Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (134277) > Seite 220 nach 2238

Wählen Sie Seite:   [  << Vorherige Seite ]  1 215 216 217 218 219 220 221 222 223 224 225 446 669 892 1115 1338 1561 1784 2007 2230 2238  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SI4542DY SI4542DY onsemi si4542dy-d.pdf Description: MOSFET N/P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
KA3846 KA3846 onsemi KA3846.pdf Description: IC OFFLINE SWITCH 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 6.95V ~ 40V
Supplier Device Package: 16-PDIP
Voltage - Start Up: 7.7 V
Control Features: Current Limit, Enable
Produkt ist nicht verfügbar
FQD18N20V2TF FQD18N20V2TF onsemi Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
FQP22P10 FQP22P10 onsemi FQP22P10.pdf Description: MOSFET P-CH 100V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
FQB8N60CTM FQB8N60CTM onsemi fqi8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar
HUF75332P3 HUF75332P3 onsemi huf75332p3-d.pdf Description: MOSFET N-CH 55V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1317 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.37 EUR
10+ 3.64 EUR
100+ 2.9 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
HUFA76629D3S HUFA76629D3S onsemi HUFA76629D3(S).pdf Description: MOSFET N-CH 100V 20A TO252AA
Produkt ist nicht verfügbar
HUFA76629D3 HUFA76629D3 onsemi HUFA76629D3(S).pdf Description: MOSFET N-CH 100V 20A IPAK
Produkt ist nicht verfügbar
FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
FQP19N20 FQP19N20 onsemi FAIRS45799-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 200V 19.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
HUFA76419S3ST HUFA76419S3ST onsemi HUFA76419P3.pdf Description: MOSFET N-CH 60V 29A D2PAK
Produkt ist nicht verfügbar
FQP44N10 FQP44N10 onsemi FAIRS45811-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 43.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
KBU8B KBU8B onsemi KBU8A-KBU8M_Rev2010_DS.pdf Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
KBU8A KBU8A onsemi KBU8A-KBU8M_Rev2010_DS.pdf Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
FFP20U60DNTU FFP20U60DNTU onsemi FFP20U60.pdf Description: DIODE ARRAY GP 600V 20A TO220
Produkt ist nicht verfügbar
KBU8D KBU8D onsemi KBU8A-KBU8M_Rev2010_DS.pdf Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
FSAL200MTCX FSAL200MTCX onsemi fsal200-d.pdf Description: IC MUX/DEMUX QUAD 2X1 16TSSOP
auf Bestellung 2380 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
10+ 3.46 EUR
25+ 3.28 EUR
100+ 2.7 EUR
250+ 2.52 EUR
500+ 2.23 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 7
FSD210HD FSD210HD onsemi Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 65%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 8.7 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
FSAL200QSCX FSAL200QSCX onsemi fsal200-d.pdf Description: IC MUX/DEMUX QUAD 2X1 16QSOP
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.89 EUR
5000+ 1.82 EUR
Mindestbestellmenge: 2500
HUFA76629D3ST HUFA76629D3ST onsemi HUFA76629D3(S).pdf Description: MOSFET N-CH 100V 20A TO252AA
Produkt ist nicht verfügbar
HUF76419D3 HUF76419D3 onsemi HUF76419D3.pdf Description: MOSFET N-CH 60V 20A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
MMPQ3904 MMPQ3904 onsemi ffb3904-d.pdf Description: TRANS 4NPN 40V 0.2A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
FQA17P10 FQA17P10 onsemi FQA17P10.pdf Description: MOSFET P-CH 100V 18A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
FQB12P20TM FQB12P20TM onsemi fqb12p20-d.pdf Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
MMPQ6700 MMPQ6700 onsemi mmpq6700-d.pdf Description: TRANS 2NPN/2PNP 40V 0.2A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 85000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.38 EUR
5000+ 2.29 EUR
Mindestbestellmenge: 2500
MMPQ3906 MMPQ3906 onsemi mmpq3906-d.pdf Description: TRANS 4PNP 40V 0.2A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
FQI3N90TU FQI3N90TU onsemi FQB3N90.pdf Description: MOSFET N-CH 900V 3.6A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
GBU8K GBU8K onsemi ONSM-S-A0003589389-1.pdf?t.download=true&u=5oefqw Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 4106 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
20+ 3.28 EUR
100+ 2.61 EUR
500+ 2.21 EUR
1000+ 1.87 EUR
2000+ 1.78 EUR
Mindestbestellmenge: 7
FQB3N90TM FQB3N90TM onsemi FQB3N90.pdf Description: MOSFET N-CH 900V 3.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
FQP14N30 FQP14N30 onsemi fqp14n30-d.pdf Description: MOSFET N-CH 300V 14.4A TO220-3
Produkt ist nicht verfügbar
FQB9P25TM FQB9P25TM onsemi fqb9p25-d.pdf Description: MOSFET P-CH 250V 9.4A D2PAK
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+3.32 EUR
Mindestbestellmenge: 800
MMPQ2907 MMPQ2907 onsemi MMPQ2907_Rev_A.pdf Description: TRANS 4PNP 40V 0.6A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Power - Max: 1W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FQB55N06TM FQB55N06TM onsemi FQB55N06%2C%20FQI55N06.pdf Description: MOSFET N-CH 60V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 133W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
KA378R33TU KA378R33TU onsemi Description: IC REG LINEAR 3.3V 3A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 3A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
HGTD1N120BNS9A HGTD1N120BNS9A onsemi hgtd1n120bns-d.pdf Description: IGBT 1200V 5.3A 60W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
Produkt ist nicht verfügbar
FJAF6806DTU FJAF6806DTU onsemi FJAF6806D.pdf Description: TRANS NPN 750V 6A TO3PF
Produkt ist nicht verfügbar
KBU8K KBU8K onsemi KBU8A-KBU8M_Rev2010_DS.pdf Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
HUFA75329P3 HUFA75329P3 onsemi HUFA75329G3,P3,S3S.pdf Description: MOSFET N-CH 55V 49A TO220-3
Produkt ist nicht verfügbar
FQPF65N06 FQPF65N06 onsemi fqpf65n06-d.pdf Description: MOSFET N-CH 60V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Produkt ist nicht verfügbar
HUF75333P3 HUF75333P3 onsemi HUF75333(G3,P3,S3S,S3).pdf Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
FQPF14N30 FQPF14N30 onsemi FQPF14N30.pdf Description: MOSFET N-CH 300V 8.5A TO220F
Produkt ist nicht verfügbar
MBR2550CT MBR2550CT onsemi mbr2560ct-d.pdf Description: DIODE ARR SCHOTT 50V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.84 EUR
10+ 4.02 EUR
100+ 3.2 EUR
500+ 2.71 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 6
MBR2560CT MBR2560CT onsemi mbr2560ct-d.pdf Description: DIODE ARR SCHOTT 60V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 56 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.94 EUR
50+ 3.98 EUR
Mindestbestellmenge: 6
HUF76629D3ST HUF76629D3ST onsemi huf76629d3s-d.pdf Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.87 EUR
5000+ 2.76 EUR
Mindestbestellmenge: 2500
FQB44N10TM FQB44N10TM onsemi FAIR-S-A0000097551-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
FQP6N60 FQP6N60 onsemi FQP6N60.pdf Description: MOSFET N-CH 600V 6.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
FJA4310OTU FJA4310OTU onsemi fja4310-d.pdf Description: TRANS NPN 140V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Produkt ist nicht verfügbar
FQAF22P10 FQAF22P10 onsemi FQAF22P10.pdf Description: MOSFET P-CH 100V 16.6A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
FQAF33N10L FQAF33N10L onsemi FQAF33N10L.pdf Description: MOSFET N-CH 100V 25.8A TO3PF
Produkt ist nicht verfügbar
FQA9P25 FQA9P25 onsemi fqa9p25-d.pdf Description: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.97 EUR
30+ 5.52 EUR
120+ 4.73 EUR
510+ 4.2 EUR
Mindestbestellmenge: 4
FQA22P10 FQA22P10 onsemi FQA22P10.pdf Description: MOSFET P-CH 100V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
KA7630TS onsemi KA7630.pdf Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
KA7632 onsemi KA7632.pdf Description: IC REG LIN 3.3V/5.1V/8V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 1A, 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V
Control Features: Enable, Reset
Part Status: Obsolete
Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
KA7630 onsemi KA7630.pdf Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
FSAV331MTCX FSAV331MTCX onsemi fsav331-d.pdf Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 4:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
FQB19N20TM FQB19N20TM onsemi fqb19n20-d.pdf Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+2.9 EUR
Mindestbestellmenge: 800
HGTP2N120CN HGTP2N120CN onsemi HGTP2N120CN,HGT1SN120CN.pdf Description: IGBT 1200V 13A 104W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
Produkt ist nicht verfügbar
FJAF6806DYDTBTU FJAF6806DYDTBTU onsemi FJAF6806D.pdf Description: TRANS NPN 750V 6A TO3PF
Produkt ist nicht verfügbar
FFP30U60DNTU FFP30U60DNTU onsemi FFP30U60DN.pdf Description: DIODE ARRAY GP 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
FQA12P20 FQA12P20 onsemi FQA12P20.pdf Description: MOSFET P-CH 200V 12.6A TO3P
Produkt ist nicht verfügbar
SI4542DY si4542dy-d.pdf
SI4542DY
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
KA3846 KA3846.pdf
KA3846
Hersteller: onsemi
Description: IC OFFLINE SWITCH 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 70°C (TA)
Frequency - Switching: Up to 500kHz
Internal Switch(s): No
Voltage - Supply (Vcc/Vdd): 6.95V ~ 40V
Supplier Device Package: 16-PDIP
Voltage - Start Up: 7.7 V
Control Features: Current Limit, Enable
Produkt ist nicht verfügbar
FQD18N20V2TF
FQD18N20V2TF
Hersteller: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Produkt ist nicht verfügbar
FQP22P10 FQP22P10.pdf
FQP22P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 22A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
FQB8N60CTM fqi8n60c-d.pdf
FQB8N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar
HUF75332P3 huf75332p3-d.pdf
HUF75332P3
Hersteller: onsemi
Description: MOSFET N-CH 55V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 1317 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
10+ 3.64 EUR
100+ 2.9 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
HUFA76629D3S HUFA76629D3(S).pdf
HUFA76629D3S
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A TO252AA
Produkt ist nicht verfügbar
HUFA76629D3 HUFA76629D3(S).pdf
HUFA76629D3
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A IPAK
Produkt ist nicht verfügbar
FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Produkt ist nicht verfügbar
FQP19N20 FAIRS45799-1.pdf?t.download=true&u=5oefqw
FQP19N20
Hersteller: onsemi
Description: MOSFET N-CH 200V 19.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
HUFA76419S3ST HUFA76419P3.pdf
HUFA76419S3ST
Hersteller: onsemi
Description: MOSFET N-CH 60V 29A D2PAK
Produkt ist nicht verfügbar
FQP44N10 FAIRS45811-1.pdf?t.download=true&u=5oefqw
FQP44N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
KBU8B KBU8A-KBU8M_Rev2010_DS.pdf
KBU8B
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
KBU8A KBU8A-KBU8M_Rev2010_DS.pdf
KBU8A
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Produkt ist nicht verfügbar
FFP20U60DNTU FFP20U60.pdf
FFP20U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 20A TO220
Produkt ist nicht verfügbar
KBU8D KBU8A-KBU8M_Rev2010_DS.pdf
KBU8D
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
FSAL200MTCX fsal200-d.pdf
FSAL200MTCX
Hersteller: onsemi
Description: IC MUX/DEMUX QUAD 2X1 16TSSOP
auf Bestellung 2380 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
10+ 3.46 EUR
25+ 3.28 EUR
100+ 2.7 EUR
250+ 2.52 EUR
500+ 2.23 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 7
FSD210HD
FSD210HD
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 65%
Frequency - Switching: 134kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Current Limiting, Over Load, Over Temperature
Voltage - Start Up: 8.7 V
Part Status: Obsolete
Power (Watts): 7 W
Produkt ist nicht verfügbar
FSAL200QSCX fsal200-d.pdf
FSAL200QSCX
Hersteller: onsemi
Description: IC MUX/DEMUX QUAD 2X1 16QSOP
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.89 EUR
5000+ 1.82 EUR
Mindestbestellmenge: 2500
HUFA76629D3ST HUFA76629D3(S).pdf
HUFA76629D3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A TO252AA
Produkt ist nicht verfügbar
HUF76419D3 HUF76419D3.pdf
HUF76419D3
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
MMPQ3904 ffb3904-d.pdf
MMPQ3904
Hersteller: onsemi
Description: TRANS 4NPN 40V 0.2A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 NPN (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
FQA17P10 FQA17P10.pdf
FQA17P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 18A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
FQB12P20TM fqb12p20-d.pdf
FQB12P20TM
Hersteller: onsemi
Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
MMPQ6700 mmpq6700-d.pdf
MMPQ6700
Hersteller: onsemi
Description: TRANS 2NPN/2PNP 40V 0.2A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 NPN, 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 85000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.38 EUR
5000+ 2.29 EUR
Mindestbestellmenge: 2500
MMPQ3906 mmpq3906-d.pdf
MMPQ3906
Hersteller: onsemi
Description: TRANS 4PNP 40V 0.2A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 16-SOIC
Part Status: Active
Produkt ist nicht verfügbar
FQI3N90TU FQB3N90.pdf
FQI3N90TU
Hersteller: onsemi
Description: MOSFET N-CH 900V 3.6A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
GBU8K ONSM-S-A0003589389-1.pdf?t.download=true&u=5oefqw
GBU8K
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 8A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 4106 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
20+ 3.28 EUR
100+ 2.61 EUR
500+ 2.21 EUR
1000+ 1.87 EUR
2000+ 1.78 EUR
Mindestbestellmenge: 7
FQB3N90TM FQB3N90.pdf
FQB3N90TM
Hersteller: onsemi
Description: MOSFET N-CH 900V 3.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.8A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Produkt ist nicht verfügbar
FQP14N30 fqp14n30-d.pdf
FQP14N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 14.4A TO220-3
Produkt ist nicht verfügbar
FQB9P25TM fqb9p25-d.pdf
FQB9P25TM
Hersteller: onsemi
Description: MOSFET P-CH 250V 9.4A D2PAK
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.32 EUR
Mindestbestellmenge: 800
MMPQ2907 MMPQ2907_Rev_A.pdf
MMPQ2907
Hersteller: onsemi
Description: TRANS 4PNP 40V 0.6A 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 4 PNP (Quad)
Power - Max: 1W
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FQB55N06TM FQB55N06%2C%20FQI55N06.pdf
FQB55N06TM
Hersteller: onsemi
Description: MOSFET N-CH 60V 55A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 27.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 133W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
KA378R33TU
KA378R33TU
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 3A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 3A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
HGTD1N120BNS9A hgtd1n120bns-d.pdf
HGTD1N120BNS9A
Hersteller: onsemi
Description: IGBT 1200V 5.3A 60W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
Produkt ist nicht verfügbar
FJAF6806DTU FJAF6806D.pdf
FJAF6806DTU
Hersteller: onsemi
Description: TRANS NPN 750V 6A TO3PF
Produkt ist nicht verfügbar
KBU8K KBU8A-KBU8M_Rev2010_DS.pdf
KBU8K
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
HUFA75329P3 HUFA75329G3,P3,S3S.pdf
HUFA75329P3
Hersteller: onsemi
Description: MOSFET N-CH 55V 49A TO220-3
Produkt ist nicht verfügbar
FQPF65N06 fqpf65n06-d.pdf
FQPF65N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Produkt ist nicht verfügbar
HUF75333P3 HUF75333(G3,P3,S3S,S3).pdf
HUF75333P3
Hersteller: onsemi
Description: MOSFET N-CH 55V 66A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
FQPF14N30 FQPF14N30.pdf
FQPF14N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 8.5A TO220F
Produkt ist nicht verfügbar
MBR2550CT mbr2560ct-d.pdf
MBR2550CT
Hersteller: onsemi
Description: DIODE ARR SCHOTT 50V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.84 EUR
10+ 4.02 EUR
100+ 3.2 EUR
500+ 2.71 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 6
MBR2560CT mbr2560ct-d.pdf
MBR2560CT
Hersteller: onsemi
Description: DIODE ARR SCHOTT 60V TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 56 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.94 EUR
50+ 3.98 EUR
Mindestbestellmenge: 6
HUF76629D3ST huf76629d3s-d.pdf
HUF76629D3ST
Hersteller: onsemi
Description: MOSFET N-CH 100V 20A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.87 EUR
5000+ 2.76 EUR
Mindestbestellmenge: 2500
FQB44N10TM FAIR-S-A0000097551-1.pdf?t.download=true&u=5oefqw
FQB44N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
FQP6N60 FQP6N60.pdf
FQP6N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 6.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Produkt ist nicht verfügbar
FJA4310OTU fja4310-d.pdf
FJA4310OTU
Hersteller: onsemi
Description: TRANS NPN 140V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 3A, 4V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Produkt ist nicht verfügbar
FQAF22P10 FQAF22P10.pdf
FQAF22P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 16.6A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
FQAF33N10L FQAF33N10L.pdf
FQAF33N10L
Hersteller: onsemi
Description: MOSFET N-CH 100V 25.8A TO3PF
Produkt ist nicht verfügbar
FQA9P25 fqa9p25-d.pdf
FQA9P25
Hersteller: onsemi
Description: MOSFET P-CH 250V 10.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 5.25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.97 EUR
30+ 5.52 EUR
120+ 4.73 EUR
510+ 4.2 EUR
Mindestbestellmenge: 4
FQA22P10 FQA22P10.pdf
FQA22P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
KA7630TS KA7630.pdf
Hersteller: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
KA7632 KA7632.pdf
Hersteller: onsemi
Description: IC REG LIN 3.3V/5.1V/8V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 1A, 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 3.3V, 5.1V, 8V
Control Features: Enable, Reset
Part Status: Obsolete
Voltage Dropout (Max): 2.5V @ 500mA, -, 2.5V @ 500mA
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
KA7630 KA7630.pdf
Hersteller: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
FSAV331MTCX fsav331-d.pdf
FSAV331MTCX
Hersteller: onsemi
Description: IC VIDEO SWITCH DUAL 4X1 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Video
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.75V ~ 5.25V
Multiplexer/Demultiplexer Circuit: 4:1
Part Status: Obsolete
Number of Channels: 2
Produkt ist nicht verfügbar
FQB19N20TM fqb19n20-d.pdf
FQB19N20TM
Hersteller: onsemi
Description: MOSFET N-CH 200V 19.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+2.9 EUR
Mindestbestellmenge: 800
HGTP2N120CN HGTP2N120CN,HGT1SN120CN.pdf
HGTP2N120CN
Hersteller: onsemi
Description: IGBT 1200V 13A 104W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2.6A
Supplier Device Package: TO-220-3
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/205ns
Switching Energy: 96µJ (on), 355µJ (off)
Test Condition: 960V, 2.6A, 51Ohm, 15V
Gate Charge: 30 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 104 W
Produkt ist nicht verfügbar
FJAF6806DYDTBTU FJAF6806D.pdf
FJAF6806DYDTBTU
Hersteller: onsemi
Description: TRANS NPN 750V 6A TO3PF
Produkt ist nicht verfügbar
FFP30U60DNTU FFP30U60DN.pdf
FFP30U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
FQA12P20 FQA12P20.pdf
FQA12P20
Hersteller: onsemi
Description: MOSFET P-CH 200V 12.6A TO3P
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 215 216 217 218 219 220 221 222 223 224 225 446 669 892 1115 1338 1561 1784 2007 2230 2238  [ Nächste Seite >> ]