auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.43 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.1 EUR |
| 2000+ | 1.08 EUR |
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Technische Details FQP17P10 onsemi / Fairchild
Description: MOSFET P-CH 100V 16.5A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote FQP17P10 nach Preis ab 0.94 EUR bis 3.43 EUR
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FQP17P10 | Hersteller : onsemi |
 Description: MOSFET P-CH 100V 16.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
auf Bestellung 11980 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP17P10 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 16.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP17P10 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 16.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FQP17P10 | Hersteller : ON Semiconductor |
Trans MOSFET P-CH 100V 16.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |