| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MC34152DR2G | ONSEMI |
 Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: non-inverting Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS26 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS26 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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ISL9V5036S3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 31A Power dissipation: 250W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
auf Bestellung 638 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74VHC1G132DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NVTFS5116PLWFTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8 On-state resistance: 52mΩ Mounting: SMD Pulsed drain current: -126A Power dissipation: 10W Gate charge: 25nC Polarisation: unipolar Drain current: -14A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFNW8 |
auf Bestellung 1401 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS5116PLTAG | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -10A Power dissipation: 1.6W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 924 Stücke: Lieferzeit 14-21 Tag (e) |
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| NRTS6100TFSTAG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape Mounting: SMD Semiconductor structure: single diode Case: WDFN8 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.62V Max. off-state voltage: 0.1kV Load current: 6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NRTS6100TFSTWG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape Mounting: SMD Semiconductor structure: single diode Case: WDFN8 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.62V Max. off-state voltage: 0.1kV Load current: 6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NRTS6100TFSTXG | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape Mounting: SMD Semiconductor structure: single diode Case: WDFN8 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.62V Max. off-state voltage: 0.1kV Load current: 6A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUN5213DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 140 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC70-6; SC88; SOT363 Collector current: 0.1A Mounting: SMD Manufacturer standard package: 3000pcs. |
auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) |
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MC7812BDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 15.5...27V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC7812BD2TR4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 12V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 15.5...27V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDPF12N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 30nC Technology: UniFET™ Drain current: 6.9A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±30V On-state resistance: 0.65Ω |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB12N50FTM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Mounting: SMD Case: D2PAK Pulsed drain current: 46A Power dissipation: 165W Gate charge: 30nC Polarisation: unipolar Technology: UniFET™ Drain current: 6.9A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.7Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDB12N50TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK Mounting: SMD Case: D2PAK Pulsed drain current: 46A Power dissipation: 165W Gate charge: 30nC Polarisation: unipolar Technology: DMOS; UniFET™ Drain current: 6.9A Kind of channel: enhancement Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.65Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74VHCT86ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; -55÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Operating temperature: -55...85°C Kind of package: reel; tape Quiescent current: 40µA Family: VHCT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74VHCT86ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; level shifter; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of gate: XOR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: VHCT Manufacturer series: VHCT Kind of integrated circuit: level shifter |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FSL306LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Output voltage: 650V Frequency: 50kHz Number of channels: 1 Case: DIP7 Mounting: THT Operating temperature: -40...125°C Topology: buck; buck-boost; flyback Input voltage: 85...265V On-state resistance: 18Ω Kind of package: tube Power: 3/7W Application: SMPS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FSL306LRLX | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.45A Output voltage: 650V Frequency: 50kHz Number of channels: 1 Case: LSOP7 Mounting: SMD Operating temperature: -40...125°C Topology: buck; buck-boost; flyback Input voltage: 85...265V On-state resistance: 18Ω Kind of package: reel; tape Power: 3/7W Application: SMPS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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SS24 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS24 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BYW29-200G | ONSEMI |
 Category: THT universal diodesDescription: Diode: switching; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 100A Case: TO220AC Kind of package: tube Heatsink thickness: 1.14...1.39mm Reverse recovery time: 35ns |
auf Bestellung 988 Stücke: Lieferzeit 14-21 Tag (e) |
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ECH8695R-TL-W | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8 Mounting: SMD Kind of channel: enhancement Drain-source voltage: 24V Application: charging control Type of transistor: N-MOSFET x2 Gate-source voltage: ±12.5V Kind of package: reel; tape Semiconductor structure: common drain Case: ECH8 On-state resistance: 9.1mΩ Pulsed drain current: 60A Power dissipation: 1.4W Gate charge: 10nC Polarisation: unipolar Version: ESD Drain current: 11A |
auf Bestellung 2060 Stücke: Lieferzeit 14-21 Tag (e) |
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QED123 | ONSEMI |
Category: IR LEDs Description: IR transmitter; 5mm; 880nm; diffused,orange; 70mW; 16°; 1.7VDC Radiant power: 70mW Mounting: THT Wavelength of peak sensitivity: 890nm Wavelength: 880nm Shape: round Viewing angle: 16° Type of diode: IR transmitter LED diameter: 5mm LED lens: diffused; orange Operating voltage: 1.7V DC LED current: 100mA |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB28N30TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 28A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.129Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 696 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP3335ADMADJR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.34V Output voltage: 1.25...10V Output current: 0.5A Case: Micro8 Mounting: SMD Manufacturer series: NCP3335A Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 2 Input voltage: 2.6...12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMBT3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBRS3201T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.59V Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Type of diode: Schottky rectifying |
auf Bestellung 2424 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC33201DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Number of channels: single; 1 Operating temperature: -40...105°C Kind of package: reel; tape Input offset voltage: 9mV Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail Input bias current: 0.25µA Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Input offset current: 100nA Bandwidth: 2.2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| MC33201VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Number of channels: single; 1 Operating temperature: -55...125°C Kind of package: reel; tape Input offset voltage: 13mV Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail Input bias current: 0.5µA Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Input offset current: 200nA Bandwidth: 2.2MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MM74HCT240MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 2 Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Kind of output: 3-state Technology: CMOS; TTL Quiescent current: 160µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTH4L013N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 340W Case: TO247-4 Mounting: THT Pulsed drain current: 505A Gate charge: 254nC Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 107A Kind of channel: enhancement Drain-source voltage: 1.2kV Gate-source voltage: -10...22V Kind of package: tube On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14024BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 7bit,asynchronous,binary counter; CMOS; SMD; SO14 Type of integrated circuit: digital Kind of integrated circuit: 7bit; asynchronous; binary counter Technology: CMOS Mounting: SMD Case: SO14 Family: HEF4000B Operating temperature: -40...85°C Supply voltage: 3...18V DC Kind of package: reel; tape Quiescent current: 600µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NLV14024BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous counter; TTL; SMD; SO14; HEF4000B; 600uA Type of integrated circuit: digital Kind of integrated circuit: asynchronous counter Technology: TTL Mounting: SMD Case: SO14 Family: HEF4000B Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Quiescent current: 600µA Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BVSS84LT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -50V Drain current: -130mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2966 Stücke: Lieferzeit 14-21 Tag (e) |
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MC100ELT23DR2G | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator Number of channels: 2 Supply voltage: 4.75...5.25V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100ELT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MJW3281AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3 Type of transistor: NPN Polarisation: bipolar Power dissipation: 200W Case: TO247-3 Mounting: THT Kind of package: tube Collector current: 15A Collector-emitter voltage: 230V Frequency: 30MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MMBT3906 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMBD6050LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW Mounting: SMD Reverse recovery time: 50ns Max. forward voltage: 1.25V Power dissipation: 0.4W Max. off-state voltage: 250V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Case: SOT23 Capacitance: 5pF Type of diode: switching |
auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT54C | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74LVX14DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; CMOS Type of integrated circuit: digital Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14NB Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVX Manufacturer series: LVX Integrated circuit features: tolerates a voltage of 5V on the inputs Kind of integrated circuit: hex; inverter; Schmitt trigger |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74LVX14DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA Kind of input: with Schmitt trigger Family: LVX |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74LVX4245DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver; translator Number of channels: 8 Technology: TTL Mounting: SMD Case: SO24 Manufacturer series: LVX Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 2.7...5.5V DC Quiescent current: 80µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDP3632 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Power dissipation: 310W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FSV20150V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 150V; 20A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 150V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.84V Max. forward impulse current: 270A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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FCP125N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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FCB125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FCP125N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVB125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FCPF125N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NTHL125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NTPF125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NVHL025N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 300A Power dissipation: 595W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUN2214T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 33799 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA113EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.26W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Current gain: 3...5 |
auf Bestellung 23945 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2111T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 3000pcs. Current gain: 35...60 |
auf Bestellung 1984 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN2113T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Current gain: 80...140 |
auf Bestellung 5985 Stücke: Lieferzeit 14-21 Tag (e) |
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SMUN2111T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC34152DR2G |
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Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: non-inverting
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS26 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS26 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V5036S3ST |
|
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
auf Bestellung 638 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.89 EUR |
| 17+ | 5.09 EUR |
| 19+ | 4.7 EUR |
| 50+ | 4.15 EUR |
| MC74VHC1G132DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS5116PLWFTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
On-state resistance: 52mΩ
Mounting: SMD
Pulsed drain current: -126A
Power dissipation: 10W
Gate charge: 25nC
Polarisation: unipolar
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFNW8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -14A; Idm: -126A; 10W; WDFNW8
On-state resistance: 52mΩ
Mounting: SMD
Pulsed drain current: -126A
Power dissipation: 10W
Gate charge: 25nC
Polarisation: unipolar
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFNW8
auf Bestellung 1401 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 69+ | 1.24 EUR |
| 200+ | 1.12 EUR |
| NVTFS5116PLTAG |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; 1.6W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -10A
Power dissipation: 1.6W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 924 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 1.69 EUR |
| 83+ | 1.02 EUR |
| 101+ | 0.84 EUR |
| 110+ | 0.77 EUR |
| 200+ | 0.73 EUR |
| NRTS6100TFSTAG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: WDFN8
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: WDFN8
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRTS6100TFSTWG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: WDFN8
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: WDFN8
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NRTS6100TFSTXG |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: WDFN8
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; WDFN8; SMD; 100V; 6A; reel,tape
Mounting: SMD
Semiconductor structure: single diode
Case: WDFN8
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 6A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN5213DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 140
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 424+ | 0.2 EUR |
| 464+ | 0.19 EUR |
| MC7812BDTRKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC7812BD2TR4G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDPF12N50T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Drain current: 6.9A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 30nC
Technology: UniFET™
Drain current: 6.9A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 2.69 EUR |
| 36+ | 2.42 EUR |
| 40+ | 2.13 EUR |
| 50+ | 1.93 EUR |
| FDB12N50FTM-WS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Mounting: SMD
Case: D2PAK
Pulsed drain current: 46A
Power dissipation: 165W
Gate charge: 30nC
Polarisation: unipolar
Technology: UniFET™
Drain current: 6.9A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.7Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Mounting: SMD
Case: D2PAK
Pulsed drain current: 46A
Power dissipation: 165W
Gate charge: 30nC
Polarisation: unipolar
Technology: UniFET™
Drain current: 6.9A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.7Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDB12N50TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Mounting: SMD
Case: D2PAK
Pulsed drain current: 46A
Power dissipation: 165W
Gate charge: 30nC
Polarisation: unipolar
Technology: DMOS; UniFET™
Drain current: 6.9A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.65Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; Idm: 46A; 165W; D2PAK
Mounting: SMD
Case: D2PAK
Pulsed drain current: 46A
Power dissipation: 165W
Gate charge: 30nC
Polarisation: unipolar
Technology: DMOS; UniFET™
Drain current: 6.9A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.65Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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Stück im Wert von UAH
| MC74VHCT86ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; -55÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; -55÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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Stück im Wert von UAH
| MC74VHCT86ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; level shifter; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHCT
Manufacturer series: VHCT
Kind of integrated circuit: level shifter
Category: Gates, inverters
Description: IC: digital; level shifter; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: VHCT
Manufacturer series: VHCT
Kind of integrated circuit: level shifter
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSL306LRN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: tube
Power: 3/7W
Application: SMPS
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: tube
Power: 3/7W
Application: SMPS
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSL306LRLX |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: LSOP7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: reel; tape
Power: 3/7W
Application: SMPS
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 450mA; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: LSOP7
Mounting: SMD
Operating temperature: -40...125°C
Topology: buck; buck-boost; flyback
Input voltage: 85...265V
On-state resistance: 18Ω
Kind of package: reel; tape
Power: 3/7W
Application: SMPS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS24 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SS24 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BYW29-200G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; Ifsm: 100A; TO220AC; tube; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 35ns
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 1.54 EUR |
| 66+ | 1.3 EUR |
| 80+ | 1.07 EUR |
| 103+ | 0.83 EUR |
| ECH8695R-TL-W |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 24V
Application: charging control
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12.5V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: ECH8
On-state resistance: 9.1mΩ
Pulsed drain current: 60A
Power dissipation: 1.4W
Gate charge: 10nC
Polarisation: unipolar
Version: ESD
Drain current: 11A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 24V
Application: charging control
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12.5V
Kind of package: reel; tape
Semiconductor structure: common drain
Case: ECH8
On-state resistance: 9.1mΩ
Pulsed drain current: 60A
Power dissipation: 1.4W
Gate charge: 10nC
Polarisation: unipolar
Version: ESD
Drain current: 11A
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 90+ | 0.95 EUR |
| 110+ | 0.77 EUR |
| 157+ | 0.55 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.42 EUR |
| QED123 |
|
Hersteller: ONSEMI
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,orange; 70mW; 16°; 1.7VDC
Radiant power: 70mW
Mounting: THT
Wavelength of peak sensitivity: 890nm
Wavelength: 880nm
Shape: round
Viewing angle: 16°
Type of diode: IR transmitter
LED diameter: 5mm
LED lens: diffused; orange
Operating voltage: 1.7V DC
LED current: 100mA
Category: IR LEDs
Description: IR transmitter; 5mm; 880nm; diffused,orange; 70mW; 16°; 1.7VDC
Radiant power: 70mW
Mounting: THT
Wavelength of peak sensitivity: 890nm
Wavelength: 880nm
Shape: round
Viewing angle: 16°
Type of diode: IR transmitter
LED diameter: 5mm
LED lens: diffused; orange
Operating voltage: 1.7V DC
LED current: 100mA
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 122+ | 0.7 EUR |
| 149+ | 0.58 EUR |
| FDB28N30TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 28A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 28A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 696 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 3.92 EUR |
| 31+ | 2.76 EUR |
| 38+ | 2.26 EUR |
| 41+ | 2.09 EUR |
| 100+ | 1.77 EUR |
| NCP3335ADMADJR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.34V
Output voltage: 1.25...10V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷10V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.34V
Output voltage: 1.25...10V
Output current: 0.5A
Case: Micro8
Mounting: SMD
Manufacturer series: NCP3335A
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 2
Input voltage: 2.6...12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT3904 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBRS3201T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.59V
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.59V
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
auf Bestellung 2424 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.65 EUR |
| 89+ | 0.95 EUR |
| 99+ | 0.86 EUR |
| 123+ | 0.69 EUR |
| 135+ | 0.63 EUR |
| 250+ | 0.58 EUR |
| MC33201DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Number of channels: single; 1
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset voltage: 9mV
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.25µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Input offset current: 100nA
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Number of channels: single; 1
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset voltage: 9mV
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.25µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Input offset current: 100nA
Bandwidth: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC33201VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Number of channels: single; 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.5µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Input offset current: 200nA
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Number of channels: single; 1
Operating temperature: -55...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail
Input bias current: 0.5µA
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Input offset current: 200nA
Bandwidth: 2.2MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT240MTCX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 160µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L013N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 340W
Case: TO247-4
Mounting: THT
Pulsed drain current: 505A
Gate charge: 254nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 107A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -10...22V
Kind of package: tube
On-state resistance: 29mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 340W
Case: TO247-4
Mounting: THT
Pulsed drain current: 505A
Gate charge: 254nC
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 107A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -10...22V
Kind of package: tube
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14024BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 7bit,asynchronous,binary counter; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: 7bit; asynchronous; binary counter
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Category: Counters/dividers
Description: IC: digital; 7bit,asynchronous,binary counter; CMOS; SMD; SO14
Type of integrated circuit: digital
Kind of integrated circuit: 7bit; asynchronous; binary counter
Technology: CMOS
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NLV14024BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; HEF4000B; 600uA
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous counter
Technology: TTL
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Application: automotive industry
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; HEF4000B; 600uA
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous counter
Technology: TTL
Mounting: SMD
Case: SO14
Family: HEF4000B
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Quiescent current: 600µA
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BVSS84LT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2966 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 0.49 EUR |
| 224+ | 0.38 EUR |
| 260+ | 0.33 EUR |
| 374+ | 0.23 EUR |
| 435+ | 0.19 EUR |
| 596+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 1500+ | 0.12 EUR |
| MC100ELT23DR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Supply voltage: 4.75...5.25V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100ELT
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 2; 4.75÷5.25VDC
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator
Number of channels: 2
Supply voltage: 4.75...5.25V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100ELT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJW3281AG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 230V
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 230V
Frequency: 30MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MMBT3906 |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| MMBD6050LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.25V
Power dissipation: 0.4W
Max. off-state voltage: 250V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOT23
Capacitance: 5pF
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; 400mW
Mounting: SMD
Reverse recovery time: 50ns
Max. forward voltage: 1.25V
Power dissipation: 0.4W
Max. off-state voltage: 250V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOT23
Capacitance: 5pF
Type of diode: switching
auf Bestellung 1900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.17 EUR |
| 596+ | 0.14 EUR |
| 676+ | 0.13 EUR |
| 1017+ | 0.083 EUR |
| 1223+ | 0.069 EUR |
| 1839+ | 0.046 EUR |
| 1900+ | 0.044 EUR |
| BAT54C |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVX14DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; CMOS
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Manufacturer series: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Kind of integrated circuit: hex; inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; CMOS
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14NB
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVX
Manufacturer series: LVX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Kind of integrated circuit: hex; inverter; Schmitt trigger
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| MC74LVX14DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: LVX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: LVX
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| MC74LVX4245DWR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SO24
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...5.5V DC
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SO24
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 2.7...5.5V DC
Quiescent current: 80µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| FDP3632 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Power dissipation: 310W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV20150V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 270A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 150V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 150V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Max. forward impulse current: 270A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP125N65S3R0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCB125N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCH125N65S3R0-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP125N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVB125N65S3 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCPF125N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHL125N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTPF125N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVHL025N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MUN2214T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 33799 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 589+ | 0.14 EUR |
| 875+ | 0.098 EUR |
| 1044+ | 0.081 EUR |
| 1530+ | 0.056 EUR |
| 1767+ | 0.048 EUR |
| 3000+ | 0.039 EUR |
| 6000+ | 0.036 EUR |
| 9000+ | 0.033 EUR |
| DTA113EM3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.26W; SOT723; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.26W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
auf Bestellung 23945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1250+ | 0.068 EUR |
| 1316+ | 0.064 EUR |
| 1359+ | 0.063 EUR |
| 1421+ | 0.06 EUR |
| 1480+ | 0.057 EUR |
| 1548+ | 0.055 EUR |
| 1624+ | 0.052 EUR |
| 2000+ | 0.05 EUR |
| MUN2111T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 3000pcs.
Current gain: 35...60
auf Bestellung 1984 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 334+ | 0.25 EUR |
| 455+ | 0.19 EUR |
| 550+ | 0.15 EUR |
| 1042+ | 0.082 EUR |
| 1534+ | 0.056 EUR |
| 1737+ | 0.049 EUR |
| MUN2113T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 80...140
auf Bestellung 5985 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 358+ | 0.24 EUR |
| 481+ | 0.18 EUR |
| 569+ | 0.15 EUR |
| 1073+ | 0.08 EUR |
| 1678+ | 0.051 EUR |
| 1894+ | 0.045 EUR |
| 3000+ | 0.038 EUR |
| SMUN2111T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.28 EUR |