FDS3590 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.63 EUR |
| 5000+ | 0.58 EUR |
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Technische Details FDS3590 onsemi
Description: MOSFET N-CH 80V 6.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V.
Weitere Produktangebote FDS3590 nach Preis ab 0.58 EUR bis 2.66 EUR
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FDS3590 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Case: SO8 Mounting: SMD On-state resistance: 86mΩ Power dissipation: 2.5W Drain current: 6.5A Gate-source voltage: ±20V Drain-source voltage: 80V Polarisation: unipolar |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3590 | onsemi |
Description: MOSFET N-CH 80V 6.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V |
auf Bestellung 5105 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3590 | onsemi |
MOSFETs SO-8 N-CH 80V |
auf Bestellung 3828 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3590 | onsemi / Fairchild |
MOSFET SO-8 N-CH 80V |
auf Bestellung 1914 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDS3590 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
Mounting: SMD
On-state resistance: 86mΩ
Power dissipation: 2.5W
Drain current: 6.5A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
Mounting: SMD
On-state resistance: 86mΩ
Power dissipation: 2.5W
Drain current: 6.5A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Polarisation: unipolar
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 49+ | 1.49 EUR |
| 70+ | 1.02 EUR |
| 86+ | 0.83 EUR |
| 115+ | 0.62 EUR |
| FDS3590 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
auf Bestellung 5105 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.48 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |
| FDS3590 |
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Hersteller: onsemi
MOSFETs SO-8 N-CH 80V
MOSFETs SO-8 N-CH 80V
auf Bestellung 3828 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.68 EUR |
| 2500+ | 0.58 EUR |
| FDS3590 |
|
Hersteller: onsemi / Fairchild
MOSFET SO-8 N-CH 80V
MOSFET SO-8 N-CH 80V
auf Bestellung 1914 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH