Technische Details FQNL2N50BTA Fairchild
Description: MOSFET N-CH 500V 350MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-92-3, Packaging: Tape & Box (TB), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 1.5W (Tc), Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads).
Weitere Produktangebote FQNL2N50BTA
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQNL2N50BTA | onsemi |
 Description: MOSFET N-CH 500V 350MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92-3 Packaging: Tape & Box (TB) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQNL2N50BTA | onsemi |
Description: MOSFET N-CH 500V 350MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FQNL2N50BTA | onsemi / Fairchild |
MOSFET 500V N-Channel QFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQNL2N50BTA |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92-3
Packaging: Tape & Box (TB)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Description: MOSFET N-CH 500V 350MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-92-3
Packaging: Tape & Box (TB)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQNL2N50BTA |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQNL2N50BTA |
|
Hersteller: onsemi / Fairchild
MOSFET 500V N-Channel QFET
MOSFET 500V N-Channel QFET
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Im Einkaufswagen
Stück im Wert von UAH