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MUN2111T1G onsemi


dta114e-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Resistors Included: R1 and R2
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.071 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MUN2111T1G onsemi

Description: TRANS PREBIAS PNP 50V 0.1A SC59, Resistors Included: R1 and R2, Part Status: Active, Supplier Device Package: SC-59, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Power - Max: 230 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA.

Weitere Produktangebote MUN2111T1G nach Preis ab 0.044 EUR bis 0.38 EUR

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MUN2111T1G MUN2111T1G onsemi DTA114E_D-2310690.pdf Digital Transistors 100mA 50V BRT PNP
auf Bestellung 21269 Stücke:
Lieferzeit 10-14 Tag (e)
15+0.24 EUR
21+0.17 EUR
100+0.083 EUR
1000+0.075 EUR
3000+0.057 EUR
9000+0.052 EUR
24000+0.044 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUN2111T1G MUN2111T1G onsemi dta114e-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
97+0.21 EUR
155+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUN2111T1G DTA114E_D-2310690.pdf
Hersteller: onsemi
Digital Transistors 100mA 50V BRT PNP
auf Bestellung 21269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+0.24 EUR
21+0.17 EUR
100+0.083 EUR
1000+0.075 EUR
3000+0.057 EUR
9000+0.052 EUR
24000+0.044 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MUN2111T1G dta114e-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Power - Max: 230 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-59
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 5016 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
97+0.21 EUR
155+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 56 Stücke
Im Einkaufswagen  Stück im Wert von  UAH