| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| NRVBB40L45CTT4G | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Max. load current: 20A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBT2907A | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSS40501UW3T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: WDFN3 Power dissipation: 1.5W Collector current: 5A Collector-emitter voltage: 40V Frequency: 150MHz Application: automotive industry Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NSS40500UW3T2G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Mounting: SMD Type of transistor: PNP Kind of package: reel; tape Case: WDFN3 Power dissipation: 1.5W Collector current: 5A Collector-emitter voltage: 40V Application: automotive industry Polarisation: bipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NC7SZ74L8X | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: UQFN8 Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: 7SZ |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS3100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.62V Kind of package: reel; tape |
auf Bestellung 3647 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F4TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY171M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4470 | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD On-state resistance: 14mΩ Power dissipation: 2.5W Gate-source voltage: ±20V Drain current: 12.5A Drain-source voltage: 40V Case: SO8 Kind of package: reel; tape |
auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRF2545CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.62V Max. off-state voltage: 45V Load current: 12.5A x2 Max. load current: 25A Max. forward impulse current: 150A Case: TO220FP Kind of package: tube Semiconductor structure: common cathode; double |
auf Bestellung 591 Stücke: Lieferzeit 14-21 Tag (e) |
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SS39 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 90V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape |
auf Bestellung 2735 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54CTT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC70 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDS2582 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMS86202 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 64A Pulsed drain current: 240A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FDMS86202ET120 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 72A Pulsed drain current: 538A Power dissipation: 187W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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H11G2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Mounting: THT Number of channels: 1 Collector-emitter voltage: 80V CTR@If: 100%@10mA Insulation voltage: 4.17kV Case: DIP6 Kind of output: Darlington Type of optocoupler: optocoupler |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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MJF45H11G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Mounting: THT Collector current: 10A Power dissipation: 50W Current gain: 60 Collector-emitter voltage: 80V Frequency: 40MHz Polarisation: bipolar Case: TO220FP Type of transistor: PNP Kind of package: tube |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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H11G1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Mounting: SMD Number of channels: 1 Collector-emitter voltage: 100V CTR@If: 100%@10mA Insulation voltage: 4.17kV Case: Gull wing 6 Kind of output: transistor Type of optocoupler: optocoupler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| H11G2SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Manufacturer series: H11G_ Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 80V CTR@If: 1000%@10mA Insulation voltage: 4.17kV Case: PDIP6 Kind of output: Darlington Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MJB45H11G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Power dissipation: 50W Current gain: 60 Collector-emitter voltage: 80V Polarisation: bipolar Case: D2PAK Type of transistor: PNP Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM20 Gate-source voltage: -8...18V On-state resistance: 10mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 900V Power dissipation: 352W Topology: NTC thermistor; Vienna Rectifier Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH003P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 350A Pulsed drain current: 700A Drain-source voltage: 1.2kV Power dissipation: 979W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH004P120M3F2PTNG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 7.5mΩ Drain current: 338A Pulsed drain current: 676A Drain-source voltage: 1.2kV Power dissipation: 1098W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH003P120M3F2PTNG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 435A Pulsed drain current: 870A Drain-source voltage: 1.2kV Power dissipation: 1482W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 14.6mΩ Drain current: 191A Pulsed drain current: 382A Drain-source voltage: 1.2kV Power dissipation: 556W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH004P120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 7.5mΩ Drain current: 284A Pulsed drain current: 568A Drain-source voltage: 1.2kV Power dissipation: 785W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -15...25V On-state resistance: 7.28mΩ Drain current: 304A Pulsed drain current: 912A Drain-source voltage: 1.2kV Power dissipation: 950W Topology: MOSFET half-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH007F120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 15.9mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 1.2kV Power dissipation: 353W Topology: H-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH008T120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 15mΩ Drain current: 127A Pulsed drain current: 387A Drain-source voltage: 1.2kV Power dissipation: 371W Topology: 3-level inverter TNPC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH011F120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 21.9mΩ Drain current: 105A Pulsed drain current: 316A Drain-source voltage: 1.2kV Power dissipation: 244W Topology: H-bridge Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH011T120M3F2PTHG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 28.1mΩ Drain current: 91A Pulsed drain current: 273A Drain-source voltage: 1.2kV Power dissipation: 272W Topology: 3-level inverter TNPC Kind of package: in-tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NXH400N100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42 Type of semiconductor module: IGBT Semiconductor structure: SiC diode/transistor Max. off-state voltage: 1kV Collector current: 400A Application: for UPS; Inverter Electrical mounting: Press-Fit Gate-emitter voltage: ±20V Technology: SiC Mechanical mounting: screw Case: PIM42 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 36 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 4N35SVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: SMD6 Turn-on time: 2µs Turn-off time: 2µs Max. off-state voltage: 6V Number of pins: 6 Manufacturer series: 4N35 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33269DTRK-5.0G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 1.35...10V Manufacturer series: MC33269 Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V |
auf Bestellung 3849 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33269DT-3.3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 1.35...10V Manufacturer series: MC33269 Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V |
auf Bestellung 515 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33269D-3.3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: tube Number of channels: 1 Input voltage: 1.35...10V Manufacturer series: MC33269 Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33269DR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...18.65V Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Input voltage: 1.35...10V Manufacturer series: MC33269 Operating temperature: -40...125°C Tolerance: ±1% Voltage drop: 1.1V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MC33269ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC33269DR2-3.3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC33269T-3.3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MC33269DR2-5.0G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.8A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NRVBB40L45CTT4G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT2907A |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
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| NSS40501UW3T2G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: WDFN3
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: WDFN3
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Frequency: 150MHz
Application: automotive industry
Polarisation: bipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NSS40500UW3T2G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: WDFN3
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Application: automotive industry
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Type of transistor: PNP
Kind of package: reel; tape
Case: WDFN3
Power dissipation: 1.5W
Collector current: 5A
Collector-emitter voltage: 40V
Application: automotive industry
Polarisation: bipolar
Produkt ist nicht verfügbar
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| 6N137M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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| NC7SZ74L8X |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 272+ | 0.26 EUR |
| 304+ | 0.24 EUR |
| 353+ | 0.2 EUR |
| 424+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| MBRS3100T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Kind of package: reel; tape
auf Bestellung 3647 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 174+ | 0.41 EUR |
| 194+ | 0.37 EUR |
| 236+ | 0.3 EUR |
| 249+ | 0.29 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2500+ | 0.22 EUR |
| CNY17F4TVM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 238+ | 0.3 EUR |
| CNY171M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 104+ | 0.69 EUR |
| FDS4470 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
On-state resistance: 14mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 12.5A
Drain-source voltage: 40V
Case: SO8
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
On-state resistance: 14mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Drain current: 12.5A
Drain-source voltage: 40V
Case: SO8
Kind of package: reel; tape
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 2 EUR |
| 41+ | 1.77 EUR |
| 46+ | 1.57 EUR |
| 100+ | 1.44 EUR |
| MBRF2545CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 591 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.3 EUR |
| 38+ | 1.93 EUR |
| 43+ | 1.67 EUR |
| 54+ | 1.33 EUR |
| 63+ | 1.14 EUR |
| SS39 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
auf Bestellung 2735 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 94+ | 0.76 EUR |
| 101+ | 0.71 EUR |
| 112+ | 0.64 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.51 EUR |
| SBAT54CTT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| FDS2582 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |
| FDMS86202 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| FDMS86202ET120 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11G2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 81+ | 0.89 EUR |
| 105+ | 0.68 EUR |
| 126+ | 0.57 EUR |
| 148+ | 0.48 EUR |
| MJF45H11G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Frequency: 40MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Frequency: 40MHz
Polarisation: bipolar
Case: TO220FP
Type of transistor: PNP
Kind of package: tube
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 2.22 EUR |
| 41+ | 1.77 EUR |
| 53+ | 1.36 EUR |
| H11G1SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: Gull wing 6
Kind of output: transistor
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Mounting: SMD
Number of channels: 1
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: Gull wing 6
Kind of output: transistor
Type of optocoupler: optocoupler
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11G2SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJB45H11G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH020U90MNF2PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NXH003P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 350A
Pulsed drain current: 700A
Drain-source voltage: 1.2kV
Power dissipation: 979W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| NXH004P120M3F2PTNG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| NXH003P120M3F2PTNG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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| NXH006P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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| NXH004P120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH006P120MNF2PTG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
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| NXH007F120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH008T120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH011F120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 105A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 21.9mΩ
Drain current: 105A
Pulsed drain current: 316A
Drain-source voltage: 1.2kV
Power dissipation: 244W
Topology: H-bridge
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH011T120M3F2PTHG |
|
Hersteller: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 91A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 28.1mΩ
Drain current: 91A
Pulsed drain current: 273A
Drain-source voltage: 1.2kV
Power dissipation: 272W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| NXH400N100H4Q2F2PG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 400A; PIM42
Type of semiconductor module: IGBT
Semiconductor structure: SiC diode/transistor
Max. off-state voltage: 1kV
Collector current: 400A
Application: for UPS; Inverter
Electrical mounting: Press-Fit
Gate-emitter voltage: ±20V
Technology: SiC
Mechanical mounting: screw
Case: PIM42
Produkt ist nicht verfügbar
Mindestbestellmenge: 36 Stücke
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| 4N35SVM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: SMD6
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Number of pins: 6
Manufacturer series: 4N35
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: SMD6
Turn-on time: 2µs
Turn-off time: 2µs
Max. off-state voltage: 6V
Number of pins: 6
Manufacturer series: 4N35
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.22 EUR |
| MC33269DTRK-5.0G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
auf Bestellung 3849 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 177+ | 0.41 EUR |
| 189+ | 0.38 EUR |
| 211+ | 0.34 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.28 EUR |
| 2500+ | 0.25 EUR |
| MC33269DT-3.3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
auf Bestellung 515 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 125+ | 0.57 EUR |
| 149+ | 0.48 EUR |
| 190+ | 0.38 EUR |
| MC33269D-3.3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| MC33269DR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.65V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷18.65V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...18.65V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Input voltage: 1.35...10V
Manufacturer series: MC33269
Operating temperature: -40...125°C
Tolerance: ±1%
Voltage drop: 1.1V
Produkt ist nicht verfügbar
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| MC33269ST-3.3T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33269DR2-3.3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33269T-3.3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220AB; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Produkt ist nicht verfügbar
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| MC33269DR2-5.0G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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