Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (147069) > Seite 2403 nach 2452

Wählen Sie Seite:   [  << Vorherige Seite ]  1 245 490 735 980 1225 1470 1715 1960 2205 2398 2399 2400 2401 2402 2403 2404 2405 2406 2407 2408 2450 2452  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SS36 SS36 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 2183 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
142+0.51 EUR
182+0.39 EUR
193+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
TL431AIDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN3100TSX FAN3100TSX ONSEMI fan3100t-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
Technology: MillerDrive™
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.52 EUR
65+1.11 EUR
91+0.79 EUR
96+0.74 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T120SQDNL4 ONSEMI fgh40t120sqdnl4-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120RWD ONSEMI fghl40t120rwd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120SWD ONSEMI fghl40t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH50T65UPD ONSEMI fgh50t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 230nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 150A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65LQDT ONSEMI fghl50t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 509nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65MQD ONSEMI FGHL50T65MQD-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 94nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65MQDT ONSEMI fghl50t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65SQDT ONSEMI fghl50t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99.7nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQA36P15 FQA36P15 ONSEMI FQA36P15.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRPG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ILPRAG ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ14DTT1G NL27WZ14DTT1G ONSEMI NL27WZ14DTT1G.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Kind of input: with Schmitt trigger
Kind of gate: NOT
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65UPD ONSEMI fgh75t65upd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65UPD-F085 ONSEMI FGH75T65UP_F085-D.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937RLG 1N4937RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
455+0.16 EUR
538+0.13 EUR
794+0.09 EUR
926+0.08 EUR
1122+0.06 EUR
1200+0.06 EUR
1270+0.06 EUR
1320+0.05 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
MPSA42 MPSA42 ONSEMI MMBTA42.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
auf Bestellung 5737 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
271+0.26 EUR
463+0.15 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
FGY140T120SWD ONSEMI fgy140t120swd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH4L40T120LQD ONSEMI fgh4l40t120lqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431IDR2G ONSEMI tl431-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4733A 1N4733A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
auf Bestellung 2568 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
400+0.18 EUR
498+0.14 EUR
819+0.09 EUR
1455+0.05 EUR
1539+0.05 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N4749A 1N4749A ONSEMI 1N47xxA.PDF Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 2221 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.30 EUR
338+0.21 EUR
537+0.13 EUR
663+0.11 EUR
1444+0.05 EUR
1527+0.05 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
1N4933G ONSEMI 1N4933_7.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDG6335N FDG6335N ONSEMI FDG6335N.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.7A
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
111+0.65 EUR
143+0.50 EUR
232+0.31 EUR
246+0.29 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
BAS16WT1G BAS16WT1G ONSEMI BAS16WT1G.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 7620 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
820+0.09 EUR
1498+0.05 EUR
2165+0.03 EUR
3547+0.02 EUR
3732+0.02 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BAS16XV2T1G BAS16XV2T1G ONSEMI BAS16XV2.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3742 Stücke:
Lieferzeit 14-21 Tag (e)
605+0.12 EUR
962+0.07 EUR
1250+0.06 EUR
1413+0.05 EUR
2476+0.03 EUR
2618+0.03 EUR
3000+0.03 EUR
Mindestbestellmenge: 605
Im Einkaufswagen  Stück im Wert von  UAH
BAS16XV2T5G BAS16XV2T5G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3816 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
676+0.11 EUR
1226+0.06 EUR
1731+0.04 EUR
1902+0.04 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
NCP5181DR2G NCP5181DR2G ONSEMI ncp5181-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.19 EUR
36+2.03 EUR
43+1.70 EUR
45+1.62 EUR
500+1.56 EUR
1000+1.54 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
FGHL75T65LQDT ONSEMI fghl75t65lqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL75T65MQD ONSEMI fghl75t65mqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL75T65MQDT ONSEMI fghl75t65mqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5335DW1T1G SMUN5335DW1T1G ONSEMI dtc123jp-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Application: automotive industry
Base resistor: 2.2kΩ
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
360+0.20 EUR
405+0.18 EUR
455+0.16 EUR
485+0.15 EUR
3000+0.14 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC1G04DTT1G
+1
 		MC74VHC1G04DTT1G ONSEMI mc74vhc1g04-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of gate: NOT
Number of inputs: 1
Family: VHC
auf Bestellung 1633 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
610+0.12 EUR
695+0.10 EUR
755+0.10 EUR
810+0.09 EUR
837+0.09 EUR
855+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FDG6321C FDG6321C ONSEMI FDG6321C.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25/-25V
Drain current: 0.5/-0.41A
On-state resistance: 720/1800mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.3/1.5nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8/±8V
auf Bestellung 2588 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
129+0.56 EUR
261+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LT1G BAT54LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE890AF7BE50B39B3D3&compId=BAT54L.pdf?ci_sign=064d94560ec27286bce7f7c2c3cba8c176530655 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 9218 Stücke:
Lieferzeit 14-21 Tag (e)
799+0.09 EUR
1064+0.07 EUR
1446+0.05 EUR
1684+0.04 EUR
3145+0.02 EUR
3206+0.02 EUR
3402+0.02 EUR
Mindestbestellmenge: 799
Im Einkaufswagen  Stück im Wert von  UAH
MC1413BDG MC1413BDG ONSEMI MC1413BDG.PDF Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ07DTT1G NL27WZ07DTT1G ONSEMI NL27WZ07DTT1G.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Case: TSOP6
Operating temperature: -55...125°C
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)
202+0.36 EUR
Mindestbestellmenge: 202
Im Einkaufswagen  Stück im Wert von  UAH
FXL5T244BQX FXL5T244BQX ONSEMI FXL5T244BQX.pdf Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Number of inputs: 5
Number of outputs: 5
Supply voltage: 1.1...3.6V DC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
58+1.24 EUR
63+1.14 EUR
69+1.04 EUR
71+1.00 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
ES3J ES3J ONSEMI ES3J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
auf Bestellung 3352 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
151+0.47 EUR
252+0.28 EUR
266+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
MBR20L45CTG MBR20L45CTG ONSEMI MBR20L45CTG.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86520 ONSEMI fdms86520-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51460SN33T1G NCP51460SN33T1G ONSEMI ncp51460-d.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Operating voltage: 4.2...28V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
118+0.61 EUR
143+0.50 EUR
146+0.49 EUR
151+0.47 EUR
157+0.46 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
MC14073BDG MC14073BDG ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14073BDR2G MC14073BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSQ0365RLX ONSEMI fsq0365-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
On-state resistance: 4.5Ω
Power: 19W
Input voltage: 85...265V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT595ADG MC74HCT595ADG ONSEMI MC74HCT595A-D.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
96+0.74 EUR
Mindestbestellmenge: 96
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT595ADTG MC74HCT595ADTG ONSEMI MC74HCT595A-D.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
75+0.96 EUR
114+0.63 EUR
121+0.59 EUR
192+0.57 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
MC33172DR2G MC33172DR2G ONSEMI MC33172DG-DTE.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...22V DC; 3...44V DC
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
103+0.70 EUR
122+0.59 EUR
164+0.44 EUR
174+0.41 EUR
250+0.40 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
MMUN2214LT1G MMUN2214LT1G ONSEMI MMUN2214.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 18682 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
770+0.09 EUR
1238+0.06 EUR
1678+0.04 EUR
3312+0.02 EUR
3497+0.02 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
74FST3257MNTWG ONSEMI 74fst3257-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 3µA
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Case: QFN16
Supply voltage: 4...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8025S ONSEMI FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10M DF10M ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: MDIP4L
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX79C2V4 BZX79C2V4 ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
auf Bestellung 2309 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.19 EUR
633+0.11 EUR
1568+0.05 EUR
2017+0.04 EUR
2075+0.03 EUR
2165+0.03 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
SS36 SS32_SS39.pdf
SS36
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 2183 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
142+0.51 EUR
182+0.39 EUR
193+0.37 EUR
500+0.36 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
TL431AIDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BCLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431BILPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FAN3100TSX fan3100t-d.pdf
FAN3100TSX
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SOT23-5
Output current: -2.5...1.8A
Number of channels: 1
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 14ns
Kind of package: reel; tape
Kind of output: non-inverting
Technology: MillerDrive™
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.52 EUR
65+1.11 EUR
91+0.79 EUR
96+0.74 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T120SQDNL4 fgh40t120sqdnl4-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 227W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 227W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 221nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120RWD fghl40t120rwd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL40T120SWD fghl40t120swd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH50T65UPD fgh50t65upd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 230nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 150A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65LQDT fghl50t65lqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 170W
Kind of package: tube
Gate charge: 509nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65MQD FGHL50T65MQD-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 94nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65MQDT fghl50t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL50T65SQDT fghl50t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Power dissipation: 134W
Kind of package: tube
Gate charge: 99.7nC
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Type of transistor: IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQA36P15 FQA36P15.pdf
FQA36P15
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -25.5A
Power dissipation: 294W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431CLPRPG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431ILPRAG tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ14DTT1G NL27WZ14DTT1G.pdf
NL27WZ14DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; SMD; TSOP6; 1.65÷5.5VDC; -55÷125°C
Case: TSOP6
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: digital
Number of channels: dual; 2
Kind of input: with Schmitt trigger
Kind of gate: NOT
Operating temperature: -55...125°C
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
auf Bestellung 129 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65UPD fgh75t65upd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65UPD-F085 FGH75T65UP_F085-D.PDF
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4937RLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92
1N4937RLG
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; reel,tape; Ifsm: 30A; Ufmax: 1.2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59-10; DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
auf Bestellung 4919 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
455+0.16 EUR
538+0.13 EUR
794+0.09 EUR
926+0.08 EUR
1122+0.06 EUR
1200+0.06 EUR
1270+0.06 EUR
1320+0.05 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
MPSA42 MMBTA42.pdf
MPSA42
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
auf Bestellung 5737 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
271+0.26 EUR
463+0.15 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
FGY140T120SWD fgy140t120swd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 140A; 576W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 140A
Power dissipation: 576W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 560A
Mounting: THT
Gate charge: 415.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH4L40T120LQD fgh4l40t120lqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 153W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 153W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TL431IDR2G tl431-d.pdf
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4733A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4733A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
auf Bestellung 2568 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
400+0.18 EUR
498+0.14 EUR
819+0.09 EUR
1455+0.05 EUR
1539+0.05 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
1N4749A 1N47xxA.PDF
1N4749A
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 24V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 24V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
auf Bestellung 2221 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.30 EUR
338+0.21 EUR
537+0.13 EUR
663+0.11 EUR
1444+0.05 EUR
1527+0.05 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
1N4933G 1N4933_7.PDF
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Case: CASE59-10; DO41
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 200ns
Max. forward impulse current: 30A
Kind of package: bulk
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDG6335N FDG6335N.pdf
FDG6335N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 442mΩ
Gate charge: 1.4nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Drain-source voltage: 20V
Drain current: 0.7A
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
111+0.65 EUR
143+0.50 EUR
232+0.31 EUR
246+0.29 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
BAS16WT1G BAS16WT1G.pdf
BAS16WT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SC70; Ifsm: 0.5A; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SC70
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 7620 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
820+0.09 EUR
1498+0.05 EUR
2165+0.03 EUR
3547+0.02 EUR
3732+0.02 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
BAS16XV2T1G BAS16XV2.PDF
BAS16XV2T1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3742 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
605+0.12 EUR
962+0.07 EUR
1250+0.06 EUR
1413+0.05 EUR
2476+0.03 EUR
2618+0.03 EUR
3000+0.03 EUR
Mindestbestellmenge: 605
Im Einkaufswagen  Stück im Wert von  UAH
BAS16XV2T5G bas16xv2t1-d.pdf
BAS16XV2T5G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 0.715V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 0.715V
Max. forward impulse current: 0.5A
Power dissipation: 0.2W
Kind of package: reel; tape
auf Bestellung 3816 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
676+0.11 EUR
1226+0.06 EUR
1731+0.04 EUR
1902+0.04 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
NCP5181DR2G ncp5181-d.pdf
NCP5181DR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
auf Bestellung 1788 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
36+2.03 EUR
43+1.70 EUR
45+1.62 EUR
500+1.56 EUR
1000+1.54 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
FGHL75T65LQDT fghl75t65lqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL75T65MQD fghl75t65mqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGHL75T65MQDT fghl75t65mqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5335DW1T1G dtc123jp-d.pdf
SMUN5335DW1T1G
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Application: automotive industry
Base resistor: 2.2kΩ
auf Bestellung 4585 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.23 EUR
360+0.20 EUR
405+0.18 EUR
455+0.16 EUR
485+0.15 EUR
3000+0.14 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
MC74VHC1G04DTT1G mc74vhc1g04-d.pdf
MC74VHC1G04DTT1G
+1
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of gate: NOT
Number of inputs: 1
Family: VHC
auf Bestellung 1633 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
610+0.12 EUR
695+0.10 EUR
755+0.10 EUR
810+0.09 EUR
837+0.09 EUR
855+0.08 EUR
1000+0.08 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
FDG6321C FDG6321C.pdf
FDG6321C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 25/-25V
Drain current: 0.5/-0.41A
On-state resistance: 720/1800mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 0.3W
Polarisation: unipolar
Gate charge: 2.3/1.5nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8/±8V
auf Bestellung 2588 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
129+0.56 EUR
261+0.27 EUR
275+0.26 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
BAT54LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE890AF7BE50B39B3D3&compId=BAT54L.pdf?ci_sign=064d94560ec27286bce7f7c2c3cba8c176530655
BAT54LT1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 7.6pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 9218 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
799+0.09 EUR
1064+0.07 EUR
1446+0.05 EUR
1684+0.04 EUR
3145+0.02 EUR
3206+0.02 EUR
3402+0.02 EUR
Mindestbestellmenge: 799
Im Einkaufswagen  Stück im Wert von  UAH
MC1413BDG MC1413BDG.PDF
MC1413BDG
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; darlington,transistor array; SO16; 0.5A; 50V; Ch: 7
Type of integrated circuit: driver
Kind of integrated circuit: darlington; transistor array
Case: SO16
Output current: 0.5A
Output voltage: 50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 30V
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL27WZ07DTT1G NL27WZ07DTT1G.pdf
NL27WZ07DTT1G
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Case: TSOP6
Operating temperature: -55...125°C
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
auf Bestellung 202 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
202+0.36 EUR
Mindestbestellmenge: 202
Im Einkaufswagen  Stück im Wert von  UAH
FXL5T244BQX FXL5T244BQX.pdf
FXL5T244BQX
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 5; 1.1÷3.6VDC; SMD; DQFN14; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 5
Case: DQFN14
Number of inputs: 5
Number of outputs: 5
Supply voltage: 1.1...3.6V DC
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
63+1.14 EUR
69+1.04 EUR
71+1.00 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
ES3J ES3J.pdf
ES3J
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
auf Bestellung 3352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
151+0.47 EUR
252+0.28 EUR
266+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
MBR20L45CTG MBR20L45CTG.pdf
MBR20L45CTG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220-3; Ufmax: 0.47V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.47V
Max. load current: 20A
Max. forward impulse current: 180A
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86520 fdms86520-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51460SN33T1G ncp51460-d.pdf
NCP51460SN33T1G
Hersteller: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 3.3V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 3.3V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: 0...100°C
Operating voltage: 4.2...28V
Kind of package: reel; tape
Maximum output current: 20mA
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
118+0.61 EUR
143+0.50 EUR
146+0.49 EUR
151+0.47 EUR
157+0.46 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
MC14073BDG MC14001B-D.pdf
MC14073BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC14073BDR2G MC14001B-D.pdf
MC14073BDR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSQ0365RLX fsq0365-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
On-state resistance: 4.5Ω
Power: 19W
Input voltage: 85...265V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT595ADG MC74HCT595A-D.pdf
MC74HCT595ADG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; SOIC16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
96+0.74 EUR
Mindestbestellmenge: 96
Im Einkaufswagen  Stück im Wert von  UAH
MC74HCT595ADTG MC74HCT595A-D.pdf
MC74HCT595ADTG
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS,TTL; SMD; TSSOP16; HCT; 4.5÷5.5VDC; HCT; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel out; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Family: HCT
Operating temperature: -55...125°C
Kind of package: tube
Kind of output: 3-state
Number of inputs: 5
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
75+0.96 EUR
114+0.63 EUR
121+0.59 EUR
192+0.57 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
MC33172DR2G MC33172DG-DTE.PDF
MC33172DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.8MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2.1V/μs
Operating temperature: -40...85°C
Input offset voltage: 2mV
Kind of package: reel; tape
Voltage supply range: ± 1.5...22V DC; 3...44V DC
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
103+0.70 EUR
122+0.59 EUR
164+0.44 EUR
174+0.41 EUR
250+0.40 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
MMUN2214LT1G MMUN2214.PDF
MMUN2214LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 18682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
770+0.09 EUR
1238+0.06 EUR
1678+0.04 EUR
3312+0.02 EUR
3497+0.02 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
74FST3257MNTWG 74fst3257-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 4; SMD; QFN16; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 3µA
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Case: QFN16
Supply voltage: 4...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS8025S FAIR-S-A0002363775-1.pdf?t.download=true&u=5oefqw fdms8025s-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Case: Power56
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10M DF005-10m.pdf
DF10M
Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1.5A; Ifsm: 50A
Case: MDIP4L
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Kind of package: tube
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZX79C2V4 BZX79C.PDF
BZX79C2V4
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; bulk; CASE017AG; single diode; 100uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.1mA
auf Bestellung 2309 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
385+0.19 EUR
633+0.11 EUR
1568+0.05 EUR
2017+0.04 EUR
2075+0.03 EUR
2165+0.03 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 245 490 735 980 1225 1470 1715 1960 2205 2398 2399 2400 2401 2402 2403 2404 2405 2406 2407 2408 2450 2452  [ Nächste Seite >> ]