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FDD390N15A | onsemi |
 Description: MOSFET N-CH 150V 26A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V |
auf Bestellung 9870 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86252 | onsemi |
Description: MOSFET N-CH 150V 5A/27A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
auf Bestellung 54987 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86520L | onsemi |
Description: MOSFET N-CH 60V 13.5A/22A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V |
auf Bestellung 6635 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8403 | onsemi |
Description: MOSFET 4N-CH 100V 3.1A 12MLP Packaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 35685 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS039N08B | onsemi |
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V |
auf Bestellung 7191 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7650DC | onsemi |
Description: MOSFET N-CH 30V 47A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V |
auf Bestellung 8111 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86300 | onsemi |
Description: MOSFET N-CH 80V 19A/80A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3547 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86256 | onsemi |
Description: MOSFET N-CH 150V 1.2A/3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN5346S20X | onsemi |
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
Produkt ist nicht verfügbar |
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FAN5346S30X | onsemi |
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
Produkt ist nicht verfügbar |
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FDC8602 | onsemi |
Description: MOSFET 2N-CH 100V 1.2A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 690mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 7167 Stücke: Lieferzeit 10-14 Tag (e) |
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FQNL2N50BTA | onsemi |
Description: MOSFET N-CH 500V 350MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
Produkt ist nicht verfügbar |
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KSA928AYTA | onsemi |
Description: TRANS PNP 30V 2A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
auf Bestellung 3148 Stücke: Lieferzeit 10-14 Tag (e) |
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SSN1N45BTA | onsemi |
Description: MOSFET N-CH 450V 500MA TO92-3 |
auf Bestellung 1398 Stücke: Lieferzeit 10-14 Tag (e) |
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74ACT08MTCX | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 18702 Stücke: Lieferzeit 10-14 Tag (e) |
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74ACT240MTCX | onsemi |
Description: IC BUFF INVERT 5.5V 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
auf Bestellung 13927 Stücke: Lieferzeit 10-14 Tag (e) |
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74LCX573MTCX | onsemi |
Description: IC LATCH OCT LV 5V I/O 20TSSOP |
Produkt ist nicht verfügbar |
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74VHC541MTCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 4833 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN6300AMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Open Loop, Over Voltage Voltage - Start Up: 16 V Part Status: Last Time Buy |
auf Bestellung 79613 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8880 | onsemi |
Description: MOSFET N-CH 30V 13A/58A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V |
auf Bestellung 10498 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | onsemi |
Description: MOSFET N-CH 30V 17A/94A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
auf Bestellung 12175 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC2514SDC | onsemi |
Description: MOSFET N-CH 25V 24A/40A DLCOOL33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V |
Produkt ist nicht verfügbar |
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FDMC3020DC | onsemi |
Description: MOSFET N-CH 30V 17A/40A DLCOOL33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Dual Cool ™ 33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDMS7698 | onsemi |
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V |
auf Bestellung 10119 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS2582 | onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V |
auf Bestellung 5466 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86106LZ | onsemi |
Description: MOSFET N-CH 100V 3.2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
auf Bestellung 27124 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB44N10TM | onsemi |
Description: MOSFET N-CH 100V 43.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 20262 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB7P20TM-F085 | onsemi |
Description: MOSFET P-CH 200V 7.3A D2PAK |
Produkt ist nicht verfügbar |
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FST3257MTCX | onsemi |
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Obsolete |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75639S3ST | onsemi |
Description: MOSFET N-CH 100V 56A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
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SG6901ASZ | onsemi |
Description: IC PFC CTR AV CURR 65KHZ 20SOIC Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 12V ~ 20V Frequency - Switching: 65kHz Mode: Average Current Supplier Device Package: 20-SOIC Current - Startup: 10 µA |
Produkt ist nicht verfügbar |
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FAN5622SX | onsemi |
Description: IC LED DRV LIN SGL WR 30MA 6SSOT Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 2 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Internal Switch(s): Yes Supplier Device Package: SuperSOT™-6 Dimming: Single-Wire Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 43285 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD390N15A | onsemi |
Description: MOSFET N-CH 150V 26A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86252 | onsemi |
Description: MOSFET N-CH 150V 5A/27A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
auf Bestellung 52500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86520L | onsemi |
Description: MOSFET N-CH 60V 13.5A/22A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6705B | onsemi |
Description: IC HALF BRIDGE DRIVER 38A 40PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 38A Technology: DrMOS Voltage - Load: 3V ~ 24V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8403 | onsemi |
Description: MOSFET 4N-CH 100V 3.1A 12MLP Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS039N08B | onsemi |
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7650DC | onsemi |
Description: MOSFET N-CH 30V 47A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86300 | onsemi |
Description: MOSFET N-CH 80V 19A/80A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86256 | onsemi |
Description: MOSFET N-CH 150V 1.2A/3A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V |
Produkt ist nicht verfügbar |
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FAN5346S20X | onsemi |
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN5346S30X | onsemi |
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDC8602 | onsemi |
Description: MOSFET 2N-CH 100V 1.2A SSOT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 690mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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QSE258 | onsemi |
Description: IC PHOTOSENSOR SIDELOOKER Packaging: Bulk Package / Case: Radial, 3 Lead, Side View Wavelength: 880nm Output Type: Open Collector Type: Photo Detector, Logic Output Operating Temperature: -40°C ~ 85°C (TA) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CAT4201AGEVB | onsemi |
Description: BOARD EVAL CAT4201 LED DRIVER Packaging: Bulk Features: Dimmable Voltage - Input: 12V Current - Output / Channel: 350mA Utilized IC / Part: CAT4201 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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MC34063LBGEVB | onsemi |
Description: EVAL BOARD FOR MC34063 Packaging: Bulk Voltage - Output: 12V Voltage - Input: 3V ~ 40V Current - Output: 1.5A Regulator Topology: Boost Board Type: Fully Populated Utilized IC / Part: MC34063 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCL30105GEVB | onsemi |
Description: BOARD EVAL 80V 350 FOR LED DRV Packaging: Box Voltage - Output: 60V Current - Output / Channel: 350mA Utilized IC / Part: NCL30105 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NCN4555GEVB | onsemi |
Description: BOARD EVAL FOR NCN4555 SIM CARD Packaging: Bulk Function: SIM Card Type: Interface Utilized IC / Part: NCN4555 Supplied Contents: Board(s) Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP1013ADAPGEVB | onsemi |
Description: EVAL BOARD FOR NCP1013 Packaging: Bulk Voltage - Output: 12V Voltage - Input: 230VAC Current - Output: 850mA Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1013 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Part Status: Obsolete Power - Output: 6W Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP1237PRINTGEVB | onsemi |
Description: EVAL BOARD FOR NCP1237 Packaging: Bulk Voltage - Output: 32V Voltage - Input: 85 ~ 265 VAC Current - Output: 1A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1237 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Part Status: Active Power - Output: 32 W Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP1380BGEVB | onsemi |
Description: EVAL BOARD FOR NCP1380B Packaging: Bulk Voltage - Output: 19V Voltage - Input: 85 ~ 265 VAC Current - Output: 4A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1380B Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Part Status: Active Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP1593AGEVB | onsemi |
Description: EVAL BOARD FOR NCP1593A Packaging: Bulk Voltage - Input: 4V ~ 5.5V Current - Output: 3A Contents: Board(s) Frequency - Switching: 1MHz Regulator Topology: Buck Utilized IC / Part: NCP1593A Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP1593BGEVB | onsemi |
Description: EVAL BOARD FOR NCP1593B Packaging: Bulk Voltage - Input: 4V ~ 5.5V Current - Output: 3A Contents: Board(s) Frequency - Switching: 1MHz Regulator Topology: Buck Utilized IC / Part: NCP1593B Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP1631PFCGEVB | onsemi |
Description: EVAL BOARD FOR NCP1631 Packaging: Bulk Function: Power Factor Correction Type: Power Management Utilized IC / Part: NCP1631 Supplied Contents: Board(s) Embedded: No Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCS2200AGEVB | onsemi |
Description: BOARD EVAL NCS2200A COMP UDFN6 Packaging: Bulk Function: Comparator, Single Type: Linear Utilized IC / Part: NCS2200A Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS2564DTBGEVB | onsemi |
Description: EVAL BOARD FOR NCS2564 Packaging: Bulk Function: Amplifier, Quad Type: Video Utilized IC / Part: NCS2564 Supplied Contents: Board(s) Primary Attributes: Gain 6dB, Reconstruction Filters Embedded: No Contents: Board(s) Secondary Attributes: AC- or DC-Coupled Inputs and Outputs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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QSB34GR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD GW Packaging: Cut Tape (CT) Package / Case: 2-SMD, Gull Wing Wavelength: 940nm Mounting Type: Surface Mount Diode Type: Pin Operating Temperature: -25°C ~ 85°C Response Time: 50ns Viewing Angle: 120° Spectral Range: 730nm ~ 1100nm Active Area: 6.5mm² Current - Dark (Typ): 30nA Voltage - DC Reverse (Vr) (Max): 32 V |
auf Bestellung 1709666 Stücke: Lieferzeit 10-14 Tag (e) |
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4N25SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CNY173SR2M | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 200% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 2µs, 3µs Rise / Fall Time (Typ): 4µs, 3.5µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 4130 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDD390N15A |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.2 EUR |
| 12+ | 1.54 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.92 EUR |
| FDD86252 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
auf Bestellung 54987 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 16+ | 1.11 EUR |
| 100+ | 1.04 EUR |
| FDMC86520L |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
auf Bestellung 6635 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.7 EUR |
| FDMQ8403 |
|
Hersteller: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 35685 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 4.01 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.85 EUR |
| FDMS039N08B |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
auf Bestellung 7191 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.28 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.74 EUR |
| FDMS7650DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
auf Bestellung 8111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.26 EUR |
| 10+ | 3.44 EUR |
| 100+ | 2.4 EUR |
| 500+ | 2.07 EUR |
| FDMS86300 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
auf Bestellung 3547 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |
| FDT86256 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.87 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.23 EUR |
| FAN5346S20X |
|
Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN5346S30X |
|
Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC8602 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 7167 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.03 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.04 EUR |
| FQNL2N50BTA |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA928AYTA |
|
Hersteller: onsemi
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 3148 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| SSN1N45BTA |
|
Hersteller: onsemi
Description: MOSFET N-CH 450V 500MA TO92-3
Description: MOSFET N-CH 450V 500MA TO92-3
auf Bestellung 1398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.6 EUR |
| 13+ | 1.41 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.69 EUR |
| 74ACT08MTCX |
|
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 18702 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 47+ | 0.38 EUR |
| 52+ | 0.34 EUR |
| 100+ | 0.29 EUR |
| 250+ | 0.27 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| 74ACT240MTCX |
|
Hersteller: onsemi
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 13927 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 19+ | 0.95 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.7 EUR |
| 500+ | 0.67 EUR |
| 74LCX573MTCX |
|
Hersteller: onsemi
Description: IC LATCH OCT LV 5V I/O 20TSSOP
Description: IC LATCH OCT LV 5V I/O 20TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC541MTCX |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 4833 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 22+ | 0.8 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.63 EUR |
| 250+ | 0.59 EUR |
| 500+ | 0.56 EUR |
| FAN6300AMY |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
auf Bestellung 79613 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 11+ | 1.64 EUR |
| 25+ | 1.38 EUR |
| 100+ | 1.08 EUR |
| 250+ | 0.93 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.76 EUR |
| FDD8880 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
auf Bestellung 10498 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 15+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| FDD8896 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 12175 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 12+ | 1.51 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.72 EUR |
| FDMC2514SDC |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC3020DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7698 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
auf Bestellung 10119 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 17+ | 1.06 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.52 EUR |
| FDS2582 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
auf Bestellung 5466 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.95 EUR |
| FDT86106LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
auf Bestellung 27124 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 11+ | 1.74 EUR |
| 100+ | 1.2 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.97 EUR |
| FQB44N10TM |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 20262 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.15 EUR |
| FQB7P20TM-F085 |
|
Hersteller: onsemi
Description: MOSFET P-CH 200V 7.3A D2PAK
Description: MOSFET P-CH 200V 7.3A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST3257MTCX |
|
Hersteller: onsemi
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| HUF75639S3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.24 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.38 EUR |
| SG6901ASZ |
Hersteller: onsemi
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 12V ~ 20V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Current - Startup: 10 µA
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 12V ~ 20V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN5622SX |
|
Hersteller: onsemi
Description: IC LED DRV LIN SGL WR 30MA 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 2
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRV LIN SGL WR 30MA 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 2
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 43285 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.15 EUR |
| 14+ | 1.31 EUR |
| 25+ | 1.09 EUR |
| 100+ | 0.84 EUR |
| 250+ | 0.72 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.58 EUR |
| FDD390N15A |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.79 EUR |
| 5000+ | 0.76 EUR |
| 7500+ | 0.75 EUR |
| FDD86252 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.9 EUR |
| 5000+ | 0.85 EUR |
| FDMC86520L |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.62 EUR |
| FDMF6705B |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 38A
Technology: DrMOS
Voltage - Load: 3V ~ 24V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 38A
Technology: DrMOS
Voltage - Load: 3V ~ 24V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.51 EUR |
| FDMQ8403 |
|
Hersteller: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.33 EUR |
| FDMS039N08B |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.65 EUR |
| FDMS7650DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.69 EUR |
| FDMS86300 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.51 EUR |
| FDT86256 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN5346S20X |
|
Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN5346S30X |
|
Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC8602 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.89 EUR |
| 6000+ | 0.85 EUR |
| QSE258 |
|
Hersteller: onsemi
Description: IC PHOTOSENSOR SIDELOOKER
Packaging: Bulk
Package / Case: Radial, 3 Lead, Side View
Wavelength: 880nm
Output Type: Open Collector
Type: Photo Detector, Logic Output
Operating Temperature: -40°C ~ 85°C (TA)
Part Status: Obsolete
Description: IC PHOTOSENSOR SIDELOOKER
Packaging: Bulk
Package / Case: Radial, 3 Lead, Side View
Wavelength: 880nm
Output Type: Open Collector
Type: Photo Detector, Logic Output
Operating Temperature: -40°C ~ 85°C (TA)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT4201AGEVB |
|
Hersteller: onsemi
Description: BOARD EVAL CAT4201 LED DRIVER
Packaging: Bulk
Features: Dimmable
Voltage - Input: 12V
Current - Output / Channel: 350mA
Utilized IC / Part: CAT4201
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL CAT4201 LED DRIVER
Packaging: Bulk
Features: Dimmable
Voltage - Input: 12V
Current - Output / Channel: 350mA
Utilized IC / Part: CAT4201
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 145.73 EUR |
| MC34063LBGEVB |
Hersteller: onsemi
Description: EVAL BOARD FOR MC34063
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: MC34063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR MC34063
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: MC34063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCL30105GEVB |
|
Hersteller: onsemi
Description: BOARD EVAL 80V 350 FOR LED DRV
Packaging: Box
Voltage - Output: 60V
Current - Output / Channel: 350mA
Utilized IC / Part: NCL30105
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL 80V 350 FOR LED DRV
Packaging: Box
Voltage - Output: 60V
Current - Output / Channel: 350mA
Utilized IC / Part: NCL30105
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 220 EUR |
| NCN4555GEVB |
|
Hersteller: onsemi
Description: BOARD EVAL FOR NCN4555 SIM CARD
Packaging: Bulk
Function: SIM Card
Type: Interface
Utilized IC / Part: NCN4555
Supplied Contents: Board(s)
Embedded: No
Description: BOARD EVAL FOR NCN4555 SIM CARD
Packaging: Bulk
Function: SIM Card
Type: Interface
Utilized IC / Part: NCN4555
Supplied Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1013ADAPGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1013
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 230VAC
Current - Output: 850mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1013
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 6W
Contents: Board(s)
Description: EVAL BOARD FOR NCP1013
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 230VAC
Current - Output: 850mA
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1013
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 6W
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1237PRINTGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1237
Packaging: Bulk
Voltage - Output: 32V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 1A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1237
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 32 W
Contents: Board(s)
Description: EVAL BOARD FOR NCP1237
Packaging: Bulk
Voltage - Output: 32V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 1A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1237
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 32 W
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1380BGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1380B
Packaging: Bulk
Voltage - Output: 19V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 4A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1380B
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR NCP1380B
Packaging: Bulk
Voltage - Output: 19V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 4A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1380B
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1593AGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1593A
Packaging: Bulk
Voltage - Input: 4V ~ 5.5V
Current - Output: 3A
Contents: Board(s)
Frequency - Switching: 1MHz
Regulator Topology: Buck
Utilized IC / Part: NCP1593A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR NCP1593A
Packaging: Bulk
Voltage - Input: 4V ~ 5.5V
Current - Output: 3A
Contents: Board(s)
Frequency - Switching: 1MHz
Regulator Topology: Buck
Utilized IC / Part: NCP1593A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1593BGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1593B
Packaging: Bulk
Voltage - Input: 4V ~ 5.5V
Current - Output: 3A
Contents: Board(s)
Frequency - Switching: 1MHz
Regulator Topology: Buck
Utilized IC / Part: NCP1593B
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR NCP1593B
Packaging: Bulk
Voltage - Input: 4V ~ 5.5V
Current - Output: 3A
Contents: Board(s)
Frequency - Switching: 1MHz
Regulator Topology: Buck
Utilized IC / Part: NCP1593B
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1631PFCGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1631
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: NCP1631
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Description: EVAL BOARD FOR NCP1631
Packaging: Bulk
Function: Power Factor Correction
Type: Power Management
Utilized IC / Part: NCP1631
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCS2200AGEVB |
|
Hersteller: onsemi
Description: BOARD EVAL NCS2200A COMP UDFN6
Packaging: Bulk
Function: Comparator, Single
Type: Linear
Utilized IC / Part: NCS2200A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Description: BOARD EVAL NCS2200A COMP UDFN6
Packaging: Bulk
Function: Comparator, Single
Type: Linear
Utilized IC / Part: NCS2200A
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.58 EUR |
| NCS2564DTBGEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCS2564
Packaging: Bulk
Function: Amplifier, Quad
Type: Video
Utilized IC / Part: NCS2564
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Embedded: No
Contents: Board(s)
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Description: EVAL BOARD FOR NCS2564
Packaging: Bulk
Function: Amplifier, Quad
Type: Video
Utilized IC / Part: NCS2564
Supplied Contents: Board(s)
Primary Attributes: Gain 6dB, Reconstruction Filters
Embedded: No
Contents: Board(s)
Secondary Attributes: AC- or DC-Coupled Inputs and Outputs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| QSB34GR |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
auf Bestellung 1709666 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.85 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.82 EUR |
| 4N25SR2VM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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| CNY173SR2M |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 4130 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 21+ | 0.86 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.53 EUR |