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FES16JTR FES16JTR onsemi FES16AT.pdf Description: DIODE STANDARD 600V 16A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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FES16CTR FES16CTR onsemi FES16AT.pdf Description: DIODE STANDARD 150V 16A TO2202
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
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FEP16JTA FEP16JTA onsemi FEP16AT.pdf Description: DIODE ARRAY GP 600V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FES16FT FES16FT onsemi FES16AT.pdf Description: DIODE STANDARD 300V 16A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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FES16DT FES16DT onsemi FES16AT.pdf Description: DIODE STANDARD 200V 16A TO2202
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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FQP2NA90 FQP2NA90 onsemi FQP2NA90.pdf Description: MOSFET N-CH 900V 2.8A TO220-3
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.8Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
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KSA3010RTU KSA3010RTU onsemi KSA3010.PDF Description: TRANS PNP 120V 6A TO-3P
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQP17P10 FQP17P10 onsemi FQP17P10-D.PDF Description: MOSFET P-CH 100V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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FQP9P25 FQP9P25 onsemi fqp9p25-d.pdf Description: MOSFET P-CH 250V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 4.7A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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FQPF22P10 FQPF22P10 onsemi fqpf22p10-d.pdf Description: MOSFET P-CH 100V 13.2A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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FFB20U60STM FFB20U60STM onsemi FFB20U60S.pdf Description: DIODE STANDARD 600V 20A TO263
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FGD3N60LSDTM FGD3N60LSDTM onsemi fgd3n60lsd-d.pdf Description: IGBT 600V 6A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
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HUFA76419D3 HUFA76419D3 onsemi HUFA76419D3(S).pdf Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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KA278RA05CTU KA278RA05CTU onsemi KA278RxxC_Series.pdf Description: IC REG LIN POS ADJ 2A TO220F-4L
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Adjustable (Fixed)
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.25V (5V)
Voltage - Output (Max): 32V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
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ILC5062AIC44X ILC5062AIC44X onsemi ILC5062.pdf Description: IC SUPERVISOR 1 CHANNEL SC70
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FSA4157AP6 FSA4157AP6 onsemi fsa4157-d.pdf Description: IC SWITCH SPDT SC70-6
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KA78T15 KA78T15 onsemi KA78Txx.pdf Description: IC REG LINEAR 15V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 67dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 15V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
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KA78T15TU KA78T15TU onsemi KA78Txx.pdf Description: IC REG LINEAR 15V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 2.5V @ 3A
Protection Features: Over Temperature, Short Circuit
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KA78T12TU KA78T12TU onsemi KA78Txx.pdf Description: IC REG LINEAR 12V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 67dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
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KA278RA05CYDTU KA278RA05CYDTU onsemi KA278RxxC_Series.pdf Description: IC REG LIN POS ADJ 2A TO220F-4L
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Adjustable (Fixed)
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.25V (5V)
Voltage - Output (Max): 32V
Supplier Device Package: TO-220F-4L (Forming)
Number of Regulators: 1
Voltage - Input (Max): 35V
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LM317AHVT LM317AHVT onsemi LM317AHV.pdf Description: IC REG LIN POS ADJ 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 mA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 57V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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KA78T05 KA78T05 onsemi KA78Txx.pdf Description: IC REG LINEAR 5V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 75dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
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KA78T05TU KA78T05TU onsemi KA78Txx.pdf Description: IC REG LINEAR 5V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2.5V @ 3A
Protection Features: Over Temperature, Short Circuit
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FSA66P5 FSA66P5 onsemi Description: IC SWITCH SPST-NO X 1 SC70-5
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 6pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 0.05pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-5
-3db Bandwidth: 250MHz
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FQPF17P10 FQPF17P10 onsemi FQPF17P10.pdf Description: MOSFET P-CH 100V 10.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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FQD5N60CTF FQD5N60CTF onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQPF5N40 FQPF5N40 onsemi fqpf5n40-d.pdf Description: MOSFET N-CH 400V 3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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MBR1650 MBR1650 onsemi MBR1635%20-%2060.pdf Description: DIODE SCHOTTKY 50V 16A TO2202
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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FQP9N30 FQP9N30 onsemi fqp9n30-d.pdf Description: MOSFET N-CH 300V 9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FQB19N20CTM FQB19N20CTM onsemi fqb19n20c-d.pdf Description: MOSFET N-CH 200V 19A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FQB5N50CTM FQB5N50CTM onsemi fqb5n50c-d.pdf Description: MOSFET N-CH 500V 5A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
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FQI19N20CTU FQI19N20CTU onsemi Description: MOSFET N-CH 200V 19A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
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FFPF60B150DSTU FFPF60B150DSTU onsemi FFPF60B150DS.pdf Description: DIODE ARRAY 600V 20A TO220F
Current - Max: 20 A
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Voltage - Peak Reverse (Max): 1500V, 600V
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Standard - 1 Pair Series Connection
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 350 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
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FFPF10U20DPTU FFPF10U20DPTU onsemi FFPF10U20DP.pdf Description: DIODE ARRAY GP 200V 10A TO220F
Produkt ist nicht verfügbar
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FQB3P50TM FQB3P50TM onsemi FQB3P50.pdf Description: MOSFET P-CH 500V 2.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FQI3P50TU FQI3P50TU onsemi FQB3P50.pdf Description: MOSFET P-CH 500V 2.7A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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KA3842AES onsemi Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 96%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting
Voltage - Start Up: 16 V
Control Features: Frequency Control
Part Status: Obsolete
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KA3882ED KA3882ED onsemi KA3882E%2CKA3883E.pdf Description: IC OFFLINE SWITCH 8SOIC
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 16 V
Fault Protection: Current Limiting
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Packaging: Tube
Internal Switch(s): No
Frequency - Switching: Up to 500kHz
Duty Cycle: 96%
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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FQD2N100TM FQD2N100TM onsemi fqu2n100-d.pdf Description: MOSFET N-CH 1000V 1.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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HUF76619D3ST HUF76619D3ST onsemi HUF76619D3,D3S.pdf Description: MOSFET N-CH 100V 18A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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HUF76619D3S HUF76619D3S onsemi HUF76619D3,D3S.pdf Description: MOSFET N-CH 100V 18A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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HUF76419P3 HUF76419P3 onsemi HUF76419S3ST,%20HUF76419S3S,%20HUF76419P3.pdf Description: MOSFET N-CH 60V 29A TO220-3
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HCPL4502SV HCPL4502SV onsemi 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf Description: OPTOISO 2.5KV TRANS W/BASE 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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HCPL4502WV HCPL4502WV onsemi 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf Description: OPTOISO 2.5KV TRANS W/BASE 8MDIP
Packaging: Bulk
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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JFTJ105 JFTJ105 onsemi J105,6,7.pdf Description: JFET N-CH 25V SOT223-4
Current - Drain (Idss) @ Vds (Vgs=0): 500 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4.5 V @ 1 µA
Resistance - RDS(On): 3 Ohms
Power - Max: 1 W
Supplier Device Package: SOT-223-4
Voltage - Breakdown (V(BR)GSS): 25 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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FQD2N80TF FQD2N80TF onsemi Description: MOSFET N-CH 800V 1.8A DPAK
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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FQPF4P40 FQPF4P40 onsemi FQPF4P40.pdf Description: MOSFET P-CH 400V 2.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.2A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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FQD2N90TM FQD2N90TM onsemi fqu2n90tu_am002-d.pdf Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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FQPF11N40CT onsemi Description: MOSFET N-CH 400V 10.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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FQPF8N60C FQPF8N60C onsemi fqpf8n60c-d.pdf description Description: MOSFET N-CH 600V 7.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
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IRL640A IRL640A onsemi irl640a-d.pdf Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 5V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
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FQB2N90TM FQB2N90TM onsemi FQB2N90.pdf Description: MOSFET N-CH 900V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
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FSAV332MTCX FSAV332MTCX onsemi FSAV332.pdf Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
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FSAV332MTC FSAV332MTC onsemi FSAV332.pdf Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
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MOCD223R2VM MOCD223R2VM onsemi MOCD223M-D.PDF Description: OPTOISOLTR 2.5KV 2CH DARL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 10µs, 125µs
Rise / Fall Time (Typ): 8µs, 110µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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FST3383QSCX FST3383QSCX onsemi FST3383.pdf Description: IC BUS FET EXCHG SW 5X2:2 24QSOP
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
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MOCD223R1VM MOCD223R1VM onsemi MOCD223M.pdf Description: OPTOISOLTR 2.5KV 2CH DARL 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 3.5µs, 95µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FSAV330QSC FSAV330QSC onsemi FSAV330.pdf Description: IC VIDEO SWITCH QUAD 2X1 16QSOP
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-QSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Packaging: Tube
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Produkt ist nicht verfügbar
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FQB6N60CTM FQB6N60CTM onsemi FQB6N60C%2CFQI6N60C.pdf Description: MOSFET N-CH 600V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Produkt ist nicht verfügbar
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ISL9R460P2 ISL9R460P2 onsemi ISL9R460P2.pdf Description: DIODE GEN PURP 600V 4A TO220-2
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 22 ns
Produkt ist nicht verfügbar
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FES16JTR FES16AT.pdf
FES16JTR
Hersteller: onsemi
Description: DIODE STANDARD 600V 16A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 145pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES16CTR FES16AT.pdf
FES16CTR
Hersteller: onsemi
Description: DIODE STANDARD 150V 16A TO2202
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Produkt ist nicht verfügbar
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FEP16JTA FEP16AT.pdf
FEP16JTA
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FES16FT FES16AT.pdf
FES16FT
Hersteller: onsemi
Description: DIODE STANDARD 300V 16A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FES16DT FES16AT.pdf
FES16DT
Hersteller: onsemi
Description: DIODE STANDARD 200V 16A TO2202
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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FQP2NA90 FQP2NA90.pdf
FQP2NA90
Hersteller: onsemi
Description: MOSFET N-CH 900V 2.8A TO220-3
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.8Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
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KSA3010RTU KSA3010.PDF
KSA3010RTU
Hersteller: onsemi
Description: TRANS PNP 120V 6A TO-3P
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Supplier Device Package: TO-3P
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQP17P10 FQP17P10-D.PDF
FQP17P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 16.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 5828 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.05 EUR
50+1.96 EUR
100+1.76 EUR
500+1.4 EUR
1000+1.29 EUR
2000+1.19 EUR
5000+1.11 EUR
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FQP9P25 fqp9p25-d.pdf
FQP9P25
Hersteller: onsemi
Description: MOSFET P-CH 250V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 4.7A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
Produkt ist nicht verfügbar
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FQPF22P10 fqpf22p10-d.pdf
FQPF22P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 13.2A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FFB20U60STM FFB20U60S.pdf
FFB20U60STM
Hersteller: onsemi
Description: DIODE STANDARD 600V 20A TO263
Produkt ist nicht verfügbar
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FGD3N60LSDTM fgd3n60lsd-d.pdf
FGD3N60LSDTM
Hersteller: onsemi
Description: IGBT 600V 6A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Reverse Recovery Time (trr): 234 ns
Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 40ns/600ns
Switching Energy: 250µJ (on), 1mJ (off)
Test Condition: 480V, 3A, 470Ohm, 10V
Gate Charge: 12.5 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 40 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.96 EUR
Mindestbestellmenge: 2500 Stücke
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HUFA76419D3 HUFA76419D3(S).pdf
HUFA76419D3
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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KA278RA05CTU KA278RxxC_Series.pdf
KA278RA05CTU
Hersteller: onsemi
Description: IC REG LIN POS ADJ 2A TO220F-4L
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Adjustable (Fixed)
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.25V (5V)
Voltage - Output (Max): 32V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
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ILC5062AIC44X ILC5062.pdf
ILC5062AIC44X
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SC70
Produkt ist nicht verfügbar
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FSA4157AP6 fsa4157-d.pdf
FSA4157AP6
Hersteller: onsemi
Description: IC SWITCH SPDT SC70-6
Produkt ist nicht verfügbar
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KA78T15 KA78Txx.pdf
KA78T15
Hersteller: onsemi
Description: IC REG LINEAR 15V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 67dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 15V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
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KA78T15TU KA78Txx.pdf
KA78T15TU
Hersteller: onsemi
Description: IC REG LINEAR 15V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 2.5V @ 3A
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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KA78T12TU KA78Txx.pdf
KA78T12TU
Hersteller: onsemi
Description: IC REG LINEAR 12V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 67dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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KA278RA05CYDTU KA278RxxC_Series.pdf
KA278RA05CYDTU
Hersteller: onsemi
Description: IC REG LIN POS ADJ 2A TO220F-4L
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Adjustable (Fixed)
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 1.25V (5V)
Voltage - Output (Max): 32V
Supplier Device Package: TO-220F-4L (Forming)
Number of Regulators: 1
Voltage - Input (Max): 35V
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LM317AHVT LM317AHV.pdf
LM317AHVT
Hersteller: onsemi
Description: IC REG LIN POS ADJ 1.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 mA
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 57V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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KA78T05 KA78Txx.pdf
KA78T05
Hersteller: onsemi
Description: IC REG LINEAR 5V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 75dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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KA78T05TU KA78Txx.pdf
KA78T05TU
Hersteller: onsemi
Description: IC REG LINEAR 5V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2.5V @ 3A
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FSA66P5
FSA66P5
Hersteller: onsemi
Description: IC SWITCH SPST-NO X 1 SC70-5
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 6pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 0.05pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-5
-3db Bandwidth: 250MHz
Produkt ist nicht verfügbar
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FQPF17P10 FQPF17P10.pdf
FQPF17P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 10.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FQD5N60CTF fqu5n60c-d.pdf
FQD5N60CTF
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQPF5N40 fqpf5n40-d.pdf
FQPF5N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 3A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MBR1650 MBR1635%20-%2060.pdf
MBR1650
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 16A TO2202
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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FQP9N30 fqp9n30-d.pdf
FQP9N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
10+3.44 EUR
100+2.76 EUR
500+2.27 EUR
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FQB19N20CTM fqb19n20c-d.pdf
FQB19N20CTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 19A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQB5N50CTM fqb5n50c-d.pdf
FQB5N50CTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 5A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 73W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
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FQI19N20CTU
FQI19N20CTU
Hersteller: onsemi
Description: MOSFET N-CH 200V 19A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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FFPF60B150DSTU FFPF60B150DS.pdf
FFPF60B150DSTU
Hersteller: onsemi
Description: DIODE ARRAY 600V 20A TO220F
Current - Max: 20 A
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Voltage - Peak Reverse (Max): 1500V, 600V
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Standard - 1 Pair Series Connection
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Series Connection
Reverse Recovery Time (trr): 350 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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FFPF10U20DPTU FFPF10U20DP.pdf
FFPF10U20DPTU
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 10A TO220F
Produkt ist nicht verfügbar
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FQB3P50TM FQB3P50.pdf
FQB3P50TM
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQI3P50TU FQB3P50.pdf
FQI3P50TU
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.7A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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KA3842AES
Hersteller: onsemi
Description: IC OFFLINE SWITCH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Duty Cycle: 96%
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting
Voltage - Start Up: 16 V
Control Features: Frequency Control
Part Status: Obsolete
Produkt ist nicht verfügbar
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KA3882ED KA3882E%2CKA3883E.pdf
KA3882ED
Hersteller: onsemi
Description: IC OFFLINE SWITCH 8SOIC
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 16 V
Fault Protection: Current Limiting
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Packaging: Tube
Internal Switch(s): No
Frequency - Switching: Up to 500kHz
Duty Cycle: 96%
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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FQD2N100TM fqu2n100-d.pdf
FQD2N100TM
Hersteller: onsemi
Description: MOSFET N-CH 1000V 1.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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HUF76619D3ST HUF76619D3,D3S.pdf
HUF76619D3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 18A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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HUF76619D3S HUF76619D3,D3S.pdf
HUF76619D3S
Hersteller: onsemi
Description: MOSFET N-CH 100V 18A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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HUF76419P3 HUF76419S3ST,%20HUF76419S3S,%20HUF76419P3.pdf
HUF76419P3
Hersteller: onsemi
Description: MOSFET N-CH 60V 29A TO220-3
Produkt ist nicht verfügbar
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HCPL4502SV 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf
HCPL4502SV
Hersteller: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8-SMD
Packaging: Bulk
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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HCPL4502WV 6N135-36%2C%20HCPL-2503%2C30%2C31%2C4502.pdf
HCPL4502WV
Hersteller: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8MDIP
Packaging: Bulk
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-MDIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Produkt ist nicht verfügbar
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JFTJ105 J105,6,7.pdf
JFTJ105
Hersteller: onsemi
Description: JFET N-CH 25V SOT223-4
Current - Drain (Idss) @ Vds (Vgs=0): 500 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4.5 V @ 1 µA
Resistance - RDS(On): 3 Ohms
Power - Max: 1 W
Supplier Device Package: SOT-223-4
Voltage - Breakdown (V(BR)GSS): 25 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQD2N80TF
FQD2N80TF
Hersteller: onsemi
Description: MOSFET N-CH 800V 1.8A DPAK
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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FQPF4P40 FQPF4P40.pdf
FQPF4P40
Hersteller: onsemi
Description: MOSFET P-CH 400V 2.4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.2A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Produkt ist nicht verfügbar
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FQD2N90TM fqu2n90tu_am002-d.pdf
FQD2N90TM
Hersteller: onsemi
Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.08 EUR
5000+1.01 EUR
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FQPF11N40CT
Hersteller: onsemi
Description: MOSFET N-CH 400V 10.5A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FQPF8N60C description fqpf8n60c-d.pdf
FQPF8N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar
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IRL640A irl640a-d.pdf
IRL640A
Hersteller: onsemi
Description: MOSFET N-CH 200V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 5V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1705 pF @ 25 V
Produkt ist nicht verfügbar
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FQB2N90TM FQB2N90.pdf
FQB2N90TM
Hersteller: onsemi
Description: MOSFET N-CH 900V 2.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
Produkt ist nicht verfügbar
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FSAV332MTCX FSAV332.pdf
FSAV332MTCX
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
Produkt ist nicht verfügbar
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FSAV332MTC FSAV332.pdf
FSAV332MTC
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 1X2 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 368MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Obsolete
Number of Channels: 4
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MOCD223R2VM MOCD223M-D.PDF
MOCD223R2VM
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 2CH DARL 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 500% @ 1mA
Vce Saturation (Max): 1V
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 10µs, 125µs
Rise / Fall Time (Typ): 8µs, 110µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.77 EUR
Mindestbestellmenge: 2500 Stücke
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FST3383QSCX FST3383.pdf
FST3383QSCX
Hersteller: onsemi
Description: IC BUS FET EXCHG SW 5X2:2 24QSOP
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
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MOCD223R1VM MOCD223M.pdf
MOCD223R1VM
Hersteller: onsemi
Description: OPTOISOLTR 2.5KV 2CH DARL 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 1µs, 2µs
Turn On / Turn Off Time (Typ): 3.5µs, 95µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 1mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FSAV330QSC FSAV330.pdf
FSAV330QSC
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16QSOP
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-QSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Packaging: Tube
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
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FQB6N60CTM FQB6N60C%2CFQI6N60C.pdf
FQB6N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 5.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
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ISL9R460P2 ISL9R460P2.pdf
ISL9R460P2
Hersteller: onsemi
Description: DIODE GEN PURP 600V 4A TO220-2
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 22 ns
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