| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
KA278R33CYDTU | onsemi |
 Description: IC REG LINEAR 3.3V 2A TO220F-4LVoltage - Input (Max): 35V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: -20°C ~ 80°C Current - Output: 2A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-4 Full Pack, Formed Leads Packaging: Tube Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 0.5V @ 2A Part Status: Obsolete Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: TO-220F-4L (Forming) Number of Regulators: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| QEB441TR | onsemi |
Description: EMITTER VISIBLE 730NM 100MA PLCC Radiant Intensity (Ie) Min @ If: 2mW/sr @ 100mA Current - DC Forward (If) (Max): 100mA Viewing Angle: 120° Voltage - Forward (Vf) (Typ): 2.1V Operating Temperature: -55°C ~ 100°C (TA) Orientation: Top View Type: Visible Mounting Type: Surface Mount Wavelength: 730nm Package / Case: 2-PLCC Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
 |
FSAV330MX | onsemi |
Description: IC VIDEO SWITCH QUAD 2X1 16SOIC Number of Channels: 4 Part Status: Obsolete Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 4V ~ 5.5V Supplier Device Package: 16-SOIC -3db Bandwidth: 300MHz On-State Resistance (Max): 10Ohm Applications: Video Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
KA278R12CYDTU | onsemi |
Description: IC REG LINEAR 12V 2A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 2A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L (Forming) Voltage - Output (Min/Fixed): 12V Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 2A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
KA278R12CTSTU | onsemi |
Description: IC REG LINEAR 12V 2A TO220F-4L Packaging: Tube Package / Case: TO-220-4 Full Pack Output Type: Fixed Mounting Type: Through Hole Current - Output: 2A Operating Temperature: -20°C ~ 80°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220F-4L Voltage - Output (Min/Fixed): 12V Part Status: Obsolete Voltage Dropout (Max): 0.5V @ 2A Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KA278R09CYDTU | onsemi |
Description: IC REG LINEAR 9V 2A TO220F-4L Voltage - Input (Max): 35V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: -20°C ~ 80°C Current - Output: 2A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-4 Full Pack, Formed Leads Packaging: Tube Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 0.5V @ 2A Part Status: Obsolete Voltage - Output (Min/Fixed): 9V Supplier Device Package: TO-220F-4L (Forming) Number of Regulators: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KA278R09CTU | onsemi |
Description: IC REG LINEAR 9V 2A TO220F-4L Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 0.5V @ 2A Part Status: Obsolete Voltage - Output (Min/Fixed): 9V Supplier Device Package: TO-220F-4L Number of Regulators: 1 Voltage - Input (Max): 35V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: -20°C ~ 80°C Current - Output: 2A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-4 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KA278R51CTU | onsemi |
Description: IC REG LINEAR 5.1V 2A TO220F-4L Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit Voltage Dropout (Max): 0.5V @ 2A Part Status: Obsolete Voltage - Output (Min/Fixed): 5.1V Supplier Device Package: TO-220F-4L Number of Regulators: 1 Voltage - Input (Max): 35V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: -20°C ~ 80°C Current - Output: 2A Mounting Type: Through Hole Output Type: Fixed Package / Case: TO-220-4 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FDW2507NZ | onsemi |
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FSAV330MTC | onsemi |
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP Number of Channels: 4 Part Status: Obsolete Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Voltage - Supply, Single (V+): 4V ~ 5.5V Supplier Device Package: 16-TSSOP -3db Bandwidth: 300MHz On-State Resistance (Max): 10Ohm Applications: Video Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQD2N100TF | onsemi |
Description: MOSFET N-CH 1000V 1.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
SSD2025TF | onsemi |
Description: MOSFET 2N-CH 60V 3.3A 8SOIC Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQB10N20TM | onsemi |
Description: MOSFET N-CH 200V 10A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FFPF10U150STU | onsemi |
Description: DIODE AVAL 1500V 10A TO220F2L Current - Reverse Leakage @ Vr: 15 µA @ 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1500 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220F-2L Current - Average Rectified (Io): 10A Technology: Avalanche Reverse Recovery Time (trr): 150 ns Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQP7N40 | onsemi |
Description: MOSFET N-CH 400V 7A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
KBU4J | onsemi |
Description: BRIDGE RECT 1PHASE 600V 4A KBU Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 600 V Part Status: Obsolete Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
KBU4M | onsemi |
Description: BRIDGE RECT 1PHASE 1KV 4A KBU Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KBU4K | onsemi |
Description: BRIDGE RECT 1PHASE 800V 4A KBU Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Average Rectified (Io): 4 A Voltage - Peak Reverse (Max): 800 V Part Status: Obsolete Supplier Device Package: KBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, KBU Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FEP16JT | onsemi |
Description: DIODE ARRAY GP 600V 16A TO220-3 Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16AT | onsemi |
Description: DIODE ARRAY GP 50V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16BT | onsemi |
Description: DIODE ARRAY GP 100V 16A TO220-3 Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16ATA | onsemi |
Description: DIODE ARRAY GP 50V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16FT | onsemi |
Description: DIODE ARRAY GP 300V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16DTD | onsemi |
Description: DIODE ARRAY GP 200V 8A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 8A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16BTD | onsemi |
Description: DIODE ARRAY GP 100V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16CTA | onsemi |
Description: DIODE ARRAY GP 150V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KSE5741TU | onsemi |
Description: TRANS NPN DARL 350V 8A TO-220-3 Power - Max: 80 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-220-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16GT | onsemi |
Description: DIODE ARRAY GP 400V 16A TO-220-3 Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16DTA | onsemi |
Description: DIODE ARRAY GP 200V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16HT | onsemi |
Description: DIODE ARRAY GP 500V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Tube Mounting Type: Through Hole Package / Case: TO-220-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16DT | onsemi |
Description: DIODE ARRAY GP 200V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FES16BTR | onsemi |
Description: DIODE STANDARD 100V 16A TO2202 Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 170pF @ 4V, 1MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FST3383MTCX | onsemi |
Description: IC BUS FET EXCH SW 5X2:2 24TSSOP Supplier Device Package: 24-TSSOP Voltage Supply Source: Single Supply Independent Circuits: 1 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Bus FET Exchange Switch Circuit: 5 x 2:2 Mounting Type: Surface Mount Package / Case: 24-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FJP5355TU | onsemi |
Description: TRANS NPN 440V 5A TO220-3 Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector (Ic) (Max): 5 A Part Status: Obsolete Supplier Device Package: TO-220-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 2.5A, 2V Vce Saturation (Max) @ Ib, Ic: 400mV @ 800mA, 2.5A Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQPF7P20 | onsemi |
Description: MOSFET P-CH 200V 5.2A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 690mOhm @ 2.6A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V |
auf Bestellung 1781 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FQB17P10TM | onsemi |
Description: MOSFET P-CH 100V 16.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
HUFA75617D3S | onsemi |
Description: MOSFET N-CH 100V 16A TO252AA Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KA317 | onsemi |
Description: IC REG LIN POS ADJ 1.5A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 1.5A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): 37V Voltage - Output (Min/Fixed): 1.2V Part Status: Obsolete PSRR: 75dB ~ 60dB (120Hz) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FQD4P40TF | onsemi |
Description: MOSFET P-CH 400V 2.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FQD4P40TM | onsemi |
Description: MOSFET P-CH 400V 2.7A DPAK Part Status: Last Time Buy Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
HUFA76413P3 | onsemi |
Description: MOSFET N-CH 60V 23A TO220-3 Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 60 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQU5N60CTU | onsemi |
Description: MOSFET N-CH 600V 2.8A IPAK Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
KA78RH33RTF | onsemi |
Description: IC REG LINEAR 3.3V 800MA TO252-3 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 1.4V @ 800mA PSRR: 55dB (120Hz) Part Status: Obsolete Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: DPAK Number of Regulators: 1 Voltage - Input (Max): 15V Current - Quiescent (Iq): 10 mA Output Configuration: Positive Operating Temperature: -25°C ~ 125°C Current - Output: 800mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KA78RM33TU | onsemi |
Description: IC REG LINEAR 3.3V 500MA TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQP4P40 | onsemi |
Description: MOSFET P-CH 400V 3.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.75A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
KA78RM33TSTU | onsemi |
Description: IC REG LINEAR 3.3V 500MA TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 10 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16HTD | onsemi |
Description: DIODE ARRAY GP 500V 16A TO220-3 Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16GTA | onsemi |
Description: DIODE ARRAY GP 400V 16A TO-220-3 Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16FTD | onsemi |
Description: DIODE ARRAY GP 300V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 300 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16GTD | onsemi |
Description: DIODE ARRAY GP 400V 16A TO-220-3 Current - Reverse Leakage @ Vr: 10 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FEP16HTA | onsemi |
Description: DIODE ARRAY GP 500V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Voltage - DC Reverse (Vr) (Max): 500 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Common Anode Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
GBU6D | onsemi |
Description: BRIDGE RECT 1PHASE 200V 6A GBU Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Average Rectified (Io): 6 A Voltage - Peak Reverse (Max): 200 V Supplier Device Package: GBU Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
auf Bestellung 1262 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FEP16CTD | onsemi |
Description: DIODE ARRAY GP 150V 16A TO220-3 Current - Reverse Leakage @ Vr: 10 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 16A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
HUF75617D3S | onsemi |
Description: MOSFET N-CH 100V 16A TO252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FDW264P | onsemi |
Description: MOSFET P-CH 20V 9.7A 8TSSOP Input Capacitance (Ciss) (Max) @ Vds: 7225 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
 |
FQPF2NA90 | onsemi |
Description: MOSFET N-CH 900V 1.7A TO220F Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 5.8Ohm @ 850mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
FQP4N90C | onsemi |
Description: MOSFET N-CH 900V 4A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
HUFA75617D3ST | onsemi |
Description: MOSFET N-CH 100V 16A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
|
|
MBR1560CT | onsemi |
Description: DIODE ARR SCHOTT 60V 15A TO2203 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
auf Bestellung 1527 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
FQPF50N06 | onsemi |
Description: MOSFET N-CH 60V 31A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 15.5A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KA278R33CYDTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 2A TO220F-4L
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220F-4L (Forming)
Number of Regulators: 1
Description: IC REG LINEAR 3.3V 2A TO220F-4L
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: TO-220F-4L (Forming)
Number of Regulators: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| QEB441TR |
|
Hersteller: onsemi
Description: EMITTER VISIBLE 730NM 100MA PLCC
Radiant Intensity (Ie) Min @ If: 2mW/sr @ 100mA
Current - DC Forward (If) (Max): 100mA
Viewing Angle: 120°
Voltage - Forward (Vf) (Typ): 2.1V
Operating Temperature: -55°C ~ 100°C (TA)
Orientation: Top View
Type: Visible
Mounting Type: Surface Mount
Wavelength: 730nm
Package / Case: 2-PLCC
Packaging: Tape & Reel (TR)
Description: EMITTER VISIBLE 730NM 100MA PLCC
Radiant Intensity (Ie) Min @ If: 2mW/sr @ 100mA
Current - DC Forward (If) (Max): 100mA
Viewing Angle: 120°
Voltage - Forward (Vf) (Typ): 2.1V
Operating Temperature: -55°C ~ 100°C (TA)
Orientation: Top View
Type: Visible
Mounting Type: Surface Mount
Wavelength: 730nm
Package / Case: 2-PLCC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSAV330MX |
|
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16SOIC
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC VIDEO SWITCH QUAD 2X1 16SOIC
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA278R12CYDTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 12V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 12V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L (Forming)
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA278R12CTSTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 12V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 12V 2A TO220F-4L
Packaging: Tube
Package / Case: TO-220-4 Full Pack
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 2A
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220F-4L
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Voltage Dropout (Max): 0.5V @ 2A
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA278R09CYDTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 9V 2A TO220F-4L
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-220F-4L (Forming)
Number of Regulators: 1
Description: IC REG LINEAR 9V 2A TO220F-4L
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack, Formed Leads
Packaging: Tube
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-220F-4L (Forming)
Number of Regulators: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA278R09CTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 9V 2A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Description: IC REG LINEAR 9V 2A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 9V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA278R51CTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 5.1V 2A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5.1V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Description: IC REG LINEAR 5.1V 2A TO220F-4L
Protection Features: Over Current, Over Temperature, Over Voltage, Short Circuit
Voltage Dropout (Max): 0.5V @ 2A
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5.1V
Supplier Device Package: TO-220F-4L
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -20°C ~ 80°C
Current - Output: 2A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-4 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDW2507NZ |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
Description: MOSFET 2N-CH 20V 7.5A 8-TSSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSAV330MTC |
|
Hersteller: onsemi
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Description: IC VIDEO SWITCH QUAD 2X1 16TSSOP
Number of Channels: 4
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 4V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 300MHz
On-State Resistance (Max): 10Ohm
Applications: Video
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD2N100TF |
|
Hersteller: onsemi
Description: MOSFET N-CH 1000V 1.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 800mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSD2025TF |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 3.3A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 60V 3.3A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQB10N20TM |
Hersteller: onsemi
Description: MOSFET N-CH 200V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 200V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFPF10U150STU |
|
Hersteller: onsemi
Description: DIODE AVAL 1500V 10A TO220F2L
Current - Reverse Leakage @ Vr: 15 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 10A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE AVAL 1500V 10A TO220F2L
Current - Reverse Leakage @ Vr: 15 µA @ 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1500 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 10A
Technology: Avalanche
Reverse Recovery Time (trr): 150 ns
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP7N40 |
|
Hersteller: onsemi
Description: MOSFET N-CH 400V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 400V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU4J |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 600V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 600V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU4M |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 1KV 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 1KV 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KBU4K |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Description: BRIDGE RECT 1PHASE 800V 4A KBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Obsolete
Supplier Device Package: KBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, KBU
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16JT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 16A TO220-3
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 16A TO220-3
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16AT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 50V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 50V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16BT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 16A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE ARRAY GP 100V 16A TO220-3
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16ATA |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 50V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 50V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16FT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 300V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 300V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16DTD |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 8A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 200V 8A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16BTD |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 100V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16CTA |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 150V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 150V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSE5741TU |
|
Hersteller: onsemi
Description: TRANS NPN DARL 350V 8A TO-220-3
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN DARL 350V 8A TO-220-3
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4A, 5V
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16GT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16DTA |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 200V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16HT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 500V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Description: DIODE ARRAY GP 500V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16DT |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 200V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FES16BTR |
|
Hersteller: onsemi
Description: DIODE STANDARD 100V 16A TO2202
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Description: DIODE STANDARD 100V 16A TO2202
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FST3383MTCX |
|
Hersteller: onsemi
Description: IC BUS FET EXCH SW 5X2:2 24TSSOP
Supplier Device Package: 24-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUS FET EXCH SW 5X2:2 24TSSOP
Supplier Device Package: 24-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Bus FET Exchange Switch
Circuit: 5 x 2:2
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJP5355TU |
|
Hersteller: onsemi
Description: TRANS NPN 440V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 2.5A, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 800mA, 2.5A
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 440V 5A TO220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 7 @ 2.5A, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 800mA, 2.5A
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF7P20 |
|
Hersteller: onsemi
Description: MOSFET P-CH 200V 5.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Description: MOSFET P-CH 200V 5.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 2.6A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
auf Bestellung 1781 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.87 EUR |
| 50+ | 1.9 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.27 EUR |
| FQB17P10TM |
|
Hersteller: onsemi
Description: MOSFET P-CH 100V 16.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 16.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA75617D3S |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A TO252AA
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Description: MOSFET N-CH 100V 16A TO252AA
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA317 |
|
Hersteller: onsemi
Description: IC REG LIN POS ADJ 1.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB ~ 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LIN POS ADJ 1.5A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 1.5A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 75dB ~ 60dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD4P40TF |
|
Hersteller: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 400V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD4P40TM |
|
Hersteller: onsemi
Description: MOSFET P-CH 400V 2.7A DPAK
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET P-CH 400V 2.7A DPAK
Part Status: Last Time Buy
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA76413P3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 23A TO220-3
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 23A TO220-3
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQU5N60CTU |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 600V 2.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA78RH33RTF |
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 800MA TO252-3
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.4V @ 800mA
PSRR: 55dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: DPAK
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -25°C ~ 125°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 3.3V 800MA TO252-3
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 1.4V @ 800mA
PSRR: 55dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: DPAK
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: -25°C ~ 125°C
Current - Output: 800mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA78RM33TU |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Description: IC REG LINEAR 3.3V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP4P40 |
|
Hersteller: onsemi
Description: MOSFET P-CH 400V 3.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.75A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Description: MOSFET P-CH 400V 3.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.75A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KA78RM33TSTU |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Description: IC REG LINEAR 3.3V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16HTD |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 500V 16A TO220-3
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Description: DIODE ARRAY GP 500V 16A TO220-3
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16GTA |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16FTD |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 300V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 300V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 300 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16GTD |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 400V 16A TO-220-3
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FEP16HTA |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 500V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY GP 500V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 500 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBU6D |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 200V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: BRIDGE RECT 1PHASE 200V 6A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Average Rectified (Io): 6 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
auf Bestellung 1262 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.08 EUR |
| 20+ | 2.12 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.23 EUR |
| FEP16CTD |
|
Hersteller: onsemi
Description: DIODE ARRAY GP 150V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Description: DIODE ARRAY GP 150V 16A TO220-3
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF75617D3S |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Description: MOSFET N-CH 100V 16A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDW264P |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 9.7A 8TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 7225 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 9.7A 8TSSOP
Input Capacitance (Ciss) (Max) @ Vds: 7225 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQPF2NA90 |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 1.7A TO220F
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.8Ohm @ 850mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Description: MOSFET N-CH 900V 1.7A TO220F
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 5.8Ohm @ 850mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQP4N90C |
|
Hersteller: onsemi
Description: MOSFET N-CH 900V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Description: MOSFET N-CH 900V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA75617D3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A TO252AA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Description: MOSFET N-CH 100V 16A TO252AA
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR1560CT |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 60V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE ARR SCHOTT 60V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
auf Bestellung 1527 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.4 EUR |
| 50+ | 1.65 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.09 EUR |
| FQPF50N06 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 31A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15.5A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
Description: MOSFET N-CH 60V 31A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15.5A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH