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FDD6612A

FDD6612A Fairchild Semiconductor

FAIR-S-A0002365626-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 9
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252, (D-Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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Technische Details FDD6612A Fairchild Semiconductor

Description: MOSFET N-CH 30V 9.5A/30A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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FDD6612A FDD6612A Hersteller : onsemi FDD,FDU6612A.pdf Description: MOSFET N-CH 30V 9.5A/30A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD6612A FDD6612A Hersteller : onsemi FDD,FDU6612A.pdf Description: MOSFET N-CH 30V 9.5A/30A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD6612A FDD6612A Hersteller : onsemi / Fairchild FDD6612A_D-2312255.pdf MOSFET 30V N-Ch PowerTrench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH