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HSR412LSR2 onsemi HSR312%28L%29%2C412%28L%29_DS.pdf Description: SSR RELAY SPST-NO 120MA 0-400V
Voltage - Load: 0 V ~ 400 V
Part Status: Obsolete
Supplier Device Package: 6-SMD
Load Current: 120 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.6VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 35 Ohms
Approval Agency: CSA, UL
Operating Temperature: -40°C ~ 80°C
Produkt ist nicht verfügbar
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HUF75639G3 HUF75639G3 onsemi huf75639g3-d.pdf Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 30895 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.76 EUR
30+3.74 EUR
120+3.08 EUR
510+2.59 EUR
1020+2.41 EUR
2010+2.37 EUR
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HUF75343G3 HUF75343G3 onsemi HUF75343P3.pdf Description: MOSFET N-CH 55V 75A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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FMS6410BCS FMS6410BCS onsemi FMS6410B.pdf Description: IC VIDEO FILTER 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FSCM0565RGWDTU FSCM0565RGWDTU onsemi FSCM0565R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
Produkt ist nicht verfügbar
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FQA13N50 FQA13N50 onsemi FQA13N50.pdf Description: MOSFET N-CH 500V 13.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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HUFA75339G3 HUFA75339G3 onsemi HUFA75339(G3,P3,S3S).pdf Description: MOSFET N-CH 55V 75A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQA9N90C FQA9N90C onsemi FQA9N90C.pdf Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Produkt ist nicht verfügbar
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HGTP5N120BND HGTP5N120BND onsemi hgtp5n120bnd-d.pdf Description: IGBT NPT 1200V 21A TO-220-3
Reverse Recovery Time (trr): 65 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Obsolete
Gate Charge: 53 nC
Test Condition: 960V, 5A, 25Ohm, 15V
Switching Energy: 450µJ (on), 390µJ (off)
Td (on/off) @ 25°C: 22ns/160ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Produkt ist nicht verfügbar
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FIN1048MTCX FIN1048MTCX onsemi ONSM-S-A0003589267-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER 0/4 16TSSOP
Supplier Device Package: 16-TSSOP
Protocol: LVDS
Data Rate: 400Mbps
Number of Drivers/Receivers: 0/4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Receiver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQA85N06 FQA85N06 onsemi FQA85N06.pdf Description: MOSFET N-CH 60V 100A TO3P
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Produkt ist nicht verfügbar
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HUFA76443P3 HUFA76443P3 onsemi HUF76443P3,%20HUF76443S3S.pdf Description: MOSFET N-CH 60V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4115 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FSCM0765RGWDTU FSCM0765RGWDTU onsemi FSCM0765R.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 95 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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FFPF60SA60DSTU FFPF60SA60DSTU onsemi FFPF60SA60DS_Rev_1.1.pdf Description: DIODE ARR AVAL 600V 8A TO220F-3
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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HUF75345S3S HUF75345S3S onsemi huf75345s3s-d.pdf Description: MOSFET N-CH 55V 75A D2PAK
Produkt ist nicht verfügbar
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HGT1S14N36G3VLS HGT1S14N36G3VLS onsemi HGTP%2CHGT1S%2C14N36G3VL%2CS.pdf Description: IGBT 390V 18A TO-263
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 18 A
Gate Charge: 24 nC
Test Condition: 300V, 7A, 25Ohm, 5V
Td (on/off) @ 25°C: -/7µs
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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H11N1FR2VM H11N1FR2VM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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H11N1SVM H11N1SVM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
auf Bestellung 400 Stücke:
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6+3.45 EUR
50+1.74 EUR
100+1.6 EUR
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HCPL3700WV HCPL3700WV onsemi hcpl3700-d.pdf Description: OPTOISO 2.5KV DARLINGTON 8-DIP
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 45µs, 0.5µs
Turn On / Turn Off Time (Typ): 6µs, 25µs
Voltage - Output (Max): 20V
Supplier Device Package: 8-MDIP
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 30mA
Input Type: AC, DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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HCPL3700V HCPL3700V onsemi hcpl3700-d.pdf Description: OPTOISOLTR 2.5KV 1CH DARL 8-DIP
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 45µs, 0.5µs
Turn On / Turn Off Time (Typ): 6µs, 25µs
Voltage - Output (Max): 20V
Supplier Device Package: 8-DIP
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 30mA
Input Type: AC, DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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H11N1VM H11N1VM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 582 Stücke:
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6+3.41 EUR
50+1.73 EUR
100+1.59 EUR
500+1.34 EUR
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H11N1FVM H11N1FVM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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H11N1FR2M H11N1FR2M onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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H11N1SR2VM H11N1SR2VM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.35 EUR
2000+1.29 EUR
3000+1.26 EUR
Mindestbestellmenge: 1000
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H11N1SM H11N1SM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
auf Bestellung 355 Stücke:
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6+3.4 EUR
10+2.19 EUR
100+1.57 EUR
Mindestbestellmenge: 6
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H11N1TM H11N1TM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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H11N1SR2M H11N1SR2M onsemi H11N1M-D.PDF Description: OPTOISO 4.17KV OPN COLL 6-SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.34 EUR
2000+1.28 EUR
3000+1.25 EUR
5000+1.21 EUR
7000+1.19 EUR
10000+1.17 EUR
Mindestbestellmenge: 1000
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H11N1FM H11N1FM onsemi ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 4.17KV OPN COLL 6DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
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FQP90N10V2 FQP90N10V2 onsemi FQP90N10V2%2C%20FQPF90N10V2.pdf Description: MOSFET N-CH 100V 90A TO220-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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FQH70N10 FQH70N10 onsemi FQH70N10.pdf Description: MOSFET N-CH 100V 70A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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FQI12N50TU FQI12N50TU onsemi FQB12N50%2C%20FQI12N50.pdf Description: MOSFET N-CH 500V 12.1A I2PAK
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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HCPL0601 HCPL0601 onsemi HCPL0639-D.pdf Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 1861 Stücke:
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50+1.45 EUR
100+1.34 EUR
500+1.15 EUR
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HUFA75343S3S HUFA75343S3S onsemi HUFA75343G3%2CP3%2CS3S.pdf Description: MOSFET N-CH 55V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
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FST16211G FST16211G onsemi FST16211.pdf Description: IC BUS SWITCH 12 X 1:1 54FBGA
Supplier Device Package: 54-FBGA (5.5x8)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 12 x 1:1
Mounting Type: Surface Mount
Package / Case: 54-LFBGA
Packaging: Tray
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HCPL0601R1 HCPL0601R1 onsemi HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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RURG1520CC RURG1520CC onsemi rurg1520cc-d.pdf Description: DIODE ARRAY GP 200V 15A TO247
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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HCPL0611 HCPL0611 onsemi HCPL0639-D.pdf Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1433 Stücke:
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8+2.45 EUR
50+1.42 EUR
100+1.32 EUR
500+1.13 EUR
1000+1.07 EUR
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FJAF6916TU FJAF6916TU onsemi FJAF6916.pdf Description: TRANS NPN 800V 16A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 16 A
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8.5A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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HUF75545P3 HUF75545P3 onsemi HUF75545S3S-D.PDF Description: MOSFET N-CH 80V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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HCPL0611R1 HCPL0611R1 onsemi HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
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HUFA75343S3ST HUFA75343S3ST onsemi HUFA75343G3%2CP3%2CS3S.pdf Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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HCPL2630SV HCPL2630SV onsemi HCPL2631-D.PDF Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 2
Current - Output / Channel: 50 mA
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HCPL2630WV HCPL2630WV onsemi ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 2.5KV 2CH OPEN COLL 8DIP
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-MDIP
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - Output / Channel: 50 mA
Number of Channels: 2
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
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FSAV430MTCX FSAV430MTCX onsemi fsav430-d.pdf Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 1.1GHz
On-State Resistance (Max): 6Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: Bi-Directional, RGB
Packaging: Tape & Reel (TR)
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
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FSAV430MTC FSAV430MTC onsemi fsav430-d.pdf Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 1.1GHz
On-State Resistance (Max): 6Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: Bi-Directional, RGB
Packaging: Tube
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HUF75545S3S HUF75545S3S onsemi huf75545s3s-d.pdf Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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HUF75545S3 HUF75545S3 onsemi huf75545s3s-d.pdf Description: MOSFET N-CH 80V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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SGH15N60RUFDTU SGH15N60RUFDTU onsemi SGH15N60RUFD.pdf Description: IGBT 600V 24A 160W TO3P
Power - Max: 160 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 24 A
Part Status: Obsolete
Gate Charge: 42 nC
Test Condition: 300V, 15A, 13Ohm, 15V
Switching Energy: 320µJ (on), 356µJ (off)
Td (on/off) @ 25°C: 17ns/44ns
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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ISL9R18120G2 ISL9R18120G2 onsemi isl9r18120s3s-d.pdf Description: DIODE AVALANCHE 1200V 18A TO2472
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 18 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 18A
Technology: Avalanche
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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FQB45N15V2TM FQB45N15V2TM onsemi FAIRS25243-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 45A D2PAK
Produkt ist nicht verfügbar
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KA5M0965QTU onsemi KA5M0965Q.pdf Description: IC OFFLINE SW MULT TOP TO3P-5L
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 9 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-3P-5L
Voltage - Supply (Vcc/Vdd): 15V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 70kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-3P-5
Packaging: Tube
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KA5M0965QYDTU onsemi KA5M0965Q.pdf Description: IC OFFLINE SW MULT TOP TO3P-5L
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 9 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-3P-5L (Forming)
Voltage - Supply (Vcc/Vdd): 15V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 70kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-3P-5 Formed Leads
Packaging: Tube
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HUF75545S3ST HUF75545S3ST onsemi HUF75545S3S-D.PDF Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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SGH40N60UFDM1TU SGH40N60UFDM1TU onsemi SGH40N60UFD.pdf Description: IGBT 600V 40A 160W TO3P
Part Status: Obsolete
Gate Charge: 97 nC
Test Condition: 300V, 20A, 10Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 15ns/65ns
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Power - Max: 160 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQPF90N10V2 FQPF90N10V2 onsemi FQP90N10V2, FQPF90N10V2.pdf Description: MOSFET N-CH 100V 90A TO220F
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Produkt ist nicht verfügbar
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FQA90N08 FQA90N08 onsemi fqa90n08-d.pdf Description: MOSFET N-CH 80V 90A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.5 EUR
30+4.16 EUR
Mindestbestellmenge: 3
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HGTP10N120BN HGTP10N120BN onsemi hgtp10n120bn-d.pdf Description: IGBT NPT 1200V 35A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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HGTP12N60C3 HGTP12N60C3 onsemi HGTP12N60C3%2CHGT1S12N60C3S_DS.pdf Description: IGBT 600V 24A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-220-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
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RHRG1560CC RHRG1560CC onsemi rhrg1560cc-d.pdf Description: DIODE ARRAY GP 600V 15A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Produkt ist nicht verfügbar
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HCPL2631SDV HCPL2631SDV onsemi HCPL2631-D.PDF Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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HSR412LSR2 HSR312%28L%29%2C412%28L%29_DS.pdf
Hersteller: onsemi
Description: SSR RELAY SPST-NO 120MA 0-400V
Voltage - Load: 0 V ~ 400 V
Part Status: Obsolete
Supplier Device Package: 6-SMD
Load Current: 120 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.6VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD (0.300", 7.62mm)
Packaging: Tape & Reel (TR)
On-State Resistance (Max): 35 Ohms
Approval Agency: CSA, UL
Operating Temperature: -40°C ~ 80°C
Produkt ist nicht verfügbar
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HUF75639G3 huf75639g3-d.pdf
HUF75639G3
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 30895 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
30+3.74 EUR
120+3.08 EUR
510+2.59 EUR
1020+2.41 EUR
2010+2.37 EUR
Mindestbestellmenge: 3
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HUF75343G3 HUF75343P3.pdf
HUF75343G3
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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FMS6410BCS FMS6410B.pdf
FMS6410BCS
Hersteller: onsemi
Description: IC VIDEO FILTER 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FSCM0565RGWDTU FSCM0565R.pdf
FSCM0565RGWDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 80%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 85 W
Produkt ist nicht verfügbar
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FQA13N50 FQA13N50.pdf
FQA13N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 13.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 6.7A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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HUFA75339G3 HUFA75339(G3,P3,S3S).pdf
HUFA75339G3
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQA9N90C FQA9N90C.pdf
FQA9N90C
Hersteller: onsemi
Description: MOSFET N-CH 900V 9A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Produkt ist nicht verfügbar
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HGTP5N120BND hgtp5n120bnd-d.pdf
HGTP5N120BND
Hersteller: onsemi
Description: IGBT NPT 1200V 21A TO-220-3
Reverse Recovery Time (trr): 65 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Obsolete
Gate Charge: 53 nC
Test Condition: 960V, 5A, 25Ohm, 15V
Switching Energy: 450µJ (on), 390µJ (off)
Td (on/off) @ 25°C: 22ns/160ns
IGBT Type: NPT
Supplier Device Package: TO-220-3
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Produkt ist nicht verfügbar
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FIN1048MTCX ONSM-S-A0003589267-1.pdf?t.download=true&u=5oefqw
FIN1048MTCX
Hersteller: onsemi
Description: IC TRANSCEIVER 0/4 16TSSOP
Supplier Device Package: 16-TSSOP
Protocol: LVDS
Data Rate: 400Mbps
Number of Drivers/Receivers: 0/4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Receiver
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQA85N06 FQA85N06.pdf
FQA85N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 100A TO3P
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Produkt ist nicht verfügbar
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HUFA76443P3 HUF76443P3,%20HUF76443S3S.pdf
HUFA76443P3
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4115 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 260W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FSCM0765RGWDTU FSCM0765R.pdf
FSCM0765RGWDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 95 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 80%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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FFPF60SA60DSTU FFPF60SA60DS_Rev_1.1.pdf
FFPF60SA60DSTU
Hersteller: onsemi
Description: DIODE ARR AVAL 600V 8A TO220F-3
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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HUF75345S3S huf75345s3s-d.pdf
HUF75345S3S
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A D2PAK
Produkt ist nicht verfügbar
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HGT1S14N36G3VLS HGTP%2CHGT1S%2C14N36G3VL%2CS.pdf
HGT1S14N36G3VLS
Hersteller: onsemi
Description: IGBT 390V 18A TO-263
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 390 V
Current - Collector (Ic) (Max): 18 A
Gate Charge: 24 nC
Test Condition: 300V, 7A, 25Ohm, 5V
Td (on/off) @ 25°C: -/7µs
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 5V, 14A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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H11N1FR2VM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1FR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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H11N1SVM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
50+1.74 EUR
100+1.6 EUR
Mindestbestellmenge: 6
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HCPL3700WV hcpl3700-d.pdf
HCPL3700WV
Hersteller: onsemi
Description: OPTOISO 2.5KV DARLINGTON 8-DIP
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 45µs, 0.5µs
Turn On / Turn Off Time (Typ): 6µs, 25µs
Voltage - Output (Max): 20V
Supplier Device Package: 8-MDIP
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 30mA
Input Type: AC, DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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HCPL3700V hcpl3700-d.pdf
HCPL3700V
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 1CH DARL 8-DIP
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 45µs, 0.5µs
Turn On / Turn Off Time (Typ): 6µs, 25µs
Voltage - Output (Max): 20V
Supplier Device Package: 8-DIP
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 30mA
Input Type: AC, DC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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H11N1VM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1VM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
50+1.73 EUR
100+1.59 EUR
500+1.34 EUR
Mindestbestellmenge: 6
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H11N1FVM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1FVM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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H11N1FR2M ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1FR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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H11N1SR2VM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1SR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.35 EUR
2000+1.29 EUR
3000+1.26 EUR
Mindestbestellmenge: 1000
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H11N1SM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1SM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.19 EUR
100+1.57 EUR
Mindestbestellmenge: 6
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H11N1TM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1TM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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H11N1SR2M H11N1M-D.PDF
H11N1SR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.34 EUR
2000+1.28 EUR
3000+1.25 EUR
5000+1.21 EUR
7000+1.19 EUR
10000+1.17 EUR
Mindestbestellmenge: 1000
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H11N1FM ONSM-S-A0004903568-1.pdf?t.download=true&u=5oefqw
H11N1FM
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 330ns, 330ns
Rise / Fall Time (Typ): 7.5ns, 12ns
Supplier Device Package: 6-DIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 5MHz
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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FQP90N10V2 FQP90N10V2%2C%20FQPF90N10V2.pdf
FQP90N10V2
Hersteller: onsemi
Description: MOSFET N-CH 100V 90A TO220-3
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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FQH70N10 FQH70N10.pdf
FQH70N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 70A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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FQI12N50TU FQB12N50%2C%20FQI12N50.pdf
FQI12N50TU
Hersteller: onsemi
Description: MOSFET N-CH 500V 12.1A I2PAK
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 179W (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 6.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
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HCPL0601 HCPL0639-D.pdf
HCPL0601
Hersteller: onsemi
Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 1861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
50+1.45 EUR
100+1.34 EUR
500+1.15 EUR
1000+1.08 EUR
Mindestbestellmenge: 8
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HUFA75343S3S HUFA75343G3%2CP3%2CS3S.pdf
HUFA75343S3S
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Produkt ist nicht verfügbar
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FST16211G FST16211.pdf
FST16211G
Hersteller: onsemi
Description: IC BUS SWITCH 12 X 1:1 54FBGA
Supplier Device Package: 54-FBGA (5.5x8)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 12 x 1:1
Mounting Type: Surface Mount
Package / Case: 54-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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HCPL0601R1 HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf
HCPL0601R1
Hersteller: onsemi
Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 3750Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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RURG1520CC rurg1520cc-d.pdf
RURG1520CC
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 15A TO247
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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HCPL0611 HCPL0639-D.pdf
HCPL0611
Hersteller: onsemi
Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
50+1.42 EUR
100+1.32 EUR
500+1.13 EUR
1000+1.07 EUR
Mindestbestellmenge: 8
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FJAF6916TU FJAF6916.pdf
FJAF6916TU
Hersteller: onsemi
Description: TRANS NPN 800V 16A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 16 A
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 8.5A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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HUF75545P3 HUF75545S3S-D.PDF
HUF75545P3
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Produkt ist nicht verfügbar
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HCPL0611R1 HCPL0600%2C01%2C11%2C0637%2C38%2C39.pdf
HCPL0611R1
Hersteller: onsemi
Description: OPTOISO 3.75KV OPEN COLL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 1
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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HUFA75343S3ST HUFA75343G3%2CP3%2CS3S.pdf
HUFA75343S3ST
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HCPL2630SV HCPL2631-D.PDF
HCPL2630SV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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HCPL2630WV ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw
HCPL2630WV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPEN COLL 8DIP
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-MDIP
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - Output / Channel: 50 mA
Number of Channels: 2
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Produkt ist nicht verfügbar
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FSAV430MTCX fsav430-d.pdf
FSAV430MTCX
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 1.1GHz
On-State Resistance (Max): 6Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: Bi-Directional, RGB
Packaging: Tape & Reel (TR)
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Produkt ist nicht verfügbar
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FSAV430MTC fsav430-d.pdf
FSAV430MTC
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 1.1GHz
On-State Resistance (Max): 6Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: Bi-Directional, RGB
Packaging: Tube
Produkt ist nicht verfügbar
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HUF75545S3S huf75545s3s-d.pdf
HUF75545S3S
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Produkt ist nicht verfügbar
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HUF75545S3 huf75545s3s-d.pdf
HUF75545S3
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
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SGH15N60RUFDTU SGH15N60RUFD.pdf
SGH15N60RUFDTU
Hersteller: onsemi
Description: IGBT 600V 24A 160W TO3P
Power - Max: 160 W
Current - Collector Pulsed (Icm): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 24 A
Part Status: Obsolete
Gate Charge: 42 nC
Test Condition: 300V, 15A, 13Ohm, 15V
Switching Energy: 320µJ (on), 356µJ (off)
Td (on/off) @ 25°C: 17ns/44ns
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 15A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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ISL9R18120G2 isl9r18120s3s-d.pdf
ISL9R18120G2
Hersteller: onsemi
Description: DIODE AVALANCHE 1200V 18A TO2472
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 18 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 18A
Technology: Avalanche
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
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FQB45N15V2TM FAIRS25243-1.pdf?t.download=true&u=5oefqw
FQB45N15V2TM
Hersteller: onsemi
Description: MOSFET N-CH 150V 45A D2PAK
Produkt ist nicht verfügbar
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KA5M0965QTU KA5M0965Q.pdf
Hersteller: onsemi
Description: IC OFFLINE SW MULT TOP TO3P-5L
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 9 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-3P-5L
Voltage - Supply (Vcc/Vdd): 15V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 70kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-3P-5
Packaging: Tube
Produkt ist nicht verfügbar
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KA5M0965QYDTU KA5M0965Q.pdf
Hersteller: onsemi
Description: IC OFFLINE SW MULT TOP TO3P-5L
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 9 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-3P-5L (Forming)
Voltage - Supply (Vcc/Vdd): 15V ~ 30V
Topology: Flyback, Forward
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 70kHz
Duty Cycle: 77%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-3P-5 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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HUF75545S3ST HUF75545S3S-D.PDF
HUF75545S3ST
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 75A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 235 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Produkt ist nicht verfügbar
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SGH40N60UFDM1TU SGH40N60UFD.pdf
SGH40N60UFDM1TU
Hersteller: onsemi
Description: IGBT 600V 40A 160W TO3P
Part Status: Obsolete
Gate Charge: 97 nC
Test Condition: 300V, 20A, 10Ohm, 15V
Switching Energy: 160µJ (on), 200µJ (off)
Td (on/off) @ 25°C: 15ns/65ns
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Power - Max: 160 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQPF90N10V2 FQP90N10V2, FQPF90N10V2.pdf
FQPF90N10V2
Hersteller: onsemi
Description: MOSFET N-CH 100V 90A TO220F
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
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FQA90N08 fqa90n08-d.pdf
FQA90N08
Hersteller: onsemi
Description: MOSFET N-CH 80V 90A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.5 EUR
30+4.16 EUR
Mindestbestellmenge: 3
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HGTP10N120BN hgtp10n120bn-d.pdf
HGTP10N120BN
Hersteller: onsemi
Description: IGBT NPT 1200V 35A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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HGTP12N60C3 HGTP12N60C3%2CHGT1S12N60C3S_DS.pdf
HGTP12N60C3
Hersteller: onsemi
Description: IGBT 600V 24A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-220-3
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
Produkt ist nicht verfügbar
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RHRG1560CC rhrg1560cc-d.pdf
RHRG1560CC
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 15A TO247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Produkt ist nicht verfügbar
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HCPL2631SDV HCPL2631-D.PDF
HCPL2631SDV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.4V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 2500Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 50ns, 12ns
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Obsolete
Number of Channels: 2
Current - Output / Channel: 50 mA
Produkt ist nicht verfügbar
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