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FQPF47P06 FQPF47P06 onsemi fqpf47p06-d.pdf Description: MOSFET P-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 6087 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.81 EUR
50+3.51 EUR
100+3.19 EUR
500+2.63 EUR
1000+2.45 EUR
2000+2.41 EUR
Mindestbestellmenge: 3
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FQPF27N25 FQPF27N25 onsemi fqpf27n25-d.pdf Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 46 Stücke:
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HUFA75637P3 HUFA75637P3 onsemi HUFA75637P3%2CHUFA75637S3S.pdf Description: MOSFET N-CH 100V 44A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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FQPF55N10 FQPF55N10 onsemi FQPF55N10.pdf Description: MOSFET N-CH 100V 34.2A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 17.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 34.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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FIN1019MTC FIN1019MTC onsemi FIN1019.pdf Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Part Status: Obsolete
Duplex: Full
Supplier Device Package: 14-TSSOP
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Protocol: LVDS
Data Rate: 400Mbps
Produkt ist nicht verfügbar
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FMS6400CS FMS6400CS onsemi FMS6400.pdf Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FQPF5N90 FQPF5N90 onsemi fqpf5n90-d.pdf Description: MOSFET N-CH 900V 3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FIN1019MTCX FIN1019MTCX onsemi FIN1019.pdf Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
auf Bestellung 10000 Stücke:
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2500+1.46 EUR
5000+1.43 EUR
7500+1.41 EUR
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FMS6400CS1 FMS6400CS1 onsemi FMS6400.pdf Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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ISL9R8120S3ST ISL9R8120S3ST onsemi ISL9R8120P2%2CISL9R8120S3S.pdf Description: DIODE GEN PURP 1.2KV 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HUFA76633S3S HUFA76633S3S onsemi HUFA76633P3%2CS3S.pdf Description: MOSFET N-CH 100V 39A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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FFA20U60DNTU FFA20U60DNTU onsemi FFA20U60DN.pdf Description: DIODE ARRAY GP 600V 20A TO3P
Produkt ist nicht verfügbar
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RFP50N05L RFP50N05L onsemi RFP50N05L.pdf Description: MOSFET N-CH 50V 50A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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HCPL2611WV HCPL2611WV onsemi ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 2.5KV OPN COLLECTOR 8DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-MDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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FQA65N06 FQA65N06 onsemi FQA65N06.pdf Description: MOSFET N-CH 60V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 36A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Produkt ist nicht verfügbar
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HUF75637S3S HUF75637S3S onsemi HUF75637P3.pdf Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Produkt ist nicht verfügbar
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FQB34P10TM FQB34P10TM onsemi FQB34P10CN-D.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
auf Bestellung 8000 Stücke:
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1600+1.99 EUR
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FQB5N90TM FQB5N90TM onsemi fqb5n90-d.pdf Description: MOSFET N-CH 900V 5.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HCPL2611SDV HCPL2611SDV onsemi ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQP22N30 FQP22N30 onsemi FAIRS45802-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 300V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FFAF20U20DNTU FFAF20U20DNTU onsemi FFAF20U20DN.pdf Description: DIODE ARRAY GP 200V 20A TO-3PF
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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HUFA75637S3S HUFA75637S3S onsemi HUFA75637P3%2CHUFA75637S3S.pdf Description: MOSFET N-CH 100V 44A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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FFAF30U60DNTU FFAF30U60DNTU onsemi FFAF30U60DN.pdf Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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FQP34N20L FQP34N20L onsemi FQP34N20L.pdf Description: MOSFET N-CH 200V 31A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FOD260LSD FOD260LSD onsemi fod260l-d.pdf Description: OPTOISO 5KV OPEN COLLECTOR 8SMD
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 90ns, 75ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 22ns, 3ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.94 EUR
Mindestbestellmenge: 1000
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HUF75639S3 HUF75639S3 onsemi huf75639g3-d.pdf Description: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.58 EUR
10+3.66 EUR
100+2.56 EUR
800+1.99 EUR
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FQPF7N80 FQPF7N80 onsemi FQPF7N80.pdf Description: MOSFET N-CH 800V 3.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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FQPF27N25T FQPF27N25T onsemi fqpf27n25-d.pdf Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
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FJA4213OTU FJA4213OTU onsemi fja4213-d.pdf Description: TRANS PNP 250V 17A TO3P
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
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FJA4213RTU FJA4213RTU onsemi fja4213-d.pdf Description: TRANS PNP 250V 17A TO3P
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQP34N20 FQP34N20 onsemi ONSM-S-A0003585150-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 31A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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FQPF70N10 FQPF70N10 onsemi fqpf70n10-d.pdf Description: MOSFET N-CH 100V 35A TO220F
Rds On (Max) @ Id, Vgs: 23mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
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FJAF6812TU FJAF6812TU onsemi FJAF6812TU.pdf Description: TRANS NPN 750V 12A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 8A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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SGW10N60RUFDTM SGW10N60RUFDTM onsemi SGW10N60RUFD.pdf Description: IGBT 600V 16A 75W D2PAK
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 30 nC
Test Condition: 300V, 10A, 20Ohm, 15V
Switching Energy: 141µJ (on), 215µJ (off)
Td (on/off) @ 25°C: 15ns/36ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 75 W
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FQP6N90 FQP6N90 onsemi FQP6N90.pdf Description: MOSFET N-CH 900V 5.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 2.9A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
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FSAV331MTC FSAV331MTC onsemi fsav331-d.pdf Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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FQP70N10 FQP70N10 onsemi fqp70n10-d.pdf Description: MOSFET N-CH 100V 57A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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FQB85N06TM_AM002 FQB85N06TM_AM002 onsemi FQB85N06%2C%20FQI85N06.pdf Description: MOSFET N-CH 60V 85A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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HUFA75639P3 HUFA75639P3 onsemi Description: MOSFET N-CH 100V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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HCPL2731WV HCPL2731WV onsemi 6N138,39_HCPL2730,31.pdf Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
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HCPL2731V HCPL2731V onsemi hcpl2731-d.pdf Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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HCPL2731SV HCPL2731SV onsemi 6N138,39_HCPL2730,31.pdf Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
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HUFA75637S3ST HUFA75637S3ST onsemi HUFA75637P3%2CHUFA75637S3S.pdf Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
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HCPL2731SDV HCPL2731SDV onsemi 6N138,39_HCPL2730,31.pdf Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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FQB12N60CTM FQB12N60CTM onsemi FQB12N60C.pdf Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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FSAV450MTCX FSAV450MTCX onsemi FSAV450.pdf Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 800MHz
On-State Resistance (Max): 7Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: RGB
Packaging: Tape & Reel (TR)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
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HCPL2531V HCPL2531V onsemi hcpl2531-d.pdf Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
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HCPL2730SV HCPL2730SV onsemi 6N138%2C39_HCPL2730%2C31.pdf Description: OPTOISOLTR 2.5KV 2CH DARL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300ns, 5µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
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HCPL2531SV HCPL2531SV onsemi 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
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FQAF58N08 FQAF58N08 onsemi FQAF58N08.pdf Description: MOSFET N-CH 80V 44A TO3PF
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FFA30U60DNTU FFA30U60DNTU onsemi FFA30U60DN.pdf Description: DIODE ARRAY GP 600V 30A TO-3P
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3P
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQP17N40 FQP17N40 onsemi fqp17n40-d.pdf Description: MOSFET N-CH 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 2174 Stücke:
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100+2.48 EUR
500+2.02 EUR
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Mindestbestellmenge: 4
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FQPF6N90 FQPF6N90 onsemi FQPF6N90.pdf Description: MOSFET N-CH 900V 3.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.7A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
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FM3560M20X FM3560M20X onsemi FM3540,60.pdf Description: MULTIPLEXER 4/5BIT 2WIRE 20SOIC
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FQPF85N06 FQPF85N06 onsemi fqpf85n06-d.pdf Description: MOSFET N-CH 60V 53A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 26.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FTM3725 FTM3725 onsemi FTM3725.PDF Description: TRANS 4NPN 40V 1.2A 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SOIC
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1.2A
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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HUF76639S3ST HUF76639S3ST onsemi huf76639s3s-d.pdf Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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FQB7N80TM_AM002 FQB7N80TM_AM002 onsemi Description: MOSFET N-CH 800V 6.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Produkt ist nicht verfügbar
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FQA7N60 FQA7N60 onsemi FQA7N60.pdf Description: MOSFET N-CH 600V 7.7A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQP85N06 FQP85N06 onsemi fqp85n06-d.pdf Description: MOSFET N-CH 60V 85A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQPF47P06 fqpf47p06-d.pdf
FQPF47P06
Hersteller: onsemi
Description: MOSFET P-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 6087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.81 EUR
50+3.51 EUR
100+3.19 EUR
500+2.63 EUR
1000+2.45 EUR
2000+2.41 EUR
Mindestbestellmenge: 3
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FQPF27N25 fqpf27n25-d.pdf
FQPF27N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
Mindestbestellmenge: 3
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HUFA75637P3 HUFA75637P3%2CHUFA75637S3S.pdf
HUFA75637P3
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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FQPF55N10 FQPF55N10.pdf
FQPF55N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 34.2A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 17.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 34.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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FIN1019MTC FIN1019.pdf
FIN1019MTC
Hersteller: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Part Status: Obsolete
Duplex: Full
Supplier Device Package: 14-TSSOP
Number of Drivers/Receivers: 1/1
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Protocol: LVDS
Data Rate: 400Mbps
Produkt ist nicht verfügbar
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FMS6400CS FMS6400.pdf
FMS6400CS
Hersteller: onsemi
Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FQPF5N90 fqpf5n90-d.pdf
FQPF5N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 51W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FIN1019MTCX FIN1019.pdf
FIN1019MTCX
Hersteller: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.46 EUR
5000+1.43 EUR
7500+1.41 EUR
Mindestbestellmenge: 2500
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FMS6400CS1 FMS6400.pdf
FMS6400CS1
Hersteller: onsemi
Description: IC VIDEO DRIVER 8SOIC
Supplier Device Package: 8-SOIC
Standards: PAL
Applications: Consumer Video
Voltage - Supply: 4.75V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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ISL9R8120S3ST ISL9R8120P2%2CISL9R8120S3S.pdf
ISL9R8120S3ST
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Technology: Avalanche
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HUFA76633S3S HUFA76633P3%2CS3S.pdf
HUFA76633S3S
Hersteller: onsemi
Description: MOSFET N-CH 100V 39A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 145W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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FFA20U60DNTU FFA20U60DN.pdf
FFA20U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 20A TO3P
Produkt ist nicht verfügbar
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RFP50N05L RFP50N05L.pdf
RFP50N05L
Hersteller: onsemi
Description: MOSFET N-CH 50V 50A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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HCPL2611WV ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw
HCPL2611WV
Hersteller: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8DIP
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-MDIP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Open Collector
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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FQA65N06 FQA65N06.pdf
FQA65N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 36A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Produkt ist nicht verfügbar
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HUF75637S3S HUF75637P3.pdf
HUF75637S3S
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Produkt ist nicht verfügbar
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FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.08 EUR
1600+1.99 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FQB5N90TM fqb5n90-d.pdf
FQB5N90TM
Hersteller: onsemi
Description: MOSFET N-CH 900V 5.4A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HCPL2611SDV ONSM-S-A0006115631-1.pdf?t.download=true&u=5oefqw
HCPL2611SDV
Hersteller: onsemi
Description: OPTOISO 2.5KV OPN COLLECTOR 8SMD
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 50ns, 12ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQP22N30 FAIRS45802-1.pdf?t.download=true&u=5oefqw
FQP22N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 21A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FFAF20U20DNTU FFAF20U20DN.pdf
FFAF20U20DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 20A TO-3PF
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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HUFA75637S3S HUFA75637P3%2CHUFA75637S3S.pdf
HUFA75637S3S
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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FFAF30U60DNTU FFAF30U60DN.pdf
FFAF30U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
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FQP34N20L FQP34N20L.pdf
FQP34N20L
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FOD260LSD fod260l-d.pdf
FOD260LSD
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 8SMD
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Active
Propagation Delay tpLH / tpHL (Max): 90ns, 75ns
Common Mode Transient Immunity (Min): 25kV/µs
Rise / Fall Time (Typ): 22ns, 3ns
Supplier Device Package: 8-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 50mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.4V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.94 EUR
Mindestbestellmenge: 1000
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HUF75639S3 huf75639g3-d.pdf
HUF75639S3
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+3.66 EUR
100+2.56 EUR
800+1.99 EUR
Mindestbestellmenge: 4
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FQPF7N80 FQPF7N80.pdf
FQPF7N80
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.8A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FQPF27N25T fqpf27n25-d.pdf
FQPF27N25T
Hersteller: onsemi
Description: MOSFET N-CH 250V 14A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 7A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
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FJA4213OTU fja4213-d.pdf
FJA4213OTU
Hersteller: onsemi
Description: TRANS PNP 250V 17A TO3P
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
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FJA4213RTU fja4213-d.pdf
FJA4213RTU
Hersteller: onsemi
Description: TRANS PNP 250V 17A TO3P
Power - Max: 130 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 17 A
Part Status: Obsolete
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQP34N20 ONSM-S-A0003585150-1.pdf?t.download=true&u=5oefqw
FQP34N20
Hersteller: onsemi
Description: MOSFET N-CH 200V 31A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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FQPF70N10 fqpf70n10-d.pdf
FQPF70N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 35A TO220F
Rds On (Max) @ Id, Vgs: 23mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
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FJAF6812TU FJAF6812TU.pdf
FJAF6812TU
Hersteller: onsemi
Description: TRANS NPN 750V 12A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 8A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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SGW10N60RUFDTM SGW10N60RUFD.pdf
SGW10N60RUFDTM
Hersteller: onsemi
Description: IGBT 600V 16A 75W D2PAK
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 30 nC
Test Condition: 300V, 10A, 20Ohm, 15V
Switching Energy: 141µJ (on), 215µJ (off)
Td (on/off) @ 25°C: 15ns/36ns
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power - Max: 75 W
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FQP6N90 FQP6N90.pdf
FQP6N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 5.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 2.9A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Produkt ist nicht verfügbar
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FSAV331MTC fsav331-d.pdf
FSAV331MTC
Hersteller: onsemi
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FQP70N10 fqp70n10-d.pdf
FQP70N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 57A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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FQB85N06TM_AM002 FQB85N06%2C%20FQI85N06.pdf
FQB85N06TM_AM002
Hersteller: onsemi
Description: MOSFET N-CH 60V 85A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HUFA75639P3
HUFA75639P3
Hersteller: onsemi
Description: MOSFET N-CH 100V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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HCPL2731WV 6N138,39_HCPL2730,31.pdf
HCPL2731WV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-MDIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.400", 10.16mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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HCPL2731V hcpl2731-d.pdf
HCPL2731V
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8DIP
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Output Type: Darlington
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HCPL2731SV 6N138,39_HCPL2730,31.pdf
HCPL2731SV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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HUFA75637S3ST HUFA75637P3%2CHUFA75637S3S.pdf
HUFA75637S3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 44A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 155W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
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HCPL2731SDV 6N138,39_HCPL2730,31.pdf
HCPL2731SDV
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH DARL 8SMD
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 2
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 300ns, 5µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SMD
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQB12N60CTM FQB12N60C.pdf
FQB12N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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FSAV450MTCX FSAV450.pdf
FSAV450MTCX
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 800MHz
On-State Resistance (Max): 7Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: RGB
Packaging: Tape & Reel (TR)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
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HCPL2531V hcpl2531-d.pdf
HCPL2531V
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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HCPL2730SV 6N138%2C39_HCPL2730%2C31.pdf
HCPL2730SV
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 2CH DARL 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Input Type: DC
Current - Output / Channel: 60mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 300ns, 5µs
Number of Channels: 2
Current - DC Forward (If) (Max): 20 mA
Produkt ist nicht verfügbar
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HCPL2531SV 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf
HCPL2531SV
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 2CH TRANS 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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FQAF58N08 FQAF58N08.pdf
FQAF58N08
Hersteller: onsemi
Description: MOSFET N-CH 80V 44A TO3PF
Produkt ist nicht verfügbar
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FFA30U60DNTU FFA30U60DN.pdf
FFA30U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 30A TO-3P
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3P
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQP17N40 fqp17n40-d.pdf
FQP17N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 2174 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
50+2.74 EUR
100+2.48 EUR
500+2.02 EUR
1000+1.87 EUR
2000+1.77 EUR
Mindestbestellmenge: 4
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FQPF6N90 FQPF6N90.pdf
FQPF6N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 3.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.7A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 25 V
Produkt ist nicht verfügbar
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FM3560M20X FM3540,60.pdf
FM3560M20X
Hersteller: onsemi
Description: MULTIPLEXER 4/5BIT 2WIRE 20SOIC
Produkt ist nicht verfügbar
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FQPF85N06 fqpf85n06-d.pdf
FQPF85N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 53A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 26.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FTM3725 FTM3725.PDF
FTM3725
Hersteller: onsemi
Description: TRANS 4NPN 40V 1.2A 16SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-SOIC
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 950mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 1.2A
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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HUF76639S3ST huf76639s3s-d.pdf
HUF76639S3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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FQB7N80TM_AM002
FQB7N80TM_AM002
Hersteller: onsemi
Description: MOSFET N-CH 800V 6.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Produkt ist nicht verfügbar
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FQA7N60 FQA7N60.pdf
FQA7N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.7A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQP85N06 fqp85n06-d.pdf
FQP85N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 85A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 42.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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