| Foto | Bezeichnung | Hersteller | Beschreibung |
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FQPF16N25C | onsemi |
 Description: MOSFET N-CH 250V 15.6A TO220FInput Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
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HUFA75309P3 | onsemi |
Description: MOSFET N-CH 55V 19A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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FQD7N30TM | onsemi |
Description: MOSFET N-CH 300V 5.5A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC5603D | onsemi |
Description: TRANS NPN 800V 3A TO220-3 Power - Max: 100 W Voltage - Collector Emitter Breakdown (Max): 800 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-220-3 Frequency - Transition: 5MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
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KSC5603DTU | onsemi |
Description: TRANS NPN 800V 3A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V Frequency - Transition: 5MHz Supplier Device Package: TO-220-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 100 W |
auf Bestellung 1561 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD3P50TM | onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF75617D3ST | onsemi |
Description: MOSFET N-CH 100V 16A TO252AA Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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HUFA76409P3 | onsemi |
Description: MOSFET N-CH 60V 18A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 49W (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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FQD3P50TF | onsemi |
Description: MOSFET P-CH 500V 2.1A DPAK Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FFPF30U60STU | onsemi |
Description: DIODE AVAL 600V 30A TO220F2L Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Avalanche Current - Average Rectified (Io): 30A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
Produkt ist nicht verfügbar |
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FQD7P20TF | onsemi |
Description: MOSFET P-CH 200V 5.7A DPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA |
Produkt ist nicht verfügbar |
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FQU3P50TU | onsemi |
Description: MOSFET P-CH 500V 2.1A IPAK Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FJPF13009TU | onsemi |
Description: TRANS NPN 400V 12A TO220F-3 Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 12 A Supplier Device Package: TO-220F-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
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FQP16N25C | onsemi |
Description: MOSFET N-CH 250V 15.6A TO220-3 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
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FQP3P50 | onsemi |
Description: MOSFET P-CH 500V 2.7A TO220-3 Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V |
auf Bestellung 1645 Stücke: Lieferzeit 10-14 Tag (e) |
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J106_D26Z | onsemi |
Description: JFET N-CH 25V TO92-3 Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA Resistance - RDS(On): 6 Ohms Power - Max: 625 mW Supplier Device Package: TO-92-3 Voltage - Breakdown (V(BR)GSS): 25 V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FQP24N08 | onsemi |
Description: MOSFET N-CH 80V 24A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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KSE5742 | onsemi |
Description: TRANS NPN DARL 400V 8A TO220-3 Power - Max: 80 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-220-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
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H11L3FM | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6-SMD Package / Case: 6-SMD, Gull Wing Packaging: Bulk Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Obsolete Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Rise / Fall Time (Typ): 100ns, 100ns Supplier Device Package: 6-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 30mA Voltage - Isolation: 4170Vrms Input Type: DC Data Rate: 1MHz Voltage - Forward (Vf) (Typ): 1.2V Voltage - Supply: 3V ~ 15V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Open Collector |
Produkt ist nicht verfügbar |
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H11L3FR2M | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6-SMD Voltage - Isolation: 4170Vrms Input Type: DC Data Rate: 1MHz Voltage - Forward (Vf) (Typ): 1.2V Voltage - Supply: 3V ~ 15V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Open Collector Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Obsolete Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Rise / Fall Time (Typ): 100ns, 100ns Supplier Device Package: 6-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 30mA |
Produkt ist nicht verfügbar |
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H11L3FVM | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6SMD |
Produkt ist nicht verfügbar |
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H11L3FR2VM | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6-SMD Mounting Type: Surface Mount Output Type: Open Collector Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) Current - Output / Channel: 50 mA Number of Channels: 1 Part Status: Obsolete Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Rise / Fall Time (Typ): 100ns, 100ns Supplier Device Package: 6-SMD Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 30mA Voltage - Isolation: 4170Vrms Input Type: DC Data Rate: 1MHz Voltage - Forward (Vf) (Typ): 1.2V Voltage - Supply: 3V ~ 15V Operating Temperature: -40°C ~ 85°C |
Produkt ist nicht verfügbar |
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FQD6N40TF | onsemi |
Description: MOSFET N-CH 400V 4.2A DPAK |
Produkt ist nicht verfügbar |
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NDS9925A | onsemi |
Description: MOSFET 2N-CH 20V 4.5A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 20V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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ILC7011AIC529X | onsemi |
Description: IC REG LINEAR 2.9V 80MA SC70-5 Current - Supply (Max): 110 µA Protection Features: Over Temperature Voltage Dropout (Max): 0.25V @ 80mA PSRR: 65dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 2.9V Supplier Device Package: SC-70-5 Number of Regulators: 1 Voltage - Input (Max): 10V Current - Quiescent (Iq): 90 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 80mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FES16AT | onsemi |
Description: DIODE STANDARD 50V 16A TO2202 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 170pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
Produkt ist nicht verfügbar |
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ILC7011AIC528X | onsemi |
Description: IC REG LINEAR 2.8V 80MA SC70-5 Packaging: Tape & Reel (TR) Current - Supply (Max): 110 µA Protection Features: Over Temperature PSRR: 65dB (120Hz) Control Features: Enable Voltage - Output (Min/Fixed): 2.8V Supplier Device Package: SC-70-5 Number of Regulators: 1 Voltage - Input (Max): 10V Current - Quiescent (Iq): 90 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 80mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 5-TSSOP, SC-70-5, SOT-353 |
Produkt ist nicht verfügbar |
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FES16BT | onsemi |
Description: DIODE STANDARD 100V 16A TO2202 Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 170pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
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MTP3055VL | onsemi |
Description: MOSFET N-CH 60V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
auf Bestellung 1693 Stücke: Lieferzeit 10-14 Tag (e) |
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FJP9100TU | onsemi |
Description: TRANS NPN DARL 275V 4A TO220-3 Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 275 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-220-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V Current - Collector Cutoff (Max): 100µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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FQPF3N80C | onsemi |
Description: MOSFET N-CH 800V 3A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V |
auf Bestellung 1090 Stücke: Lieferzeit 10-14 Tag (e) |
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RHRD660S9A | onsemi | Description: DIODE GEN PURP 600V 6A TO252AA |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FFPF10U30DNTU | onsemi |
Description: DIODE ARR AVAL 300V 10A TO220F-3 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220F-3 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Avalanche Reverse Recovery Time (trr): 60 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack |
Produkt ist nicht verfügbar |
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FQP12P10 | onsemi |
Description: MOSFET P-CH 100V 11.5A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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KBU4G | onsemi |
Description: BRIDGE RECT 1PHASE 400V 4A KBU Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 400 V Part Status: Obsolete Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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HUFA76407DK8T | onsemi |
Description: MOSFET 2N-CH 60V 8SOIC Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Drain to Source Voltage (Vdss): 60V Power - Max: 2.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KBU4B | onsemi |
Description: BRIDGE RECT 1PHASE 100V 4A KBU Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 100 V Part Status: Obsolete Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Bulk |
Produkt ist nicht verfügbar |
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FQPF27P06 | onsemi |
Description: MOSFET P-CH 60V 17A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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KBU4D | onsemi |
Description: BRIDGE RECT 1PHASE 200V 4A KBU Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 200 V Part Status: Obsolete Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Bulk |
Produkt ist nicht verfügbar |
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MOCD207R2VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Part Status: Active Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 70V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MOCD207R1VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 1.6µs, 2.2µs Turn On / Turn Off Time (Typ): 3µs, 2.8µs Voltage - Output (Max): 70V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 200% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FQS4901TF | onsemi |
Description: MOSFET 2N-CH 400V 450MA 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Current - Continuous Drain (Id) @ 25°C: 450mA Drain to Source Voltage (Vdss): 400V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MOCD208R2VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 70V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 40% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD213R2VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 1.6µs, 2.2µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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MOCD213VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Packaging: Box Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 1.6µs, 2.2µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD217VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.05V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Part Status: Active Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 30V Supplier Device Package: 8-SOIC Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 1mA |
auf Bestellung 2317 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP30N06L | onsemi |
Description: MOSFET N-CH 60V 32A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQP2N90 | onsemi |
Description: MOSFET N-CH 900V 2.2A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD211VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Box Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 30V Supplier Device Package: 8-SOIC Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 20% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD208R1VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 1.6µs, 2.2µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 70V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 40% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD213R1VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 1.6µs, 2.2µs Part Status: Obsolete Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD211R1VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 30V Supplier Device Package: 8-SOIC Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 20% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD217R1VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Part Status: Obsolete Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 30V Supplier Device Package: 8-SOIC Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 1mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.05V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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MOCD211R2VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 30V Supplier Device Package: 8-SOIC Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 20% @ 10mA Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MOCD208VM | onsemi |
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC Voltage - Isolation: 2500Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Box Current - DC Forward (If) (Max): 60 mA Number of Channels: 2 Rise / Fall Time (Typ): 3.2µs, 4.7µs Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Voltage - Output (Max): 70V Supplier Device Package: 8-SOIC Current Transfer Ratio (Max): 125% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 40% @ 10mA |
Produkt ist nicht verfügbar |
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KSC5504DTM | onsemi |
Description: TRANS NPN 600V 4A TO-252AA Power - Max: 75 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TO-252AA Frequency - Transition: 11MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 2A, 1V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KA278R05CYDTU | onsemi |
Description: IC REG LINEAR 5V 2A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 2A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L (Forming) Voltage - Output (Min/Fixed): 5V Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 2A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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KA278R33CTSTU | onsemi |
Description: IC REG LINEAR 3.3V 2A TO220F-4L Voltage - Input (Max): 35V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: -20°C ~ 80°C Current - Output: 2A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-4 Full Pack Packaging: Tube Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 0.5V @ 2A Part Status: Obsolete Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: TO-220F-4L Number of Regulators: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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FQPF15P12 | onsemi |
Description: MOSFET P-CH 120V 15A TO220F |
auf Bestellung 984 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAV330MTCX | onsemi |
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP Number of Channels: 4 Part Status: Obsolete Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 4V ~ 5.5V Supplier Device Package: 16-TSSOP -3db Bandwidth: 300MHz On-State Resistance (Max): 10Ohm Applications: Video Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQPF16N25C |
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Hersteller: onsemi
Description: MOSFET N-CH 250V 15.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 250V 15.6A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA75309P3 |
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Hersteller: onsemi
Description: MOSFET N-CH 55V 19A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 55V 19A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD7N30TM |
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Hersteller: onsemi
Description: MOSFET N-CH 300V 5.5A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 300V 5.5A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.72 EUR |
| KSC5603D |
|
Hersteller: onsemi
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220-3
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS NPN 800V 3A TO220-3
Power - Max: 100 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-220-3
Frequency - Transition: 5MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSC5603DTU |
|
Hersteller: onsemi
Description: TRANS NPN 800V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 100 W
Description: TRANS NPN 800V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Frequency - Transition: 5MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 100 W
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.29 EUR |
| 50+ | 1.6 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.05 EUR |
| FQD3P50TM |
|
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Description: MOSFET P-CH 500V 2.1A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.86 EUR |
| 5000+ | 0.8 EUR |
| HUF75617D3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 16A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA76409P3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 18A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 49W (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD3P50TF |
|
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 500V 2.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFPF30U60STU |
|
Hersteller: onsemi
Description: DIODE AVAL 600V 30A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE AVAL 600V 30A TO220F2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD7P20TF |
Hersteller: onsemi
Description: MOSFET P-CH 200V 5.7A DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Description: MOSFET P-CH 200V 5.7A DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU3P50TU |
|
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 500V 2.1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJPF13009TU |
|
Hersteller: onsemi
Description: TRANS NPN 400V 12A TO220F-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: TRANS NPN 400V 12A TO220F-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-220F-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP16N25C |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 15.6A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 250V 15.6A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP3P50 |
|
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.7A TO220-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Description: MOSFET P-CH 500V 2.7A TO220-3
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.63 EUR |
| 50+ | 1.77 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |
| J106_D26Z |
|
Hersteller: onsemi
Description: JFET N-CH 25V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA
Resistance - RDS(On): 6 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 25 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Description: JFET N-CH 25V TO92-3
Current - Drain (Idss) @ Vds (Vgs=0): 200 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 µA
Resistance - RDS(On): 6 Ohms
Power - Max: 625 mW
Supplier Device Package: TO-92-3
Voltage - Breakdown (V(BR)GSS): 25 V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP24N08 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 24A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 24A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSE5742 |
|
Hersteller: onsemi
Description: TRANS NPN DARL 400V 8A TO220-3
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS NPN DARL 400V 8A TO220-3
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L3FM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Rise / Fall Time (Typ): 100ns, 100ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 1MHz
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Rise / Fall Time (Typ): 100ns, 100ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 1MHz
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L3FR2M |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 1MHz
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Rise / Fall Time (Typ): 100ns, 100ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 1MHz
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Rise / Fall Time (Typ): 100ns, 100ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L3FVM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6SMD
Description: OPTOISO 4.17KV OPN COLL 6SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11L3FR2VM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Rise / Fall Time (Typ): 100ns, 100ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 1MHz
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Description: OPTOISO 4.17KV OPN COLL 6-SMD
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - Output / Channel: 50 mA
Number of Channels: 1
Part Status: Obsolete
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Rise / Fall Time (Typ): 100ns, 100ns
Supplier Device Package: 6-SMD
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 30mA
Voltage - Isolation: 4170Vrms
Input Type: DC
Data Rate: 1MHz
Voltage - Forward (Vf) (Typ): 1.2V
Voltage - Supply: 3V ~ 15V
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD6N40TF |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 4.2A DPAK
Description: MOSFET N-CH 400V 4.2A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDS9925A |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 4.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 4.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
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| ILC7011AIC529X |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.9V 80MA SC70-5
Current - Supply (Max): 110 µA
Protection Features: Over Temperature
Voltage Dropout (Max): 0.25V @ 80mA
PSRR: 65dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 2.9V 80MA SC70-5
Current - Supply (Max): 110 µA
Protection Features: Over Temperature
Voltage Dropout (Max): 0.25V @ 80mA
PSRR: 65dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.9V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES16AT |
|
Hersteller: onsemi
Description: DIODE STANDARD 50V 16A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Description: DIODE STANDARD 50V 16A TO2202
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ILC7011AIC528X |
|
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 80MA SC70-5
Packaging: Tape & Reel (TR)
Current - Supply (Max): 110 µA
Protection Features: Over Temperature
PSRR: 65dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Description: IC REG LINEAR 2.8V 80MA SC70-5
Packaging: Tape & Reel (TR)
Current - Supply (Max): 110 µA
Protection Features: Over Temperature
PSRR: 65dB (120Hz)
Control Features: Enable
Voltage - Output (Min/Fixed): 2.8V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 10V
Current - Quiescent (Iq): 90 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 80mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES16BT |
|
Hersteller: onsemi
Description: DIODE STANDARD 100V 16A TO2202
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE STANDARD 100V 16A TO2202
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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Stück im Wert von UAH
| MTP3055VL |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Description: MOSFET N-CH 60V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 1693 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.54 EUR |
| 50+ | 1.72 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.14 EUR |
| FJP9100TU |
|
Hersteller: onsemi
Description: TRANS NPN DARL 275V 4A TO220-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 275 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN DARL 275V 4A TO220-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 275 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 500mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 5mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF3N80C |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Description: MOSFET N-CH 800V 3A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.98 EUR |
| 50+ | 1.96 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.3 EUR |
| RHRD660S9A |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Description: DIODE GEN PURP 600V 6A TO252AA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| FFPF10U30DNTU |
|
Hersteller: onsemi
Description: DIODE ARR AVAL 300V 10A TO220F-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Description: DIODE ARR AVAL 300V 10A TO220F-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP12P10 |
|
Hersteller: onsemi
Description: MOSFET P-CH 100V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET P-CH 100V 11.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 5.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU4G |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 400V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 400V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA76407DK8T |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8SOIC
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET 2N-CH 60V 8SOIC
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU4B |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 100V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 100V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF27P06 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET P-CH 60V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 8.5A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.24 EUR |
| 50+ | 2.1 EUR |
| KBU4D |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 200V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 200V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD207R2VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Active
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Active
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD207R1VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Turn On / Turn Off Time (Typ): 3µs, 2.8µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Turn On / Turn Off Time (Typ): 3µs, 2.8µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FQS4901TF |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 400V 450MA 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 450mA
Drain to Source Voltage (Vdss): 400V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 400V 450MA 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 450mA
Drain to Source Voltage (Vdss): 400V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD208R2VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD213R2VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.54 EUR |
| 5000+ | 0.51 EUR |
| 7500+ | 0.5 EUR |
| 12500+ | 0.49 EUR |
| 17500+ | 0.48 EUR |
| 25000+ | 0.47 EUR |
| MOCD213VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD217VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.05V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Active
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.05V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Active
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
auf Bestellung 2317 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 1.8 EUR |
| 50+ | 1.02 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.75 EUR |
| 2000+ | 0.71 EUR |
| FQP30N06L |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 32A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 60V 32A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 16A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP2N90 |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 2.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 900V 2.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD211VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 20% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 20% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD208R1VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOCD213R1VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 1.6µs, 2.2µs
Part Status: Obsolete
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
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| MOCD211R1VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 20% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 20% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| MOCD217R1VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.05V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Part Status: Obsolete
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.05V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
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| MOCD211R2VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 20% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH TRANS 8SOIC
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 30V
Supplier Device Package: 8-SOIC
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 20% @ 10mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| MOCD208VM |
|
Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Box
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 2
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Voltage - Output (Max): 70V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
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| KSC5504DTM |
|
Hersteller: onsemi
Description: TRANS NPN 600V 4A TO-252AA
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 2A, 1V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRANS NPN 600V 4A TO-252AA
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 4 @ 2A, 1V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| KA278R05CYDTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 5V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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| KA278R33CTSTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 2A TO220F-4L
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Description: IC REG LINEAR 3.3V 2A TO220F-4L
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
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| FQPF15P12 |
|
Hersteller: onsemi
Description: MOSFET P-CH 120V 15A TO220F
Description: MOSFET P-CH 120V 15A TO220F
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 10+ | 3.66 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.42 EUR |
| FSAV330MTCX |
|
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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