FQAF70N15 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 150V 44A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 117+ | 4.31 EUR |
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Technische Details FQAF70N15 Fairchild Semiconductor
Description: MOSFET N-CH 150V 44A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 130W (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Weitere Produktangebote FQAF70N15
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQAF70N15 | onsemi |
Description: MOSFET N-CH 150V 44A TO3PFDrain to Source Voltage (Vdss): 150 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQAF70N15 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 44A TO3PF
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
FET Type: N-Channel
Description: MOSFET N-CH 150V 44A TO3PF
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

