Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (143777) > Seite 217 nach 2397

Wählen Sie Seite:   [  << Vorherige Seite ]  1 212 213 214 215 216 217 218 219 220 221 222 239 478 717 956 1195 1434 1673 1912 2151 2390 2397  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
KSD5018PWD KSD5018PWD onsemi KSD5018.pdf Description: TRANS NPN DARL 275V 4A TO220-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 275 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA78R33CTSTU KA78R33CTSTU onsemi ka78r12ctu-d.pdf Description: IC REG LINEAR 3.3V 1A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 1A
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD852SD FOD852SD onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 53700 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.63 EUR
2000+0.6 EUR
3000+0.58 EUR
5000+0.56 EUR
7000+0.55 EUR
10000+0.54 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FQP2P40 FQP2P40 onsemi FQP2P40.pdf Description: MOSFET P-CH 400V 2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC154WMX MM74HC154WMX onsemi MM74HC154.pdf Description: IC DECODER 1 X 4:16 24-SOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L272D2 L272D2 onsemi L272_A_Rev_1.0.3.pdf Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Current - Output / Channel: 700 mA
Number of Circuits: 2
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Input Offset: 15 mV
Current - Input Bias: 300 nA
Gain Bandwidth Product: 350 kHz
Slew Rate: 1V/µs
Current - Supply: 8mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply Span (Max): 28 V
Voltage - Supply Span (Min): 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8523SD FOD8523SD onsemi fod852-d.pdf Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.6 EUR
2000+0.57 EUR
3000+0.55 EUR
5000+0.53 EUR
7000+0.52 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FST3253QSCX FST3253QSCX onsemi FST3253.pdf Description: IC MUX/DEMUX 2 X 4:1 16-QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC4060SJX MM74HC4060SJX onsemi MM74HC4060.pdf Description: IC BINARY COUNTER 14-BIT 16SOP
Number of Bits per Element: 14
Count Rate: 30 MHz
Voltage - Supply: 2 V ~ 6 V
Part Status: Obsolete
Supplier Device Package: 16-SOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L272AD2 L272AD2 onsemi L272_A_Rev_1.0.3.pdf Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD2P40TF FQD2P40TF onsemi Description: MOSFET P-CH 400V 1.56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD10N20LTM FQD10N20LTM onsemi fqd10n20l-d.pdf Description: MOSFET N-CH 200V 7.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD10N20LTF FQD10N20LTF onsemi fqd10n20l-d.pdf Description: MOSFET N-CH 200V 7.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD2N50TM FQD2N50TM onsemi FQD2N50TM%2C%20FQD2N50TF.pdf Description: MOSFET N-CH 500V 1.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB8P10TM FQB8P10TM onsemi ONSM-S-A0006944028-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 100V 8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC5305DFTTU KSC5305DFTTU onsemi KSC5305DF.pdf Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB13N10TM FQB13N10TM onsemi FQB13N10, FQI13N10.pdf Description: MOSFET N-CH 100V 12.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75307D3 HUFA75307D3 onsemi HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf Description: MOSFET N-CH 55V 15A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL06 KBL06 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 600V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FYP1010DNTU FYP1010DNTU onsemi fyp1010dn-d.pdf Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
50+1.96 EUR
100+1.76 EUR
500+1.41 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FYP1545DNTU FYP1545DNTU onsemi FYP1545DN.pdf Description: DIODE ARRAY SCHOTTKY 45V TO220
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL04 KBL04 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 400V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL10 KBL10 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75307D3S HUFA75307D3S onsemi HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf Description: MOSFET N-CH 55V 15A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL08 KBL08 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 800V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL005 KBL005 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 50V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL01 KBL01 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 100V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407D3 HUFA76407D3 onsemi HUFA76407D3%2CD3S.pdf Description: MOSFET N-CH 60V 12A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB2N50TM FQB2N50TM onsemi FQB2N50TM.pdf Description: MOSFET N-CH 500V 2.1A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL02 KBL02 onsemi KBL005.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD19N10LTF onsemi Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD19N10LTM FQD19N10LTM onsemi FQD19N10L-D.PDF Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.65 EUR
5000+0.61 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FQD11P06TF onsemi Description: MOSFET P-CH 60V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FYPF1010DNTU FYPF1010DNTU onsemi fypf1010dn-d.pdf Description: DIODE ARR SCHOTT 100V 10A TO220F
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD11P06TM FQD11P06TM onsemi fqu11p06-d.pdf Description: MOSFET P-CH 60V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 142500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.69 EUR
5000+0.64 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FYPF1504DNTU FYPF1504DNTU onsemi FYPF1504DN.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220F
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FYPF1545DNTU FYPF1545DNTU onsemi fypf1545dn-d.pdf Description: DIODE ARRAY SCHOTTKY 45V TO220F
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021RV FJP5021RV onsemi FJP5021R.pdf Description: TRANS NPN 500V 5A TO220-3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021RTU FJP5021RTU onsemi FJP5021R.pdf Description: TRANS NPN 500V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQP5N40 FQP5N40 onsemi FQP5N40.pdf Description: MOSFET N-CH 400V 4.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021O FJP5021O onsemi FJP5021R.pdf Description: TRANS NPN 500V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
QSE773E3R0 QSE773E3R0 onsemi ONSM-S-A0003544406-1.pdf?t.download=true&u=5oefqw Description: SENSOR PHOTODIODE 940NM RADIAL
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -40°C ~ 85°C
Diode Type: Pin
Mounting Type: Through Hole, Right Angle
Wavelength: 940nm
Package / Case: Radial, Side View
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR230ATF IRLR230ATF onsemi IRLR%2CU230A.pdf Description: MOSFET N-CH 200V 7.5A DPAK
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021Y FJP5021Y onsemi FJP5021R.pdf Description: TRANS NPN 500V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA2803BD KA2803BD onsemi Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Supply: 400µA
Applications: Earth Leakage Detector
Voltage - Supply: 12V ~ 20V
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA2803B KA2803B onsemi Description: IC EARTH LEAKAGE DETECTOR 8-DIP
Part Status: Last Time Buy
Supplier Device Package: 8-DIP
Current - Supply: 400µA
Applications: Earth Leakage Detector
Voltage - Supply: 12V ~ 20V
Operating Temperature: -25°C ~ 80°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 2981 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
12+1.57 EUR
50+1.49 EUR
100+1.15 EUR
250+1.01 EUR
500+0.96 EUR
1000+0.75 EUR
2500+0.71 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
KA2807D KA2807D onsemi ka2807-d.pdf Description: IC GROUND FAULT INTERRUPTER 8SOP
Packaging: Tube
Supplier Device Package: 8-SOIC
Current - Supply: 19mA
Applications: Earth Leakage Detector
Operating Temperature: -40°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA2803BDTF KA2803BDTF onsemi Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Part Status: Last Time Buy
Supplier Device Package: 8-SOIC
Current - Supply: 400µA
Applications: Earth Leakage Detector
Voltage - Supply: 12V ~ 20V
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA34063A KA34063A onsemi ka34063-d.pdf Description: IC REG BUCK BOOST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 3V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSB1022TU KSB1022TU onsemi KSB1022.PDF Description: TRANS PNP DARL 60V 7A TO220F-3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220F-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQP9N25CTSTU FQP9N25CTSTU onsemi FQP9N25C%2C%20FQPF9N25C.pdf Description: MOSFET N-CH 250V 8.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
QSB34 onsemi ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw Description: SENSOR PHOTODIODE 940NM AXIAL
Voltage - DC Reverse (Vr) (Max): 32 V
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 730nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 940nm
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD20N06LTF FQD20N06LTF onsemi Description: MOSFET N-CH 60V 17.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407D3ST HUFA76407D3ST onsemi HUFA76407D3%2CD3S.pdf Description: MOSFET N-CH 60V 12A TO252AA
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 38W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75307D3ST HUFA75307D3ST onsemi HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf Description: MOSFET N-CH 55V 15A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQPF17N08L FQPF17N08L onsemi FQPF17N08L.pdf Description: MOSFET N-CH 80V 11.2A TO220F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010OTU KSA1010OTU onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010RTU KSA1010RTU onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010Y KSA1010Y onsemi ksa1010-d.pdf Description: TRANS PNP 100V 7A TO220-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB7N10LTM FQB7N10LTM onsemi FQB7N10L,%20FQI7N10L.pdf Description: MOSFET N-CH 100V 7.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSD5018PWD KSD5018.pdf
KSD5018PWD
Hersteller: onsemi
Description: TRANS NPN DARL 275V 4A TO220-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 275 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA78R33CTSTU ka78r12ctu-d.pdf
KA78R33CTSTU
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 1A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 1A
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 1A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD852SD fod852-d.pdf
FOD852SD
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 53700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.63 EUR
2000+0.6 EUR
3000+0.58 EUR
5000+0.56 EUR
7000+0.55 EUR
10000+0.54 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FQP2P40 FQP2P40.pdf
FQP2P40
Hersteller: onsemi
Description: MOSFET P-CH 400V 2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC154WMX MM74HC154.pdf
MM74HC154WMX
Hersteller: onsemi
Description: IC DECODER 1 X 4:16 24-SOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:16
Type: Decoder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L272D2 L272_A_Rev_1.0.3.pdf
L272D2
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Current - Output / Channel: 700 mA
Number of Circuits: 2
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Voltage - Input Offset: 15 mV
Current - Input Bias: 300 nA
Gain Bandwidth Product: 350 kHz
Slew Rate: 1V/µs
Current - Supply: 8mA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: Standard (General Purpose)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Voltage - Supply Span (Max): 28 V
Voltage - Supply Span (Min): 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FOD8523SD fod852-d.pdf
FOD8523SD
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 1CH DARL 4-SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 1000% @ 1mA
Vce Saturation (Max): 1.2V
Current Transfer Ratio (Max): 15000% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 300V
Rise / Fall Time (Typ): 100µs, 20µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.6 EUR
2000+0.57 EUR
3000+0.55 EUR
5000+0.53 EUR
7000+0.52 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
FST3253QSCX FST3253.pdf
FST3253QSCX
Hersteller: onsemi
Description: IC MUX/DEMUX 2 X 4:1 16-QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 2 x 4:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-QSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC4060SJX MM74HC4060.pdf
MM74HC4060SJX
Hersteller: onsemi
Description: IC BINARY COUNTER 14-BIT 16SOP
Number of Bits per Element: 14
Count Rate: 30 MHz
Voltage - Supply: 2 V ~ 6 V
Part Status: Obsolete
Supplier Device Package: 16-SOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
L272AD2 L272_A_Rev_1.0.3.pdf
L272AD2
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 16SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD2P40TF
FQD2P40TF
Hersteller: onsemi
Description: MOSFET P-CH 400V 1.56A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD10N20LTM fqd10n20l-d.pdf
FQD10N20LTM
Hersteller: onsemi
Description: MOSFET N-CH 200V 7.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD10N20LTF fqd10n20l-d.pdf
FQD10N20LTF
Hersteller: onsemi
Description: MOSFET N-CH 200V 7.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 51W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD2N50TM FQD2N50TM%2C%20FQD2N50TF.pdf
FQD2N50TM
Hersteller: onsemi
Description: MOSFET N-CH 500V 1.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB8P10TM ONSM-S-A0006944028-1.pdf?t.download=true&u=5oefqw
FQB8P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 530mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSC5305DFTTU KSC5305DF.pdf
KSC5305DFTTU
Hersteller: onsemi
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB13N10TM FQB13N10, FQI13N10.pdf
FQB13N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 12.8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75307D3 HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf
HUFA75307D3
Hersteller: onsemi
Description: MOSFET N-CH 55V 15A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL06 KBL005.pdf
KBL06
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 600V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FYP1010DNTU fyp1010dn-d.pdf
FYP1010DNTU
Hersteller: onsemi
Description: DIODE ARR SCHOT 100V 10A TO2203
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.03 EUR
50+1.96 EUR
100+1.76 EUR
500+1.41 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
FYP1545DNTU FYP1545DN.pdf
FYP1545DNTU
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 45V TO220
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL04 KBL005.pdf
KBL04
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 400V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL10 KBL005.pdf
KBL10
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 1KV 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75307D3S HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf
HUFA75307D3S
Hersteller: onsemi
Description: MOSFET N-CH 55V 15A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL08 KBL005.pdf
KBL08
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL005 KBL005.pdf
KBL005
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 50V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL01 KBL005.pdf
KBL01
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 100V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407D3 HUFA76407D3%2CD3S.pdf
HUFA76407D3
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB2N50TM FQB2N50TM.pdf
FQB2N50TM
Hersteller: onsemi
Description: MOSFET N-CH 500V 2.1A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBL02 KBL005.pdf
KBL02
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 200V 4A KBL
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: KBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBL
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD19N10LTF
Hersteller: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD19N10LTM FQD19N10L-D.PDF
FQD19N10LTM
Hersteller: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.65 EUR
5000+0.61 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FQD11P06TF
Hersteller: onsemi
Description: MOSFET P-CH 60V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FYPF1010DNTU fypf1010dn-d.pdf
FYPF1010DNTU
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 10A TO220F
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD11P06TM fqu11p06-d.pdf
FQD11P06TM
Hersteller: onsemi
Description: MOSFET P-CH 60V 9.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 142500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.69 EUR
5000+0.64 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FYPF1504DNTU FYPF1504DN.pdf
FYPF1504DNTU
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 40V TO220F
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220F-3
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FYPF1545DNTU fypf1545dn-d.pdf
FYPF1545DNTU
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 45V TO220F
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-3
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021RV FJP5021R.pdf
FJP5021RV
Hersteller: onsemi
Description: TRANS NPN 500V 5A TO220-3
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021RTU FJP5021R.pdf
FJP5021RTU
Hersteller: onsemi
Description: TRANS NPN 500V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQP5N40 FQP5N40.pdf
FQP5N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 4.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021O FJP5021R.pdf
FJP5021O
Hersteller: onsemi
Description: TRANS NPN 500V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
QSE773E3R0 ONSM-S-A0003544406-1.pdf?t.download=true&u=5oefqw
QSE773E3R0
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM RADIAL
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -40°C ~ 85°C
Diode Type: Pin
Mounting Type: Through Hole, Right Angle
Wavelength: 940nm
Package / Case: Radial, Side View
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR230ATF IRLR%2CU230A.pdf
IRLR230ATF
Hersteller: onsemi
Description: MOSFET N-CH 200V 7.5A DPAK
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.75A, 5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FJP5021Y FJP5021R.pdf
FJP5021Y
Hersteller: onsemi
Description: TRANS NPN 500V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 600mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA2803BD
KA2803BD
Hersteller: onsemi
Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Current - Supply: 400µA
Applications: Earth Leakage Detector
Voltage - Supply: 12V ~ 20V
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA2803B
KA2803B
Hersteller: onsemi
Description: IC EARTH LEAKAGE DETECTOR 8-DIP
Part Status: Last Time Buy
Supplier Device Package: 8-DIP
Current - Supply: 400µA
Applications: Earth Leakage Detector
Voltage - Supply: 12V ~ 20V
Operating Temperature: -25°C ~ 80°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 2981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
12+1.57 EUR
50+1.49 EUR
100+1.15 EUR
250+1.01 EUR
500+0.96 EUR
1000+0.75 EUR
2500+0.71 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
KA2807D ka2807-d.pdf
KA2807D
Hersteller: onsemi
Description: IC GROUND FAULT INTERRUPTER 8SOP
Packaging: Tube
Supplier Device Package: 8-SOIC
Current - Supply: 19mA
Applications: Earth Leakage Detector
Operating Temperature: -40°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA2803BDTF
KA2803BDTF
Hersteller: onsemi
Description: IC EARTH LEAKAGE DETECTOR 8-SOP
Part Status: Last Time Buy
Supplier Device Package: 8-SOIC
Current - Supply: 400µA
Applications: Earth Leakage Detector
Voltage - Supply: 12V ~ 20V
Operating Temperature: -25°C ~ 80°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KA34063A ka34063-d.pdf
KA34063A
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100Hz ~ 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Input (Min): 3V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSB1022TU KSB1022.PDF
KSB1022TU
Hersteller: onsemi
Description: TRANS PNP DARL 60V 7A TO220F-3
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220F-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 2V @ 14mA, 7A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQP9N25CTSTU FQP9N25C%2C%20FQPF9N25C.pdf
FQP9N25CTSTU
Hersteller: onsemi
Description: MOSFET N-CH 250V 8.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
QSB34 ONSM-S-A0003544331-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM AXIAL
Voltage - DC Reverse (Vr) (Max): 32 V
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 730nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Through Hole
Wavelength: 940nm
Package / Case: Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD20N06LTF
FQD20N06LTF
Hersteller: onsemi
Description: MOSFET N-CH 60V 17.2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA76407D3ST HUFA76407D3%2CD3S.pdf
HUFA76407D3ST
Hersteller: onsemi
Description: MOSFET N-CH 60V 12A TO252AA
Rds On (Max) @ Id, Vgs: 92mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 38W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75307D3ST HUFA75307P3%2C%20HUFA75307D3S%2C%20HUFA75307D3.pdf
HUFA75307D3ST
Hersteller: onsemi
Description: MOSFET N-CH 55V 15A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQPF17N08L FQPF17N08L.pdf
FQPF17N08L
Hersteller: onsemi
Description: MOSFET N-CH 80V 11.2A TO220F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010OTU ksa1010-d.pdf
KSA1010OTU
Hersteller: onsemi
Description: TRANS PNP 100V 7A TO220-3
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010RTU ksa1010-d.pdf
KSA1010RTU
Hersteller: onsemi
Description: TRANS PNP 100V 7A TO220-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KSA1010Y ksa1010-d.pdf
KSA1010Y
Hersteller: onsemi
Description: TRANS PNP 100V 7A TO220-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 7 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 3A, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 500mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQB7N10LTM FQB7N10L,%20FQI7N10L.pdf
FQB7N10LTM
Hersteller: onsemi
Description: MOSFET N-CH 100V 7.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 3.65A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 212 213 214 215 216 217 218 219 220 221 222 239 478 717 956 1195 1434 1673 1912 2151 2390 2397  [ Nächste Seite >> ]