FQD10N20CTM ON-Semiconductor
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 200V; 30V; 360mOhm; 7,8A; 50W; -55°C ~ 150°C; OBSOLETE; FQD10N20CTM-VB; TPM2007NK3; FQD10N20CTM-JSM; FQD10N20CTM Fairchild TFQD10n20ctm
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 1.99 EUR |
Produktrezensionen
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Technische Details FQD10N20CTM ON-Semiconductor
Description: MOSFET N-CH 200V 7.8A DPAK, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote FQD10N20CTM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FQD10N20CTM | On Semiconductor |
MOSFET N-CH 200V 7.8A DPAK Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
FQD10N20CTM | onsemi |
Description: MOSFET N-CH 200V 7.8A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FQD10N20CTM | onsemi / Fairchild |
MOSFET N-CH/200V/10A/QFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQD10N20CTM |
|
Hersteller: On Semiconductor
MOSFET N-CH 200V 7.8A DPAK Транзистори
MOSFET N-CH 200V 7.8A DPAK Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD10N20CTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 200V 7.8A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 200V 7.8A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD10N20CTM |
|
Hersteller: onsemi / Fairchild
MOSFET N-CH/200V/10A/QFET
MOSFET N-CH/200V/10A/QFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH