FQA65N20 Fairchild
Hersteller: Fairchild
N-MOSFET 65A 200V 310W 0.032Ω FQA65N20 TFQA65n20
Anzahl je Verpackung: 2 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 7.39 EUR |
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Technische Details FQA65N20 Fairchild
Description: MOSFET N-CH 200V 65A TO3PN, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.
Weitere Produktangebote FQA65N20
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQA65N20 | Hersteller : onsemi |
Description: MOSFET N-CH 200V 65A TO3PN Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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FQA65N20 | Hersteller : onsemi / Fairchild |
MOSFET 200V N-Channel QFET |
Produkt ist nicht verfügbar |