Produkte > ONSEMI > FDS6576
FDS6576

FDS6576 onsemi

fds6576-d.pdf
Hersteller: onsemi
Description: MOSFET P-CH 20V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.75 EUR
5000+0.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDS6576 onsemi

Description: MOSFET P-CH 20V 11A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

Weitere Produktangebote FDS6576 nach Preis ab 0.8 EUR bis 1.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDS6576 FDS6576 onsemi / Fairchild FDS6576_D-2313224.pdf MOSFETs SO-8 P-CH -20V
auf Bestellung 7603 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.74 EUR
10+1.44 EUR
100+1.14 EUR
500+0.98 EUR
1000+0.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDS6576 FDS6576 onsemi fds6576-d.pdf Description: MOSFET P-CH 20V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 10 V
auf Bestellung 7030 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FDS6576 FDS6576_D-2313224.pdf
FDS6576
Hersteller: onsemi / Fairchild
MOSFETs SO-8 P-CH -20V
auf Bestellung 7603 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.44 EUR
100+1.14 EUR
500+0.98 EUR
1000+0.81 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDS6576 fds6576-d.pdf
FDS6576
Hersteller: onsemi
Description: MOSFET P-CH 20V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 10 V
auf Bestellung 7030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH