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FDPF51N25 FDPF51N25 onsemi fdpf51n25rdtu-d.pdf Description: MOSFET N-CH 250V 51A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4935BZ FDS4935BZ onsemi FAIRS24265-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4470 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.9 EUR
Mindestbestellmenge: 2500
FDZ191P FDZ191P onsemi fdz191p-d.pdf Description: MOSFET P-CH 20V 3A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WLCSP (1x1.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
FGA120N30DTU FGA120N30DTU onsemi FGA120N30D.pdf Description: IGBT 300V 120A 290W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
Supplier Device Package: TO-3P
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 290 W
Produkt ist nicht verfügbar
FGA90N30TU FGA90N30TU onsemi FGA90N30TU.pdf Description: IGBT 300V 90A 219W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 219 W
Produkt ist nicht verfügbar
FHP3430IM14X FHP3430IM14X onsemi FHP3130.pdf Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
FMS6203MTC1400 FMS6203MTC1400 onsemi fms6203-d.pdf Description: IC VIDEO DRIVER 14TSSOP
Produkt ist nicht verfügbar
FSCM0465RGWDTU onsemi FSCM0465R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 70 W
Produkt ist nicht verfügbar
FSCM0465RIWDTU onsemi FSCM0465R.pdf Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 70 W
Produkt ist nicht verfügbar
FSCM0465RJ FSCM0465RJ onsemi FSCM0465R.pdf Description: IC OFFLINE SW FLYBACK D2PAK-6
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: D²PAK-6
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 55 W
Produkt ist nicht verfügbar
FSDH0265RLX FSDH0265RLX onsemi FSDH0265RN,FSDM0265RN.pdf Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 27 W
Produkt ist nicht verfügbar
HGT1S20N60A4S9A HGT1S20N60A4S9A onsemi HGT1S20N60A4S9A.pdf Description: IGBT 600V 70A 290W TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/73ns
Switching Energy: 105µJ (on), 150µJ (off)
Test Condition: 390V, 20A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 290 W
Produkt ist nicht verfügbar
MBR20S100CTTU MBR20S100CTTU onsemi MBR20S100CT.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
FCB11N60FTM FCB11N60FTM onsemi FCB11N60F.pdf Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Produkt ist nicht verfügbar
FCD5N60TF FCD5N60TF onsemi FCU5N60-D.pdf Description: MOSFET N-CH 600V 4.6A DPAK
Produkt ist nicht verfügbar
FCD7N60TF FCD7N60TF onsemi Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
FDMA1028NZ FDMA1028NZ onsemi fdma1028nz-d.pdf Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 17462 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
FDMA1029PZ FDMA1029PZ onsemi fdma1029pz-d.pdf Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 14401 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
15+ 1.76 EUR
100+ 1.22 EUR
500+ 1.02 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 13
FDMA1032CZ FDMA1032CZ onsemi fdma1032cz-d.pdf Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 19257 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.39 EUR
14+ 1.96 EUR
100+ 1.52 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 11
FDMA2002NZ FDMA2002NZ onsemi fdma2002nz-d.pdf Description: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 32156 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.13 EUR
15+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 13
FDS4935BZ FDS4935BZ onsemi FAIRS24265-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.18 EUR
15+ 1.79 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
Mindestbestellmenge: 12
FDZ191P FDZ191P onsemi fdz191p-d.pdf Description: MOSFET P-CH 20V 3A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WLCSP (1x1.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
FHP3430IM14X FHP3430IM14X onsemi FHP3130.pdf Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
FQB5N50CFTM FQB5N50CFTM onsemi FQB5N50CF.pdf Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
ML4425CS ML4425CS onsemi ML4425.pdf Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
FOD814A300W FOD814A300W onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 29046 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.4 EUR
29+ 0.91 EUR
100+ 0.6 EUR
1000+ 0.46 EUR
2000+ 0.42 EUR
5000+ 0.39 EUR
10000+ 0.38 EUR
25000+ 0.37 EUR
Mindestbestellmenge: 19
FOD814AW FOD814AW onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Packaging: Box
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
FOD814A300 FOD814A300 onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2040 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.69 EUR
24+ 1.1 EUR
100+ 0.73 EUR
1000+ 0.56 EUR
2000+ 0.51 EUR
Mindestbestellmenge: 16
FOD814A3S FOD814A3S onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4SMD
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
FOD814AS FOD814AS onsemi fod814-d.pdf Description: OPTOISOLATOR 5KV TRANSISTOR 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2101 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
27+ 0.99 EUR
100+ 0.65 EUR
1000+ 0.5 EUR
2000+ 0.46 EUR
Mindestbestellmenge: 18
FDMC2674 FDMC2674 onsemi fdmc2674-d.pdf Description: MOSFET N-CH 220V 1A/7A 8MLP
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.24 EUR
6000+ 2.15 EUR
Mindestbestellmenge: 3000
ML4425CSX ML4425CSX onsemi ML4425.pdf Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
FDMC2674 FDMC2674 onsemi fdmc2674-d.pdf Description: MOSFET N-CH 220V 1A/7A 8MLP
auf Bestellung 25839 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.89 EUR
10+ 4.39 EUR
100+ 3.53 EUR
500+ 2.9 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 6
ML4425CSX ML4425CSX onsemi ML4425.pdf Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
ESD5Z12T1G ESD5Z12T1G onsemi esd5z2.5t1-d.pdf description Description: TVS DIODE 12VWM 25VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 240W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.069 EUR
6000+ 0.065 EUR
Mindestbestellmenge: 3000
CYIL1SM4000AA-GDC CYIL1SM4000AA-GDC onsemi lupa_4000_8.pdf Description: SENSOR IMAGE 4MP CMOS 127-PGA
Packaging: Tray
Package / Case: 127-BPGA
Type: CMOS
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 12µm x 12µm
Active Pixel Array: 2048H x 2048V
Supplier Device Package: 127-PGA (42x42)
Frames per Second: 15
Produkt ist nicht verfügbar
NCP1027P065G NCP1027P065G onsemi ncp1027-d.pdf description Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 8.5 V
Part Status: Obsolete
Power (Watts): 25 W
Produkt ist nicht verfügbar
NCP1027P100G NCP1027P100G onsemi ncp1027-d.pdf description Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 8.5 V
Part Status: Obsolete
Power (Watts): 25 W
Produkt ist nicht verfügbar
ADP3192JCPZ-RL ADP3192JCPZ-RL onsemi ADP3192.pdf Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VR10, VR11
Supplier Device Package: 40-LFCSP (6x6)
Produkt ist nicht verfügbar
ADP3198JCPZ-RL ADP3198JCPZ-RL onsemi adp3198-d.pdf Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VRM
Supplier Device Package: 40-LFCSP (6x6)
Produkt ist nicht verfügbar
ADP3110AKRZ ADP3110AKRZ onsemi adp3110a-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FCB20N60FTM FCB20N60FTM onsemi fcb20n60f-d.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
FCD4N60TF FCD4N60TF onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Produkt ist nicht verfügbar
FCD4N60TM FCD4N60TM onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.7 EUR
5000+ 1.63 EUR
Mindestbestellmenge: 2500
FDD8580 FDD8580 onsemi FDD, FDU8580.pdf Description: MOSFET N-CH 20V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
Produkt ist nicht verfügbar
FDP61N20 FDP61N20 onsemi fdp61n20-d.pdf Description: MOSFET N-CH 200V 61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
auf Bestellung 258 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 6.04 EUR
100+ 4.86 EUR
Mindestbestellmenge: 4
FDPF16N50T FDPF16N50T onsemi fdpf16n50t-d.pdf Description: MOSFET N-CH 500V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
FDPF20N50T FDPF20N50T onsemi fdpf20n50t-d.pdf Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Produkt ist nicht verfügbar
FDS2672 FDS2672 onsemi FAIRS24204-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.23 EUR
Mindestbestellmenge: 2500
FDS2734 FDS2734 onsemi fds2734-d.pdf Description: MOSFET N-CH 250V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.14 EUR
5000+ 2.06 EUR
Mindestbestellmenge: 2500
FDU8580 FDU8580 onsemi FDD, FDU8580.pdf Description: MOSFET N-CH 20V 35A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
Produkt ist nicht verfügbar
FFPF30U60STTU FFPF30U60STTU onsemi FFPF30U60S.pdf Description: DIODE GEN PURP 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
FQB34N20LTM FQB34N20LTM onsemi fqb34n20l-d.pdf Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
FSCM0565RGTU onsemi FSCM0565R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
Produkt ist nicht verfügbar
FSD200BMX FSD200BMX onsemi FSD200B,FSD210B.pdf Description: IC OFFLINE SWITCH FLYBACK 7LSOP
Packaging: Tube
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 66%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 670V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 10V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 7 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
FCB20N60FTM FCB20N60FTM onsemi fcb20n60f-d.pdf Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 523 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.52 EUR
10+ 11.36 EUR
100+ 9.19 EUR
Mindestbestellmenge: 2
FCD4N60TF FCD4N60TF onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Produkt ist nicht verfügbar
FCD4N60TM FCD4N60TM onsemi fcd4n60-d.pdf Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 10253 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.12 EUR
100+ 2.49 EUR
500+ 2.1 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
FDD8580 FDD8580 onsemi FDD, FDU8580.pdf Description: MOSFET N-CH 20V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
Produkt ist nicht verfügbar
FDS2672 FDS2672 onsemi FAIRS24204-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
auf Bestellung 4640 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.86 EUR
10+ 4.38 EUR
100+ 3.52 EUR
500+ 2.89 EUR
1000+ 2.39 EUR
Mindestbestellmenge: 6
FDPF51N25 fdpf51n25rdtu-d.pdf
FDPF51N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 51A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
FDS4935BZ FAIRS24265-1.pdf?t.download=true&u=5oefqw
FDS4935BZ
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4470 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.9 EUR
Mindestbestellmenge: 2500
FDZ191P fdz191p-d.pdf
FDZ191P
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WLCSP (1x1.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
FGA120N30DTU FGA120N30D.pdf
FGA120N30DTU
Hersteller: onsemi
Description: IGBT 300V 120A 290W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 21 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 25A
Supplier Device Package: TO-3P
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 290 W
Produkt ist nicht verfügbar
FGA90N30TU FGA90N30TU.pdf
FGA90N30TU
Hersteller: onsemi
Description: IGBT 300V 90A 219W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 20A
Supplier Device Package: TO-3P
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 219 W
Produkt ist nicht verfügbar
FHP3430IM14X FHP3130.pdf
FHP3430IM14X
Hersteller: onsemi
Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
FMS6203MTC1400 fms6203-d.pdf
FMS6203MTC1400
Hersteller: onsemi
Description: IC VIDEO DRIVER 14TSSOP
Produkt ist nicht verfügbar
FSCM0465RGWDTU FSCM0465R.pdf
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 70 W
Produkt ist nicht verfügbar
FSCM0465RIWDTU FSCM0465R.pdf
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 70 W
Produkt ist nicht verfügbar
FSCM0465RJ FSCM0465R.pdf
FSCM0465RJ
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK D2PAK-6
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: D²PAK-6
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 55 W
Produkt ist nicht verfügbar
FSDH0265RLX FSDH0265RN,FSDM0265RN.pdf
FSDH0265RLX
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 77%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 27 W
Produkt ist nicht verfügbar
HGT1S20N60A4S9A HGT1S20N60A4S9A.pdf
HGT1S20N60A4S9A
Hersteller: onsemi
Description: IGBT 600V 70A 290W TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/73ns
Switching Energy: 105µJ (on), 150µJ (off)
Test Condition: 390V, 20A, 3Ohm, 15V
Gate Charge: 142 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 290 W
Produkt ist nicht verfügbar
MBR20S100CTTU MBR20S100CT.pdf
MBR20S100CTTU
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
FCB11N60FTM FCB11N60F.pdf
FCB11N60FTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Produkt ist nicht verfügbar
FCD5N60TF FCU5N60-D.pdf
FCD5N60TF
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.6A DPAK
Produkt ist nicht verfügbar
FCD7N60TF
FCD7N60TF
Hersteller: onsemi
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
FDMA1028NZ fdma1028nz-d.pdf
FDMA1028NZ
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 17462 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
15+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 12
FDMA1029PZ fdma1029pz-d.pdf
FDMA1029PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.1A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 14401 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
15+ 1.76 EUR
100+ 1.22 EUR
500+ 1.02 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 13
FDMA1032CZ fdma1032cz-d.pdf
FDMA1032CZ
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3.7A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 3.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 19257 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.39 EUR
14+ 1.96 EUR
100+ 1.52 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 11
FDMA2002NZ fdma2002nz-d.pdf
FDMA2002NZ
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 2.9A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 650mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
auf Bestellung 32156 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.13 EUR
15+ 1.75 EUR
100+ 1.36 EUR
500+ 1.15 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 13
FDS4935BZ FAIRS24265-1.pdf?t.download=true&u=5oefqw
FDS4935BZ
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 4900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.18 EUR
15+ 1.79 EUR
100+ 1.39 EUR
500+ 1.18 EUR
1000+ 0.96 EUR
Mindestbestellmenge: 12
FDZ191P fdz191p-d.pdf
FDZ191P
Hersteller: onsemi
Description: MOSFET P-CH 20V 3A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-WLCSP (1x1.5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
FHP3430IM14X FHP3130.pdf
FHP3430IM14X
Hersteller: onsemi
Description: IC OPAMP VFB 4 CIRCUIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA (x4 Channels)
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Number of Circuits: 4
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Produkt ist nicht verfügbar
FQB5N50CFTM FQB5N50CF.pdf
FQB5N50CFTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
ML4425CS ML4425.pdf
ML4425CS
Hersteller: onsemi
Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
FOD814A300W fod814-d.pdf
FOD814A300W
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 29046 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.4 EUR
29+ 0.91 EUR
100+ 0.6 EUR
1000+ 0.46 EUR
2000+ 0.42 EUR
5000+ 0.39 EUR
10000+ 0.38 EUR
25000+ 0.37 EUR
Mindestbestellmenge: 19
FOD814AW fod814-d.pdf
FOD814AW
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Packaging: Box
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
FOD814A300 fod814-d.pdf
FOD814A300
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-DIP
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2040 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.69 EUR
24+ 1.1 EUR
100+ 0.73 EUR
1000+ 0.56 EUR
2000+ 0.51 EUR
Mindestbestellmenge: 16
FOD814A3S fod814-d.pdf
FOD814A3S
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4SMD
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
FOD814AS fod814-d.pdf
FOD814AS
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRANSISTOR 4SMD
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 105°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 1mA
Vce Saturation (Max): 200mV
Current Transfer Ratio (Max): 150% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 70V
Rise / Fall Time (Typ): 4µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2101 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.51 EUR
27+ 0.99 EUR
100+ 0.65 EUR
1000+ 0.5 EUR
2000+ 0.46 EUR
Mindestbestellmenge: 18
FDMC2674 fdmc2674-d.pdf
FDMC2674
Hersteller: onsemi
Description: MOSFET N-CH 220V 1A/7A 8MLP
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.24 EUR
6000+ 2.15 EUR
Mindestbestellmenge: 3000
ML4425CSX ML4425.pdf
ML4425CSX
Hersteller: onsemi
Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
FDMC2674 fdmc2674-d.pdf
FDMC2674
Hersteller: onsemi
Description: MOSFET N-CH 220V 1A/7A 8MLP
auf Bestellung 25839 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.89 EUR
10+ 4.39 EUR
100+ 3.53 EUR
500+ 2.9 EUR
1000+ 2.4 EUR
Mindestbestellmenge: 6
ML4425CSX ML4425.pdf
ML4425CSX
Hersteller: onsemi
Description: IC MOTOR DRVR 10.8V-13.2V 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: Parallel
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 10.8V ~ 13.2V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: 28-SOIC
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Obsolete
Produkt ist nicht verfügbar
ESD5Z12T1G description esd5z2.5t1-d.pdf
ESD5Z12T1G
Hersteller: onsemi
Description: TVS DIODE 12VWM 25VC SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-523
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 240W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.069 EUR
6000+ 0.065 EUR
Mindestbestellmenge: 3000
CYIL1SM4000AA-GDC lupa_4000_8.pdf
CYIL1SM4000AA-GDC
Hersteller: onsemi
Description: SENSOR IMAGE 4MP CMOS 127-PGA
Packaging: Tray
Package / Case: 127-BPGA
Type: CMOS
Operating Temperature: 0°C ~ 60°C (TA)
Voltage - Supply: 2.5V, 3.3V
Pixel Size: 12µm x 12µm
Active Pixel Array: 2048H x 2048V
Supplier Device Package: 127-PGA (42x42)
Frames per Second: 15
Produkt ist nicht verfügbar
NCP1027P065G description ncp1027-d.pdf
NCP1027P065G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 8.5 V
Part Status: Obsolete
Power (Watts): 25 W
Produkt ist nicht verfügbar
NCP1027P100G description ncp1027-d.pdf
NCP1027P100G
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 8.5 V
Part Status: Obsolete
Power (Watts): 25 W
Produkt ist nicht verfügbar
ADP3192JCPZ-RL ADP3192.pdf
ADP3192JCPZ-RL
Hersteller: onsemi
Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VR10, VR11
Supplier Device Package: 40-LFCSP (6x6)
Produkt ist nicht verfügbar
ADP3198JCPZ-RL adp3198-d.pdf
ADP3198JCPZ-RL
Hersteller: onsemi
Description: IC REG CTRLR INTEL 4OUT 40LFCSP
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 4
Voltage - Input: 12V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel VRM
Supplier Device Package: 40-LFCSP (6x6)
Produkt ist nicht verfügbar
ADP3110AKRZ adp3110a-d.pdf
ADP3110AKRZ
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Voltage - Supply: 4.6V ~ 13.2V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 11ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
FCB20N60FTM fcb20n60f-d.pdf
FCB20N60FTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
FCD4N60TF fcd4n60-d.pdf
FCD4N60TF
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Produkt ist nicht verfügbar
FCD4N60TM fcd4n60-d.pdf
FCD4N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.7 EUR
5000+ 1.63 EUR
Mindestbestellmenge: 2500
FDD8580 FDD, FDU8580.pdf
FDD8580
Hersteller: onsemi
Description: MOSFET N-CH 20V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
Produkt ist nicht verfügbar
FDP61N20 fdp61n20-d.pdf
FDP61N20
Hersteller: onsemi
Description: MOSFET N-CH 200V 61A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
auf Bestellung 258 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 6.04 EUR
100+ 4.86 EUR
Mindestbestellmenge: 4
FDPF16N50T fdpf16n50t-d.pdf
FDPF16N50T
Hersteller: onsemi
Description: MOSFET N-CH 500V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
FDPF20N50T fdpf20n50t-d.pdf
FDPF20N50T
Hersteller: onsemi
Description: MOSFET N-CH 500V 20A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 10A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Produkt ist nicht verfügbar
FDS2672 FAIRS24204-1.pdf?t.download=true&u=5oefqw
FDS2672
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.23 EUR
Mindestbestellmenge: 2500
FDS2734 fds2734-d.pdf
FDS2734
Hersteller: onsemi
Description: MOSFET N-CH 250V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 117mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.14 EUR
5000+ 2.06 EUR
Mindestbestellmenge: 2500
FDU8580 FDD, FDU8580.pdf
FDU8580
Hersteller: onsemi
Description: MOSFET N-CH 20V 35A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
Produkt ist nicht verfügbar
FFPF30U60STTU FFPF30U60S.pdf
FFPF30U60STTU
Hersteller: onsemi
Description: DIODE GEN PURP 600V 30A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
FQB34N20LTM fqb34n20l-d.pdf
FQB34N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
FSCM0565RGTU FSCM0565R.pdf
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
Produkt ist nicht verfügbar
FSD200BMX FSD200B,FSD210B.pdf
FSD200BMX
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7LSOP
Packaging: Tube
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 66%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 670V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6V ~ 10V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 7 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
FCB20N60FTM fcb20n60f-d.pdf
FCB20N60FTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 523 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.52 EUR
10+ 11.36 EUR
100+ 9.19 EUR
Mindestbestellmenge: 2
FCD4N60TF fcd4n60-d.pdf
FCD4N60TF
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Produkt ist nicht verfügbar
FCD4N60TM fcd4n60-d.pdf
FCD4N60TM
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 10253 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.77 EUR
10+ 3.12 EUR
100+ 2.49 EUR
500+ 2.1 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
FDD8580 FDD, FDU8580.pdf
FDD8580
Hersteller: onsemi
Description: MOSFET N-CH 20V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 49.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1445 pF @ 10 V
Produkt ist nicht verfügbar
FDS2672 FAIRS24204-1.pdf?t.download=true&u=5oefqw
FDS2672
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
auf Bestellung 4640 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.86 EUR
10+ 4.38 EUR
100+ 3.52 EUR
500+ 2.89 EUR
1000+ 2.39 EUR
Mindestbestellmenge: 6
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