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NOIL1SN3000A-GDC onsemi noil1sn3000a-d.pdf Description: IC IMAGE SENSOR LUPA3000 369PGA
Packaging: Tray
Package / Case: 369-BFCPGA
Type: CMOS
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 8µm x 8µm
Active Pixel Array: 1696H x 1710V
Supplier Device Package: 369-µPGA (31x27)
Frames per Second: 485.0
Produkt ist nicht verfügbar
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NOIL2SC1300A-GDC NOIL2SC1300A-GDC onsemi noil2sm1300a-d.pdf Description: IC IMAGE SENSOR LUPA1300 168PGA
Packaging: Tray
Package / Case: 168-CPGA
Type: CMOS
Operating Temperature: -50°C ~ 85°C (TJ)
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 14µm x 5.2µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 168-PGA
Frames per Second: 30.0
Produkt ist nicht verfügbar
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NOIS1SM0250A-HHC NOIS1SM0250A-HHC onsemi nois1sm0250a-d.pdf Description: IC IMAGE SENSOR STAR250 84JLCC
Packaging: Tray
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Pixel Size: 25µm x 25µm
Active Pixel Array: 512H x 512V
Supplier Device Package: 84-JLCC (26.8x26.8)
Frames per Second: 30.0
Produkt ist nicht verfügbar
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NOIV1SE025KA-GDC NOIV1SE025KA-GDC onsemi NOIV1SN025KA.pdf Description: IC IMAGE SENSOR 25MP 355PGA
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NOIV1SE2000A-QDC NOIV1SE2000A-QDC onsemi noiv1sn2000a-d.pdf Description: IC IMAGE SENSOR 2.3MP 52LLC
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NOIV1SN025KA-GDC NOIV1SN025KA-GDC onsemi NOIV1SN025KA.pdf Description: IC IMAGE SENSOR 25MP 355PGA
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NOIV1SN2000A-QDC NOIV1SN2000A-QDC onsemi noiv1sn2000a-d.pdf Description: IC IMAGE SENSOR 2.3MP 52LLC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Operating Temperature: 0°C ~ 70°C (TJ)
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 52-PLCC
Frames per Second: 92
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NOIV2SE1300A-QDC NOIV2SE1300A-QDC onsemi noiv1sn1300a-d.pdf Description: IC IMAGE SENSOR 1.3MP 48LLC
Packaging: Tray
Package / Case: 168-CPGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 168-PGA
Frames per Second: 150.0
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NTMD5838NLR2G NTMD5838NLR2G onsemi ntmd5838nl-d.pdf Description: MOSFET 2N-CH 40V 7.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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NTP5863NG NTP5863NG onsemi ntp5863n-d.pdf Description: MOSFET N-CH 60V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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NTP5864NG NTP5864NG onsemi ntp5864n-d.pdf Description: MOSFET N-CH 60V 63A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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NVMFD5877NLT1G NVMFD5877NLT1G onsemi nvmfd5877nl-d.pdf Description: MOSFET 2N-CH 60V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVTFS5116PLTAG NVTFS5116PLTAG onsemi nvtfs5116pl-d.pdf Description: MOSFET P-CH 60V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.64 EUR
3000+0.57 EUR
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RD2006LS-SB5 onsemi RD2006LS-SB5.pdf Description: DIODE STANDARD 20A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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SCH1335-TL-H SCH1335-TL-H onsemi Description: MOSFET P-CH 12V 2.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 6 V
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SCH1430-TL-H SCH1430-TL-H onsemi sch1430-d.pdf Description: MOSFET N-CH 20V 2A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V
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SCH1434-TL-H SCH1434-TL-H onsemi Description: MOSFET N-CH 30V 2A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
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SCH1435-TL-W SCH1435-TL-W onsemi Description: MOSFET N-CH 30V 3A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V
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SCH1439-TL-H SCH1439-TL-H onsemi SCH1439.pdf Description: MOSFET N-CH 30V 3.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
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SFT1341-TL-W SFT1341-TL-W onsemi SFT1341-D.PDF Description: MOSFET P-CH 40V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
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SFT1342-TL-W SFT1342-TL-W onsemi sft1342-d.pdf Description: MOSFET P-CH 60V 12A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V
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SFT1350-TL-H SFT1350-TL-H onsemi SFT1350.pdf Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
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SFT1431-TL-E SFT1431-TL-E onsemi SFT1431.pdf Description: MOSFET N-CH 35V 11A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Supplier Device Package: TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
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SMA3101-TL-E SMA3101-TL-E onsemi ena1431a-d.pdf Description: IC RF AMP GPS 100MHZ-3GHZ 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 25.5dB
Current - Supply: 10mA
Noise Figure: 4dB
P1dB: -4dBm
Test Frequency: 2.2GHz
Supplier Device Package: 6-MCPH
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SMA3103-TL-E SMA3103-TL-E onsemi sma3103-d.pdf Description: IC RF AMP GPS 0HZ-2.2GHZ 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 27dB
Current - Supply: 19mA
Noise Figure: 4.7dB
P1dB: 5.7dBm
Test Frequency: 2.2GHz
Supplier Device Package: 6-MCPH
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SMA3107-TL-E SMA3107-TL-E onsemi sma3107-d.pdf Description: IC RF AMP GPS 0HZ-2.8GHZ 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.8GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3.3V
Gain: 24.5dB
Current - Supply: 6mA
Noise Figure: 3.6dB
P1dB: -9.5dBm
Test Frequency: 2.2GHz
Supplier Device Package: 6-MCPH
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SMP3003-DL-E SMP3003-DL-E onsemi Description: MOSFET P-CH 75V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
Produkt ist nicht verfügbar
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SMUN2113T1G SMUN2113T1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TF202THC-3-TL-H TF202THC-3-TL-H onsemi Description: JFET N-CH 1MA 3VTFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
Produkt ist nicht verfügbar
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TF202THC-4-TL-H TF202THC-4-TL-H onsemi Description: JFET N-CH 1MA 3VTFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
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TF202THC-5-TL-H TF202THC-5-TL-H onsemi Description: JFET N-CH 1MA 3VTFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
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TF252-5-TL-H onsemi ena0841-d.pdf Description: JFET N-CH 1MA 3USFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-USFP
Power - Max: 30 mW
Voltage - Cutoff (VGS off) @ Id: 100 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 2 V
Produkt ist nicht verfügbar
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TIG056BF TIG056BF onsemi Description: IGBT 400V 30W TO220
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 240A
Supplier Device Package: TO-220FI(LS)
Td (on/off) @ 25°C: 46ns/140ns
Test Condition: 320V, 240A, 10Ohm, 15V
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 30 W
Produkt ist nicht verfügbar
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TIG110BF TIG110BF onsemi Description: IGBT NPT 600V 27A TO-220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FI(LS)
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/250ns
Test Condition: 300V, 15A, 30Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIG111BF TIG111BF onsemi Description: IGBT 600V 23A 2W TO220
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220FI(LS)
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/175ns
Test Condition: 300V, 10A, 30Ohm, 15V
Gate Charge: 63 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 2 W
Produkt ist nicht verfügbar
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UD1006LS-SB5 onsemi Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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FDMS3600S FDMS3600S onsemi FAIR-S-A0002363784-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 25V 15A/30A 8PQFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.53 EUR
Mindestbestellmenge: 3000
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12A02CH-TL-E 12A02CH-TL-E onsemi en7482-d.pdf Description: TRANS PNP 12V 1A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 20mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 450MHz
Supplier Device Package: 3-CPH
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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12A02MH-TL-E 12A02MH-TL-E onsemi enn7483-d.pdf Description: TRANS PNP 12V 1A MCPH3
auf Bestellung 6000 Stücke:
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15C01M-TL-E 15C01M-TL-E onsemi 15c01m-d.pdf Description: TRANS NPN 15V 0.7A SC70/MCP3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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15GN03FA-TL-H 15GN03FA-TL-H onsemi ena1107-d.pdf Description: TRANS NPN VHF-UHF 70A 10V SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Produkt ist nicht verfügbar
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2SA1179N6-TB-E 2SA1179N6-TB-E onsemi en7198-d.pdf Description: TRANS PNP 50V 0.15A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SA1416S-TD-E 2SA1416S-TD-E onsemi 2sa1416-d.pdf Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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1000+0.36 EUR
Mindestbestellmenge: 1000
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2SA1416T-TD-E 2SA1416T-TD-E onsemi 2sa1416-d.pdf Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
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1000+0.36 EUR
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2SA1417S-TD-E 2SA1417S-TD-E onsemi EN2006-D.html Description: TRANS PNP 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
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1000+0.45 EUR
2000+0.41 EUR
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2SA1417T-TD-E 2SA1417T-TD-E onsemi EN2006-D.html Description: TRANS PNP 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.45 EUR
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2SA1418S-TD-E 2SA1418S-TD-E onsemi en1788-d.pdf Description: TRANS PNP 160V 0.7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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1000+0.44 EUR
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2SA1419S-TD-E 2SA1419S-TD-E onsemi en2007-d.pdf Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
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2000+0.39 EUR
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2SA1419T-TD-E 2SA1419T-TD-E onsemi Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SA1507S 2SA1507S onsemi 2SA1507%2C2SC3902.pdf Description: TRANS PNP 160V 1.5A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SA1552S-TL-H 2SA1552S-TL-H onsemi en2262-d.pdf Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA1705S-AN 2SA1705S-AN onsemi 2SA1705.pdf Description: TRANS PNP 50V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SA1706S-AN 2SA1706S-AN onsemi 2SA1706.pdf Description: TRANS PNP 50V 2A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA1768S-AN 2SA1768S-AN onsemi 2SA1768.pdf Description: TRANS PNP 160V 0.7A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2012-TD-E 2SA2012-TD-E onsemi 2sa2012-d.pdf Description: TRANS PNP 30V 5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3.5 W
Produkt ist nicht verfügbar
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2SA2013-TD-E 2SA2013-TD-E onsemi en6307-d.pdf Description: TRANS PNP 50V 4A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
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1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 1000
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2SA2016-TD-E 2SA2016-TD-E onsemi en6309-d.pdf Description: TRANS PNP 50V 7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 5000 Stücke:
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1000+0.52 EUR
2000+0.48 EUR
3000+0.45 EUR
5000+0.43 EUR
Mindestbestellmenge: 1000
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2SA2039-TL-E 2SA2039-TL-E onsemi en6912-d.pdf Description: TRANS PNP 50V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 61600 Stücke:
Lieferzeit 10-14 Tag (e)
700+0.68 EUR
1400+0.62 EUR
2100+0.59 EUR
3500+0.56 EUR
4900+0.54 EUR
7000+0.52 EUR
17500+0.5 EUR
Mindestbestellmenge: 700
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2SA2040-E 2SA2040-E onsemi en6913-d.pdf Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2040-TL-E 2SA2040-TL-E onsemi en6913-d.pdf Description: TRANS PNP 50V 8A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
700+0.73 EUR
1400+0.66 EUR
2100+0.63 EUR
3500+0.6 EUR
4900+0.58 EUR
Mindestbestellmenge: 700
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NOIL1SN3000A-GDC noil1sn3000a-d.pdf
Hersteller: onsemi
Description: IC IMAGE SENSOR LUPA3000 369PGA
Packaging: Tray
Package / Case: 369-BFCPGA
Type: CMOS
Operating Temperature: 0°C ~ 60°C
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 8µm x 8µm
Active Pixel Array: 1696H x 1710V
Supplier Device Package: 369-µPGA (31x27)
Frames per Second: 485.0
Produkt ist nicht verfügbar
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NOIL2SC1300A-GDC noil2sm1300a-d.pdf
NOIL2SC1300A-GDC
Hersteller: onsemi
Description: IC IMAGE SENSOR LUPA1300 168PGA
Packaging: Tray
Package / Case: 168-CPGA
Type: CMOS
Operating Temperature: -50°C ~ 85°C (TJ)
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 14µm x 5.2µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 168-PGA
Frames per Second: 30.0
Produkt ist nicht verfügbar
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NOIS1SM0250A-HHC nois1sm0250a-d.pdf
NOIS1SM0250A-HHC
Hersteller: onsemi
Description: IC IMAGE SENSOR STAR250 84JLCC
Packaging: Tray
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Pixel Size: 25µm x 25µm
Active Pixel Array: 512H x 512V
Supplier Device Package: 84-JLCC (26.8x26.8)
Frames per Second: 30.0
Produkt ist nicht verfügbar
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NOIV1SE025KA-GDC NOIV1SN025KA.pdf
NOIV1SE025KA-GDC
Hersteller: onsemi
Description: IC IMAGE SENSOR 25MP 355PGA
Produkt ist nicht verfügbar
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NOIV1SE2000A-QDC noiv1sn2000a-d.pdf
NOIV1SE2000A-QDC
Hersteller: onsemi
Description: IC IMAGE SENSOR 2.3MP 52LLC
Produkt ist nicht verfügbar
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NOIV1SN025KA-GDC NOIV1SN025KA.pdf
NOIV1SN025KA-GDC
Hersteller: onsemi
Description: IC IMAGE SENSOR 25MP 355PGA
Produkt ist nicht verfügbar
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NOIV1SN2000A-QDC noiv1sn2000a-d.pdf
NOIV1SN2000A-QDC
Hersteller: onsemi
Description: IC IMAGE SENSOR 2.3MP 52LLC
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Operating Temperature: 0°C ~ 70°C (TJ)
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 52-PLCC
Frames per Second: 92
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NOIV2SE1300A-QDC noiv1sn1300a-d.pdf
NOIV2SE1300A-QDC
Hersteller: onsemi
Description: IC IMAGE SENSOR 1.3MP 48LLC
Packaging: Tray
Package / Case: 168-CPGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V, 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 168-PGA
Frames per Second: 150.0
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NTMD5838NLR2G ntmd5838nl-d.pdf
NTMD5838NLR2G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 7.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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NTP5863NG ntp5863n-d.pdf
NTP5863NG
Hersteller: onsemi
Description: MOSFET N-CH 60V 97A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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NTP5864NG ntp5864n-d.pdf
NTP5864NG
Hersteller: onsemi
Description: MOSFET N-CH 60V 63A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Produkt ist nicht verfügbar
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NVMFD5877NLT1G nvmfd5877nl-d.pdf
NVMFD5877NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
Rds On (Max) @ Id, Vgs: 39mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFS5116PLTAG nvtfs5116pl-d.pdf
NVTFS5116PLTAG
Hersteller: onsemi
Description: MOSFET P-CH 60V 6A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.64 EUR
3000+0.57 EUR
Mindestbestellmenge: 1500
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RD2006LS-SB5 RD2006LS-SB5.pdf
Hersteller: onsemi
Description: DIODE STANDARD 20A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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SCH1335-TL-H
SCH1335-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 6 V
Produkt ist nicht verfügbar
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SCH1430-TL-H sch1430-d.pdf
SCH1430-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 20V 2A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V
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SCH1434-TL-H
SCH1434-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 2A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Produkt ist nicht verfügbar
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SCH1435-TL-W
SCH1435-TL-W
Hersteller: onsemi
Description: MOSFET N-CH 30V 3A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V
Produkt ist nicht verfügbar
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SCH1439-TL-H SCH1439.pdf
SCH1439-TL-H
Hersteller: onsemi
Description: MOSFET N-CH 30V 3.5A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
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SFT1341-TL-W SFT1341-D.PDF
SFT1341-TL-W
Hersteller: onsemi
Description: MOSFET P-CH 40V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 5A, 4.5V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
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SFT1342-TL-W sft1342-d.pdf
SFT1342-TL-W
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 6A, 10V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 20 V
Produkt ist nicht verfügbar
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SFT1350-TL-H SFT1350.pdf
SFT1350-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 40V 19A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 9.5A, 10V
Power Dissipation (Max): 1W (Ta), 23W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 20 V
Produkt ist nicht verfügbar
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SFT1431-TL-E SFT1431.pdf
SFT1431-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 35V 11A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 15W (Tc)
Supplier Device Package: TP-FA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 20 V
Produkt ist nicht verfügbar
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SMA3101-TL-E ena1431a-d.pdf
SMA3101-TL-E
Hersteller: onsemi
Description: IC RF AMP GPS 100MHZ-3GHZ 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Frequency: 100MHz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 25.5dB
Current - Supply: 10mA
Noise Figure: 4dB
P1dB: -4dBm
Test Frequency: 2.2GHz
Supplier Device Package: 6-MCPH
Produkt ist nicht verfügbar
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SMA3103-TL-E sma3103-d.pdf
SMA3103-TL-E
Hersteller: onsemi
Description: IC RF AMP GPS 0HZ-2.2GHZ 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.2GHz
RF Type: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Gain: 27dB
Current - Supply: 19mA
Noise Figure: 4.7dB
P1dB: 5.7dBm
Test Frequency: 2.2GHz
Supplier Device Package: 6-MCPH
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3000
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SMA3107-TL-E sma3107-d.pdf
SMA3107-TL-E
Hersteller: onsemi
Description: IC RF AMP GPS 0HZ-2.8GHZ 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.8GHz
RF Type: General Purpose
Voltage - Supply: 2.7V ~ 3.3V
Gain: 24.5dB
Current - Supply: 6mA
Noise Figure: 3.6dB
P1dB: -9.5dBm
Test Frequency: 2.2GHz
Supplier Device Package: 6-MCPH
Produkt ist nicht verfügbar
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SMP3003-DL-E
SMP3003-DL-E
Hersteller: onsemi
Description: MOSFET P-CH 75V 100A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 90W (Tc)
Supplier Device Package: SMP-FD
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 20 V
Produkt ist nicht verfügbar
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SMUN2113T1G dta144e-d.pdf
SMUN2113T1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TF202THC-3-TL-H
TF202THC-3-TL-H
Hersteller: onsemi
Description: JFET N-CH 1MA 3VTFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
Produkt ist nicht verfügbar
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TF202THC-4-TL-H
TF202THC-4-TL-H
Hersteller: onsemi
Description: JFET N-CH 1MA 3VTFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Part Status: Obsolete
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
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TF202THC-5-TL-H
TF202THC-5-TL-H
Hersteller: onsemi
Description: JFET N-CH 1MA 3VTFP
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 5 V
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TF252-5-TL-H ena0841-d.pdf
Hersteller: onsemi
Description: JFET N-CH 1MA 3USFP
Packaging: Tape & Reel (TR)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-USFP
Power - Max: 30 mW
Voltage - Cutoff (VGS off) @ Id: 100 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 2 V
Produkt ist nicht verfügbar
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TIG056BF
TIG056BF
Hersteller: onsemi
Description: IGBT 400V 30W TO220
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 240A
Supplier Device Package: TO-220FI(LS)
Td (on/off) @ 25°C: 46ns/140ns
Test Condition: 320V, 240A, 10Ohm, 15V
Part Status: Obsolete
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 30 W
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TIG110BF
TIG110BF
Hersteller: onsemi
Description: IGBT NPT 600V 27A TO-220FI
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FI(LS)
IGBT Type: NPT
Td (on/off) @ 25°C: 65ns/250ns
Test Condition: 300V, 15A, 30Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 2 W
Produkt ist nicht verfügbar
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TIG111BF
TIG111BF
Hersteller: onsemi
Description: IGBT 600V 23A 2W TO220
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-220FI(LS)
IGBT Type: NPT
Td (on/off) @ 25°C: 43ns/175ns
Test Condition: 300V, 10A, 30Ohm, 15V
Gate Charge: 63 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 2 W
Produkt ist nicht verfügbar
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UD1006LS-SB5
Hersteller: onsemi
Description: DIODE STANDARD 10A TO220FISB
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220FI(LS)-SB
Operating Temperature - Junction: 150°C (Max)
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Produkt ist nicht verfügbar
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FDMS3600S FAIR-S-A0002363784-1.pdf?t.download=true&u=5oefqw
FDMS3600S
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 15A/30A 8PQFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.53 EUR
Mindestbestellmenge: 3000
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12A02CH-TL-E en7482-d.pdf
12A02CH-TL-E
Hersteller: onsemi
Description: TRANS PNP 12V 1A 3CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 240mV @ 20mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 450MHz
Supplier Device Package: 3-CPH
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 700 mW
Produkt ist nicht verfügbar
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12A02MH-TL-E enn7483-d.pdf
12A02MH-TL-E
Hersteller: onsemi
Description: TRANS PNP 12V 1A MCPH3
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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15C01M-TL-E 15c01m-d.pdf
15C01M-TL-E
Hersteller: onsemi
Description: TRANS NPN 15V 0.7A SC70/MCP3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: SC-70 / MCP3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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15GN03FA-TL-H ena1107-d.pdf
15GN03FA-TL-H
Hersteller: onsemi
Description: TRANS NPN VHF-UHF 70A 10V SSFP
Packaging: Tape & Reel (TR)
Package / Case: SC-81
Mounting Type: Surface Mount
Supplier Device Package: 3-SSFP
Produkt ist nicht verfügbar
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2SA1179N6-TB-E en7198-d.pdf
2SA1179N6-TB-E
Hersteller: onsemi
Description: TRANS PNP 50V 0.15A 3-CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: 3-CP
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
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2SA1416S-TD-E 2sa1416-d.pdf
2SA1416S-TD-E
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.36 EUR
Mindestbestellmenge: 1000
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2SA1416T-TD-E 2sa1416-d.pdf
2SA1416T-TD-E
Hersteller: onsemi
Description: TRANS PNP 100V 1A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.36 EUR
Mindestbestellmenge: 1000
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2SA1417S-TD-E EN2006-D.html
2SA1417S-TD-E
Hersteller: onsemi
Description: TRANS PNP 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 1000
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2SA1417T-TD-E EN2006-D.html
2SA1417T-TD-E
Hersteller: onsemi
Description: TRANS PNP 100V 2A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.45 EUR
Mindestbestellmenge: 1000
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2SA1418S-TD-E en1788-d.pdf
2SA1418S-TD-E
Hersteller: onsemi
Description: TRANS PNP 160V 0.7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.44 EUR
Mindestbestellmenge: 1000
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2SA1419S-TD-E en2007-d.pdf
2SA1419S-TD-E
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.43 EUR
2000+0.39 EUR
3000+0.37 EUR
Mindestbestellmenge: 1000
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2SA1419T-TD-E
2SA1419T-TD-E
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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2SA1507S 2SA1507%2C2SC3902.pdf
2SA1507S
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A TO126ML
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-126ML
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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2SA1552S-TL-H en2262-d.pdf
2SA1552S-TL-H
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA1705S-AN 2SA1705.pdf
2SA1705S-AN
Hersteller: onsemi
Description: TRANS PNP 50V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
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2SA1706S-AN 2SA1706.pdf
2SA1706S-AN
Hersteller: onsemi
Description: TRANS PNP 50V 2A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA1768S-AN 2SA1768.pdf
2SA1768S-AN
Hersteller: onsemi
Description: TRANS PNP 160V 0.7A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 25mA, 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2012-TD-E 2sa2012-d.pdf
2SA2012-TD-E
Hersteller: onsemi
Description: TRANS PNP 30V 5A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 3.5 W
Produkt ist nicht verfügbar
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2SA2013-TD-E en6307-d.pdf
2SA2013-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 4A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.42 EUR
2000+0.38 EUR
Mindestbestellmenge: 1000
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2SA2016-TD-E en6309-d.pdf
2SA2016-TD-E
Hersteller: onsemi
Description: TRANS PNP 50V 7A PCP
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: PCP
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3.5 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.52 EUR
2000+0.48 EUR
3000+0.45 EUR
5000+0.43 EUR
Mindestbestellmenge: 1000
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2SA2039-TL-E en6912-d.pdf
2SA2039-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 5A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 430mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 360MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
auf Bestellung 61600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
700+0.68 EUR
1400+0.62 EUR
2100+0.59 EUR
3500+0.56 EUR
4900+0.54 EUR
7000+0.52 EUR
17500+0.5 EUR
Mindestbestellmenge: 700
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2SA2040-E en6913-d.pdf
2SA2040-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 330MHz
Supplier Device Package: TP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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2SA2040-TL-E en6913-d.pdf
2SA2040-TL-E
Hersteller: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 290MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
700+0.73 EUR
1400+0.66 EUR
2100+0.63 EUR
3500+0.6 EUR
4900+0.58 EUR
Mindestbestellmenge: 700
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