auf Bestellung 525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.66 EUR |
| 10+ | 5.76 EUR |
| 30+ | 5.40 EUR |
| 120+ | 4.58 EUR |
| 270+ | 3.43 EUR |
| 510+ | 3.34 EUR |
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Technische Details FGHL40T65MQD onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 33 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 22ns/109ns, Switching Energy: 860µJ (on), 520µJ (off), Test Condition: 400V, 40A, 10Ohm, 15V, Gate Charge: 86 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 238 W.
Weitere Produktangebote FGHL40T65MQD nach Preis ab 3.19 EUR bis 8.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FGHL40T65MQD | Hersteller : onsemi |
 Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 33 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/109ns Switching Energy: 860µJ (on), 520µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 86 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
auf Bestellung 621 Stücke: Lieferzeit 10-14 Tag (e) |
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| FGHL40T65MQD | Hersteller : ON Semiconductor |
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auf Bestellung 152 Stücke: Lieferzeit 21-28 Tag (e) |
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| FGHL40T65MQD | Hersteller : ON Semiconductor |
650 V, 40 A Field Stop Trench IGBT |
Produkt ist nicht verfügbar |
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| FGHL40T65MQD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 86nC Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FGHL40T65MQD | Hersteller : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 86nC Kind of package: tube |
Produkt ist nicht verfügbar |