| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DTC123TET1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ Mounting: SMD Base resistor: 2.2kΩ Power dissipation: 0.2/0.3W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Current gain: 160...350 Kind of package: reel; tape Case: SOT416 Collector current: 0.1A Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTC123JM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MURS140T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape Reverse recovery time: 75ns Mounting: SMD Max. forward voltage: 1.25V Max. off-state voltage: 0.4kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
auf Bestellung 1076 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MURS105T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Reverse recovery time: 35ns Mounting: SMD Max. forward voltage: 0.875V Max. off-state voltage: 50V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying |
auf Bestellung 2043 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MURS110T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.875V Kind of package: reel; tape Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| BZX79C5V1-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSVDTC123JET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N7002V | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NCV8406ASTT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 Supply voltage: 60V DC Kind of package: reel; tape On-state resistance: 0.46Ω Application: automotive industry |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74LVX4051DTG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Number of inputs: 8 Kind of package: tube Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Manufacturer series: LVX Operating temperature: -55...125°C Technology: CMOS |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MC74LVX4051DG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Number of inputs: 8 Kind of package: tube Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Manufacturer series: LVX Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC74LVX4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Number of inputs: 8 Kind of package: reel; tape Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Manufacturer series: LVX Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC74LVX4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Number of inputs: 8 Kind of package: reel; tape Family: LVX Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Manufacturer series: LVX Operating temperature: -55...125°C Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FSV15100V | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 250A Kind of package: reel; tape |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NTLJS3D0N02P8ZTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 20.2A Pulsed drain current: 81A Power dissipation: 2.4W Case: WDFN6 Gate-source voltage: ±12V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MC14052BDTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2 Type of integrated circuit: analog switch Output configuration: 4:1 Number of channels: 2 Case: TSSOP16 Supply voltage: 3...18V Mounting: SMD Resistance: 80Ω Operating temperature: -55...125°C Quiescent current: 600µA Kind of integrated circuit: demultiplexer; multiplexer; SPDT Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MC14052BDR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC Type of integrated circuit: analog switch Number of channels: 2 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 600µA Kind of output: DP4T Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTP185N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| NSVDTA144WET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NUP2114UPXV5T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT553 Number of channels: 2 Kind of package: reel; tape Version: ESD |
auf Bestellung 942 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NUP4114UCW1T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4 Type of diode: TVS array Max. off-state voltage: 5.5V Breakdown voltage: 6.5V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: SC88 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Number of channels: 4 |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NUP4114UPXV6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NUP4114UPXV6T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SZNUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SS12FP | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.45V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NZT7053 | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 200MHz Collector current: 1.5A Collector-emitter voltage: 100V Power dissipation: 1W Polarisation: bipolar Kind of transistor: Darlington |
auf Bestellung 3820 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NDS9948 | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -2A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NDC7003P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
auf Bestellung 2217 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2852 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 400/500mΩ Mounting: SMD Gate charge: 1.5/1.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NDT452AP | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2223 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NDC7001C | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.51/-0.34A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 4/10Ω Mounting: SMD Gate charge: 1.5/2.2nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair |
auf Bestellung 242 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±6V On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair |
auf Bestellung 3458 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3026 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 921 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NJW3281G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 200W Case: TO3P Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTR4502PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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DTC124XET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 80...150 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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J176-D74Z | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA Mounting: THT Gate current: 50mA Power dissipation: 0.35W Polarisation: unipolar Drain current: 2mA Type of transistor: P-JFET Gate-source voltage: 30V Kind of package: Ammo Pack Case: TO92 On-state resistance: 250Ω |
auf Bestellung 1439 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: common anode; double Case: SOT723 Mounting: SMD Kind of package: reel; tape Number of channels: 2 |
auf Bestellung 4315 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |
| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SRDA3.3-4DR2G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 3.3V Number of channels: 4 Kind of package: reel; tape Peak pulse power dissipation: 0.5kW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SZESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SZESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 5V; SOD923; reel,tape Mounting: SMD Breakdown voltage: 5V Version: ESD Max. off-state voltage: 3.3V Kind of package: reel; tape Case: SOD923 Type of diode: TVS |
auf Bestellung 2418 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SZUESD3.3DT5G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC74AC273DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered |
auf Bestellung 1247 Stücke: Lieferzeit 14-21 Tag (e) |
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| 15GN03CA-TB-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Mounting: SMD Kind of package: reel; tape Frequency: 1.5GHz |
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 |
RB520S30T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
RB520S30T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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 |
SZMMSZ4700T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG Application: automotive industry |
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 |
1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
auf Bestellung 4372 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5258BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 3840 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
FDN340P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -10A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 5967 Stücke: Lieferzeit 14-21 Tag (e) |
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GBU6K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Max. forward impulse current: 175A Max. forward voltage: 1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 6A Kind of package: tube Case: GBU Type of bridge rectifier: single-phase |
auf Bestellung 682 Stücke: Lieferzeit 14-21 Tag (e) |
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|
GBU6D | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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GBU6J | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTC123TET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 0.2/0.3W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 160...350
Kind of package: reel; tape
Case: SOT416
Collector current: 0.1A
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 0.2/0.3W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 160...350
Kind of package: reel; tape
Case: SOT416
Collector current: 0.1A
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DTC123JM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MURS140T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Reverse recovery time: 75ns
Mounting: SMD
Max. forward voltage: 1.25V
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Reverse recovery time: 75ns
Mounting: SMD
Max. forward voltage: 1.25V
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
auf Bestellung 1076 Stücke:
Lieferzeit 14-21 Tag (e)
| MURS105T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Reverse recovery time: 35ns
Mounting: SMD
Max. forward voltage: 0.875V
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Reverse recovery time: 35ns
Mounting: SMD
Max. forward voltage: 0.875V
Max. off-state voltage: 50V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
auf Bestellung 2043 Stücke:
Lieferzeit 14-21 Tag (e)
| MURS110T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Kind of package: reel; tape
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS007N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX79C5V1-T50A |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVDTC123JET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7002V |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV8406ASTT1G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
Supply voltage: 60V DC
Kind of package: reel; tape
On-state resistance: 0.46Ω
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
Supply voltage: 60V DC
Kind of package: reel; tape
On-state resistance: 0.46Ω
Application: automotive industry
auf Bestellung 519 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74LVX4051DTG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: tube
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: tube
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
| MC74LVX4051DG |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: tube
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: tube
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVX4051DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: reel; tape
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: reel; tape
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74LVX4051DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: reel; tape
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Number of inputs: 8
Kind of package: reel; tape
Family: LVX
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Manufacturer series: LVX
Operating temperature: -55...125°C
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSV15100V |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)
| NTLJS3D0N02P8ZTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20.2A
Pulsed drain current: 81A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20.2A
Pulsed drain current: 81A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14052BDTR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2
Type of integrated circuit: analog switch
Output configuration: 4:1
Number of channels: 2
Case: TSSOP16
Supply voltage: 3...18V
Mounting: SMD
Resistance: 80Ω
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2
Type of integrated circuit: analog switch
Output configuration: 4:1
Number of channels: 2
Case: TSSOP16
Supply voltage: 3...18V
Mounting: SMD
Resistance: 80Ω
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14052BDR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP185N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| NSVDTA144WET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NUP2114UPXV5T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
auf Bestellung 942 Stücke:
Lieferzeit 14-21 Tag (e)
| NUP4114UCW1T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Number of channels: 4
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
| NUP4114UPXV6T1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUP4114UPXV6T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNUP4114UCLW1T2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS12FP |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZT7053 |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
auf Bestellung 3820 Stücke:
Lieferzeit 14-21 Tag (e)
| NDS9948 |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2480 Stücke:
Lieferzeit 14-21 Tag (e)
| NDC7003P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
auf Bestellung 2217 Stücke:
Lieferzeit 14-21 Tag (e)
| NTD20P06LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2852 Stücke:
Lieferzeit 14-21 Tag (e)
| NTZD3155CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 400/500mΩ
Mounting: SMD
Gate charge: 1.5/1.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| NDT452AP |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2223 Stücke:
Lieferzeit 14-21 Tag (e)
| NDC7001C |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
| NTZD3155CT2G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±6V
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
auf Bestellung 3458 Stücke:
Lieferzeit 14-21 Tag (e)
| NVJD5121NT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3026 Stücke:
Lieferzeit 14-21 Tag (e)
| NVMFS5113PLT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 921 Stücke:
Lieferzeit 14-21 Tag (e)
| NTR4171PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
| NJW3281G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| NTD25P03LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR4502PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
| DTC124XET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...150
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)
| J176-D74Z |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Mounting: THT
Gate current: 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 2mA
Type of transistor: P-JFET
Gate-source voltage: 30V
Kind of package: Ammo Pack
Case: TO92
On-state resistance: 250Ω
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Mounting: THT
Gate current: 50mA
Power dissipation: 0.35W
Polarisation: unipolar
Drain current: 2mA
Type of transistor: P-JFET
Gate-source voltage: 30V
Kind of package: Ammo Pack
Case: TO92
On-state resistance: 250Ω
auf Bestellung 1439 Stücke:
Lieferzeit 14-21 Tag (e)
| UESD3.3DT5G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
auf Bestellung 4315 Stücke:
Lieferzeit 14-21 Tag (e)
| ESD9X3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SRDA3.3-4DR2G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZESD9X3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| SZESD9C3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| ESD9C3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Mounting: SMD
Breakdown voltage: 5V
Version: ESD
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Case: SOD923
Type of diode: TVS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Mounting: SMD
Breakdown voltage: 5V
Version: ESD
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Case: SOD923
Type of diode: TVS
auf Bestellung 2418 Stücke:
Lieferzeit 14-21 Tag (e)
| SZUESD3.3DT5G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| MC74AC273DWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
auf Bestellung 1247 Stücke:
Lieferzeit 14-21 Tag (e)
| 15GN03CA-TB-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
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| RB520S30T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| RB520S30T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| SZMMSZ4700T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
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| 1SMA5938BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 4372 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5258BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3840 Stücke:
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| FDN340P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5967 Stücke:
Lieferzeit 14-21 Tag (e)
| GBU6K |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
auf Bestellung 682 Stücke:
Lieferzeit 14-21 Tag (e)
| GBU6D |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| GBU6J |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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