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2SA1419S-TD-E

2SA1419S-TD-E onsemi


en2007-d.pdf
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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Technische Details 2SA1419S-TD-E onsemi

Description: TRANS PNP 160V 1.5A PCP, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 1.5 A, Supplier Device Package: PCP, Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V, Current - Collector Cutoff (Max): 1µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Packaging: Tape & Reel (TR).

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2SA1419S-TD-E 2SA1419S-TD-E onsemi en2007-d.pdf Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2SA1419S-TD-E 2SA1419S-TD-E onsemi en2007-d.pdf Bipolar Transistors - BJT BIP PNP 1.5A 160V
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2SA1419S-TD-E 2SA1419S-TD-E ONSEMI en2007-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1419S-TD-E en2007-d.pdf
2SA1419S-TD-E
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1419S-TD-E en2007-d.pdf
2SA1419S-TD-E
Hersteller: onsemi
Bipolar Transistors - BJT BIP PNP 1.5A 160V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2SA1419S-TD-E en2007-d.pdf
2SA1419S-TD-E
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 160V; 1.5A; 0.5W; SOT89
Polarisation: bipolar
Kind of package: reel; tape
Case: SOT89
Type of transistor: PNP
Mounting: SMD
Collector current: 1.5A
Power dissipation: 0.5W
Collector-emitter voltage: 160V
Frequency: 120MHz
Current gain: 140...280
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH