Weitere Produktangebote NTJD4001NT1G nach Preis ab 0.13 EUR bis 0.7 EUR
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NTJD4001NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 0.25A SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4001NT1G | Hersteller : ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 0.18A; 0.272W Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Polarisation: unipolar Drain current: 0.18A Power dissipation: 0.272W On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V Kind of channel: enhancement Type of transistor: N-MOSFET x2 |
auf Bestellung 1789 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJD4001NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 0.25A SC88Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 272mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 53084 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJD4001NT1G | Hersteller : onsemi |
MOSFETs 30V 250mA Dual N-Channel |
auf Bestellung 115656 Stücke: Lieferzeit 10-14 Tag (e) |
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