FDS2582 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.85 EUR |
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Technische Details FDS2582 onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V.
Weitere Produktangebote FDS2582 nach Preis ab 0.86 EUR bis 3.04 EUR
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FDS2582 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 150V Drain current: 2.6A On-state resistance: 146mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 382 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS2582 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 150V Drain current: 2.6A On-state resistance: 146mΩ Type of transistor: N-MOSFET |
auf Bestellung 382 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS2582 | Hersteller : onsemi / Fairchild |
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auf Bestellung 19193 Stücke: Lieferzeit 576-580 Tag (e) |
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FDS2582 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.1A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V |
auf Bestellung 5466 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS2582 | Hersteller : ON Semiconductor |
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| FDS2582 | Hersteller : Fairchild |
N-MOSFET 150V 4.1A 66mΩ 2.5W FDS2582 Fairchild TFDS2582 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS2582 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS2582 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS2582 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.1A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |