NTP185N60S5H onsemi
auf Bestellung 808 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.37 EUR |
| 10+ | 4.29 EUR |
| 100+ | 2.85 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.38 EUR |
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Technische Details NTP185N60S5H onsemi
Description: MOSFET N-CH 600V 15A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V, Power Dissipation (Max): 116W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 1.4mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V.
Weitere Produktangebote NTP185N60S5H nach Preis ab 2.29 EUR bis 6.48 EUR
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NTP185N60S5H | Hersteller : onsemi |
 Description: MOSFET N-CH 600V 15A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 7.5A, 10V Power Dissipation (Max): 116W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 1.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
auf Bestellung 2370 Stücke: Lieferzeit 10-14 Tag (e) |
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