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KA78R09CTU KA78R09CTU onsemi ka78r12ctu-d.pdf Description: IC REG LINEAR 9V 1A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 1A
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MM74HC154MTC MM74HC154MTC onsemi MM74HC154.pdf Description: IC DECODER 1 X 4:16 24-TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TIP102TSTU TIP102TSTU onsemi TIP100-102.pdf Description: TRANS NPN DARL 100V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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FQP4P25 FQP4P25 onsemi FQP4P25.pdf Description: MOSFET P-CH 250V 4A TO220-3
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FQP3N40 FQP3N40 onsemi FQP3N40.pdf Description: MOSFET N-CH 400V 2.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FQD10N20CTM FQD10N20CTM onsemi fqu10n20c-d.pdf Description: MOSFET N-CH 200V 7.8A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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FQD13N10TM FQD13N10TM onsemi FQD13N10-D.pdf Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQD13N10TF FQD13N10TF onsemi Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQP8P10 FQP8P10 onsemi fqp8p10-d.pdf Description: MOSFET P-CH 100V 8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FQP13N10L FQP13N10L onsemi fqp13n10l-d.pdf Description: MOSFET N-CH 100V 12.8A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
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FQD3N30TM FQD3N30TM onsemi FQD%2C%20FQU3N30.pdf Description: MOSFET N-CH 300V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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H11AA4SM H11AA4SM onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Supplier Device Package: 6-SMD
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.17V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Voltage - Output (Max): 30V
auf Bestellung 878 Stücke:
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500+0.59 EUR
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FQU13N06LTU FQU13N06LTU onsemi FQU13N06L-D.PDF Description: MOSFET N-CH 60V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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FQI4N20LTU FQI4N20LTU onsemi FQB%2CFQI4N20L.pdf Description: MOSFET N-CH 200V 3.8A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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FQP13N10 FQP13N10 onsemi fqp13n10-d.pdf Description: MOSFET N-CH 100V 12.8A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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H11AA4M H11AA4M onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.17V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
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SI4532DY SI4532DY onsemi si4532dy-d.pdf Description: MOSFET N/P-CH 30V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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FQD13N10LTM FQD13N10LTM onsemi fqu13n10l-d.pdf Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4485 Stücke:
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H11AA4SR2VM H11AA4SR2VM onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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FQD13N10LTF FQD13N10LTF onsemi FQD_U13N10L_Rev_March2013.pdf Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
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H11AA4TM H11AA4TM onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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FQD6N25TF FQD6N25TF onsemi Description: MOSFET N-CH 250V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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KA555 KA555 onsemi KA555.pdf description Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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FQP630TSTU FQP630TSTU onsemi FQP630.pdf Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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SGM2N60UFTF SGM2N60UFTF onsemi SGM2N60UF.pdf Description: IGBT 600V 2.4A 2.1W SOT-223
Power - Max: 2.1 W
Current - Collector Pulsed (Icm): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 2.4 A
Gate Charge: 9 nC
Test Condition: 300V, 1.2A, 200Ohm, 15V
Switching Energy: 30µJ (on), 13µJ (off)
Td (on/off) @ 25°C: 15ns/80ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-223-4
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
Produkt ist nicht verfügbar
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FQD5P20TM FQD5P20TM onsemi fqu5p20-d.pdf Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 17500 Stücke:
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FQD5P20TF onsemi Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
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QSB34GR QSB34GR onsemi QSB34-D.PDF Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
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FQD1N80TF FQD1N80TF onsemi Description: MOSFET N-CH 800V 1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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QSB34ZR QSB34ZR onsemi QSB34-D.PDF Description: SENSOR PHOTODIODE 940NM 2SMD
Spectral Range: 730nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Z-Bend
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 32 V
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
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FQD1N80TM FQD1N80TM onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FJP5304DTU FJP5304DTU onsemi fjp5304d-d.pdf Description: TRANS NPN 400V 4A TO220-3
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 250mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 70 W
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MBRP1545NTU MBRP1545NTU onsemi mbrp1545n-d.pdf Description: DIODE ARR SCHOTT 45V 15A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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KSC2335R KSC2335R onsemi KSC2335.pdf Description: TRANS NPN 400V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
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FOD816300W FOD816300W onsemi FOD816.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Supplier Device Package: 4-DIP
Rise / Fall Time (Typ): 60µs, 53µs
Number of Channels: 1
Current - Output / Channel: 80 mA
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KSC2335YTU KSC2335YTU onsemi KSC2335.pdf Description: TRANS NPN 400V 7A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
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FJP3305TU FJP3305TU onsemi fjp3305-d.pdf Description: TRANS NPN 400V 4A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
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KA78R15CTU KA78R15CTU onsemi ka78r12ctu-d.pdf Description: IC REG LINEAR 15V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
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FJP3305H2TU FJP3305H2TU onsemi fjp3305-d.pdf Description: TRANS NPN 400V 4A TO-220-3
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
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FDW262P FDW262P onsemi FDW262P.pdf Description: MOSFET P-CH 20V 4.5A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1193 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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FJP3305H2 FJP3305H2 onsemi fjp3305-d.pdf Description: TRANS NPN 400V 4A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
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FJP3305H1TU FJP3305H1TU onsemi fjp3305-d.pdf Description: TRANS NPN 400V 4A TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FST3384QSCX FST3384QSCX onsemi FST3384.pdf Description: IC BUS SWITCH 5 X 1:1 24QSOP
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 5 x 1:1
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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KSC2335Y KSC2335Y onsemi KSC2335.pdf Description: TRANS NPN 400V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
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FQU20N06LTU FQU20N06LTU onsemi fqu20n06l-d.pdf Description: MOSFET N-CH 60V 17.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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FST3384QSC FST3384QSC onsemi FST3384.pdf Description: IC BUS SWITCH 5 X 1:1 24QSOP
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 5 x 1:1
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tube
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MM74HCT574SJ MM74HCT574SJ onsemi mm74hct573-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20SOP
Type: D-Type
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 30ns @ 5V, 50pF
Supplier Device Package: 20-SOP
Input Capacitance: 10 pF
Clock Frequency: 33 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 7.2mA, 7.2mA
Current - Quiescent (Iq): 8 µA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tube
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LM317D2TXM LM317D2TXM onsemi LM317_Rev_June2005.pdf Description: IC REG LINEAR POS ADJ 1.5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-263 (D2Pak)
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
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FOD816300 FOD816300 onsemi FOD816.pdf Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Supplier Device Package: 4-DIP
Rise / Fall Time (Typ): 60µs, 53µs
Number of Channels: 1
Current - Output / Channel: 80 mA
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SS39 SS39 onsemi ss39-d.pdf Description: DIODE SCHOTTKY 90V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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SSD2007ATF SSD2007ATF onsemi SSD2007A.pdf Description: MOSFET 2N-CH 50V 2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 50V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SSD2007ASTF SSD2007ASTF onsemi SSD2007A.pdf Description: MOSFET 2N-CH 50V 2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 50V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FQD1P50TF FQD1P50TF onsemi FQD1P50.pdf Description: MOSFET P-CH 500V 1.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQP3N30 FQP3N30 onsemi fqp3n30-d.pdf Description: MOSFET N-CH 300V 3.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FQD1P50TM FQD1P50TM onsemi FQD1P50.pdf Description: MOSFET P-CH 500V 1.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQP2N60C FQP2N60C onsemi FQPF2N60C-D.pdf Description: MOSFET N-CH 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
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MM74HC4052WMX MM74HC4052WMX onsemi MM74HC405x.pdf Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel-to-Channel Matching (ΔRon): 15Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 6V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 35MHz
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM74HC4051WMX MM74HC4051WMX onsemi MM74HC405x.pdf Description: IC MUX 8:1 100OHM 16SOIC
Channel-to-Channel Matching (ΔRon): 15Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 6V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 35MHz
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 5pF, 90pF
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Produkt ist nicht verfügbar
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H11AA1SR2M H11AA1SR2M onsemi h11aa4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 27000 Stücke:
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FQD13N06TF FQD13N06TF onsemi Description: MOSFET N-CH 60V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KA78R09CTU ka78r12ctu-d.pdf
KA78R09CTU
Hersteller: onsemi
Description: IC REG LINEAR 9V 1A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 1A
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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MM74HC154MTC MM74HC154.pdf
MM74HC154MTC
Hersteller: onsemi
Description: IC DECODER 1 X 4:16 24-TSSOP
Packaging: Tube
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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TIP102TSTU TIP100-102.pdf
TIP102TSTU
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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FQP4P25 FQP4P25.pdf
FQP4P25
Hersteller: onsemi
Description: MOSFET P-CH 250V 4A TO220-3
Produkt ist nicht verfügbar
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FQP3N40 FQP3N40.pdf
FQP3N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 2.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQD10N20CTM fqu10n20c-d.pdf
FQD10N20CTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 7.8A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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FQD13N10TM FQD13N10-D.pdf
FQD13N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.53 EUR
Mindestbestellmenge: 2500
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FQD13N10TF
FQD13N10TF
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQP8P10 fqp8p10-d.pdf
FQP8P10
Hersteller: onsemi
Description: MOSFET P-CH 100V 8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQP13N10L fqp13n10l-d.pdf
FQP13N10L
Hersteller: onsemi
Description: MOSFET N-CH 100V 12.8A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar
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FQD3N30TM FQD%2C%20FQU3N30.pdf
FQD3N30TM
Hersteller: onsemi
Description: MOSFET N-CH 300V 2.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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H11AA4SM h11aa4m-d.pdf
H11AA4SM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Supplier Device Package: 6-SMD
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.17V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
Voltage - Output (Max): 30V
auf Bestellung 878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
50+0.77 EUR
100+0.71 EUR
500+0.59 EUR
Mindestbestellmenge: 13
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FQU13N06LTU FQU13N06L-D.PDF
FQU13N06LTU
Hersteller: onsemi
Description: MOSFET N-CH 60V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 5.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
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FQI4N20LTU FQB%2CFQI4N20L.pdf
FQI4N20LTU
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.8A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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FQP13N10 fqp13n10-d.pdf
FQP13N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 12.8A TO220-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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H11AA4M h11aa4m-d.pdf
H11AA4M
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.17V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
50+0.77 EUR
100+0.71 EUR
Mindestbestellmenge: 13
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SI4532DY si4532dy-d.pdf
SI4532DY
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 3.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.63 EUR
5000+0.58 EUR
7500+0.56 EUR
12500+0.55 EUR
Mindestbestellmenge: 2500
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FQD13N10LTM fqu13n10l-d.pdf
FQD13N10LTM
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.43 EUR
Mindestbestellmenge: 2500
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H11AA4SR2VM h11aa4m-d.pdf
H11AA4SR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 47000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.6 EUR
2000+0.57 EUR
Mindestbestellmenge: 1000
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FQD13N10LTF FQD_U13N10L_Rev_March2013.pdf
FQD13N10LTF
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
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H11AA4TM h11aa4m-d.pdf
H11AA4TM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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FQD6N25TF
FQD6N25TF
Hersteller: onsemi
Description: MOSFET N-CH 250V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
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KA555 description KA555.pdf
KA555
Hersteller: onsemi
Description: IC OSC SINGLE TIMER 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Type: 555 Type, Timer/Oscillator (Single)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 16V
Supplier Device Package: 8-DIP
Current - Supply: 7.5 mA
Produkt ist nicht verfügbar
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FQP630TSTU FQP630.pdf
FQP630TSTU
Hersteller: onsemi
Description: MOSFET N-CH 200V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
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SGM2N60UFTF SGM2N60UF.pdf
SGM2N60UFTF
Hersteller: onsemi
Description: IGBT 600V 2.4A 2.1W SOT-223
Power - Max: 2.1 W
Current - Collector Pulsed (Icm): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 2.4 A
Gate Charge: 9 nC
Test Condition: 300V, 1.2A, 200Ohm, 15V
Switching Energy: 30µJ (on), 13µJ (off)
Td (on/off) @ 25°C: 15ns/80ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-223-4
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
Produkt ist nicht verfügbar
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FQD5P20TM fqu5p20-d.pdf
FQD5P20TM
Hersteller: onsemi
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.53 EUR
5000+0.49 EUR
Mindestbestellmenge: 2500
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FQD5P20TF
Hersteller: onsemi
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
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QSB34GR QSB34-D.PDF
QSB34GR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Gull Wing
Wavelength: 940nm
Mounting Type: Surface Mount
Diode Type: Pin
Operating Temperature: -25°C ~ 85°C
Response Time: 50ns
Viewing Angle: 120°
Spectral Range: 730nm ~ 1100nm
Active Area: 6.5mm²
Current - Dark (Typ): 30nA
Voltage - DC Reverse (Vr) (Max): 32 V
auf Bestellung 427000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.77 EUR
2000+0.73 EUR
3000+0.71 EUR
5000+0.68 EUR
7000+0.67 EUR
10000+0.66 EUR
Mindestbestellmenge: 1000
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FQD1N80TF
FQD1N80TF
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QSB34ZR QSB34-D.PDF
QSB34ZR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD
Spectral Range: 730nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Z-Bend
Packaging: Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max): 32 V
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Produkt ist nicht verfügbar
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FQD1N80TM fqu1n80-d.pdf
FQD1N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
Mindestbestellmenge: 2500
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FJP5304DTU fjp5304d-d.pdf
FJP5304DTU
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO220-3
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 250mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 70 W
Produkt ist nicht verfügbar
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MBRP1545NTU mbrp1545n-d.pdf
MBRP1545NTU
Hersteller: onsemi
Description: DIODE ARR SCHOTT 45V 15A TO220-3
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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KSC2335R KSC2335.pdf
KSC2335R
Hersteller: onsemi
Description: TRANS NPN 400V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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FOD816300W FOD816.pdf
FOD816300W
Hersteller: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.400", 10.16mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Supplier Device Package: 4-DIP
Rise / Fall Time (Typ): 60µs, 53µs
Number of Channels: 1
Current - Output / Channel: 80 mA
Produkt ist nicht verfügbar
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KSC2335YTU KSC2335.pdf
KSC2335YTU
Hersteller: onsemi
Description: TRANS NPN 400V 7A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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FJP3305TU fjp3305-d.pdf
FJP3305TU
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
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KA78R15CTU ka78r12ctu-d.pdf
KA78R15CTU
Hersteller: onsemi
Description: IC REG LINEAR 15V 1A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 15V
Control Features: Enable
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 1A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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FJP3305H2TU fjp3305-d.pdf
FJP3305H2TU
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO-220-3
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
50+1.39 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7
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FDW262P FDW262P.pdf
FDW262P
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.5A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1193 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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FJP3305H2 fjp3305-d.pdf
FJP3305H2
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 1A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
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FJP3305H1TU fjp3305-d.pdf
FJP3305H1TU
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO-220-3
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
50+1.35 EUR
100+1.21 EUR
Mindestbestellmenge: 7
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FST3384QSCX FST3384.pdf
FST3384QSCX
Hersteller: onsemi
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 5 x 1:1
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KSC2335Y KSC2335.pdf
KSC2335Y
Hersteller: onsemi
Description: TRANS NPN 400V 7A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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FQU20N06LTU fqu20n06l-d.pdf
FQU20N06LTU
Hersteller: onsemi
Description: MOSFET N-CH 60V 17.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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FST3384QSC FST3384.pdf
FST3384QSC
Hersteller: onsemi
Description: IC BUS SWITCH 5 X 1:1 24QSOP
Supplier Device Package: 24-QSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus Switch
Circuit: 5 x 1:1
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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MM74HCT574SJ mm74hct573-d.pdf
MM74HCT574SJ
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20SOP
Type: D-Type
Number of Bits per Element: 8
Max Propagation Delay @ V, Max CL: 30ns @ 5V, 50pF
Supplier Device Package: 20-SOP
Input Capacitance: 10 pF
Clock Frequency: 33 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 7.2mA, 7.2mA
Current - Quiescent (Iq): 8 µA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Standard
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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LM317D2TXM LM317_Rev_June2005.pdf
LM317D2TXM
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 1.5A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 12 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-263 (D2Pak)
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB (120Hz)
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FOD816300 FOD816.pdf
FOD816300
Hersteller: onsemi
Description: OPTOISOLATOR 5KV DARLINGTON 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: Darlington
Mounting Type: Through Hole
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Supplier Device Package: 4-DIP
Rise / Fall Time (Typ): 60µs, 53µs
Number of Channels: 1
Current - Output / Channel: 80 mA
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SS39 ss39-d.pdf
SS39
Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 3A DO214AB
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
6000+0.42 EUR
Mindestbestellmenge: 3000
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SSD2007ATF SSD2007A.pdf
SSD2007ATF
Hersteller: onsemi
Description: MOSFET 2N-CH 50V 2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 50V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SSD2007ASTF SSD2007A.pdf
SSD2007ASTF
Hersteller: onsemi
Description: MOSFET 2N-CH 50V 2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 50V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQD1P50TF FQD1P50.pdf
FQD1P50TF
Hersteller: onsemi
Description: MOSFET P-CH 500V 1.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FQP3N30 fqp3n30-d.pdf
FQP3N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 3.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FQD1P50TM FQD1P50.pdf
FQD1P50TM
Hersteller: onsemi
Description: MOSFET P-CH 500V 1.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FQP2N60C FQPF2N60C-D.pdf
FQP2N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
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MM74HC4052WMX MM74HC405x.pdf
MM74HC4052WMX
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 5pF, 45pF
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Channel-to-Channel Matching (ΔRon): 15Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 6V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 35MHz
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MM74HC4051WMX MM74HC405x.pdf
MM74HC4051WMX
Hersteller: onsemi
Description: IC MUX 8:1 100OHM 16SOIC
Channel-to-Channel Matching (ΔRon): 15Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -50dB @ 1MHz
Voltage - Supply, Dual (V±): ±2V ~ 6V
Voltage - Supply, Single (V+): 2V ~ 6V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 35MHz
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 5pF, 90pF
Switch Time (Ton, Toff) (Max): 41ns, 32ns
Produkt ist nicht verfügbar
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H11AA1SR2M h11aa4m-d.pdf
H11AA1SR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.17V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.58 EUR
2000+0.55 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FQD13N06TF
FQD13N06TF
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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