FDD8896 JGSEMI
Hersteller: JGSEMI
Transistor N-Channel MOSFET; 30V; 20V; 8,5mOhm; 80A; 54W; -55°C ~ 125°C; Equivalent: FDD8896 Onsemi; FDD8896 JGSEMI TFDD8896 JGS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.44 EUR |
Produktrezensionen
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Technische Details FDD8896 JGSEMI
Description: MOSFET N-CH 30V 17A/94A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V.
Weitere Produktangebote FDD8896 nach Preis ab 0.54 EUR bis 2.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDD8896 | HXY MOSFET |
Transistor N-Channel MOSFET; 30V; 20V; 9mOhm; 80A; 54W; -55°C ~ 150°C; Equivalent: FDD8896 Onsemi; FDD8896 HXY MOSFET TFDD8896 HXYAnzahl je Verpackung: 50 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD8896 | onsemi |
Description: MOSFET N-CH 30V 17A/94A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 11125 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2117 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 806 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 644436 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 8548 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 177926 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 6007 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8896 | UMW |
Transistor N-Channel MOSFET; 30V; 20V; 92mOhm; 94A; 80W; -55°C ~ 175°C; Equivalent: FDD8896 Onsemi; FDD8896 UMW TFDD8896 UMWAnzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FDD8896 | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
auf Bestellung 851093 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | UMW |
Description: MOSFET N-CH 30V 94A DPAKPackaging: Cut Tape (CT) |
auf Bestellung 2496 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | onsemi |
Description: MOSFET N-CH 30V 17A/94A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
auf Bestellung 18317 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | onsemi |
MOSFETs 30V N-Channel PowerTrench |
auf Bestellung 4025 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | ON Semiconductor |
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDD8896 |
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Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 30V; 20V; 9mOhm; 80A; 54W; -55°C ~ 150°C; Equivalent: FDD8896 Onsemi; FDD8896 HXY MOSFET TFDD8896 HXY
Anzahl je Verpackung: 50 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 9mOhm; 80A; 54W; -55°C ~ 150°C; Equivalent: FDD8896 Onsemi; FDD8896 HXY MOSFET TFDD8896 HXY
Anzahl je Verpackung: 50 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.54 EUR |
| FDD8896 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.61 EUR |
| 5000+ | 0.57 EUR |
| 7500+ | 0.56 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 11125 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| 10000+ | 0.66 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2117 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 806 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 644436 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| 10000+ | 0.66 EUR |
| 100000+ | 0.54 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 8548 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 177926 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| 10000+ | 0.66 EUR |
| 100000+ | 0.54 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 6007 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 656+ | 0.83 EUR |
| 1000+ | 0.75 EUR |
| FDD8896 |
![]() |
Hersteller: UMW
Transistor N-Channel MOSFET; 30V; 20V; 92mOhm; 94A; 80W; -55°C ~ 175°C; Equivalent: FDD8896 Onsemi; FDD8896 UMW TFDD8896 UMW
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 92mOhm; 94A; 80W; -55°C ~ 175°C; Equivalent: FDD8896 Onsemi; FDD8896 UMW TFDD8896 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 0.89 EUR |
| FDD8896 |
![]() |
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 851093 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 472+ | 0.95 EUR |
| FDD8896 |
![]() |
auf Bestellung 2496 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| FDD8896 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 18317 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 13+ | 1.43 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |
| FDD8896 |
![]() |
Hersteller: onsemi
MOSFETs 30V N-Channel PowerTrench
MOSFETs 30V N-Channel PowerTrench
auf Bestellung 4025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.31 EUR |
| 10+ | 1.46 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.65 EUR |
| FDD8896 |
![]() |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 30V 17A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH




