FQP13N10 ON Semiconductor

Description: MOSFET N-CH 100V 12.8A TO220-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 65W (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc), FET Type: N-Channel.