| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NLAS5123MUR2G | ONSEMI |
 Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA Mounting: SMD Case: uDFN6 Kind of package: reel; tape Number of channels: 1 Supply voltage: 1.65...5.5V DC Type of integrated circuit: analog switch Kind of output: SPDT Operating temperature: -40...85°C Quiescent current: 1µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDN302P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±12V On-state resistance: 84mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1302 Stücke: Lieferzeit 14-21 Tag (e) |
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MDB6S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: MicroDIP Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 3518 Stücke: Lieferzeit 14-21 Tag (e) |
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FFSH40120ADN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 50A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.75V |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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FFB20UP20DN-F085 | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: common cathode; double Case: D2PAK Kind of package: reel; tape Application: automotive industry Reverse recovery time: 40ns Max. forward voltage: 1.15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FFSB2065BDN-F085 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 23.6A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Application: automotive industry Max. forward voltage: 1.75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FFSH1265BDN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 14.4A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSH2065BDN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FFSH4065BDN-F085 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Application: automotive industry Max. forward voltage: 1.7V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCV57302DSADJR4G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.24...13V Output current: 3A Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDN5630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3 Mounting: SMD Technology: PowerTrench® Features of semiconductor devices: logic level Drain current: 1.7A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SuperSOT-3 On-state resistance: 0.18Ω Power dissipation: 0.5W Gate charge: 10nC Polarisation: unipolar |
auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1076BAP100G | ONSEMI |
Category: Integrated circuits - Unclassified Description: NCP1076BAP100G |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
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KSA708YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.7A Power dissipation: 0.8W Case: TO92 Current gain: 120...240 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 9509 Stücke: Lieferzeit 14-21 Tag (e) |
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FGD3245G2-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FGD3245G2-F085V | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 450V; 23A; 150W; DPAK Type of transistor: IGBT Collector-emitter voltage: 450V Collector current: 23A Power dissipation: 150W Case: DPAK Mounting: SMD Gate charge: 23nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDP61N20 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 38.5A Power dissipation: 417W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBG014N120M3P | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 452A Power dissipation: 326W Gate charge: 377nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 106A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG015N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 422A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG045N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 184A Power dissipation: 121W Gate charge: 105nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 44A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -5...18V On-state resistance: 40mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG060N090SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 176A Power dissipation: 3.6W Gate charge: 88nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 5.8A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: -5...15V On-state resistance: 135mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG070N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 93A Power dissipation: 86W Gate charge: 57nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 25A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V On-state resistance: 136mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTBG080N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W Mounting: SMD Case: D2PAK-7 Kind of package: reel; tape Pulsed drain current: 110A Power dissipation: 89W Gate charge: 56nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 21A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -5...20V On-state resistance: 121mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVTFS016N06CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 32A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 160A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NVMFS016N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 18W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 226A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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LM350T | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...33V Output current: 3A Case: TO220 Mounting: THT Number of channels: 1 Heatsink thickness: 0.51...0.61mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 50W Case: DPAK Mounting: SMD Gate charge: 26nC Technology: QFET® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.36Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTR5105PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 544 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5251B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMSZ5248CT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZMMSZ5248ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NZD9V1MUT5G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: X3DFN2 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: NZDxxMU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDB13AN06A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: 62A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 34mΩ Mounting: SMD Power dissipation: 115W |
auf Bestellung 751 Stücke: Lieferzeit 14-21 Tag (e) |
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| SS33 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.5V Max. off-state voltage: 30V Load current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NTTFS4C02NTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 164A Pulsed drain current: 663A Power dissipation: 2.5W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.25mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP730BMT500TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 5V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP730BMT300TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP730BMT330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3.3V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP730BMTADJTBG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP730ASN300T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP730BMT250TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.5V Output current: 0.15A Case: WDFN6 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP730ASNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
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NCP730ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 3.3V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
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NCP730ASN250T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.5V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCP730ASN280T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 2.8V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Manufacturer series: NCP730 Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTK3139PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.57A Power dissipation: 0.45W Case: SOT723 Gate-source voltage: ±6V On-state resistance: 2.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.76A Power dissipation: 313mW Case: SC89 Gate-source voltage: ±6V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.1nC |
auf Bestellung 3327 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -3A Power dissipation: 0.96W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1280 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z13VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
auf Bestellung 630 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z13VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxST1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM3Z13VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±2% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxB |
Produkt ist nicht verfügbar |
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MM3Z13VC | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape; MM3Z Type of diode: Zener Power dissipation: 0.2W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD323F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3Z |
Produkt ist nicht verfügbar |
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SZMM3Z13VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxST1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| SZMM5Z13VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5ZxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SZMM3Z13VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 13V Mounting: SMD Tolerance: ±6% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZ1SMA5928BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NVMFS5C410NLWFAFT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH75M65L4Q1PTG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 650V Collector current: 59A Case: PIM27 Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Pulsed collector current: 176A Mechanical mounting: screw Technology: SiC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 21 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NXH240B120H3Q1P1G | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32 Type of semiconductor module: IGBT Technology: SiC Mechanical mounting: screw Pulsed collector current: 276A Application: for UPS; Inverter Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit Semiconductor structure: SiC diode/transistor Case: PIM32 Gate-emitter voltage: ±20V Collector current: 92A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 21 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCV4266ST50T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.15A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 5V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCV4266-2CST33T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.15A Type of integrated circuit: voltage regulator Application: automotive industry Output voltage: 3.3V Kind of package: reel; tape Case: SOT223 Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NLAS5123MUR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT
Operating temperature: -40...85°C
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; uDFN6; 1.65÷5.5VDC; reel,tape; 1uA
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Kind of output: SPDT
Operating temperature: -40...85°C
Quiescent current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDN302P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±12V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1302 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 123+ | 0.69 EUR |
| 141+ | 0.61 EUR |
| 205+ | 0.42 EUR |
| 243+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| MDB6S |
|
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 3518 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 118+ | 0.73 EUR |
| 140+ | 0.61 EUR |
| 181+ | 0.48 EUR |
| 262+ | 0.32 EUR |
| 500+ | 0.25 EUR |
| FFSH40120ADN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 50A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.75V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 30.23 EUR |
| 4+ | 27.33 EUR |
| 10+ | 25.32 EUR |
| 30+ | 23.87 EUR |
| FFB20UP20DN-F085 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 40ns
Max. forward voltage: 1.15V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; 40ns; D2PAK; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 40ns
Max. forward voltage: 1.15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSB2065BDN-F085 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 23.6A; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 23.6A
Semiconductor structure: single diode
Case: D2PAK
Kind of package: reel; tape
Application: automotive industry
Max. forward voltage: 1.75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH1265BDN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 14.4A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 14.4A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 14.4A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH2065BDN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH4065BDN-F085 |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Kind of package: tube
Application: automotive industry
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV57302DSADJR4G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.24...13V
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 3A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.24...13V
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN5630 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Gate charge: 10nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Technology: PowerTrench®
Features of semiconductor devices: logic level
Drain current: 1.7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SuperSOT-3
On-state resistance: 0.18Ω
Power dissipation: 0.5W
Gate charge: 10nC
Polarisation: unipolar
auf Bestellung 2560 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 0.79 EUR |
| 149+ | 0.57 EUR |
| 217+ | 0.39 EUR |
| 257+ | 0.33 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| NCP1076BAP100G |
|
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 2.07 EUR |
| 350+ | 1.77 EUR |
| KSA708YBU |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.7A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.7A
Power dissipation: 0.8W
Case: TO92
Current gain: 120...240
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 9509 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 329+ | 0.26 EUR |
| 382+ | 0.23 EUR |
| 468+ | 0.18 EUR |
| 610+ | 0.14 EUR |
| 747+ | 0.11 EUR |
| 1000+ | 0.11 EUR |
| 5000+ | 0.099 EUR |
| FGD3245G2-F085C |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGD3245G2-F085V |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 23nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 23A; 150W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 450V
Collector current: 23A
Power dissipation: 150W
Case: DPAK
Mounting: SMD
Gate charge: 23nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDP61N20 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 38.5A
Power dissipation: 417W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 3.56 EUR |
| 29+ | 3.01 EUR |
| 34+ | 2.53 EUR |
| 50+ | 2.25 EUR |
| NTBG014N120M3P |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 452A
Power dissipation: 326W
Gate charge: 377nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 106A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 106A; Idm: 452A; 326W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 452A
Power dissipation: 326W
Gate charge: 377nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 106A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBG015N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 422A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 422A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NTBG045N065SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 184A
Power dissipation: 121W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 44A; Idm: 184A; 121W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 184A
Power dissipation: 121W
Gate charge: 105nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...18V
On-state resistance: 40mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG060N090SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 176A
Power dissipation: 3.6W
Gate charge: 88nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 5.8A; Idm: 176A; 3.6W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 176A
Power dissipation: 3.6W
Gate charge: 88nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
On-state resistance: 135mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG070N120M3S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 93A
Power dissipation: 86W
Gate charge: 57nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 93A; 86W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 93A
Power dissipation: 86W
Gate charge: 57nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
On-state resistance: 136mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NTBG080N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 110A
Power dissipation: 89W
Gate charge: 56nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 110A; 89W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 110A
Power dissipation: 89W
Gate charge: 56nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 21A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 121mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| NVTFS016N06CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 32A; Idm: 160A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 32A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
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| NVMFS016N06CT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Produkt ist nicht verfügbar
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| LM350T |
|
Hersteller: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷33V; 3A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...33V
Output current: 3A
Case: TO220
Mounting: THT
Number of channels: 1
Heatsink thickness: 0.51...0.61mm
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| FQD10N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
Produkt ist nicht verfügbar
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| NTR5105PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 544 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 353+ | 0.24 EUR |
| 407+ | 0.21 EUR |
| 544+ | 0.15 EUR |
| MMSZ5251B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| MMSZ5248CT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxC
Produkt ist nicht verfügbar
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| SZMMSZ5248ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
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| NZD9V1MUT5G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 9.1V; SMD; X3DFN2; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: X3DFN2
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: NZDxxMU
Produkt ist nicht verfügbar
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| FDB13AN06A0 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Power dissipation: 115W
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 2.45 EUR |
| 40+ | 2.17 EUR |
| 43+ | 2.01 EUR |
| 100+ | 1.87 EUR |
| SS33 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Load current: 3A
Produkt ist nicht verfügbar
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| NTTFS4C02NTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 164A; Idm: 663A; 2.5W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 164A
Pulsed drain current: 663A
Power dissipation: 2.5W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.25mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NCP730BMT500TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
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| NCP730BMT300TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Produkt ist nicht verfügbar
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| NCP730BMT330TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730BMTADJTBG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN300T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; TSOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730BMT250TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASNADJT1G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN330T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN250T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NCP730ASN280T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; TSOT23-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Manufacturer series: NCP730
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
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| NTK3139PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.57A
Power dissipation: 0.45W
Case: SOT723
Gate-source voltage: ±6V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| NTE4151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 313mW; SC89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.76A
Power dissipation: 313mW
Case: SC89
Gate-source voltage: ±6V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.1nC
auf Bestellung 3327 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 521+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| 784+ | 0.11 EUR |
| 819+ | 0.1 EUR |
| 867+ | 0.099 EUR |
| 1000+ | 0.092 EUR |
| 1500+ | 0.088 EUR |
| 3000+ | 0.086 EUR |
| NTR2101PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -3A; 0.96W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -3A
Power dissipation: 0.96W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 161+ | 0.54 EUR |
| 187+ | 0.45 EUR |
| 272+ | 0.31 EUR |
| 319+ | 0.26 EUR |
| 391+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| MM3Z13VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
auf Bestellung 630 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 630+ | 0.13 EUR |
| MM3Z13VST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Produkt ist nicht verfügbar
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| MM3Z13VB |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxB
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| MM3Z13VC |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 13V; SMD; SOD323F; single diode; reel,tape; MM3Z
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3Z
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| SZMM3Z13VST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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| SZMM5Z13VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| SZMM3Z13VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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| SZ1SMA5928BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 13V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| NVMFS5C410NLWFAFT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NXH75M65L4Q1PTG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 59A
Case: PIM27
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 176A
Mechanical mounting: screw
Technology: SiC
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 59A; PIM27; SiC
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Collector current: 59A
Case: PIM27
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Pulsed collector current: 176A
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
Mindestbestellmenge: 21 Stücke
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| NXH240B120H3Q1P1G |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Type of semiconductor module: IGBT
Technology: SiC
Mechanical mounting: screw
Pulsed collector current: 276A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Case: PIM32
Gate-emitter voltage: ±20V
Collector current: 92A
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1.2kV; Ic: 92A; PIM32
Type of semiconductor module: IGBT
Technology: SiC
Mechanical mounting: screw
Pulsed collector current: 276A
Application: for UPS; Inverter
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: SiC diode/transistor
Case: PIM32
Gate-emitter voltage: ±20V
Collector current: 92A
Produkt ist nicht verfügbar
Mindestbestellmenge: 21 Stücke
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| NCV4266ST50T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 5V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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| NCV4266-2CST33T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; SOT223; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.15A
Type of integrated circuit: voltage regulator
Application: automotive industry
Output voltage: 3.3V
Kind of package: reel; tape
Case: SOT223
Number of channels: 1
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