FGH60T65SHD-F155 onsemi
Hersteller: onsemiDescription: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.31 EUR |
| 30+ | 5.29 EUR |
| 120+ | 4.40 EUR |
| 510+ | 3.75 EUR |
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Technische Details FGH60T65SHD-F155 onsemi
Description: IGBT TRENCH FS 650V 120A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34.6 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/87ns, Switching Energy: 1.69mJ (on), 630µJ (off), Test Condition: 400V, 60A, 6Ohm, 15V, Gate Charge: 102 nC, Part Status: Active, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 349 W.
Weitere Produktangebote FGH60T65SHD-F155 nach Preis ab 3.87 EUR bis 9.50 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| FGH60T65SHD-F155 | Hersteller : onsemi / Fairchild |
IGBTs FS3TIGBT TO247 60A 650V |
auf Bestellung 636 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH60T65SHD-F155 | Hersteller : ON Semiconductor |
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FGH60T65SHD-F155 | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 650V 120A 349W 3-Pin(3+Tab) TO-247 Tube |
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FGH60T65SHD-F155 | Hersteller : ONSEMI |
Description: ONSEMI - FGH60T65SHD-F155 - IGBT, 650 V, 60 A FIELD STOP TRENCH SVHC: Lead (17-Jan-2022) |
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| FGH60T65SHD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGH60T65SHD-F155 | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 174W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 174W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 180A Mounting: THT Gate charge: 102nC Kind of package: tube |
Produkt ist nicht verfügbar |