2SA1417S-TD-E ONSEMI
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 983 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
118+ | 0.61 EUR |
127+ | 0.56 EUR |
166+ | 0.43 EUR |
175+ | 0.41 EUR |
1000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 2SA1417S-TD-E ONSEMI
Description: TRANS PNP 100V 2A PCP, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: PCP, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 500 mW.
Weitere Produktangebote 2SA1417S-TD-E nach Preis ab 0.41 EUR bis 1.4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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2SA1417S-TD-E | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
auf Bestellung 983 Stücke: Lieferzeit 14-21 Tag (e) |
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2SA1417S-TD-E | Hersteller : onsemi |
Description: TRANS PNP 100V 2A PCP Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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2SA1417S-TD-E | Hersteller : onsemi | Bipolar Transistors - BJT BIP PNP 2A 100V |
auf Bestellung 7231 Stücke: Lieferzeit 14-28 Tag (e) |
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2SA1417S-TD-E | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 2A 500mW 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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2SA1417S-TD-E | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 2A 500mW 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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2SA1417S-TD-E | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 2A 500mW 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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2SA1417S-TD-E | Hersteller : onsemi |
Description: TRANS PNP 100V 2A PCP Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: PCP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |