FQD10N20CTM ON Semiconductor
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details FQD10N20CTM ON Semiconductor
Description: MOSFET N-CH 200V 7.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote FQD10N20CTM nach Preis ab 2.07 EUR bis 2.07 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis | ||||
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| FQD10N20CTM | Hersteller : ON-Semicoductor |
 Transistor N-Channel MOSFET; 200V; 30V; 360mOhm; 7,8A; 50W; -55°C ~ 150°C; OBSOLETE; FQD10N20CTM-VB; TPM2007NK3; FQD10N20CTM-JSM; FQD10N20CTM Fairchild TFQD10n20ctmAnzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FQD10N20CTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 7.8A 3-Pin(2+Tab) DPAK T/R |
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| FQD10N20CTM | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 7.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FQD10N20CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FQD10N20CTM | Hersteller : onsemi |
Description: MOSFET N-CH 200V 7.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar |
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FQD10N20CTM | Hersteller : onsemi / Fairchild |
MOSFET N-CH/200V/10A/QFET |
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FQD10N20CTM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |