2SC5707-E On Semiconductor
Hersteller: On Semiconductor
Bipolar Transistors - BJT BIP NPN 8A 50V Група товару: Транзистори Од. вим: шт
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Technische Details 2SC5707-E On Semiconductor
Description: TRANS NPN 50V 8A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 330MHz, Supplier Device Package: TP, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1 W.
Weitere Produktangebote 2SC5707-E
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2SC5707-E | Hersteller : onsemi |
Description: TRANS NPN 50V 8A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 240mV @ 175mA, 3.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 330MHz Supplier Device Package: TP Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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2SC5707-E | Hersteller : onsemi |
Bipolar Transistors - BJT BIP NPN 8A 50V |
Produkt ist nicht verfügbar |