| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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MM74HCT273MTC | ONSEMI |
 Category: Flip-FlopsDescription: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20WB Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Kind of package: tube |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74HCT273ADWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT273ADTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HCT273ADWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM74HCT273MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MM74HCT273WMX | ONSEMI |
Category: Flip-Flops Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; octal Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20WB Operating temperature: -55...125°C Family: HCT Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MUR460 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 3A Kind of package: bulk Case: DO27 Reverse recovery time: 50ns Forward voltage at If: 1.25V Max. load current: 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| CAT24M01XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 1.8÷5.5V; 1MHz; SOIC8 Operating voltage: 1.8...5.5V Memory: 1Mb EEPROM Memory organisation: 128kx8bit Clock frequency: 1MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Interface: I2C Kind of package: reel; tape Kind of interface: serial Mounting: SMD Case: SOIC8 Operating temperature: -40...85°C Access time: 400ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDS6898AZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; Idm: 38A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.4A Pulsed drain current: 38A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 14mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDD9409-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 150W Case: DPAK Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Polarisation: unipolar Gate charge: 42nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVMFD5C478NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8 Type of transistor: N-MOSFET x2 Drain-source voltage: 40V Drain current: 27A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 90A Polarisation: unipolar Gate charge: 6.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVMFD5C478NWFT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8 Type of transistor: N-MOSFET x2 Drain-source voltage: 40V Drain current: 27A Power dissipation: 12W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 90A Polarisation: unipolar Gate charge: 6.3nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74LCX16244DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Type of integrated circuit: digital Case: TSSOP48 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Number of channels: 16 Kind of output: 3-state Kind of integrated circuit: buffer; line driver; non-inverting Manufacturer series: LCX |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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FDT86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223 Kind of channel: enhancement Case: SOT223 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 4.9nC On-state resistance: 128mΩ Power dissipation: 2.2W Drain current: 2.8A Pulsed drain current: 12A Drain-source voltage: 150V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FDC86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W Kind of channel: enhancement Case: SuperSOT-6 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 6nC On-state resistance: 273mΩ Power dissipation: 1.6W Drain current: 2.3A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 150V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDA032N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Case: TO3PN Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 0.22µC On-state resistance: 3.2mΩ Power dissipation: 37.5W Drain current: 120A Gate-source voltage: ±20V Pulsed drain current: 940A Drain-source voltage: 70V Kind of channel: enhancement |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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FNA41560B2 | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; 15A; Uoper: 600V; Uinsul: 2kV; 41W Type of integrated circuit: driver Output current: 15A Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Insulation voltage: 2kV Power dissipation: 41W |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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CPH6153-TL-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 3A; 1.3W; SOT26 Mounting: SMD Collector-emitter voltage: 20V Case: SOT26 Collector current: 3A Power dissipation: 1.3W Current gain: 200...560 Frequency: 400MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MMSZ4679T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 2V Type of diode: Zener |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBA124EDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 60...100 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBA124EF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 60...100 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBA124XDXV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 80...130 Mounting: SMD Quantity in set/package: 4000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBA124XF3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 297mW Case: SOT1123 Current gain: 80...130 Mounting: SMD Quantity in set/package: 8000pcs. Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC14015BDR2G | ONSEMI |
Category: Shift registers Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B Technology: CMOS Number of inputs: 3 Kind of package: reel; tape Case: SOIC16 Family: HEF4000B Kind of integrated circuit: 4bit; shift register Number of channels: 2 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CS51414EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uout: 4.5÷40V; 1.5A; SO8; SMD; 520kHz; Ch: 1 Type of integrated circuit: PMIC Mounting: SMD Case: SO8 Number of channels: 1 Output current: 1.5A Output voltage: 4.5...40V Frequency: 520kHz Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: DC/DC converter |
auf Bestellung 2061 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 0.5A Case: SOT416 Max. forward voltage: 1.25V Power dissipation: 0.36W Reverse recovery time: 6ns Capacitance: 2pF Leakage current: 50µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVBAS16TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Case: SC75 Max. forward voltage: 1V Application: automotive industry Reverse recovery time: 6ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FES10G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO277 Reverse recovery time: 40ns Load current: 10A Max. forward impulse current: 150A Max. off-state voltage: 0.4kV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FES10D | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO277 Reverse recovery time: 40ns Load current: 10A Max. forward impulse current: 150A Max. off-state voltage: 200V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FES10J | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 10A; reel,tape; Ifsm: 150A; TO277; 30ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Case: TO277 Reverse recovery time: 30ns Load current: 10A Max. forward impulse current: 150A Max. off-state voltage: 0.6kV Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MJH11019G | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 200V; 15A; 150W; TO247-3 Kind of transistor: Darlington Mounting: THT Type of transistor: PNP Case: TO247-3 Kind of package: tube Collector current: 15A Frequency: 3MHz Power dissipation: 150W Collector-emitter voltage: 200V Polarisation: bipolar |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6301N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDD8880 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 58A Power dissipation: 55W Case: DPAK Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 1250 Stücke: Lieferzeit 14-21 Tag (e) |
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ES1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Leakage current: 0.1mA Power dissipation: 1.47W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FSV12120V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape Max. off-state voltage: 120V Case: TO277 Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.79V Load current: 12A Max. forward impulse current: 220A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDN304P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3109 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN304PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 2087 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6312P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6 Case: SuperSOT-6 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Kind of package: reel; tape Mounting: SMD Drain-source voltage: -20V Drain current: -2.3A On-state resistance: 0.15Ω Power dissipation: 0.96W Gate-source voltage: ±8V Polarisation: unipolar |
auf Bestellung 2474 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTBG040N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 43A Pulsed drain current: 240A Power dissipation: 178W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 106nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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1N5358BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 22V Kind of package: bulk Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| 1N5358BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 22V Kind of package: reel; tape Case: CASE017AA Mounting: THT Semiconductor structure: single diode Manufacturer series: 1N53xxB Tolerance: ±5% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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FDP083N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3 Mounting: THT Power dissipation: 294W Polarisation: unipolar Drain current: 83A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 8.3mΩ |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTTFS8D1N08HTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8 Mounting: SMD Pulsed drain current: 216A Power dissipation: 63W Gate charge: 23nC Polarisation: unipolar Drain current: 61A Kind of channel: enhancement Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: WDFN8 On-state resistance: 8.3mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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EGP10C | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 1A; reel,tape; Ifsm: 30A; DO41; 50ns Kind of package: reel; tape Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode Case: DO41 Type of diode: rectifying Reverse recovery time: 50ns Mounting: THT Max. forward impulse current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP1253BSN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Case: TSOP6 Kind of integrated circuit: AC/DC switcher; PWM controller Number of channels: 1 Frequency: 92...108kHz Operating voltage: 8.8...25.5V DC Topology: flyback Mounting: SMD Output current: 0.3...0.5A Type of integrated circuit: PMIC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP1256ASN100T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Case: TSOP6 Kind of integrated circuit: AC/DC switcher; PWM controller Number of channels: 1 Frequency: 93...107kHz Operating voltage: 8.9...26V DC Topology: flyback Mounting: SMD Output current: -0.5...0.5A Type of integrated circuit: PMIC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NVMFD5C668NLT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Pulsed drain current: 454A Power dissipation: 29W Gate charge: 21.3nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 6.5mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVMFD5C668NLWFT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Pulsed drain current: 454A Power dissipation: 29W Gate charge: 21.3nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 6.5mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NCP711BMT300TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; WDFN6; SMD; Ch: 1 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Output voltage: 3V Kind of package: reel; tape Case: WDFN6 Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP711ASNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 1.2...17V Case: TSOP5 Number of channels: 1 Tolerance: ±1% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP711BMT330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; WDFN6; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 3.3V Case: WDFN6 Number of channels: 1 Tolerance: ±1% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP711BMTADJTBG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA Mounting: SMD Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 1.2...17V Case: WDFN6 Number of channels: 1 Tolerance: ±1% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP711ASN330T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; TSOP5; SMD Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP711 Input voltage: 2.7...18V Output current: 0.1A Type of integrated circuit: voltage regulator Voltage drop: 0.355V Operating temperature: -40...125°C Output voltage: 3.3V Case: TSOP5 Number of channels: 1 Tolerance: ±1% |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP711BMT500TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; WDFN6; SMD; Ch: 1 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Output current: 0.1A Type of integrated circuit: voltage regulator Output voltage: 5V Kind of package: reel; tape Case: WDFN6 Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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BCW70LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Collector-emitter voltage: 45V Power dissipation: 0.225W Polarisation: bipolar Type of transistor: PNP Current gain: 215...500 Kind of package: reel; tape Collector current: 0.1A |
auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL0600 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: logic Insulation voltage: 3.75kV Case: SO8 Output voltage: 7V Turn-off time: 50ns Turn-on time: 50ns |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA5927BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 468 Stücke: Lieferzeit 14-21 Tag (e) |
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SZ1SMA5927BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1SMA5921BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 6.8V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 3264 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMA5918BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 4969 Stücke: Lieferzeit 14-21 Tag (e) |
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| MM74HCT273MTC |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Kind of package: tube
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; TSSOP20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20WB
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Kind of package: tube
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 70+ | 1.23 EUR |
| 82+ | 1.04 EUR |
| 115+ | 0.74 EUR |
| MC74HCT273ADWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT273ADTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HCT273ADWG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: tube
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT273MTCX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MM74HCT273WMX |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS,TTL; HCT; SMD; SO20WB
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20WB
Operating temperature: -55...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUR460 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; bulk; DO27; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Kind of package: bulk
Case: DO27
Reverse recovery time: 50ns
Forward voltage at If: 1.25V
Max. load current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT24M01XI-T2 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 1.8÷5.5V; 1MHz; SOIC8
Operating voltage: 1.8...5.5V
Memory: 1Mb EEPROM
Memory organisation: 128kx8bit
Clock frequency: 1MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Access time: 400ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 1.8÷5.5V; 1MHz; SOIC8
Operating voltage: 1.8...5.5V
Memory: 1Mb EEPROM
Memory organisation: 128kx8bit
Clock frequency: 1MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of package: reel; tape
Kind of interface: serial
Mounting: SMD
Case: SOIC8
Operating temperature: -40...85°C
Access time: 400ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDS6898AZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; Idm: 38A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Pulsed drain current: 38A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; Idm: 38A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.4A
Pulsed drain current: 38A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD9409-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 42nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVMFD5C478NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFD5C478NWFT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 27A; Idm: 90A; 12W; DFN8
Type of transistor: N-MOSFET x2
Drain-source voltage: 40V
Drain current: 27A
Power dissipation: 12W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 90A
Polarisation: unipolar
Gate charge: 6.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74LCX16244DTG |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Case: TSSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Type of integrated circuit: digital
Case: TSSOP48
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Manufacturer series: LCX
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 17.02 EUR |
| FDT86244 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.8A; Idm: 12A; 2.2W; SOT223
Kind of channel: enhancement
Case: SOT223
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4.9nC
On-state resistance: 128mΩ
Power dissipation: 2.2W
Drain current: 2.8A
Pulsed drain current: 12A
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDC86244 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Case: SuperSOT-6
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.3A; Idm: 10A; 1.6W
Kind of channel: enhancement
Case: SuperSOT-6
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 273mΩ
Power dissipation: 1.6W
Drain current: 2.3A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDA032N08 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Case: TO3PN
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 0.22µC
On-state resistance: 3.2mΩ
Power dissipation: 37.5W
Drain current: 120A
Gate-source voltage: ±20V
Pulsed drain current: 940A
Drain-source voltage: 70V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Case: TO3PN
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 0.22µC
On-state resistance: 3.2mΩ
Power dissipation: 37.5W
Drain current: 120A
Gate-source voltage: ±20V
Pulsed drain current: 940A
Drain-source voltage: 70V
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.1 EUR |
| 17+ | 5.06 EUR |
| FNA41560B2 |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 15A; Uoper: 600V; Uinsul: 2kV; 41W
Type of integrated circuit: driver
Output current: 15A
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 41W
Category: MOSFET/IGBT drivers
Description: IC: driver; 15A; Uoper: 600V; Uinsul: 2kV; 41W
Type of integrated circuit: driver
Output current: 15A
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Insulation voltage: 2kV
Power dissipation: 41W
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 22.05 EUR |
| CPH6153-TL-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 1.3W; SOT26
Mounting: SMD
Collector-emitter voltage: 20V
Case: SOT26
Collector current: 3A
Power dissipation: 1.3W
Current gain: 200...560
Frequency: 400MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 3A; 1.3W; SOT26
Mounting: SMD
Collector-emitter voltage: 20V
Case: SOT26
Collector current: 3A
Power dissipation: 1.3W
Current gain: 200...560
Frequency: 400MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ4679T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 2V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 2V
Type of diode: Zener
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 695+ | 0.12 EUR |
| 834+ | 0.1 EUR |
| 1296+ | 0.065 EUR |
| 1583+ | 0.054 EUR |
| 2033+ | 0.042 EUR |
| 2381+ | 0.036 EUR |
| 2632+ | 0.032 EUR |
| 3000+ | 0.031 EUR |
| NSBA124EDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA124EF3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 60...100
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA124XDXV6T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 22kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 4000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSBA124XF3T5G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 297mW; SOT1123; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 297mW
Case: SOT1123
Current gain: 80...130
Mounting: SMD
Quantity in set/package: 8000pcs.
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14015BDR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Category: Shift registers
Description: IC: digital; 4bit,shift register; Ch: 2; CMOS; SMD; SOIC16; HEF4000B
Technology: CMOS
Number of inputs: 3
Kind of package: reel; tape
Case: SOIC16
Family: HEF4000B
Kind of integrated circuit: 4bit; shift register
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CS51414EDR8G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 4.5÷40V; 1.5A; SO8; SMD; 520kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Number of channels: 1
Output current: 1.5A
Output voltage: 4.5...40V
Frequency: 520kHz
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 4.5÷40V; 1.5A; SO8; SMD; 520kHz; Ch: 1
Type of integrated circuit: PMIC
Mounting: SMD
Case: SO8
Number of channels: 1
Output current: 1.5A
Output voltage: 4.5...40V
Frequency: 520kHz
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
auf Bestellung 2061 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 2.86 EUR |
| 42+ | 2.06 EUR |
| 45+ | 1.9 EUR |
| 50+ | 1.87 EUR |
| BAS16TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Reverse recovery time: 6ns
Capacitance: 2pF
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT416; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 0.5A
Case: SOT416
Max. forward voltage: 1.25V
Power dissipation: 0.36W
Reverse recovery time: 6ns
Capacitance: 2pF
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBAS16TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC75; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Case: SC75
Max. forward voltage: 1V
Application: automotive industry
Reverse recovery time: 6ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES10G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO277
Reverse recovery time: 40ns
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO277
Reverse recovery time: 40ns
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.4kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES10D |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO277
Reverse recovery time: 40ns
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; reel,tape; Ifsm: 150A; TO277; 40ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO277
Reverse recovery time: 40ns
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 200V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES10J |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; Ifsm: 150A; TO277; 30ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO277
Reverse recovery time: 30ns
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; reel,tape; Ifsm: 150A; TO277; 30ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO277
Reverse recovery time: 30ns
Load current: 10A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJH11019G |
|
Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Mounting: THT
Type of transistor: PNP
Case: TO247-3
Kind of package: tube
Collector current: 15A
Frequency: 3MHz
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 200V; 15A; 150W; TO247-3
Kind of transistor: Darlington
Mounting: THT
Type of transistor: PNP
Case: TO247-3
Kind of package: tube
Collector current: 15A
Frequency: 3MHz
Power dissipation: 150W
Collector-emitter voltage: 200V
Polarisation: bipolar
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.81 EUR |
| 14+ | 6.38 EUR |
| 18+ | 4.9 EUR |
| 20+ | 4.27 EUR |
| FDC6301N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.22A; 0.9W; SuperSOT-6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD8880 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 58A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 58A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 61+ | 1.4 EUR |
| 66+ | 1.3 EUR |
| 89+ | 0.95 EUR |
| 105+ | 0.81 EUR |
| 500+ | 0.6 EUR |
| ES1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Leakage current: 0.1mA
Power dissipation: 1.47W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Leakage current: 0.1mA
Power dissipation: 1.47W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSV12120V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape
Max. off-state voltage: 120V
Case: TO277
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Load current: 12A
Max. forward impulse current: 220A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 12A; reel,tape
Max. off-state voltage: 120V
Case: TO277
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Load current: 12A
Max. forward impulse current: 220A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN304P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SOT23
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3109 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 0.99 EUR |
| 104+ | 0.82 EUR |
| 118+ | 0.73 EUR |
| 168+ | 0.51 EUR |
| 194+ | 0.44 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| 1500+ | 0.26 EUR |
| 3000+ | 0.24 EUR |
| FDN304PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2087 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 128+ | 0.67 EUR |
| 173+ | 0.49 EUR |
| 195+ | 0.44 EUR |
| 500+ | 0.36 EUR |
| FDC6312P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -20V
Drain current: -2.3A
On-state resistance: 0.15Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
Polarisation: unipolar
auf Bestellung 2474 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 57+ | 1.51 EUR |
| 74+ | 1.15 EUR |
| 84+ | 1.02 EUR |
| 113+ | 0.75 EUR |
| 129+ | 0.67 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.48 EUR |
| NTBG040N120SC1 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5358BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| 1N5358BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 5W; 22V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
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| FDP083N15A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Mounting: THT
Power dissipation: 294W
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 8.3mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 294W; TO220-3
Mounting: THT
Power dissipation: 294W
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 8.3mΩ
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.18 EUR |
| 17+ | 5.31 EUR |
| 19+ | 4.71 EUR |
| NTTFS8D1N08HTAG |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 63W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 8.3mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 61A; Idm: 216A; 63W; WDFN8
Mounting: SMD
Pulsed drain current: 216A
Power dissipation: 63W
Gate charge: 23nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: WDFN8
On-state resistance: 8.3mΩ
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| EGP10C |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 1A; reel,tape; Ifsm: 30A; DO41; 50ns
Kind of package: reel; tape
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 50ns
Mounting: THT
Max. forward impulse current: 30A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 1A; reel,tape; Ifsm: 30A; DO41; 50ns
Kind of package: reel; tape
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Type of diode: rectifying
Reverse recovery time: 50ns
Mounting: THT
Max. forward impulse current: 30A
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Im Einkaufswagen
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| NCP1253BSN100T1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Case: TSOP6
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 92...108kHz
Operating voltage: 8.8...25.5V DC
Topology: flyback
Mounting: SMD
Output current: 0.3...0.5A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Case: TSOP6
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 92...108kHz
Operating voltage: 8.8...25.5V DC
Topology: flyback
Mounting: SMD
Output current: 0.3...0.5A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCP1256ASN100T1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Case: TSOP6
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 93...107kHz
Operating voltage: 8.9...26V DC
Topology: flyback
Mounting: SMD
Output current: -0.5...0.5A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Case: TSOP6
Kind of integrated circuit: AC/DC switcher; PWM controller
Number of channels: 1
Frequency: 93...107kHz
Operating voltage: 8.9...26V DC
Topology: flyback
Mounting: SMD
Output current: -0.5...0.5A
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NVMFD5C668NLT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFD5C668NLWFT1G |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8
Mounting: SMD
Case: DFN8
Kind of package: reel; tape
Pulsed drain current: 454A
Power dissipation: 29W
Gate charge: 21.3nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Produkt ist nicht verfügbar
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| NCP711BMT300TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 3V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 3V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
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| NCP711ASNADJT1G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP711BMT330TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; WDFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; WDFN6; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP711BMTADJTBG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷17V; 100mA
Mounting: SMD
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 1.2...17V
Case: WDFN6
Number of channels: 1
Tolerance: ±1%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP711ASN330T1G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; TSOP5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 100mA; TSOP5; SMD
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP711
Input voltage: 2.7...18V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Voltage drop: 0.355V
Operating temperature: -40...125°C
Output voltage: 3.3V
Case: TSOP5
Number of channels: 1
Tolerance: ±1%
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP711BMT500TBG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 5V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; WDFN6; SMD; Ch: 1
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.1A
Type of integrated circuit: voltage regulator
Output voltage: 5V
Kind of package: reel; tape
Case: WDFN6
Number of channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCW70LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.225W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 215...500
Kind of package: reel; tape
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.225W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 215...500
Kind of package: reel; tape
Collector current: 0.1A
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 342+ | 0.25 EUR |
| HCPL0600 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Output voltage: 7V
Turn-off time: 50ns
Turn-on time: 50ns
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: logic; Uinsul: 3.75kV; SO8; Uout: 7V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: logic
Insulation voltage: 3.75kV
Case: SO8
Output voltage: 7V
Turn-off time: 50ns
Turn-on time: 50ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 28.37 EUR |
| 1SMA5927BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 468 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 248+ | 0.35 EUR |
| 274+ | 0.31 EUR |
| 338+ | 0.25 EUR |
| 371+ | 0.23 EUR |
| 417+ | 0.2 EUR |
| SZ1SMA5927BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 12V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1SMA5921BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 6.8V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 3264 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 239+ | 0.36 EUR |
| 278+ | 0.31 EUR |
| 439+ | 0.19 EUR |
| 511+ | 0.17 EUR |
| 582+ | 0.14 EUR |
| 1SMA5918BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 4969 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 247+ | 0.35 EUR |
| 379+ | 0.23 EUR |
| 439+ | 0.19 EUR |
| 516+ | 0.17 EUR |
| 569+ | 0.15 EUR |
| 1000+ | 0.14 EUR |