FDS3590 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.63 EUR |
| 5000+ | 0.58 EUR |
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Technische Details FDS3590 onsemi
Description: MOSFET N-CH 80V 6.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V.
Weitere Produktangebote FDS3590 nach Preis ab 0.6 EUR bis 2.36 EUR
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FDS3590 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 80V Drain current: 6.5A On-state resistance: 86mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 472 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS3590 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 80V Drain current: 6.5A On-state resistance: 86mΩ Type of transistor: N-MOSFET |
auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS3590 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 6.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V |
auf Bestellung 5105 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3590 | Hersteller : onsemi / Fairchild |
MOSFET SO-8 N-CH 80V |
auf Bestellung 1914 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3590 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS3590 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |