58CC4595EA&compId=ES3J.pdf?ci_sign=93ab53866dcb3ff171e1b0f6a58dc0dfcd60c637
ES3B
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
Produkt ist nicht verfügbar
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74VHC74MTCX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B3D387B53820&compId=74VHC74-D.pdf?ci_sign=fa8580f39a0b0aededb51a6dcfcf5b46481181af
74VHC74MTCX
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; VHC; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: SO14
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
auf Bestellung 2246 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
148+0.49 EUR
188+0.38 EUR
290+0.25 EUR
305+0.23 EUR
Mindestbestellmenge: 73
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MC74ACT245DWR2G mc74ac245-d.pdf
MC74ACT245DWR2G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: ACT
Operating temperature: -40...85°C
auf Bestellung 668 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.2 EUR
46+1.57 EUR
55+1.32 EUR
90+0.8 EUR
96+0.75 EUR
500+0.72 EUR
Mindestbestellmenge: 33
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SMUN5113DW1T1G dta144ed-d.pdf
SMUN5113DW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
391+0.18 EUR
538+0.13 EUR
1009+0.071 EUR
1226+0.058 EUR
1309+0.055 EUR
Mindestbestellmenge: 209
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LM258N description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EC5324E8DD5EA&compId=LM258N.pdf?ci_sign=5d434e955dfe687a2837f56207f6215941d7ab64
LM258N
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: -40...105°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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2SA2040-TL-E en6913-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Mounting: SMD
Frequency: 330MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 8A
Type of transistor: PNP
Power dissipation: 1W
Polarisation: bipolar
Kind of package: reel; tape
Case: DPAK
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
77+0.93 EUR
113+0.63 EUR
120+0.6 EUR
500+0.58 EUR
Mindestbestellmenge: 61
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NTGS4141NT1G ntgs4141n-d.pdf
NTGS4141NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.6A; 1W; TSOP6
Drain-source voltage: 30V
Drain current: 3.6A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: TSOP6
auf Bestellung 4619 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
194+0.37 EUR
298+0.24 EUR
315+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 109
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FAN73895MX fan73895-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-side
Case: SO28-W
Output current: -650...350mA
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Voltage class: 600V
Produkt ist nicht verfügbar
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KSD363RTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE4675102AF80D6&compId=KSD363.pdf?ci_sign=03781a5dad92b1925c36c46743892906c729210f
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 120V; 6A; 40W; TO220AB
Frequency: 10MHz
Collector-emitter voltage: 120V
Current gain: 40...80
Collector current: 6A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBFJ270 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B1701B2CC77E27&compId=MMBFJ270-DTE.pdf?ci_sign=4f92c244f51728701677d48f3336f29f6cfc3019
MMBFJ270
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
139+0.52 EUR
191+0.37 EUR
237+0.3 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
MMBFJ176 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
MMBFJ176
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
On-state resistance: 250Ω
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
Mindestbestellmenge: 84
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MMBFJ108 j109-d.pdf
MMBFJ108
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 80mA; 0.35W; SuperSOT-3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 80mA
Power dissipation: 0.35W
Case: SuperSOT-3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 8Ω
auf Bestellung 1598 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
167+0.43 EUR
243+0.29 EUR
257+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 122
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MMBFJ110 mmbfj110-d.pdf
MMBFJ110
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
On-state resistance: 18Ω
Produkt ist nicht verfügbar
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1N5929BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B76911095C60D8&compId=1N59xxB.pdf?ci_sign=08740ab8d99b6d9aec88108daea62be4df615f0c
1N5929BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; reel,tape; CASE59; single diode; 1uA; 1N59xxB
Case: CASE59
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 1µA
Power dissipation: 3W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: 1N59xxB
Mounting: THT
auf Bestellung 4215 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
247+0.29 EUR
319+0.22 EUR
363+0.2 EUR
474+0.15 EUR
501+0.14 EUR
Mindestbestellmenge: 193
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SMMBT2907ALT1G mmbt2907alt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT2907ALT3G mmbt2907alt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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NSS40201LT1G nss40201l-d.pdf
NSS40201LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Current gain: 200
Collector current: 2A
Type of transistor: NPN
Application: automotive industry
Case: SOT23; TO236AB
Polarisation: bipolar
Kind of package: reel; tape
Power dissipation: 0.54W
Frequency: 150MHz
Collector-emitter voltage: 40V
auf Bestellung 610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
236+0.3 EUR
325+0.22 EUR
353+0.2 EUR
382+0.19 EUR
404+0.18 EUR
Mindestbestellmenge: 157
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MMBF4391LT1G mmbf4391lt1-d.pdf
MMBF4391LT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Mounting: SMD
Case: SOT23
Gate current: 50mA
Drain-source voltage: 30V
Drain current: 50mA
On-state resistance: 30Ω
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -30V
auf Bestellung 877 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
182+0.39 EUR
230+0.31 EUR
274+0.26 EUR
334+0.21 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 182
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FDMS86300DC fdms86300dc-d.pdf
FDMS86300DC
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86200DC fdms86200dc-d.pdf
FDMS86200DC
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS3669S fdms3669s-d.pdf ONSM-S-A0003585221-1.pdf?hkey=EC6BD57738AE6E33B588C5F9AD3CEFA7
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Case: Power56
Drain-source voltage: 30/30V
Drain current: 24/60A
On-state resistance: 14.5/7.1mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.2/2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 24/34nC
Kind of channel: enhancement
Gate-source voltage: ±20/±12V
Mounting: SMD
Produkt ist nicht verfügbar
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FDMS7620S fdms7620s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS9600S fdms9600s-d.pdf
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 32/30A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 32/30A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13/8.3mΩ
Mounting: SMD
Gate charge: 13/29nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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SMMBT3906LT1G mmbt3906lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT3906LT3G mmbt3906lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT3906WT1G mmbt3904wt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT4403LT1G mmbt4403lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Produkt ist nicht verfügbar
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SMMBT5401LT1G mmbt5401lt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
Produkt ist nicht verfügbar
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DFB2040 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2D936488840DC&compId=DFB20xx.pdf?ci_sign=acc8c342310d07484802840a4e397ecb76a692aa
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 20A; Ifsm: 250A
Case: TS-6P
Max. off-state voltage: 0.4kV
Load current: 20A
Kind of package: tube
Leads: flat pin
Max. forward voltage: 1.1V
Max. forward impulse current: 250A
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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MC74AC273DWG mc74ac273-d.pdf
MC74AC273DWG
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; SO20; reel,tape; 80uA
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 80µA
Trigger: positive-edge-triggered
Kind of integrated circuit: D flip-flop
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.22 EUR
59+1.23 EUR
89+0.81 EUR
94+0.76 EUR
Mindestbestellmenge: 33
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MJE15029G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf
MJE15029G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Collector-emitter voltage: 120V
Collector current: 8A
Type of transistor: PNP
Power dissipation: 50W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Case: TO220AB
Frequency: 30MHz
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
34+2.14 EUR
38+1.89 EUR
44+1.63 EUR
47+1.54 EUR
Mindestbestellmenge: 31
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FDP52N20 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE92CE32B8FA259&compId=FDP52N20%2C%20FDPF52N20T.pdf?ci_sign=9f6ce9ee9503deb9021bb393eee3bd9d4a8dfe0b
FDP52N20
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 357W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.87 EUR
37+1.96 EUR
39+1.86 EUR
Mindestbestellmenge: 25
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GBPC3510 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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SMMBFJ310LT1G mmbfj309lt1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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SMMBFJ309LT1G mmbfj309lt1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 30mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 30mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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SMMBFJ310LT3G mmbfj309lt1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 60mA; 225mW; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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TIP29AG pVersion=0046&contRep=ZT&docId=005056AB82531ED999CB51EFCFAE9820&compId=TIP29A-C_TIP30A-C.pdf?ci_sign=d0ea39944a06a9b634764395908636d5e2cab8c9
TIP29AG
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Produkt ist nicht verfügbar
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1SS400T1G 1ss400t1-d.pdf
1SS400T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Features of semiconductor devices: fast switching
auf Bestellung 4729 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
695+0.1 EUR
981+0.073 EUR
1145+0.062 EUR
2025+0.035 EUR
2137+0.033 EUR
Mindestbestellmenge: 500
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