| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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NCP1337ADAPEVB | onsemi |
Description: EVAL BOARD FOR NCP1337Packaging: Box Voltage - Output: 12V Voltage - Input: 90 ~ 265 VAC Current - Output: 5A Frequency - Switching: 130kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1337 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Part Status: Obsolete Power - Output: 60W Contents: Board(s) |
Produkt ist nicht verfügbar |
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NCP1380DGEVB | onsemi |
Description: EVAL BOARD FOR NCP1380Packaging: Box Voltage - Output: 19V Voltage - Input: 85 ~ 265 VAC Current - Output: 4A Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: NCP1380 Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP1595AGEVB | onsemi |
Description: EVAL BOARD FOR NCP1595A Packaging: Box Voltage - Output: 1.8V Voltage - Input: 4V ~ 5.5V Current - Output: 1.5A Contents: Board(s) Frequency - Switching: 1MHz Regulator Topology: Buck Utilized IC / Part: NCP1595A Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NCP1650EVB | onsemi |
Description: BOARD EVAL NCP1650 PFC CTLR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NCP3063SMDINVEVB | onsemi |
Description: EVAL BOARD FOR NCP3063Packaging: Box Voltage - Output: -12V Voltage - Input: 5V Current - Output: 100mA Regulator Topology: Inverting Board Type: Fully Populated Utilized IC / Part: NCP3063 Supplied Contents: Board(s) Main Purpose: DC/DC, Negative Inverter Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP3163BUCKGEVB | onsemi |
Description: BOARD EVAL NCP3163 DC-DC CONV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP3170BGEVB | onsemi |
Description: EVAL BOARD FOR NCP3170B Packaging: Box Voltage - Output: 3.3V Voltage - Input: 5V ~ 18V Current - Output: 3A Frequency - Switching: 1MHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: NCP3170B Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380HMU05AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP380HMU10AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP380 Secondary Attributes: Thermal Shutdown Circuit Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380HMU15AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP380 Secondary Attributes: Thermal Shutdown Circuit Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380HMU20AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP380 Secondary Attributes: Thermal Shutdown Circuit Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380HMUAJAGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP380 Secondary Attributes: Thermal Shutdown Circuit Embedded: No |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP380HSN05AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP380HSN10AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP380 Secondary Attributes: Thermal Shutdown Circuit Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380HSNAJAGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380LMU15AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: NCP380 Secondary Attributes: Thermal Shutdown Circuit Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380LMUAJAGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380LSN05AGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380LSN10AGEVB | onsemi |
Description: BOARD EVAL NCP380LSN10 LOAD SW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380LSNAJAGEVB | onsemi |
Description: EVAL BOARD FOR NCP380Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| NIS6111EVB | onsemi |
Description: EVAL BOARD FOR NIS6111Packaging: Box Function: ORing Controller / High Side Type: Power Management Contents: Board(s) Utilized IC / Part: NIS6111 Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NV890201MWTXGEVB | onsemi |
Description: EVAL BOARD FOR NV890201Packaging: Box Voltage - Output: 3.3V Voltage - Input: 4.5V ~ 36V Current - Output: 2A Contents: Board(s) Frequency - Switching: 2MHz Regulator Topology: Buck Utilized IC / Part: NV890201 Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3120SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 176758 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3120SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: IEC, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM121AR2 | onsemi |
Description: OPTOISO 3.75KV 1CH TRANS 4-SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 11019 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM124R2V | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 14394 Stücke: Lieferzeit 10-14 Tag (e) |
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HMHA281R2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATPackaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 50560 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC205R2VM | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 80% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 42564 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC213R2M | onsemi |
Description: OPTOISO 2.5KV TRANS W/BASE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 984683 Stücke: Lieferzeit 10-14 Tag (e) |
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MOCD208R2M | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 125% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 271852 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD390N15A | onsemi |
Description: MOSFET N-CH 150V 26A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V |
auf Bestellung 9870 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86252 | onsemi |
Description: MOSFET N-CH 150V 5A/27A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
auf Bestellung 54987 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86520L | onsemi |
Description: MOSFET N-CH 60V 13.5A/22A 8MLPPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V |
auf Bestellung 6635 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8403 | onsemi |
Description: MOSFET 4N-CH 100V 3.1A 12MLPPackaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 20501 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS039N08B | onsemi |
Description: MOSFET N-CH 80V 19.4A/100A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V |
auf Bestellung 7191 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7650DC | onsemi |
Description: MOSFET N-CH 30V 47A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V |
auf Bestellung 5111 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86300 | onsemi |
Description: MOSFET N-CH 80V 19A/80A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3547 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86256 | onsemi |
Description: MOSFET N-CH 150V 1.2A/3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN5346S20X | onsemi |
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN5346S30X | onsemi |
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDC8602 | onsemi |
Description: MOSFET 2N-CH 100V 1.2A SSOT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 690mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 7167 Stücke: Lieferzeit 10-14 Tag (e) |
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FQNL2N50BTA | onsemi |
Description: MOSFET N-CH 500V 350MA TO92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KSA928AYTA | onsemi |
Description: TRANS PNP 30V 2A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
auf Bestellung 3148 Stücke: Lieferzeit 10-14 Tag (e) |
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SSN1N45BTA | onsemi |
Description: MOSFET N-CH 450V 500MA TO92-3 |
auf Bestellung 1398 Stücke: Lieferzeit 10-14 Tag (e) |
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74ACT08MTCX | onsemi |
Description: IC GATE AND 4CH 2-INP 14TSSOPPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 3702 Stücke: Lieferzeit 10-14 Tag (e) |
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74ACT240MTCX | onsemi |
Description: IC BUFF INVERT 5.5V 20TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
auf Bestellung 13927 Stücke: Lieferzeit 10-14 Tag (e) |
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74LCX573MTCX | onsemi |
Description: IC LATCH OCT LV 5V I/O 20TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74VHC541MTCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 4833 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN6300AMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Open Loop, Over Voltage Voltage - Start Up: 16 V Part Status: Last Time Buy |
auf Bestellung 9584 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8880 | onsemi |
Description: MOSFET N-CH 30V 13A/58A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V |
auf Bestellung 10498 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | onsemi |
Description: MOSFET N-CH 30V 17A/94A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
auf Bestellung 18317 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC2514SDC | onsemi |
Description: MOSFET N-CH 25V 24A/40A DLCOOL33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMC3020DC | onsemi |
Description: MOSFET N-CH 30V 17A/40A DLCOOL33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Dual Cool ™ 33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS7698 | onsemi |
Description: MOSFET N-CH 30V 13.5A/22A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V |
auf Bestellung 10119 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS2582 | onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V |
auf Bestellung 5466 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86106LZ | onsemi |
Description: MOSFET N-CH 100V 3.2A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
auf Bestellung 5999 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB44N10TM | onsemi |
Description: MOSFET N-CH 100V 43.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 20262 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB7P20TM-F085 | onsemi |
Description: MOSFET P-CH 200V 7.3A D2PAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST3257MTCX | onsemi |
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Obsolete |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HUF75639S3ST | onsemi |
Description: MOSFET N-CH 100V 56A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP1337ADAPEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP1337
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 5A
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1337
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 60W
Contents: Board(s)
Description: EVAL BOARD FOR NCP1337
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 265 VAC
Current - Output: 5A
Frequency - Switching: 130kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1337
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Obsolete
Power - Output: 60W
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1380DGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP1380
Packaging: Box
Voltage - Output: 19V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 4A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1380
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR NCP1380
Packaging: Box
Voltage - Output: 19V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 4A
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: NCP1380
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1595AGEVB |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1595A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 4V ~ 5.5V
Current - Output: 1.5A
Contents: Board(s)
Frequency - Switching: 1MHz
Regulator Topology: Buck
Utilized IC / Part: NCP1595A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR NCP1595A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 4V ~ 5.5V
Current - Output: 1.5A
Contents: Board(s)
Frequency - Switching: 1MHz
Regulator Topology: Buck
Utilized IC / Part: NCP1595A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1650EVB |
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Hersteller: onsemi
Description: BOARD EVAL NCP1650 PFC CTLR
Description: BOARD EVAL NCP1650 PFC CTLR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3063SMDINVEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP3063
Packaging: Box
Voltage - Output: -12V
Voltage - Input: 5V
Current - Output: 100mA
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: NCP3063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR NCP3063
Packaging: Box
Voltage - Output: -12V
Voltage - Input: 5V
Current - Output: 100mA
Regulator Topology: Inverting
Board Type: Fully Populated
Utilized IC / Part: NCP3063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Negative Inverter
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3163BUCKGEVB |
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Hersteller: onsemi
Description: BOARD EVAL NCP3163 DC-DC CONV
Description: BOARD EVAL NCP3163 DC-DC CONV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP3170BGEVB |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP3170B
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 5V ~ 18V
Current - Output: 3A
Frequency - Switching: 1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP3170B
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR NCP3170B
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 5V ~ 18V
Current - Output: 3A
Frequency - Switching: 1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: NCP3170B
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU05AGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 83.62 EUR |
| NCP380HMU10AGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU15AGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMU20AGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HMUAJAGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 164.16 EUR |
| NCP380HSN05AGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 78.92 EUR |
| NCP380HSN10AGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380HSNAJAGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LMU15AGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP380
Secondary Attributes: Thermal Shutdown Circuit
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LMUAJAGEVB |
![]() |
Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LSN05AGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LSN10AGEVB |
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Hersteller: onsemi
Description: BOARD EVAL NCP380LSN10 LOAD SW
Description: BOARD EVAL NCP380LSN10 LOAD SW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP380LSNAJAGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 83.62 EUR |
| NIS6111EVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NIS6111
Packaging: Box
Function: ORing Controller / High Side
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NIS6111
Embedded: No
Description: EVAL BOARD FOR NIS6111
Packaging: Box
Function: ORing Controller / High Side
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NIS6111
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NV890201MWTXGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NV890201
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4.5V ~ 36V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 2MHz
Regulator Topology: Buck
Utilized IC / Part: NV890201
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR NV890201
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4.5V ~ 36V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 2MHz
Regulator Topology: Buck
Utilized IC / Part: NV890201
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 172.6 EUR |
| FOD3120SD |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 176758 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.73 EUR |
| 10+ | 2.7 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.81 EUR |
| FOD3120SDV |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.5 EUR |
| FODM121AR2 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 11019 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 26+ | 0.68 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.38 EUR |
| FODM124R2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 14394 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.27 EUR |
| 24+ | 0.75 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| HMHA281R2 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 50560 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 23+ | 0.78 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.44 EUR |
| MOC205R2VM |
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Hersteller: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 80% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 80% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 42564 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.09 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.43 EUR |
| MOC213R2M |
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Hersteller: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 984683 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.39 EUR |
| MOCD208R2M |
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Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 271852 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 18+ | 0.98 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.57 EUR |
| FDD390N15A |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.2 EUR |
| 12+ | 1.54 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.92 EUR |
| FDD86252 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
auf Bestellung 54987 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 16+ | 1.11 EUR |
| 100+ | 1.04 EUR |
| FDMC86520L |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
auf Bestellung 6635 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.7 EUR |
| FDMQ8403 |
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Hersteller: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 20501 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.55 EUR |
| 10+ | 4.33 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.81 EUR |
| FDMS039N08B |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
auf Bestellung 7191 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.28 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.74 EUR |
| FDMS7650DC |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
auf Bestellung 5111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.16 EUR |
| 10+ | 3.38 EUR |
| 100+ | 2.35 EUR |
| 500+ | 2.04 EUR |
| FDMS86300 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
auf Bestellung 3547 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.84 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |
| FDT86256 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.82 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.21 EUR |
| FAN5346S20X |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN5346S30X |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC8602 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 7167 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.17 EUR |
| 10+ | 2.03 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.04 EUR |
| FQNL2N50BTA |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA928AYTA |
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Hersteller: onsemi
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 3148 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 33+ | 0.54 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| SSN1N45BTA |
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Hersteller: onsemi
Description: MOSFET N-CH 450V 500MA TO92-3
Description: MOSFET N-CH 450V 500MA TO92-3
auf Bestellung 1398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.6 EUR |
| 13+ | 1.41 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.69 EUR |
| 74ACT08MTCX |
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Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 3702 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 48+ | 0.37 EUR |
| 54+ | 0.33 EUR |
| 100+ | 0.29 EUR |
| 250+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.24 EUR |
| 74ACT240MTCX |
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Hersteller: onsemi
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 13927 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 19+ | 0.95 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.75 EUR |
| 250+ | 0.7 EUR |
| 500+ | 0.67 EUR |
| 74LCX573MTCX |
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Hersteller: onsemi
Description: IC LATCH OCT LV 5V I/O 20TSSOP
Description: IC LATCH OCT LV 5V I/O 20TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC541MTCX |
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Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 4833 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.13 EUR |
| 22+ | 0.8 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.63 EUR |
| 250+ | 0.59 EUR |
| 500+ | 0.56 EUR |
| FAN6300AMY |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
auf Bestellung 9584 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 18+ | 1.03 EUR |
| 25+ | 0.93 EUR |
| 100+ | 0.82 EUR |
| 250+ | 0.77 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.71 EUR |
| FDD8880 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
auf Bestellung 10498 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 15+ | 1.26 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
| FDD8896 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 18317 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 13+ | 1.43 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |
| FDMC2514SDC |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC3020DC |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7698 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
auf Bestellung 10119 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 17+ | 1.06 EUR |
| 100+ | 0.73 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.52 EUR |
| FDS2582 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
auf Bestellung 5466 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.95 EUR |
| FDT86106LZ |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
auf Bestellung 5999 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.95 EUR |
| FQB44N10TM |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 20262 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.77 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.15 EUR |
| FQB7P20TM-F085 |
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Hersteller: onsemi
Description: MOSFET P-CH 200V 7.3A D2PAK
Description: MOSFET P-CH 200V 7.3A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST3257MTCX |
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Hersteller: onsemi
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| HUF75639S3ST |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.24 EUR |
| 10+ | 3.42 EUR |
| 100+ | 2.38 EUR |



























