MJD47TF ON Semiconductor / Fairchild
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details MJD47TF ON Semiconductor / Fairchild
Description: TRANS NPN 250V 1A DPAK, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, Current - Collector Cutoff (Max): 200µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: DPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 250 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD47TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MJD47TF |
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auf Bestellung 25200 Stücke: Lieferzeit 21-28 Tag (e) |
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| MJD47TF | Hersteller : ONSEMI |
Description: ONSEMI - MJD47TF - MJD47TF, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 706 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD47TF | Hersteller : ON Semiconductor |
Trans GP BJT NPN 250V 1A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| MJD47TF | Hersteller : ON Semiconductor |
Trans GP BJT NPN 250V 1A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD47TF | Hersteller : onsemi |
Description: TRANS NPN 250V 1A DPAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 1.56 W |
Produkt ist nicht verfügbar |
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MJD47TF | Hersteller : onsemi |
Description: TRANS NPN 250V 1A DPAK Packaging: Cut Tape (CT) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Frequency - Transition: 10MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 1.56 W |
Produkt ist nicht verfügbar |