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MM74HCT541WM MM74HCT541WM ONSEMI MM74HCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HCT
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
88+0.82 EUR
103+0.70 EUR
108+0.66 EUR
114+0.64 EUR
Mindestbestellmenge: 67
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MM74HCT541WMX ONSEMI MM74HCT541-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Produkt ist nicht verfügbar
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BZX79C9V1 BZX79C9V1 ONSEMI BZX79C.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.5µA
auf Bestellung 2101 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
556+0.13 EUR
676+0.11 EUR
1220+0.06 EUR
1516+0.05 EUR
1916+0.04 EUR
2000+0.04 EUR
2025+0.04 EUR
Mindestbestellmenge: 417
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ES1B ES1B ONSEMI ES1x.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SMA
Capacitance: 7pF
Max. off-state voltage: 100V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
261+0.27 EUR
382+0.19 EUR
447+0.16 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 179
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MJE15035G MJE15035G ONSEMI MJE15035G.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.10 EUR
38+1.92 EUR
43+1.67 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 35
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MC78LC50NTRG MC78LC50NTRG ONSEMI MC78LCxx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Tolerance: ±2.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 5V
Output current: 0.1A
Voltage drop: 0.038V
Number of channels: 1
Input voltage: 6...12V
Manufacturer series: MC78LC00
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
173+0.41 EUR
211+0.34 EUR
285+0.25 EUR
770+0.09 EUR
820+0.09 EUR
Mindestbestellmenge: 112
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MMUN2216LT1G MMUN2216LT1G ONSEMI MMUN2216.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
auf Bestellung 5938 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
685+0.10 EUR
933+0.08 EUR
1069+0.07 EUR
1437+0.05 EUR
2689+0.03 EUR
2858+0.03 EUR
Mindestbestellmenge: 455
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SMMUN2214LT1G SMMUN2214LT1G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 6243 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
575+0.12 EUR
923+0.08 EUR
1299+0.06 EUR
1374+0.05 EUR
1429+0.05 EUR
Mindestbestellmenge: 358
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NSVMMUN2212LT1G NSVMMUN2212LT1G ONSEMI dtc124e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.20 EUR
575+0.12 EUR
923+0.08 EUR
1247+0.06 EUR
1320+0.05 EUR
1370+0.05 EUR
Mindestbestellmenge: 358
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MMUN2212LT1G MMUN2212LT1G ONSEMI DTC124E_MUNx212.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
1087+0.07 EUR
1471+0.05 EUR
2093+0.03 EUR
2900+0.02 EUR
Mindestbestellmenge: 625
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MMUN2217LT1G MMUN2217LT1G ONSEMI dtc143x-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
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MMUN2211LT3G MMUN2211LT3G ONSEMI MUN2211.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
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MMUN2230LT1G MMUN2230LT1G ONSEMI dtc113e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Produkt ist nicht verfügbar
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MMUN2236LT1G MMUN2236LT1G ONSEMI dtc115e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Produkt ist nicht verfügbar
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MMUN2238LT1G MMUN2238LT1G ONSEMI dtc123t-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
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MMUN2240LT1G MMUN2240LT1G ONSEMI dtc144t-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Produkt ist nicht verfügbar
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MMUN2241LT1G MMUN2241LT1G ONSEMI dtc115t-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
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SMMUN2238LT1G SMMUN2238LT1G ONSEMI dtc123t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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SMMUN2234LT1G SMMUN2234LT1G ONSEMI dtc124x-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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SMMUN2211LT3G SMMUN2211LT3G ONSEMI dtc114e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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SMMUN2216LT1G SMMUN2216LT1G ONSEMI dtc143t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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LM358M LM358M ONSEMI LM358A.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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NCP51810AMNTWG ONSEMI ncp51810-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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SMMUN2113LT1G SMMUN2113LT1G ONSEMI dta144e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
auf Bestellung 2916 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
910+0.08 EUR
1257+0.06 EUR
1480+0.05 EUR
1707+0.04 EUR
2428+0.03 EUR
2565+0.03 EUR
Mindestbestellmenge: 556
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2N7002LT3G 2N7002LT3G ONSEMI 2N7002L.PDF description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FUSB251UCX ONSEMI fusb251-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Quiescent current: 15µA
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB302BUCX ONSEMI fusb302b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB307BMPX ONSEMI fusb307b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB307BVMPX ONSEMI fusb307b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB308BVMPX ONSEMI fusb308b-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB380CUCX ONSEMI fusb380c-d.pdf Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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80SQ045NG 80SQ045NG ONSEMI 80SQ045N.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Case: DO201AD
Mounting: THT
Max. off-state voltage: 45V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: Schottky rectifying
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
89+0.81 EUR
106+0.67 EUR
113+0.64 EUR
Mindestbestellmenge: 61
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QSD2030F QSD2030F ONSEMI QSD2030F.pdf Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
auf Bestellung 1988 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
115+0.62 EUR
149+0.48 EUR
186+0.39 EUR
214+0.33 EUR
235+0.30 EUR
Mindestbestellmenge: 71
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NJW0302G NJW0302G ONSEMI NJW0281_NJW0302.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.49 EUR
28+2.56 EUR
30+2.42 EUR
120+2.33 EUR
Mindestbestellmenge: 21
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FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
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MURS360T3G MURS360T3G ONSEMI MURS360T3G.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 1.28V
Reverse recovery time: 75ns
Max. forward impulse current: 100A
auf Bestellung 1272 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
133+0.54 EUR
203+0.35 EUR
214+0.33 EUR
1000+0.32 EUR
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PZTA06 PZTA06 ONSEMI pzta06-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Mounting: SMD
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
auf Bestellung 3344 Stücke:
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138+0.52 EUR
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174+0.41 EUR
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QRD1114 QRD1114 ONSEMI QRD1114.PDF description Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
auf Bestellung 313 Stücke:
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30+2.46 EUR
38+1.89 EUR
53+1.37 EUR
56+1.29 EUR
100+1.27 EUR
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MC74HC1G00DTT1G MC74HC1G00DTT1G ONSEMI MC74HC1G00-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1970 Stücke:
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179+0.40 EUR
293+0.24 EUR
439+0.16 EUR
575+0.12 EUR
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ES2A ONSEMI es2d-d.pdf ES2_1.pdf es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Produkt ist nicht verfügbar
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MMBD4148 ONSEMI MMBD4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.35W
Capacitance: 4pF
Produkt ist nicht verfügbar
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2N7002 2N7002 ONSEMI 2N7000_2N7002_NDS7002A.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRD835LT4G MBRD835LT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEAB66D1608259&compId=MBRD835LG.PDF?ci_sign=11eb9d28376609194c99d77a22e787a17143e17b Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. load current: 16A
Kind of package: reel; tape
auf Bestellung 1120 Stücke:
Lieferzeit 14-21 Tag (e)
62+1.16 EUR
89+0.80 EUR
126+0.57 EUR
133+0.54 EUR
500+0.53 EUR
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MBRD1035CTLT4G MBRD1035CTLT4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE947F9F35A259&compId=MBRD1035CTLG.PDF?ci_sign=eb465d991e1ff2a722dcdfa52d6ef0a33dbcd073 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Max. load current: 10A
Kind of package: reel; tape
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.20 EUR
84+0.86 EUR
132+0.54 EUR
139+0.51 EUR
1000+0.49 EUR
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MBRD340T4G MBRD340T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688CCFB7D682745&compId=MBRD3x0.PDF?ci_sign=56c96f8fe15540d003cce8e25802ce268633e04a Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 6A
Kind of package: reel; tape
auf Bestellung 1405 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.00 EUR
91+0.79 EUR
143+0.50 EUR
151+0.48 EUR
500+0.46 EUR
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ES2D ES2D ONSEMI es2d-d.pdf ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf es2a.pdf FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2x.pdf ES2_1.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 151 Stücke:
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136+0.53 EUR
151+0.47 EUR
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2N5460 2N5460 ONSEMI MMBF5461.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92
Type of transistor: P-JFET
Polarisation: unipolar
Case: TO92
Mounting: THT
Drain-source voltage: -40V
Average continuous current: -5mA
Power: 0.35W
Produkt ist nicht verfügbar
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4N32M 4N32M ONSEMI 4N32M.pdf 4N32M.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA
Mounting: THT
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 5µs
Turn-off time: 100µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
auf Bestellung 197 Stücke:
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75+0.96 EUR
112+0.64 EUR
197+0.36 EUR
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4N32SM 4N32SM ONSEMI 4N32SM.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6
Mounting: SMD
Type of optocoupler: optocoupler
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 100µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
107+0.67 EUR
123+0.58 EUR
145+0.50 EUR
152+0.47 EUR
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BC848BWT1G BC848BWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MC74ACT153DG MC74ACT153DG ONSEMI MC74AC153-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Case: SOIC16
Number of inputs: 7
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
Family: ACT
Mounting: SMD
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
82+0.88 EUR
99+0.73 EUR
149+0.48 EUR
158+0.45 EUR
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NVR5198NLT1G NVR5198NLT1G ONSEMI NVR5198NL.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Pulsed drain current: 27A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1693 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
210+0.34 EUR
244+0.29 EUR
365+0.20 EUR
385+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 125
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MMSZ5227BT1G MMSZ5227BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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FDMS8680 ONSEMI fdms8680-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDP047AN08A0 FDP047AN08A0 ONSEMI fdh047an08a0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74LCX244DWR2G ONSEMI MC74LCX244-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SO20WB; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Produkt ist nicht verfügbar
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MC74LCX244MNTWG ONSEMI MC74LCX244-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; QFN20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Produkt ist nicht verfügbar
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BC858CDXV6T1G ONSEMI bc858cdxv6t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FDMS86103L ONSEMI fdms86103l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86550 ONSEMI fdms86550-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MM74HCT541WM MM74HCT541.pdf
MM74HCT541WM
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Quiescent current: 80µA
Manufacturer series: HCT
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
88+0.82 EUR
103+0.70 EUR
108+0.66 EUR
114+0.64 EUR
Mindestbestellmenge: 67
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MM74HCT541WMX MM74HCT541-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS,TTL; SMD; SOIC20; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC20
Supply voltage: 4.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Manufacturer series: HCT
Produkt ist nicht verfügbar
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BZX79C9V1 BZX79C.PDF
BZX79C9V1
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: bulk
Case: CASE017AG
Semiconductor structure: single diode
Manufacturer series: BZX79C
Leakage current: 0.5µA
auf Bestellung 2101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
556+0.13 EUR
676+0.11 EUR
1220+0.06 EUR
1516+0.05 EUR
1916+0.04 EUR
2000+0.04 EUR
2025+0.04 EUR
Mindestbestellmenge: 417
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ES1B ES1x.PDF
ES1B
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Mounting: SMD
Case: SMA
Capacitance: 7pF
Max. off-state voltage: 100V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
auf Bestellung 3495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
261+0.27 EUR
382+0.19 EUR
447+0.16 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 179
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MJE15035G MJE15035G.pdf
MJE15035G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 4A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 4A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.10 EUR
38+1.92 EUR
43+1.67 EUR
50+1.46 EUR
53+1.37 EUR
Mindestbestellmenge: 35
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MC78LC50NTRG MC78LCxx.pdf
MC78LC50NTRG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TSOP5; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Tolerance: ±2.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Kind of package: reel; tape
Output voltage: 5V
Output current: 0.1A
Voltage drop: 0.038V
Number of channels: 1
Input voltage: 6...12V
Manufacturer series: MC78LC00
Kind of voltage regulator: fixed; LDO; linear
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
173+0.41 EUR
211+0.34 EUR
285+0.25 EUR
770+0.09 EUR
820+0.09 EUR
Mindestbestellmenge: 112
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MMUN2216LT1G MMUN2216.PDF
MMUN2216LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
auf Bestellung 5938 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
685+0.10 EUR
933+0.08 EUR
1069+0.07 EUR
1437+0.05 EUR
2689+0.03 EUR
2858+0.03 EUR
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SMMUN2214LT1G dtc114y-d.pdf
SMMUN2214LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 80...140
auf Bestellung 6243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
575+0.12 EUR
923+0.08 EUR
1299+0.06 EUR
1374+0.05 EUR
1429+0.05 EUR
Mindestbestellmenge: 358
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NSVMMUN2212LT1G dtc124e-d.pdf
NSVMMUN2212LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 60...100
auf Bestellung 2435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.20 EUR
575+0.12 EUR
923+0.08 EUR
1247+0.06 EUR
1320+0.05 EUR
1370+0.05 EUR
Mindestbestellmenge: 358
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MMUN2212LT1G DTC124E_MUNx212.PDF
MMUN2212LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
1087+0.07 EUR
1471+0.05 EUR
2093+0.03 EUR
2900+0.02 EUR
Mindestbestellmenge: 625
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MMUN2217LT1G dtc143x-d.pdf
MMUN2217LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
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MMUN2211LT3G MUN2211.PDF
MMUN2211LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Produkt ist nicht verfügbar
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MMUN2230LT1G dtc113e-d.pdf
MMUN2230LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Current gain: 3...5
Produkt ist nicht verfügbar
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MMUN2236LT1G dtc115e-d.pdf
MMUN2236LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Current gain: 80...150
Produkt ist nicht verfügbar
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MMUN2238LT1G dtc123t-d.pdf
MMUN2238LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
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MMUN2240LT1G dtc144t-d.pdf
MMUN2240LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Produkt ist nicht verfügbar
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MMUN2241LT1G dtc115t-d.pdf
MMUN2241LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Current gain: 160...350
Produkt ist nicht verfügbar
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SMMUN2238LT1G dtc123t-d.pdf
SMMUN2238LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMUN2234LT1G dtc124x-d.pdf
SMMUN2234LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMMUN2211LT3G dtc114e-d.pdf
SMMUN2211LT3G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Produkt ist nicht verfügbar
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SMMUN2216LT1G dtc143t-d.pdf
SMMUN2216LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM358M LM358A.pdf
LM358M
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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NCP51810AMNTWG ncp51810-d.pdf
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; GaN; QFN15; -2÷1A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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SMMUN2113LT1G dta144e-d.pdf
SMMUN2113LT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
auf Bestellung 2916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
910+0.08 EUR
1257+0.06 EUR
1480+0.05 EUR
1707+0.04 EUR
2428+0.03 EUR
2565+0.03 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
2N7002LT3G description 2N7002L.PDF
2N7002LT3G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FUSB251UCX fusb251-d.pdf
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP15
Quiescent current: 15µA
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP15
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FUSB302BUCX fusb302b-d.pdf
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.7÷5.5VDC; reel,tape; WLCSP9
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP9
Supply voltage: 2.7...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB307BMPX fusb307b-d.pdf
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB307BVMPX fusb307b-d.pdf
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FUSB308BVMPX fusb308b-d.pdf
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.8÷5.5VDC; reel,tape; QFN16
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...105°C
Case: QFN16
Supply voltage: 2.8...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
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FUSB380CUCX fusb380c-d.pdf
Hersteller: ONSEMI
Category: USB interfaces - integrated circuits
Description: IC: interface; USB C controller; 2.4÷5.5VDC; reel,tape; WLCSP12
Kind of package: reel; tape
Kind of integrated circuit: USB C controller
Mounting: SMD
Operating temperature: -40...85°C
Case: WLCSP12
Supply voltage: 2.4...5.5V DC
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
80SQ045NG 80SQ045N.PDF
80SQ045NG
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Case: DO201AD
Mounting: THT
Max. off-state voltage: 45V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Kind of package: bulk
Type of diode: Schottky rectifying
auf Bestellung 235 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
89+0.81 EUR
106+0.67 EUR
113+0.64 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
QSD2030F QSD2030F.pdf
QSD2030F
Hersteller: ONSEMI
Category: Photodiodes
Description: Photodiode; 5mm; THT; 880nm; 700÷1100nm; 20°; 1.3V; convex; black
Operating voltage: 1.3V
LED diameter: 5mm
Wavelength: 700...1100nm
LED lens: black
Viewing angle: 20°
Type of photoelement: photodiode
Wavelength of peak sensitivity: 880nm
Front: convex
Mounting: THT
auf Bestellung 1988 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
115+0.62 EUR
149+0.48 EUR
186+0.39 EUR
214+0.33 EUR
235+0.30 EUR
Mindestbestellmenge: 71
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NJW0302G NJW0281_NJW0302.pdf
NJW0302G
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
28+2.56 EUR
30+2.42 EUR
120+2.33 EUR
Mindestbestellmenge: 21
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FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Kind of package: reel; tape
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Produkt ist nicht verfügbar
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MURS360T3G MURS360T3G.PDF
MURS360T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 1.28V
Reverse recovery time: 75ns
Max. forward impulse current: 100A
auf Bestellung 1272 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
133+0.54 EUR
203+0.35 EUR
214+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
PZTA06 pzta06-d.pdf
PZTA06
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 1W; SOT223-4,TO261-4
Mounting: SMD
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 80V
Current gain: 100
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 1W
Polarisation: bipolar
auf Bestellung 3344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
138+0.52 EUR
165+0.43 EUR
174+0.41 EUR
Mindestbestellmenge: 125
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QRD1114 description QRD1114.PDF
QRD1114
Hersteller: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
auf Bestellung 313 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
38+1.89 EUR
53+1.37 EUR
56+1.29 EUR
100+1.27 EUR
Mindestbestellmenge: 30
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MC74HC1G00DTT1G MC74HC1G00-D.pdf
MC74HC1G00DTT1G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
auf Bestellung 1970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.40 EUR
293+0.24 EUR
439+0.16 EUR
575+0.12 EUR
Mindestbestellmenge: 179
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ES2A es2d-d.pdf ES2_1.pdf es2a.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.66W
Leakage current: 0.35mA
Capacitance: 18pF
Produkt ist nicht verfügbar
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MMBD4148 MMBD4148.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 2A
Power dissipation: 0.35W
Capacitance: 4pF
Produkt ist nicht verfügbar
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2N7002 2N7000_2N7002_NDS7002A.PDF
2N7002
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.115A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBRD835LT4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AEAB66D1608259&compId=MBRD835LG.PDF?ci_sign=11eb9d28376609194c99d77a22e787a17143e17b
MBRD835LT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Max. load current: 16A
Kind of package: reel; tape
auf Bestellung 1120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
62+1.16 EUR
89+0.80 EUR
126+0.57 EUR
133+0.54 EUR
500+0.53 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
MBRD1035CTLT4G pVersion=0046&contRep=ZT&docId=005056AB752F1ED781AE947F9F35A259&compId=MBRD1035CTLG.PDF?ci_sign=eb465d991e1ff2a722dcdfa52d6ef0a33dbcd073
MBRD1035CTLT4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.55V
Max. load current: 10A
Kind of package: reel; tape
auf Bestellung 1001 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.20 EUR
84+0.86 EUR
132+0.54 EUR
139+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 60
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MBRD340T4G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78688CCFB7D682745&compId=MBRD3x0.PDF?ci_sign=56c96f8fe15540d003cce8e25802ce268633e04a
MBRD340T4G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. load current: 6A
Kind of package: reel; tape
auf Bestellung 1405 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1.00 EUR
91+0.79 EUR
143+0.50 EUR
151+0.48 EUR
500+0.46 EUR
Mindestbestellmenge: 72
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ES2D es2d-d.pdf ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf es2a.pdf FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2x.pdf ES2_1.pdf
ES2D
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 20ns
Semiconductor structure: single diode
Capacitance: 18pF
Case: SMB
Max. forward voltage: 0.9V
Max. forward impulse current: 50A
Leakage current: 0.35mA
Features of semiconductor devices: fast switching
Power dissipation: 1.66W
Kind of package: reel; tape
auf Bestellung 151 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
151+0.47 EUR
Mindestbestellmenge: 136
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2N5460 MMBF5461.pdf
2N5460
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; -40V; 350mW; TO92
Type of transistor: P-JFET
Polarisation: unipolar
Case: TO92
Mounting: THT
Drain-source voltage: -40V
Average continuous current: -5mA
Power: 0.35W
Produkt ist nicht verfügbar
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4N32M 4N32M.pdf 4N32M.pdf
4N32M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 2.5kV; CTR@If: 50%@10mA
Mounting: THT
Type of optocoupler: optocoupler
Case: DIP6
Turn-on time: 5µs
Turn-off time: 100µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
75+0.96 EUR
112+0.64 EUR
197+0.36 EUR
Mindestbestellmenge: 75
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4N32SM 4N32SM.pdf
4N32SM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; Gull wing 6
Mounting: SMD
Type of optocoupler: optocoupler
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 100µs
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
107+0.67 EUR
123+0.58 EUR
145+0.50 EUR
152+0.47 EUR
Mindestbestellmenge: 69
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BC848BWT1G bc846awt1-d.pdf
BC848BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MC74ACT153DG MC74AC153-D.pdf
MC74ACT153DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 2; IN: 7; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Case: SOIC16
Number of inputs: 7
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Kind of package: tube
Manufacturer series: ACT
Technology: TTL
Kind of integrated circuit: multiplexer
Family: ACT
Mounting: SMD
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
82+0.88 EUR
99+0.73 EUR
149+0.48 EUR
158+0.45 EUR
Mindestbestellmenge: 49
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NVR5198NLT1G NVR5198NL.PDF
NVR5198NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.2A
Pulsed drain current: 27A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
210+0.34 EUR
244+0.29 EUR
365+0.20 EUR
385+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 125
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MMSZ5227BT1G MMSZ52xxT1G.PDF
MMSZ5227BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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FDMS8680 fdms8680-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDP047AN08A0 fdh047an08a0-d.pdf
FDP047AN08A0
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74LCX244DWR2G MC74LCX244-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; SO20WB; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20WB
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Produkt ist nicht verfügbar
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MC74LCX244MNTWG MC74LCX244-D.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal; Ch: 8; CMOS; SMD; QFN20; LCX; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: QFN20
Manufacturer series: LCX
Supply voltage: 1.5...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LCX
Integrated circuit features: tolerates a voltage of 5V on the inputs
Produkt ist nicht verfügbar
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BC858CDXV6T1G bc858cdxv6t1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.357W; SOT563
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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FDMS86103L fdms86103l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS86550 fdms86550-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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