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2SK4089LS 2SK4089LS onsemi 2SK4089LS.pdf Description: MOSFET N-CH 650V 8.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4117LS 2SK4117LS onsemi 2SK4117LS.pdf Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4126 2SK4126 onsemi 2SK4126.pdf Description: MOSFET N-CH 650V 15A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4177-DL-E 2SK4177-DL-E onsemi ena0869-d.pdf Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4210 2SK4210 onsemi 2SK4210.pdf Description: MOSFET N-CH 900V 10A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4221 2SK4221 onsemi 2SK4221.pdf Description: MOSFET N-CH 500V 26A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4222 2SK4222 onsemi 2SK4222.pdf Description: MOSFET N-CH 600V 23A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
Produkt ist nicht verfügbar
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3LN01C-TB-H 3LN01C-TB-H onsemi 3LN01C.pdf Description: MOSFET N-CH 30V 150MA 3CP
Produkt ist nicht verfügbar
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3LN01S-TL-E 3LN01S-TL-E onsemi 3LN01S.pdf Description: MOSFET N-CH 30V 150MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Produkt ist nicht verfügbar
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3LN01SS-TL-H 3LN01SS-TL-H onsemi 3LN01S.pdf Description: MOSFET N-CH 30V 150MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Produkt ist nicht verfügbar
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3LP01C-TB-H 3LP01C-TB-H onsemi 3LP01C.pdf Description: MOSFET P-CH 30V 100MA 3CP
Produkt ist nicht verfügbar
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55GN01CA-TB-E 55GN01CA-TB-E onsemi 55gn01ca-d.pdf Description: RF TRANS NPN 10V 4.5GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-CP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
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5LN01M-TL-H 5LN01M-TL-H onsemi 5LN01M.pdf Description: MOSFET N-CH 50V 100MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Produkt ist nicht verfügbar
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5LN01SP-AC 5LN01SP-AC onsemi mosfets?documentNotFound=3&documentId=77736 Description: MOSFET N-CH 50V 100MA 3SPA
Produkt ist nicht verfügbar
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ATP101-TL-H ATP101-TL-H onsemi ena1646-d.pdf Description: MOSFET P-CH 30V 25A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Produkt ist nicht verfügbar
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ATP107-TL-H ATP107-TL-H onsemi ATP107.pdf Description: MOSFET P-CH 40V 50A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Produkt ist nicht verfügbar
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ATP112-TL-H ATP112-TL-H onsemi Description: MOSFET P-CH 60V 25A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Produkt ist nicht verfügbar
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ATP214-TL-H ATP214-TL-H onsemi ena1712-d.pdf Description: MOSFET N-CH 60V 75A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 38A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 20 V
Produkt ist nicht verfügbar
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ATP216-TL-H ATP216-TL-H onsemi atp216-d.pdf Description: MOSFET N-CH 50V 35A ATPAK
Produkt ist nicht verfügbar
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ATP218-TL-H ATP218-TL-H onsemi Description: MOSFET N-CH 30V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 4.5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
Produkt ist nicht verfügbar
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ATP302-TL-H ATP302-TL-H onsemi Description: MOSFET P-CH 60V 70A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
Produkt ist nicht verfügbar
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ATP613-TL-H ATP613-TL-H onsemi mosfets?documentNotFound=3&documentId=64428 Description: MOSFET N-CH 500V 5.5A ATPAK
Produkt ist nicht verfügbar
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BBS3002-DL-E BBS3002-DL-E onsemi Description: MOSFET P-CH 60V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
Produkt ist nicht verfügbar
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BFL4026 BFL4026 onsemi bfl4026-d.pdf Description: MOSFET N-CH 900V 3.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Produkt ist nicht verfügbar
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BMS4007 BMS4007 onsemi bms4007-d.pdf Description: MOSFET N-CH 75V 60A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
Produkt ist nicht verfügbar
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CAT24C02HU4IGT3A CAT24C02HU4IGT3A onsemi CAT24C01%2C2%2C4%2C8%2C16.pdf Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT24C04HU4I-GT3 CAT24C04HU4I-GT3 onsemi cat24c01-d.pdf Description: IC EEPROM 4KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.47 EUR
Mindestbestellmenge: 3000
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CAT24C08HU4I-GT3 CAT24C08HU4I-GT3 onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CAT24C16HU4I-GT3 CAT24C16HU4I-GT3 onsemi cat24c01-d.pdf Description: IC EEPROM 16KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.51 EUR
6000+0.50 EUR
9000+0.49 EUR
15000+0.48 EUR
21000+0.47 EUR
Mindestbestellmenge: 3000
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CAT24C128HU4IGT3 CAT24C128HU4IGT3 onsemi cat24c128-d.pdf Description: IC EEPROM 128KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT24C256HU4IGT3 CAT24C256HU4IGT3 onsemi cat24c256-d.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CAT24C32HU3I-GT3 CAT24C32HU3I-GT3 onsemi CAT24C32.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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CAT25160HU2I-GT3 CAT25160HU2I-GT3 onsemi CAT25080%2C%20CAT25160.pdf Description: IC EEPROM 16KBIT SPI 10MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x2)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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CAT25640HU3I-GT3 CAT25640HU3I-GT3 onsemi CAT25640_Rev2018.pdf Description: IC EEPROM 64KBIT SPI 10MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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CAT93C86ZD4I-GT3 CAT93C86ZD4I-GT3 onsemi CAT93C86.pdf Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
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CAT9554AHV4I-GT2 CAT9554AHV4I-GT2 onsemi Description: IC XPNDR 400KHZ I2C SMBUS 16TQFN
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-TQFN (4x4)
Current - Output Source/Sink: 10mA, 24mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CPH3448-TL-H CPH3448-TL-H onsemi Description: MOSFET N-CH 30V 4A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Produkt ist nicht verfügbar
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CPH5506-TL-E CPH5506-TL-E onsemi cph5506-d.pdf Description: TRANS NPN/PNP 30V 1.5A 5CPH
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CPH5524-TL-E CPH5524-TL-E onsemi cph5524-d.pdf Description: TRANS NPN/PNP 50V 3A 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 5-CPH
Part Status: Active
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CPH6003A-TL-E CPH6003A-TL-E onsemi cph6003a-d.pdf Description: RF TRANS NPN 12V 7GHZ 6-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: 6-CPH
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CPH6223-TL-E CPH6223-TL-E onsemi EN7386-D.html Description: TRANS NPN 50V 3A 6-CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
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CPH6442-TL-E CPH6442-TL-E onsemi cph6442-d.pdf Description: MOSFET N-CH 60V 6A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
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DCD010-TB-E DCD010-TB-E onsemi DCD010.pdf Description: DIODE ARRAY GP 20V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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DCG010-TL-E DCG010-TL-E onsemi DCG010.pdf Description: DIODE ARRAY GP 80V 100MA MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: MCP
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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EC4H08C-TL-H EC4H08C-TL-H onsemi EC4H08C.pdf Description: RF TRANS NPN 3.5V 24GHZ ECSP1008
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17dB
Power - Max: 50mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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EC4H09C-TL-H EC4H09C-TL-H onsemi EC4H09C.pdf Description: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
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ECH8310-TL-H ECH8310-TL-H onsemi ech8310-d.pdf Description: MOSFET P-CH 30V 9A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
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ECH8652-TL-H ECH8652-TL-H onsemi ECH8652.pdf Description: MOSFET 2P-CH 12V 6A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
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ECH8653-TL-H ECH8653-TL-H onsemi Description: MOSFET 2N-CH 20V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
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ECH8660-TL-H ECH8660-TL-H onsemi ech8660-d.pdf Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
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EFC4618R-TR EFC4618R-TR onsemi EFC4618R.pdf Description: MOSFET 2N-CH EFCP1818
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Supplier Device Package: EFCP1818-4CC-037
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EMH1307-TL-H EMH1307-TL-H onsemi EMH1307.pdf Description: MOSFET P-CH 20V 6.5A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
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EMH1405-TL-H EMH1405-TL-H onsemi Description: MOSFET N-CH 30V 8.5A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 10 V
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EMH2409-TL-H EMH2409-TL-H onsemi Description: MOSFET 2N-CH 30V 4A EMH8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-EMH
Part Status: Obsolete
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EMH2801-TL-H EMH2801-TL-H onsemi Description: MOSFET P-CH 20V 3A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
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FW707-TL-E FW707-TL-E onsemi FW707.pdf Description: MOSFET 2P-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOP
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FW813-TL-H FW813-TL-H onsemi FW813.pdf Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 20V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOP
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FW907-TL-E FW907-TL-E onsemi FW907.pdf Description: MOSFET N/P-CH 30V 10A/8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOP
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LA1140-E LA1140-E onsemi Description: IC FM IF SYSTEM CAR RADIO 16SIP
Packaging: Tube
Package / Case: 16-SIP Formed Leads
Mounting Type: Through Hole
Function: IF Receiver
RF Type: FM
Supplier Device Package: 16-SIP
Part Status: Obsolete
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LA1145M-TLM-E LA1145M-TLM-E onsemi la1145m-d.pdf Description: IC FM IF SYSTEM CAR RADIO 20MFP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Quadrature Detector
RF Type: FM
Supplier Device Package: 20-MFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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2SK4089LS 2SK4089LS.pdf
2SK4089LS
Hersteller: onsemi
Description: MOSFET N-CH 650V 8.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
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2SK4117LS 2SK4117LS.pdf
2SK4117LS
Hersteller: onsemi
Description: MOSFET N-CH 400V 10.4A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4126 2SK4126.pdf
2SK4126
Hersteller: onsemi
Description: MOSFET N-CH 650V 15A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4177-DL-E ena0869-d.pdf
2SK4177-DL-E
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 13Ohm @ 1A, 10V
Power Dissipation (Max): 80W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4210 2SK4210.pdf
2SK4210
Hersteller: onsemi
Description: MOSFET N-CH 900V 10A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 190W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4221 2SK4221.pdf
2SK4221
Hersteller: onsemi
Description: MOSFET N-CH 500V 26A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
Produkt ist nicht verfügbar
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2SK4222 2SK4222.pdf
2SK4222
Hersteller: onsemi
Description: MOSFET N-CH 600V 23A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 30 V
Produkt ist nicht verfügbar
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3LN01C-TB-H 3LN01C.pdf
3LN01C-TB-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA 3CP
Produkt ist nicht verfügbar
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3LN01S-TL-E 3LN01S.pdf
3LN01S-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Produkt ist nicht verfügbar
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3LN01SS-TL-H 3LN01S.pdf
3LN01SS-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: SMCP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
Produkt ist nicht verfügbar
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3LP01C-TB-H 3LP01C.pdf
3LP01C-TB-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 100MA 3CP
Produkt ist nicht verfügbar
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55GN01CA-TB-E 55gn01ca-d.pdf
55GN01CA-TB-E
Hersteller: onsemi
Description: RF TRANS NPN 10V 4.5GHZ 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 10V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Supplier Device Package: 3-CP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
5LN01M-TL-H 5LN01M.pdf
5LN01M-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.8Ohm @ 50mA, 4V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.6 pF @ 10 V
Produkt ist nicht verfügbar
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5LN01SP-AC mosfets?documentNotFound=3&documentId=77736
5LN01SP-AC
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3SPA
Produkt ist nicht verfügbar
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ATP101-TL-H ena1646-d.pdf
ATP101-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 25A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Produkt ist nicht verfügbar
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ATP107-TL-H ATP107.pdf
ATP107-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 40V 50A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
Produkt ist nicht verfügbar
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ATP112-TL-H
ATP112-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 60V 25A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Produkt ist nicht verfügbar
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ATP214-TL-H ena1712-d.pdf
ATP214-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 38A, 10V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 20 V
Produkt ist nicht verfügbar
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ATP216-TL-H atp216-d.pdf
ATP216-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 50V 35A ATPAK
Produkt ist nicht verfügbar
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ATP218-TL-H
ATP218-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 4.5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ATP302-TL-H
ATP302-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 60V 70A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 35A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 20 V
Produkt ist nicht verfügbar
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ATP613-TL-H mosfets?documentNotFound=3&documentId=64428
ATP613-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 500V 5.5A ATPAK
Produkt ist nicht verfügbar
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BBS3002-DL-E
BBS3002-DL-E
Hersteller: onsemi
Description: MOSFET P-CH 60V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: SMP-FD
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V
Produkt ist nicht verfügbar
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BFL4026 bfl4026-d.pdf
BFL4026
Hersteller: onsemi
Description: MOSFET N-CH 900V 3.5A TO220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Produkt ist nicht verfügbar
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BMS4007 bms4007-d.pdf
BMS4007
Hersteller: onsemi
Description: MOSFET N-CH 75V 60A TO220ML
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
Produkt ist nicht verfügbar
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CAT24C02HU4IGT3A CAT24C01%2C2%2C4%2C8%2C16.pdf
CAT24C02HU4IGT3A
Hersteller: onsemi
Description: IC EEPROM 2KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT24C04HU4I-GT3 cat24c01-d.pdf
CAT24C04HU4I-GT3
Hersteller: onsemi
Description: IC EEPROM 4KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08HU4I-GT3 cat24c01-d.pdf
CAT24C08HU4I-GT3
Hersteller: onsemi
Description: IC EEPROM 8KBIT I2C 400KHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CAT24C16HU4I-GT3 cat24c01-d.pdf
CAT24C16HU4I-GT3
Hersteller: onsemi
Description: IC EEPROM 16KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
6000+0.50 EUR
9000+0.49 EUR
15000+0.48 EUR
21000+0.47 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C128HU4IGT3 cat24c128-d.pdf
CAT24C128HU4IGT3
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT24C256HU4IGT3 cat24c256-d.pdf
CAT24C256HU4IGT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.03 EUR
6000+1.00 EUR
9000+0.99 EUR
Mindestbestellmenge: 3000
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CAT24C32HU3I-GT3 CAT24C32.pdf
CAT24C32HU3I-GT3
Hersteller: onsemi
Description: IC EEPROM 32KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN-EP (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25160HU2I-GT3 CAT25080%2C%20CAT25160.pdf
CAT25160HU2I-GT3
Hersteller: onsemi
Description: IC EEPROM 16KBIT SPI 10MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x2)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT25640HU3I-GT3 CAT25640_Rev2018.pdf
CAT25640HU3I-GT3
Hersteller: onsemi
Description: IC EEPROM 64KBIT SPI 10MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CAT93C86ZD4I-GT3 CAT93C86.pdf
CAT93C86ZD4I-GT3
Hersteller: onsemi
Description: IC EEPROM 16KBIT SPI 3MHZ 8TDFN
Produkt ist nicht verfügbar
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CAT9554AHV4I-GT2
CAT9554AHV4I-GT2
Hersteller: onsemi
Description: IC XPNDR 400KHZ I2C SMBUS 16TQFN
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C, SMBus
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-TQFN (4x4)
Current - Output Source/Sink: 10mA, 24mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CPH3448-TL-H
CPH3448-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 4A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 3-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Produkt ist nicht verfügbar
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CPH5506-TL-E cph5506-d.pdf
CPH5506-TL-E
Hersteller: onsemi
Description: TRANS NPN/PNP 30V 1.5A 5CPH
Produkt ist nicht verfügbar
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CPH5524-TL-E cph5524-d.pdf
CPH5524-TL-E
Hersteller: onsemi
Description: TRANS NPN/PNP 50V 3A 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 5-CPH
Part Status: Active
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CPH6003A-TL-E cph6003a-d.pdf
CPH6003A-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 12V 7GHZ 6-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Supplier Device Package: 6-CPH
auf Bestellung 192000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
15000+0.26 EUR
21000+0.25 EUR
30000+0.24 EUR
Mindestbestellmenge: 3000
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CPH6223-TL-E EN7386-D.html
CPH6223-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 3A 6-CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
Produkt ist nicht verfügbar
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CPH6442-TL-E cph6442-d.pdf
CPH6442-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 60V 6A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 6-CPH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V
Produkt ist nicht verfügbar
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DCD010-TB-E DCD010.pdf
DCD010-TB-E
Hersteller: onsemi
Description: DIODE ARRAY GP 20V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
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DCG010-TL-E DCG010.pdf
DCG010-TL-E
Hersteller: onsemi
Description: DIODE ARRAY GP 80V 100MA MCP
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: MCP
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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EC4H08C-TL-H EC4H08C.pdf
EC4H08C-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 24GHZ ECSP1008
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 17dB
Power - Max: 50mW
Current - Collector (Ic) (Max): 15mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Supplier Device Package: 4-ECSP1008
Produkt ist nicht verfügbar
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EC4H09C-TL-H EC4H09C.pdf
EC4H09C-TL-H
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
Produkt ist nicht verfügbar
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ECH8310-TL-H ech8310-d.pdf
ECH8310-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 30V 9A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
Produkt ist nicht verfügbar
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ECH8652-TL-H ECH8652.pdf
ECH8652-TL-H
Hersteller: onsemi
Description: MOSFET 2P-CH 12V 6A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Produkt ist nicht verfügbar
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ECH8653-TL-H
ECH8653-TL-H
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 7.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 8V
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Produkt ist nicht verfügbar
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ECH8660-TL-H ech8660-d.pdf
ECH8660-TL-H
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
Produkt ist nicht verfügbar
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EFC4618R-TR EFC4618R.pdf
EFC4618R-TR
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP1818
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Supplier Device Package: EFCP1818-4CC-037
Produkt ist nicht verfügbar
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EMH1307-TL-H EMH1307.pdf
EMH1307-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 20V 6.5A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Produkt ist nicht verfügbar
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EMH1405-TL-H
EMH1405-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.5A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 10 V
Produkt ist nicht verfügbar
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EMH2409-TL-H
EMH2409-TL-H
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 4A EMH8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-EMH
Part Status: Obsolete
Produkt ist nicht verfügbar
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EMH2801-TL-H
EMH2801-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 8EMH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 8-EMH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Produkt ist nicht verfügbar
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FW707-TL-E FW707.pdf
FW707-TL-E
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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FW813-TL-H FW813.pdf
FW813-TL-H
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 20V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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FW907-TL-E FW907.pdf
FW907-TL-E
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 10A/8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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LA1140-E
LA1140-E
Hersteller: onsemi
Description: IC FM IF SYSTEM CAR RADIO 16SIP
Packaging: Tube
Package / Case: 16-SIP Formed Leads
Mounting Type: Through Hole
Function: IF Receiver
RF Type: FM
Supplier Device Package: 16-SIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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LA1145M-TLM-E la1145m-d.pdf
LA1145M-TLM-E
Hersteller: onsemi
Description: IC FM IF SYSTEM CAR RADIO 20MFP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Function: Quadrature Detector
RF Type: FM
Supplier Device Package: 20-MFP
Part Status: Obsolete
Produkt ist nicht verfügbar
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