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HUF76619D3S

HUF76619D3S Fairchild Semiconductor

FAIRS16053-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 18A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V
auf Bestellung 5406 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1031+0.75 EUR
Mindestbestellmenge: 1031
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Technische Details HUF76619D3S Fairchild Semiconductor

Description: MOSFET N-CH 100V 18A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V.

Weitere Produktangebote HUF76619D3S

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
HUF76619D3S Hersteller : FAIRCHILD HUF76619D3,D3S.pdf FAIRS16053-1.pdf?t.download=true&u=5oefqw TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
HUF76619D3S Hersteller : FAIRCHILD HUF76619D3,D3S.pdf FAIRS16053-1.pdf?t.download=true&u=5oefqw 07+ TO-252
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
HUF76619D3S Hersteller : ONSEMI FAIRS16053-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - HUF76619D3S - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5406 Stücke:
Lieferzeit 14-21 Tag (e)
HUF76619D3S HUF76619D3S Hersteller : onsemi HUF76619D3,D3S.pdf Description: MOSFET N-CH 100V 18A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 767 pF @ 25 V
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